CN-121992359-A - Multicomponent film evaporation film thickness monitoring and adjusting device, method and application

CN121992359ACN 121992359 ACN121992359 ACN 121992359ACN-121992359-A

Abstract

The invention provides a multi-component film evaporation thickness monitoring and adjusting device, a method and application, wherein the multi-component film evaporation thickness monitoring and adjusting device comprises a conveying module, a first film thickness monitoring module, a second film thickness monitoring module and a control module, wherein the conveying module is used for conveying a substrate to deposit a film layer on a moving substrate through a first evaporation source and a second evaporation source, a position sensing module is arranged to generate a trigger signal when the substrate enters a set area, the first film thickness monitoring module is used for acquiring the deposition speed of the first evaporation source and the film layer thickness deposited on the substrate, the second film thickness monitoring module is used for acquiring the reflection spectrum of the second evaporation source in the set area, and the control module is used for acquiring the film layer thickness of the second evaporation source through an inversion algorithm according to the reflection spectrum of the second evaporation source and independently controlling real-time evaporation working conditions in a feedback mode. The invention carries out differential parallel monitoring on the thicknesses of materials with different evaporation rates to form a closed loop feedback system, thereby improving the film thickness monitoring accuracy and ensuring the long-time operation of the monitoring work.

Inventors

WEI XIAOTAO
LIU XIAOYU
XU GENBAO

Assignees

浙江晟霖益嘉科技有限公司

Dates

Publication Date: 20260508
Application Date: 20260212

Claims (10)

1. The multi-component film evaporation thickness monitoring and adjusting device is characterized by comprising a transportation module, a first film thickness monitoring module, a second film thickness monitoring module and a control module; The transport module is used for transporting the substrate to deposit a film layer on the moving substrate through a first vapor deposition source and a second vapor deposition source, the evaporation rate of the first vapor deposition source is smaller than that of the second vapor deposition source, and the transport module is further provided with a position sensing module which generates a trigger signal when the substrate enters a set area; The first film thickness monitoring module is used for acquiring the deposition speed of the first evaporation source and the thickness of a film deposited on the substrate, and the second film thickness monitoring module is arranged below the substrate transmission path and used for acquiring the reflection spectrum of the second evaporation source in the set area; The control module is respectively connected with the transportation module, the first film thickness monitoring module, the second film thickness monitoring module, the position sensing module, the first evaporation source and the second evaporation source, and is used for receiving the deposition rate and the film thickness of the first evaporation source, obtaining the film thickness of the first evaporation source through an inversion algorithm according to the reflection spectrum of the second evaporation source, and independently feeding back and controlling the evaporation working conditions of the first evaporation source and the second evaporation source.
2. The multi-component thin film evaporation thickness monitoring and adjusting device according to claim 1, wherein the first film thickness monitoring module comprises at least one QCM sensor device, the QCM sensor device is parallel to the substrate, the QCM sensor device is further electrically connected to the control module, and is configured to obtain a deposition rate of the first evaporation source and a thickness of a film deposited on the substrate, and upload the deposition rate and the thickness of the film to the control module, and the control module receives and analyzes the deposition rate and the thickness of the film, and feedback-controls a real-time evaporation condition of the first evaporation source.
3. The multi-component thin film evaporation film thickness monitoring and adjusting device according to claim 1, wherein the second film thickness monitoring module comprises a spectrum detection device and a shutter type shutter which are electrically connected; The spectrum detection device and the shutter are independently and electrically connected with the control module; The control module receives a trigger signal generated by the position sensing module, controls the shutter to switch by combining the transmission speed of the substrate so as to open or close the spectrum detection device, the spectrum detection device acquires a reflection spectrum and then uploads the reflection spectrum to the control module, and the control module calculates the thickness of a film layer deposited on the substrate by the second evaporation source through an inversion algorithm based on the reflection spectrum so as to feedback control the real-time evaporation working condition of the second evaporation source.
4. The multi-component thin film evaporation film thickness monitoring and adjusting device according to claim 3, wherein a distance between the spectrum detection device and the substrate is 3-10 cm; the response time of the shutter is <10ms.
5. The multi-component thin film evaporation film thickness monitoring and adjusting device according to claim 1, wherein the control module comprises a data receiving end, a data analyzing end and an executing end; The data receiving end is respectively and electrically connected with the transportation module, the position sensing module, the first film thickness monitoring module and the second film thickness monitoring module, the data receiving end is configured to respectively receive the transmission speed of the substrate, the trigger signal generated by the position sensing module, the deposition rate and the film thickness acquired by the first film thickness monitoring module and the reflection spectrum data acquired by the second film thickness monitoring module; The data analysis end is respectively and electrically connected with the data receiving end and the execution end, and is configured to analyze whether the deposition rate and the film thickness of the first evaporation source deviate from target thresholds, calculate a predicted value of the second evaporation source through an inversion algorithm, analyze whether the predicted value deviates from a standard value and output an analysis result; The execution end is further electrically connected with the data receiving end, the second film thickness monitoring module, the first evaporation source and the second evaporation source respectively, and is configured to perform time sequence control on the second film thickness monitoring unit and adjust real-time evaporation working conditions of the first evaporation source and the second evaporation source.
6. The multi-component thin film evaporation thickness monitoring and adjusting device according to claim 5, wherein the data analysis end comprises a database, a modeling component and an analysis terminal, the modeling component is electrically connected with the database and the analysis terminal respectively, and the analysis terminal is electrically connected with the data receiving end and the execution end; The database is configured to pre-store a data set of reflection spectra of a film layer formed by a second evaporation source with a known thickness; The modeling component is configured to construct and train a machine-learned hybrid model based on a physical enhanced reflectance spectrum and film thickness mapping relationship from a dataset; The analysis terminal is configured to analyze and process the data information of the data receiving end, call the machine learning hybrid model in the modeling component to interact with the data information, and output an analysis result to the execution end.
7. A method for monitoring and adjusting the thickness of a multi-component film by vapor deposition, which is characterized in that the device for monitoring and adjusting the thickness of the multi-component film by vapor deposition according to any one of claims 1 to 6 comprises: a substrate is transported, and a film layer is deposited on the moving substrate through a first evaporation source and a second evaporation source; the method comprises the steps of obtaining the deposition speed of a first evaporation source and the thickness of a film deposited on a substrate through a first film thickness monitoring module, and uploading the deposition speed and the thickness of the film to a control module; the control module receives the deposition rate and the film thickness of the first vapor deposition source, analyzes whether the deposition rate and the film thickness of the first vapor deposition source deviate from target thresholds, and feedback controls the real-time vapor deposition working condition of the first vapor deposition source according to analysis results; When the substrate enters a set area, the position sensing module generates a trigger signal and uploads the trigger signal to the control module, the control module receives the signal and controls the second film thickness monitoring module to acquire a reflection spectrum of the second evaporation source in the set area, and the second film thickness monitoring module uploads the reflection spectrum to the control module; The control module receives the reflection spectrum, obtains the thickness of a film layer deposited on the substrate by the second evaporation source through an inversion algorithm, and feedback controls the real-time evaporation working condition of the second evaporation source according to the thickness of the film layer.
8. The method for monitoring and adjusting the thickness of a multi-component thin film deposited by a deposition source according to claim 7, wherein the method for obtaining the thickness of the film deposited on the substrate by the second deposition source by using an inversion algorithm comprises: Generating a mapping relation between a reflection spectrum and a film thickness based on a transmission matrix method, performing noise robustness fitting and nonlinear correction through an improved gradient lifting decision tree regression algorithm, and constructing a machine learning hybrid model; And inputting a real-time reflection spectrum, interacting with the machine learning mixed model, and outputting a calculation result of the film thickness of the second evaporation source.
9. The method for monitoring and adjusting the thickness of a multi-component thin film according to claim 8, wherein the evaporation conditions include at least one of a working power, a deposition rate and a deposition time.
10. The use of a multi-component film deposition film thickness monitoring and adjusting device according to any one of claims 1 to 6, wherein the multi-component film deposition film thickness monitoring and adjusting device is applied to deposition of perovskite inorganic salt layers.

Description

Multicomponent film evaporation film thickness monitoring and adjusting device, method and application Technical Field The invention belongs to the technical field of film coating, relates to the field of film thickness monitoring, and particularly relates to a device, a method and application for monitoring and adjusting the film thickness of multi-component film evaporation. Background In the industrial production of perovskite solar cells, the precise deposition of inorganic salt layers is a key element in determining the photoelectric performance of devices. In the prior art, a thermal evaporation method is adopted to carry out film deposition, a quartz crystal microbalance (QCM, quartz Crystal Microbalance) is used for carrying out real-time monitoring on the evaporation process, and the film thickness control is realized by tracking the deposition rate. However, there is a significant difference in the evaporation characteristics of different inorganic salts in perovskite material systems, such as vapor deposition materials with low component ratios, which require a lower evaporation rate to be maintained, so that the QCM can operate stably for more than 300 hours. The main components need to keep high evaporation rate, so that thick and heavy sediments are rapidly accumulated on the surface of the QCM, the frequency response capability is lost after 6-12 hours, frequent cavity opening maintenance is needed, and the production continuity and the equipment productivity are seriously affected. In addition, frequent replacement or cleaning of QCM not only reduces the throughput of the equipment, but may introduce contamination risks, affecting film quality and device consistency. The prior art lacks a non-contact on-line detection scheme aiming at high evaporation rate materials, and is difficult to meet the requirements of an automatic production line on continuity and stability. The existing monitoring system is not suitable for a non-contact film thickness real-time detection method under the working conditions of high temperature and high deposition rate, and the film thickness detection result is lagged, so that the evaporation process parameters cannot be fed back and adjusted in real time. Therefore, development of a film thickness monitoring technology that adapts to different evaporation characteristics is an urgent need in the industry. Disclosure of Invention Aiming at the defects of the prior art, the invention aims to provide a multi-component film evaporation thickness monitoring and adjusting device, a method and application, which realize differential collaborative monitoring and control of materials with different evaporation rates, predict the film thickness through an inversion algorithm to form a closed loop feedback system, and improve the thickness prediction precision and the process disturbance resistance. To achieve the purpose, the invention adopts the following technical scheme: The invention provides a multi-component film evaporation thickness monitoring and adjusting device, which comprises a transportation module, a first film thickness monitoring module, a second film thickness monitoring module and a control module, wherein the transportation module is used for transporting a substrate to deposit a film layer on the moving substrate through a first evaporation source and a second evaporation source, the evaporation rate of the first evaporation source is smaller than that of the second evaporation source, the transportation module is further provided with a position sensing module, the position sensing module generates a trigger signal when the substrate enters a set area, the first film thickness monitoring module is used for acquiring the deposition rate of the first evaporation source and the film thickness deposited on the substrate, the second film thickness monitoring module is arranged below a substrate transport path and used for acquiring the reflection spectrum of the second evaporation source in the set area, and the control module is respectively connected with the transportation module, the first film thickness monitoring module, the second film thickness monitoring module, the position sensing module, the first evaporation source and the second evaporation source and is used for receiving the first evaporation source and the second evaporation source and receiving the film thickness of the first evaporation source and the film thickness of the second evaporation source, and simultaneously acquiring the film thickness of the film by inverting the film thickness of the first evaporation source and the second evaporation source and the film thickness of the second evaporation source according to a feedback film thickness algorithm. The invention integrates multi-module film thickness detection fusion and intelligent feedback control, performs differential monitoring and unified control on the film thickness deposited on the substrate by the high-evaporation-rat