CN-121992374-A - Furnace tube for wafer film growth

CN121992374ACN 121992374 ACN121992374 ACN 121992374ACN-121992374-A

Abstract

The invention provides a furnace tube for wafer film growth, which comprises a furnace body, a wafer boat, a first pipeline and a uniform flow mechanism, wherein the furnace body is provided with a reaction chamber, the wafer boat is arranged in the reaction chamber and used for bearing wafers, the first pipeline is provided with a first gas discharge section, the first gas discharge section is positioned in the reaction chamber and extends along the axial direction of the wafer boat and used for discharging reaction gases towards the wafer boat, the uniform flow mechanism comprises a second pipeline, the second pipeline is provided with a second gas discharge section, the second gas discharge section is positioned in the reaction chamber and extends along the axial direction of the wafer boat, and the second gas discharge section and the first gas discharge section are arranged at intervals and used for discharging dilution gases or reaction gases towards the wafer boat. According to the furnace tube for wafer film growth, the distribution of the reaction gas in the furnace tube can be adjusted through the cooperation of the first pipeline and the second pipeline, so that the uniformity of wafer film growth is improved, and the yield of subsequent products is ensured.

Inventors

YANG XIAOYAN
LIN XIAOHAN

Assignees

芯恩（青岛）集成电路有限公司

Dates

Publication Date: 20260508
Application Date: 20241107

Claims (10)

1. A furnace tube for wafer film growth, comprising: The furnace body is provided with a reaction chamber; The wafer boat is arranged in the reaction chamber and used for bearing wafers; a first pipe having a first gas discharge section located in the reaction chamber and extending in an axial direction of the wafer boat for discharging a reaction gas toward the wafer boat; The uniform flow mechanism comprises a second pipeline, wherein the second pipeline is provided with a second gas discharge section, the second gas discharge section is positioned in the reaction cavity and extends along the axial direction of the wafer boat, and the second gas discharge section is arranged at intervals with the first gas discharge section and is used for discharging dilution gas or reaction gas towards the wafer boat.
2. The furnace tube for wafer film growth according to claim 1, wherein the first gas discharge section is provided with a plurality of equally spaced first gas discharge holes, the first gas discharge holes are oriented to the wafer boat for discharging a dilution gas or a reaction gas toward the wafer boat; A plurality of equidistant second exhaust holes are formed in the second gas exhaust section, and the second exhaust holes face the wafer boat and are used for exhausting diluent gas or reaction gas toward the wafer boat; wherein each first vent hole is provided with a corresponding second vent hole with the same height.
3. The furnace tube for wafer film growth of claim 1, wherein the flow homogenizing mechanism further comprises a controller, a control valve, and a plurality of the second pipes; the second pipeline is further provided with a second gas transmission section which is communicated with the second gas discharge section, one end of the second gas transmission section extends out of the reaction chamber, and a plurality of second gas discharge sections are arranged at intervals around the wafer boat; The control valve is positioned outside the reaction chamber and arranged on the second gas transmission section and used for controlling the switch of the second gas transmission section; the controller is electrically connected with the control valve and is used for controlling the control valve to open or close the corresponding second gas transmission section.
4. The furnace tube for wafer film growth of claim 3, wherein the flow uniformity mechanism further comprises a plurality of detectors electrically connected to the controller; The inner wall of the reaction chamber is axially divided into a plurality of detection areas along the inner wall, and each detection area is internally provided with a detector; The detectors are used for detecting actual reaction gas concentration values in the corresponding detection areas and feeding back the actual reaction gas concentration values to the controller; the controller is provided with a reaction gas concentration range, and controls the control valve to be opened and closed according to the received actual reaction gas concentration value so that the actual reaction gas concentration value is within the reaction gas concentration range.
5. The furnace tube for wafer film growth according to claim 3 or 4, wherein the flow homogenizing mechanism further comprises a flow controller disposed outside the reaction chamber, the flow controller being electrically connected to the controller; and each second gas transmission section is provided with a flow controller, and the flow controllers are used for controlling the flow of the reaction gas transmitted in the second gas transmission sections.
6. The furnace tube for wafer film growth of claim 4, wherein the flow uniformity mechanism further comprises a circumferential flow uniformity assembly; The surrounding uniform flow component is movably arranged in the reaction chamber and surrounds the wafer boat, and the surrounding uniform flow component can move along the axial direction of the wafer boat; When the detector detects that the actual concentration value of the reaction gas in the corresponding detection area exceeds or is lower than the concentration range of the reaction gas, the surrounding uniform flow component moves to the corresponding height position of the detection area for uniform flow of the reaction gas.
7. The furnace tube for wafer film growth of claim 6, wherein the circumferential flow homogenizing element comprises a first flow homogenizing element and at least one first lifting mechanism; The first lifting mechanism is electrically connected with the controller and is provided with a first lifting part which can move in a telescopic way along the axial direction of the wafer boat; The first uniform flow piece is connected with at least one first lifting part, the first uniform flow piece is annular and sleeved on the wafer boat, an annular first uniform flow piece is arranged on the outer side wall of the first uniform flow piece, and the bottom of the first uniform flow piece is inclined towards the inner side of the reaction chamber.
8. The furnace tube for wafer film growth of claim 7, wherein the circumferential flow homogenizing element further comprises a second flow homogenizing element and at least one second lifting mechanism; the second lifting mechanism is electrically connected with the controller and is provided with a second lifting part which can move in a telescopic way along the axial direction of the wafer boat; The second uniform flow piece is connected with at least one second lifting part, the second uniform flow piece is annular and sleeved on the wafer boat, an annular second uniform flow piece is arranged on the outer side wall of the second uniform flow piece, and the bottom of the second uniform flow piece is inclined towards the outer part of the reaction chamber.
9. The furnace tube for wafer film growth of claim 8, further comprising a base and a divider plate; The base is rotatably arranged at the bottom of the reaction chamber; The separation plate is arranged on the base, and the edge of the separation plate is close to the inner side wall of the reaction chamber; the wafer boat is arranged on the separation plate, and is respectively positioned at two sides of the separation plate with the first lifting mechanism and the second lifting mechanism.
10. The furnace tube for wafer film growth according to claim 9, wherein the partition plate is provided with a first through hole and a second through hole; the first lifting mechanism and the second lifting mechanism are both arranged on the partition plate, the first lifting part is connected with the first uniform flow piece through the first through hole, and the second lifting part is connected with the second uniform flow piece through the second through hole.

Description

Furnace tube for wafer film growth Technical Field The invention relates to the technical field of semiconductor processing equipment, in particular to a furnace tube for wafer film growth. Background Atomic layer deposition (Atomic Layer Deposition, ALD), a process that allows for the layer-by-layer deposition of substances onto a substrate surface in the form of a monoatomic film, with good compatibility of ALD reactions, which are widely used in advanced process nodes. Specifically, the ALD process reaction can be performed in a furnace tube, and the film can be grown in the furnace tube for several tens or even hundreds of products at a time, so that the cost is low. However, considering the characteristics of performing the process by using a furnace tube, the simultaneous operation of a plurality of wafers, the uniformity between wafers (Wafer to wafer uniformity, WTW U%) is generally required to be considered in the growth of the thin film in the furnace tube. In the existing furnace tube, the reaction gas generally enters from the bottom of the furnace tube and is conveyed into the whole furnace tube from bottom to top so as to perform film deposition growth on the wafer. When the reaction gas is introduced from the bottom, the reaction gas is continuously consumed at the bottom of the furnace tube, so that the amount of the reaction gas at the top of the furnace tube is smaller than that of the reaction gas at the bottom, and thus, the shape and thickness of the film deposited on the wafer surface in the furnace tube are different, particularly, the thickness of the film deposited on the wafer surface close to the bottom of the furnace tube is thicker, the thickness of the film formed on the wafer surface close to the top of the furnace tube is thinner, and the distribution of the different shapes brings great challenges to the subsequent process, and even affects the yield of the final product when serious. Disclosure of Invention The invention aims to provide a furnace tube for wafer film growth, which can adjust the distribution of reaction gas in the furnace tube, improve the uniformity of wafer film growth and ensure the yield of subsequent products. In order to achieve the above object, in a first aspect, the present invention provides a furnace tube for wafer film growth, comprising: The furnace body is provided with a reaction chamber; The wafer boat is arranged in the reaction chamber and used for bearing wafers; a first pipe having a first gas discharge section located in the reaction chamber and extending in an axial direction of the wafer boat for discharging a reaction gas toward the wafer boat; The uniform flow mechanism comprises a second pipeline, wherein the second pipeline is provided with a second gas discharge section, the second gas discharge section is positioned in the reaction cavity and extends along the axial direction of the wafer boat, and the second gas discharge section is arranged at intervals with the first gas discharge section and is used for discharging dilution gas or reaction gas towards the wafer boat. The furnace tube for wafer film growth has the beneficial effects that the first pipeline and the uniform flow mechanism are arranged in the furnace body, the first pipeline is used for discharging the reaction gas, the second pipeline of the uniform flow mechanism can also be used for discharging the reaction gas, and the distribution of the reaction gas in the furnace body is regulated through the cooperation of the first pipeline and the second pipeline, so that the reaction gas is uniformly distributed in the reaction chamber, the uniformity of wafer film growth is improved, and the yield of subsequent products is ensured. In some embodiments, the first gas exhaust section is provided with a plurality of equally spaced first exhaust holes, and the first exhaust holes face the wafer boat and are used for exhausting dilution gas or reaction gas toward the wafer boat; A plurality of equidistant second exhaust holes are formed in the second gas exhaust section, and the second exhaust holes face the wafer boat and are used for exhausting diluent gas or reaction gas toward the wafer boat; Wherein each first vent hole is provided with a corresponding second vent hole with the same height. The wafer boat has the beneficial effects that the first gas discharge section is provided with a plurality of equidistant first exhaust holes, and each first exhaust hole faces the wafer boat. The second gas discharge section is arranged at intervals with the first gas discharge section, a plurality of equidistant second exhaust holes are formed in the second gas discharge section, each second exhaust hole is provided with a first exhaust hole with a corresponding height, the first exhaust holes and the second exhaust holes are simultaneously used for discharging reaction gas towards the wafers on the wafer boat, and the occurrence of uneven distribution of the reaction gas in the