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CN-121992368-A - Silicon carbide nanowire-diamond interpenetrating composite film and preparation method thereof

CN121992368ACN 121992368 ACN121992368 ACN 121992368ACN-121992368-A

Abstract

The invention belongs to the technical field of diamond materials, and particularly relates to a silicon carbide nanowire-diamond interpenetrating composite film and a preparation method thereof. The preparation method comprises the steps of sequentially depositing a carbon film and a nickel film on the surface of a silicon substrate, annealing the carbon film and the nickel film, growing silicon carbide nanowires on the silicon substrate in situ, then placing the obtained silicon substrate with the grown silicon carbide nanowires in a nano diamond suspension for ultrasonic treatment to enable the surface of the silicon carbide nanowires to adsorb nano diamond particles, and then utilizing microwave plasma chemical vapor deposition diamond to enable the diamond to be filled in pores of a framework of a silicon carbide nanowire network to form a three-dimensional network structure with the silicon carbide nanowires and the diamond penetrating each other. The silicon carbide nanowire-diamond interpenetrating composite film prepared by the invention has excellent heat conduction performance and good toughness while keeping high hardness.

Inventors

  • BAI JIE
  • LIU HENGCHANG
  • WANG QIANG

Assignees

  • 重庆交通大学

Dates

Publication Date
20260508
Application Date
20260302

Claims (8)

  1. 1. The preparation method of the silicon carbide nanowire-diamond interpenetrating composite film is characterized by comprising the following steps of: (1) Sequentially depositing a carbon film and a nickel film on the surface of a silicon substrate, and carrying out annealing treatment to grow silicon carbide nanowires on the silicon substrate in situ; (2) Placing the silicon substrate with the silicon carbide nanowires grown in the step (1) into a nano-diamond suspension for ultrasonic treatment, so that the surfaces of the silicon carbide nanowires adsorb nano-diamond particles; (3) Placing the sample treated in the step (2) into plasma chemical vapor deposition equipment, introducing hydrogen and a carbon source, and depositing diamond under the conditions of 3000-5000W microwave power, 900-1000 ℃ and 1-2 kPa pressure in a cavity, so that the diamond is filled in pores of a silicon carbide nanowire network framework, and a three-dimensional network structure formed by the mutual penetration of the silicon carbide nanowire and the diamond is formed.
  2. 2. The method for preparing a silicon carbide nanowire-diamond interpenetrating composite film according to claim 1, wherein in the step (1), a magnetron sputtering process is adopted for depositing the carbon film and the nickel film, wherein the sputtering current is 150-180 mA, the time is 10-20 min, and the sputtering current is 170-200 mA and the time is 10-20 min when the nickel film is deposited.
  3. 3. The method for producing a silicon carbide nanowire-diamond interpenetrating composite film according to claim 1, wherein the annealing treatment in step (1) is performed at a temperature of 1000 to 1100 ℃ for a time of 50 to 60 min.
  4. 4. The method for preparing a silicon carbide nanowire-diamond interpenetrating composite film according to claim 1, wherein the concentration of the nano-diamond suspension in the step (2) is 1-5 g/L, the particle size of the nano-diamond is 5-10 nm, and the power of the ultrasonic treatment is 40-50W for 5-6 min.
  5. 5. The method of producing a silicon carbide nanowire-diamond interpenetrating composite film according to claim 1, wherein the time for depositing diamond in step (3) is 40 to 50 min.
  6. 6. The method for producing a silicon carbide nanowire-diamond interpenetrating composite film according to claim 1, wherein the carbon source in the step (3) is any one of methane, acetone, and graphite.
  7. 7. The method for producing a silicon carbide nanowire-diamond interpenetrating composite film according to claim 1, wherein the molar ratio of the carbon source to hydrogen in the step (3) is 1% -8%.
  8. 8. A silicon carbide nanowire-diamond interpenetrating composite film, which is characterized by being prepared by adopting the method of any one of claims 1-7, and comprising a silicon carbide nanowire network framework and a continuous diamond phase filled in pores of the framework, wherein the silicon carbide nanowire and the diamond mutually penetrate to form a three-dimensional interpenetrating network structure.

Description

Silicon carbide nanowire-diamond interpenetrating composite film and preparation method thereof Technical Field The invention belongs to the technical field of diamond materials, and particularly relates to a silicon carbide nanowire-diamond interpenetrating composite film and a preparation method thereof. Background The monocrystalline diamond is used as a material with highest hardness and highest heat conductivity in the nature, and is widely applied to the fields of ultra-precision machining cutters and efficient heat sinks, and the silicon carbide film is commonly used as a wear-resistant coating or a semiconductor substrate by virtue of good heat conductivity and chemical stability. To improve the oxidation resistance of diamond tools and the wettability of the solder, deposition of silicon carbide films on diamond surfaces has been studied. However, most of the films are compact plane structures, have limited binding force with diamond matrixes, are high in brittleness, are easy to crack and expand under complex stress, cause structural failure, and are difficult to realize high toughness and high heat conductivity. On the other hand, the combination of metal or ceramic matrix (such as aluminum and resin) and silicon carbide is a common idea for improving the mechanical property and the heat conducting property of the silicon carbide, but the matrix material has lower heat conductivity and hardness, and can improve part of toughness or wear resistance, but is difficult to meet the requirements of extreme heat dissipation and high wear resistance. Meanwhile, the silicon carbide reinforcing phase is often randomly distributed in the matrix, so that the performance is anisotropic, the interface bonding strength is not easy to regulate and control, and the application of the silicon carbide reinforcing phase in the field of heat dissipation materials is further limited. In recent years, silicon carbide nanowires and diamond nanocoating have been valued for their outstanding mechanical, thermal and field emission properties, and the combination of the two is considered to be a viable way to achieve high performance composite structures. However, silicon carbide nanowires are usually grown on inexpensive substrates such as silicon and are difficult to be directly used for high-performance system integration, and diamond nano-coating on non-diamond substrates has the problems of low nucleation density and poor adhesion. The prior researches mostly adopt a simple stacked composite structure, and the used substrate has low heat conductivity and mismatch with the thermal expansion of materials, so that the interface thermal resistance is large, the overall heat management performance is limited, and the interface stripping or the overall failure is easy to occur in the heat cycle. In summary, the prior art is often focused on single performance optimization, and it is difficult to cooperatively achieve multiple objectives of high hardness and toughness, high thermal conductivity, high interface stability, and the like. Therefore, the invention provides an innovative structural design, which aims to realize good combination of the silicon carbide nanowire and the diamond nano coating, strengthen interface combination and toughness improvement, and achieve the aim of remarkably improving the thermal management efficiency and long-term service stability of the composite structure, thereby overcoming the common layering problem in the combination of the two, and finally obtaining the composite material with high heat conduction and good toughness. Disclosure of Invention The first aim of the invention is to provide a preparation method of a silicon carbide nanowire-diamond interpenetrating composite film. The second object of the present invention is to provide a silicon carbide nanowire-diamond interpenetrating composite film obtained by the above preparation method, which has excellent heat conduction performance and good toughness while maintaining high hardness. In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: The preparation method of the composite film of the silicon carbide nanowire-diamond interpenetrating composite film comprises the following steps: (1) Sequentially depositing a carbon film and a nickel film on the surface of a silicon substrate, and carrying out annealing treatment to grow silicon carbide nanowires on the silicon substrate in situ; (2) Placing the silicon substrate with the silicon carbide nanowires grown in the step (1) into a nano-diamond suspension for ultrasonic treatment, so that the surfaces of the silicon carbide nanowires adsorb nano-diamond particles; (3) Placing the sample treated in the step (2) into plasma chemical vapor deposition equipment, introducing hydrogen and a carbon source, and depositing diamond under the conditions of 3000-5000W microwave power, 900 ℃ temperature and 1-2 kPa pressure in the cavity, so that the di