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CN-121992350-A - Semiconductor of magnetron sputtering color coating and preparation method

CN121992350ACN 121992350 ACN121992350 ACN 121992350ACN-121992350-A

Abstract

The invention belongs to the technical field of semiconductor surface films and physical vapor deposition, and relates to a semiconductor of a magnetron sputtering color coating and a preparation method thereof. According to the invention, argon and nitrogen are introduced into the vacuum cavity, an iron target is adopted for magnetron sputtering to form a color film, the surface of the crystal is made to show orange, golden yellow, pale yellow and other transparent colors by adjusting the air pressure, the power and the flow ratio, and a SiO 2 protective film is deposited on the outer layer of the crystal by adopting a silicon target through magnetron sputtering, so that the compactness, the adhesive force, the wear resistance and the corrosion resistance of the film are improved. Compared with the traditional electroplating or dyeing method, the process flow is simple and convenient, the color of the composite film is flexible, the color of the obtained composite film is bright, stable and durable, the composite film is pure and transparent in vision, is not easy to fade or damage, and is suitable for the application of semiconductor crystal decoration and optical functional films.

Inventors

  • ZHANG LEI
  • LIN XINSONG
  • WANG SHOUZHI
  • LI QIUBO
  • Yu Jiaoxian
  • WANG GUODONG
  • XU QINGJUN

Assignees

  • 山东大学

Dates

Publication Date
20260508
Application Date
20251231

Claims (10)

  1. 1. A method for preparing a semiconductor with a magnetron sputtering color coating, which is characterized by comprising the following steps: (1) Carrying out ultrasonic cleaning and blow-drying on the semiconductor crystal substrate; (2) Placing the substrate into a vacuum cavity, pumping to high vacuum and heating; (3) The method comprises the steps of introducing working gas and reaction gas into a vacuum cavity to ionize the working gas into plasma, wherein the working gas is argon, the reaction gas is oxygen, nitrogen or mixed gas, the flow ratio of the working gas to the mixed gas is 1-20:1, the working gas pressure is 0.5-3.0 Pa, the sputtering power is 20-200W, the working temperature is 25-300 ℃, and the sputtering time is 1-300min; (4) And (3) sputtering a silicon target on the surface of the iron-nitrogen compound color film by adopting magnetron sputtering, controlling the flow ratio of argon to nitrogen to be 3:2, controlling the working air pressure to be 1.0-1.5 Pa, sputtering power to be 80-100W, sputtering time to be 1-300min, and depositing a SiO 2 transparent protective film to obtain the semiconductor with the color coating.
  2. 2. The method of claim 1, wherein the semiconductor crystal substrate in step (1) is at least one of silicon carbide, silicon, gallium oxide, gallium nitride, aluminum nitride, or diamond.
  3. 3. The method according to claim 1, wherein the heating temperature in the step (2) is 25 to 300 ℃.
  4. 4. The preparation method of the glass fiber reinforced plastic film according to claim 1, wherein the target material is pre-sputtered for 20-30 minutes before the gas is introduced in the step (3), and the substrate rotates at a constant speed in the sputter deposition process of the step (3) and the step (4).
  5. 5. The method according to claim 1, wherein the color functional film in the step (3) is orange, golden yellow or pale yellow.
  6. 6. The method according to claim 5, wherein the flow ratio of argon to nitrogen is 8-20:1, the working air pressure is 0.5-2.0 Pa, and the sputtering power is 80-100W when the color of the color functional film in the step (3) is orange.
  7. 7. The method according to claim 5, wherein the flow ratio of argon to nitrogen is 5-10:1, the working air pressure is 1.0-2.0 Pa, and the sputtering power is 80-100W when the color of the colored film in the step (3) is golden yellow.
  8. 8. The method according to claim 1, wherein the flow ratio of argon to nitrogen is 4-8:1, the working air pressure is 1.5-3.0 Pa, and the sputtering power is 80-100W when the color of the color film in the step (3) is light yellow.
  9. 9. Use of the preparation method according to any one of claims 1 to 8 for surface coloring of semiconductor crystal substrates such as silicon carbide, silicon, gallium oxide, gallium nitride, aluminum nitride or diamond and for the preparation of optical functional films.
  10. 10. A semiconductor with a coloured coating obtained by the method of any one of claims 1 to 8.

Description

Semiconductor of magnetron sputtering color coating and preparation method Technical Field The invention belongs to the technical field of semiconductor surface films and physical vapor deposition, and particularly relates to a semiconductor with a magnetron sputtering color coating and a preparation method thereof. Background The silicon carbide crystal has high hardness and high refractive index, and has high application value in photoelectric devices, functional coatings and decorative applications. But its natural colorless transparent appearance limits the variety of surface colors that require specific color and functional effects to be achieved by surface deposition of the coating. The traditional electroplating or organic coating method can impart color, but has the defects of single color, poor adhesive force, easy aging and fading and the like. In recent years, vacuum coating technology has been widely used in the fields of semiconductors and optics for preparing dense, uniform and color-controllable functional films. The traditional vacuum evaporation technology forms a film by evaporating materials and obtains colors by utilizing interference colors, and is commonly used for optical and decorative coating films, but the film has poor density and low adhesive force. The thin film prepared by the high vacuum molecular beam epitaxy technology has high uniformity and good adhesive force, but has low deposition rate, high cost and is not suitable for large-scale preparation. The magnetron sputtering technology is widely used by virtue of low cost, high deposition rate, high uniformity, and applicability to complex targets, reactive sputtering, and co-sputtering. Because the silicon carbide substrate is a brittle semiconductor material, how to optimize sputtering parameters and reasonably select target materials and a multilayer film structure so as to obtain a semiconductor crystal surface coating with controllable color, strong adhesive force, stability and durability is a technical problem to be solved in the invention. Disclosure of Invention In order to solve the defects in the prior art, the invention provides a semiconductor of a magnetron sputtering color coating and a preparation method thereof. The invention adopts magnetron sputtering to deposit a color film on a semiconductor crystal, and realizes the color conversion of orange, golden yellow, pale yellow and the like by precisely controlling the film components and the thickness. The resulting coating exhibits a clear and clean visual effect, unlike the specular appearance of conventional metallic coatings. The technical scheme of the invention is as follows: a preparation method of a semiconductor with a magnetron sputtering color coating comprises the following steps: (1) Carrying out ultrasonic cleaning and blow-drying on the semiconductor crystal substrate; (2) Placing the substrate into a vacuum cavity, pumping to high vacuum and heating; (3) The method comprises the steps of introducing working gas and reaction gas into a vacuum cavity to ionize the working gas into plasma, wherein the working gas is argon, the reaction gas is oxygen, nitrogen or mixed gas, the flow ratio of the working gas to the reaction gas is 1-20:1, the working gas pressure is 0.5-3.0 Pa, the sputtering power is 20-200W, the working temperature is 25-300 ℃, and the sputtering time is 1-300min; (4) And (3) sputtering a silicon target on the surface of the color film by adopting magnetron sputtering, controlling the flow ratio of argon to nitrogen to be 3:2, controlling the working air pressure to be 1.0-1.5 Pa, and depositing a SiO 2 transparent protective film with the sputtering power of 80-100W and the sputtering time of 1-300min so as to obtain the semiconductor with the color coating. Preferably, the semiconductor crystal substrate in the step (1) is one or more of silicon carbide, silicon, gallium oxide, gallium nitride, aluminum nitride or diamond. Preferably, the heating temperature in step (2) is 25-300 ℃. Preferably, the target is pre-sputtered before the gas is introduced in the step (3) to remove surface impurities, and the pre-sputtering time is 20-30 minutes. Preferably, the color functional film in the step (3) is orange, golden yellow or pale yellow in color. Further preferably, when the color of the color film in the step (3) is orange, the flow ratio of argon to nitrogen is 8-20:1, the working air pressure is 0.5-2.0 Pa, and the sputtering power is 80-100W. Further preferably, when the color of the colored film in the step (3) is golden, the flow ratio of argon to nitrogen is 5-10:1, the working air pressure is 1.0-2.0 Pa, and the sputtering power is 80-100W. Further preferably, when the color of the color film in the step (3) is light yellow, the flow ratio of argon to nitrogen is 4-8:1, the working air pressure is 1.5-3.0 Pa, and the sputtering power is 80-100W. Preferably, in the sputter deposition process of step (3) and step (4), the subst