CN-121992364-A - Atomic layer deposition equipment and method for patterning and manufacturing two-dimensional film

CN121992364ACN 121992364 ACN121992364 ACN 121992364ACN-121992364-A

Abstract

The invention relates to the field of semiconductor micro-nano manufacturing processes, in particular to atomic layer deposition equipment and method for patterning and manufacturing a two-dimensional film. The preparation method comprises the steps of replacing a bearing platform in a deposition cavity with a multi-station rotary disc, arranging a plurality of double-layer stations along the circumferential direction of the disc, wherein an upper layer is used for fixing a patterning mask and a lower layer is used for fixing a deposition substrate, driving the disc to rotate in a stepping manner by an external control system, enabling the stations to sequentially enter a central deposition reaction zone, and matching with alternate pulses of a precursor source to realize flexible definition of atomic deposition two-dimensional material film deposition and preset patterns on the surface of the substrate. The structure supports the design of various patterning masks and multi-substrate continuous treatment, and the flexibility and the process efficiency of the preparation of the patterning film are obviously improved.

Inventors

LIU LEI
ZHANG HONGCHENG
CHEN YUNFEI
WANG DEYI

Assignees

东南大学
西班牙马德里高等材料研究院高性能纳米材料研究中心

Dates

Publication Date: 20260508
Application Date: 20260203

Claims (9)

1. The atomic layer deposition equipment for patterning and manufacturing the two-dimensional film is characterized by comprising a deposition cavity, a precursor source system, an air path system and a multi-station rotating disc; The deposition cavity is provided with a heating device, can controllably heat the interior of the cavity, and provides a uniform and stable reaction environment for patterning deposition of the two-dimensional film; The precursor source system is used for storing precursors required by atomic layer deposition and conveying the precursors to the deposition cavity in the deposition process through the gas path system; The gas path system is precisely regulated and controlled by a valve and a flowmeter, and is used for conveying a precursor source and inert gas to the deposition cavity in the deposition process and discharging reaction tail gas from the cavity; The multi-station rotating disc is arranged in the deposition cavity and used for fixing the mask plate and the deposition substrate, and each station sequentially enters the deposition area through rotation to realize sequential deposition of the patterned film.
2. The atomic layer deposition apparatus for two-dimensional thin film patterned fabrication of claim 1, further comprising an external control system, circuitry: the external control system is used for controlling the valve of the gas path system, the switch of the flowmeter and the stepping rotation of the multi-station rotating disc, and also comprises a heating program of the deposition cavity; The circuitry is configured to power the atomic layer deposition device.
3. The atomic layer deposition equipment for patterning two-dimensional thin film according to claim 1, wherein the precursor source system comprises two precursor source bottles, the precursor source bottles are made of 316 stainless steel or 316L stainless steel, and each precursor source bottle is provided with an independent heating protection sleeve.
4. The atomic layer deposition equipment manufactured by two-dimensional film patterning according to claim 1, wherein the deposition cavity consists of a sample deposition chamber and a transition cabin, the sample deposition chamber is made of 316L stainless steel, the working temperature is set within the range of 50-800 ℃, and the transition cabin of the deposition cavity is also made of 316L stainless steel and is connected with the sample deposition chamber.
5. The atomic layer deposition device manufactured by patterning a two-dimensional thin film according to claim 1, wherein the multi-station rotating disc is controlled in a stepping manner through the external control system, each station is provided with a mechanical clamping structure of an independent mask plate and a substrate, and the mask plate is made of monocrystalline silicon, quartz or high-temperature-resistant stainless steel.
6. The atomic layer deposition device for patterning a two-dimensional thin film according to claim 1, wherein the gas path system is connected to a vacuum pump for performing a vacuum pumping operation on the deposition chamber and exhausting reaction tail gas generated in the deposition process.
7. An atomic layer deposition method for two-dimensional thin film patterning manufacture based on the atomic layer deposition device according to any one of claims 1 to 6, wherein the atomic layer deposition device comprises a deposition cavity, a precursor source system, a gas path system, an external control system, a circuit system and a multi-station rotating disc, and comprises the following steps: loading and fixing the mask and the deposition substrate on corresponding stations of the multi-station rotary disc respectively; the vacuum pump connected with the gas circuit system is used for vacuumizing the deposition cavity to achieve the required low vacuum degree; Introducing inert gas higher than atmospheric pressure into the deposition cavity through the gas path system, cleaning the inert gas atmosphere, and discharging residual gas; the power supply structure supplies power to the multi-source supply system and the multi-source same-cavity deposition cavity to start the heating function of the multi-source supply system and the multi-source same-cavity deposition cavity, and the multi-source same-cavity deposition cavity is heated and insulated; the heating device of the deposition cavity and the precursor source system are powered through the circuit system, a heating function is started, the deposition cavity is heated to a preset deposition temperature, and the deposition cavity is kept stable; The valve and the flowmeter of the gas circuit system are controlled by the external control system, the precursor is conveyed to the deposition cavity in a pulse mode, atomic layer deposition is carried out on the surface of the substrate, and the excessive precursor and reaction byproducts are purged by inert gas; the multi-station rotating disc is controlled to rotate in a stepping mode through the external control system, stations are switched, the steps are repeated, and sequential deposition of the patterned films is sequentially achieved on substrates of the stations; and after the in-situ annealing is finished, maintaining an inert gas atmosphere to cool the deposition cavity, stopping air supply and heating after cooling to a safe temperature, recovering normal pressure, and taking out a sample.
8. The atomic layer deposition method according to claim 7, wherein the deposition substrate is a silicon oxide wafer, a silicon wafer, aluminum oxide, or a copper sheet.
9. The atomic layer deposition method for patterning two-dimensional thin films according to claim 7, wherein the vacuum pump vacuumizes the deposition cavity and the gas path system to 0-200 Pa, the heating temperature of the precursor source system is 25-150 ℃, the heating temperature of the deposition cavity is 50-600 ℃, and the in-situ annealing process temperature of the deposition cavity is 500-700 ℃.

Description

Atomic layer deposition equipment and method for patterning and manufacturing two-dimensional film Technical Field The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to atomic layer deposition equipment and method for two-dimensional film patterning manufacturing. Background The two-dimensional film has important potential in the fields of next-generation high-performance electronic devices, photoelectric devices, sensing and the like due to the atomic-level thickness and unique physicochemical properties. The realization of patterning deposition of the film is a precondition for constructing a functional micro-nano device, and the precision and the efficiency directly determine the performance and the integration level of the device. The atomic layer deposition (Atomic Layer Deposition, ALD) technology, which is a vapor deposition method based on self-limiting surface reaction, has the advantages of atomic-level thickness control, excellent uniformity, high conformality and the like, and is an ideal technology for preparing high-quality two-dimensional films. However, the core function of conventional ALD apparatus is to achieve deposition of large-area uniform thin films, which do not have patterning capability per se. The main approach for implementing ALD patterning in the prior art generally relies on two ways, namely, using a prefabricated patterned hard mask to cover the substrate, removing the mask after the deposition is completed, which is complicated in steps and difficult in mask alignment, cleaning and reuse, and performing global deposition, defining the pattern by subsequent photolithography and etching processes, thereby increasing the complexity of the process and increasing the risk of introducing contamination. The preparation of the patterned structure is difficult to directly realize, and the requirement of multi-substrate and high-efficiency batch production cannot be met. Disclosure of Invention In order to solve the problems, the invention discloses atomic layer deposition equipment and a method for patterning and manufacturing a two-dimensional film, wherein the equipment comprises a deposition cavity, a precursor source system, an air path system and a multi-station rotating disc arranged in the deposition cavity, wherein the precursor source system is used for providing a precursor, and the patterning and deposition and in-situ annealing processes of the film are sequentially completed in the deposition cavity provided with a heating device. In order to achieve the above purpose, the technical scheme of the invention is as follows: An atomic layer deposition apparatus for two-dimensional thin film patterning, comprising: The deposition cavity is provided with a heating device, can controllably heat the interior of the cavity and provides a uniform and stable reaction environment for patterning deposition of the two-dimensional film; the precursor source system is used for storing precursors required by atomic layer deposition; The gas path system is precisely regulated and controlled through a valve and a flowmeter, and is used for conveying a precursor source and inert gas to the deposition cavity in the deposition process and discharging reaction tail gas from the cavity; The multi-station rotating disc is arranged in the deposition cavity and used for fixing the mask plate and the deposition substrate, and each station sequentially enters the deposition area through rotation to realize sequential deposition of the patterned film. Further, the system also comprises an external control system and a circuit system: The external control system is used for controlling the switch of a valve and a flowmeter of the gas circuit system, the stepping rotation of the multi-station rotating disc and the heating program of the deposition cavity; The circuitry is to power the atomic layer deposition device. Further, the precursor source system comprises two precursor source bottles, wherein the precursor source bottles are made of 316 stainless steel or 316L stainless steel, and each precursor source bottle is provided with an independent heating protection sleeve. Further, the deposition cavity consists of a sample deposition chamber and a transition cabin. Further, the sample deposition chamber is made of 316L stainless steel. Further, the heating temperature of the deposition cavity can be set within a range of 50-800 ℃. Further, the transition cabin is made of 316L stainless steel and is connected with the sample deposition chamber. Further, the multi-station rotating disc is controlled in a stepping mode through the external control system. Further, each station of the multi-station rotary disc is provided with a mask and a substrate independent mechanical clamping structure. Further, the mask plate is made of monocrystalline silicon, quartz or high-temperature-resistant stainless steel. Further, the gas path system is connected with a v