CN-121992377-A - Diamond film growth heat dissipation substrate for high-power microwave plasma equipment and application thereof

Abstract

The invention discloses a diamond film growth heat dissipation substrate for high-power microwave plasma equipment and application thereof. The top surface of the diamond film growth heat dissipation substrate is provided with one or more sample holes for placing samples, and the diamond film growth heat dissipation substrate has the advantages of good heat dissipation performance, strong deformation resistance and the like, and solves the problems of uneven temperature field and the like in the microwave plasma dispersion adsorption process.

Inventors

• YANG GUOYONG
• SONG HUI
• WANG YUEZHONG
• YI JIAN
• CHU WUBO
• YUAN QILONG
• LI HE
• JIANG NAN

Assignees

• 中国科学院宁波材料技术与工程研究所

Dates

Publication Date

20260508

Application Date

20260114

Claims (18)

1. 1. The diamond film growth heat dissipation substrate for the high-power microwave plasma equipment is characterized in that one or more sample holes for placing samples are formed in the top surface of the diamond film growth heat dissipation substrate.
2. 2. The diamond film growth heatsink substrate of claim 1, wherein the diamond film growth heatsink substrate has sample holes of one or more dimensions formed in a top surface thereof.
3. 3. The diamond film-grown heatsink substrate according to claim 1 or 2, wherein the sample hole has a pore diameter of 2 inches or more.
4. 4. The diamond film growth heatsink substrate of claim 1, wherein the diamond film growth heatsink substrate is cylindrical.
5. 5. The diamond film growth heatsink substrate of claim 4, wherein the diamond film growth heatsink substrate has a diameter of 100-400 mm a.
6. 6. The diamond film growth heatsink substrate of claim 1,4 or 5, wherein the diamond film growth heatsink substrate has a thickness of 2-20 mm a.
7. 7. The diamond film growth heat sink substrate according to claim 1 or 4, wherein the top surface of the diamond film growth heat sink substrate is a smooth surface, and edges of the smooth surface are chamfered.
8. 8. The diamond film growth heatsink substrate of claim 1, wherein a top surface of the sample is not higher than a top surface of the diamond film growth heatsink substrate when the sample is placed in the sample well.
9. 9. The diamond film growth heat dissipation substrate according to claim 1, wherein the top surface of the diamond film growth heat dissipation substrate is provided with more than two sample holes, and the closest distance between the edges of two adjacent sample holes is not less than 3 mm.
10. 10. The diamond film growth heatsink substrate of claim 1, wherein the top surface of the diamond film growth heatsink substrate is provided with five or more of the sample holes.
11. 11. The diamond film growth heat sink substrate according to claim 1, 9 or 10, wherein five 4-inch sample holes and one 2-inch sample hole are formed in the top surface of the diamond film growth heat sink substrate, wherein the diameter of the 4-inch sample hole is 101.6-109.6 mm, the diameter of the 2-inch sample hole is 50.8-58.8 mm, and the five 4-inch sample holes are uniformly distributed around the periphery of the 2-inch sample hole.
12. 12. The diamond film growth heat sink substrate according to claim 1, 9 or 10, wherein six 3 inch sample holes and one 2 inch or 4 inch sample hole are formed in the top surface of the diamond film growth heat sink substrate, wherein the aperture of the 3 inch sample hole is 76.2-84.2 mm, the aperture of the 2 inch sample hole is 50.8-58.8 mm, the aperture of the 4 inch sample hole is 101.6-109.6 mm, and the six 3 inch sample holes are uniformly distributed on the periphery of the 2 inch or 4 inch sample hole.
13. 13. The diamond film growth heat dissipation substrate according to claim 1, 9 or 10, wherein 15 2 inch sample holes are formed in the top surface of the diamond film growth heat dissipation substrate, the aperture of the 2 inch sample holes is 50.8-58.8 mm, the 15 2 inch sample holes are distributed in two layers, the inner layer is 52 inch sample holes uniformly distributed on the same circumference, and the outer layer is 102 inch sample holes uniformly distributed around the inner layer.
14. 14. The diamond film growth heat dissipation substrate according to claim 1, wherein the material of the diamond film growth heat dissipation substrate comprises one or more of silicon, quartz, copper, and molybdenum; the room temperature heat conductivity coefficient of the diamond film growth heat dissipation substrate is more than or equal to 130W/(m.K), and the thermal expansion coefficient at 800-1200 ℃ is less than or equal to 5.5X10. 10 -6 /°C.
15. 15. Use of a diamond film growth heatsink substrate according to any one of claims 1-14 for sample high power microwave plasma growth of diamond films.
16. 16. The use according to claim 15, wherein the diamond film growth heat-dissipating substrate is subjected to a pretreatment annealing operation prior to use in sample high-power microwave plasma growth of diamond film, the pretreatment annealing operation comprising introducing hydrogen and oxygen and etching at a plasma power of 30-50KW and a gas pressure of 10-20 KPa.
17. 17. The use according to claim 16, wherein in the pretreatment annealing operation: the volume ratio of the hydrogen to the oxygen is 300-500:1; The etching time is 10-20 hours.
18. 18. A high power microwave plasma device comprising a diamond film grown heat sink substrate according to any one of claims 1 to 14.

Description

Diamond film growth heat dissipation substrate for high-power microwave plasma equipment and application thereof Technical Field The invention relates to the field of high-power microwave plasma equipment, in particular to a diamond film growth heat dissipation substrate for high-power microwave plasma equipment and application thereof. Background The diamond film has extremely high hardness, excellent heat conductivity, good chemical stability and excellent electrical property, has wide application prospect in various fields such as electronics, optics, machinery and the like, and along with the development of technology, large-area and large-size diamond films grow by adopting high-power microwave plasma equipment (such as 915MHz-75KW grade and the like), and strict requirements are set for a radiating substrate in the growth process. For example, patent specification CN113481595A discloses an M-shaped coaxial antenna 915MHz microwave plasma chemical vapor deposition device, which is mainly used for preparing monocrystalline diamond and polycrystalline diamond films, and can realize single plasma high-efficiency deposition under high power, high or low cavity pressure. As another example, patent specification publication No. CN120844062a discloses a 915 MHz Microwave Plasma Chemical Vapor Deposition (MPCVD) apparatus for 16 inch diamond wafer deposition. In the prior art, the diamond film growth substrate for the microwave plasma equipment has the problems that on one hand, the heat dissipation performance of the substrate is poor, so that heat is easy to concentrate in the growth process, the temperature field is unevenly distributed, the matching stability of the plasma density and an electric field is affected, and the growth quality and the yield of a diamond film are further reduced, on the other hand, the conventional substrate is easy to deform in a high-power high-temperature environment, the placement stability of a sample is affected, the sample is possibly damaged due to thermal stress generated by deformation, and meanwhile, the dispersion adsorption effect of microwave plasma is also affected, so that the preparation of the large-area and large-size high-quality diamond film is further restricted. Therefore, a diamond film growth heat dissipation substrate that can be used for a high-power microwave plasma device such as 75KW has been proposed to solve the above-mentioned problems. Disclosure of Invention The invention provides a diamond film growth heat dissipation substrate for high-power microwave plasma equipment and application thereof, which have the advantages of good heat dissipation performance, strong deformation resistance and the like, and solve the problems of uneven temperature field and the like in the microwave plasma stable matching discharge high-density high-quality large-size growth dispersion adsorption process. The specific technical scheme is as follows: In a first aspect, the present invention provides a diamond film growth heat dissipation substrate for a high-power microwave plasma device, wherein one or more sample holes for placing samples are formed in the top surface of the diamond film growth heat dissipation substrate. Further, in the present invention, the high-power microwave plasma apparatus refers to a microwave plasma apparatus having a power of not less than 10KW, for example, 915MHz-75 KW-level high-power microwave plasma apparatus, and the like. In some preferred examples, the top surface of the diamond film growth heat dissipation substrate is provided with sample holes of one or more than two sizes. In some preferred embodiments, the sample aperture has a pore size of greater than 2 inches. The diamond film growth heat dissipation substrate is particularly suitable for growing diamond films on large-size (for example, more than 2 inches) samples, and the quality of the grown diamond films is very good. In some preferred embodiments, the diamond film-grown heatsink substrate is cylindrical. Further preferably, the diameter of the diamond film growth heat dissipation substrate is 100-400 mm, such as 290 mm, 300 mm, 310 mm, 350 mm, etc., and the size is reasonable, so that the diamond film growth heat dissipation substrate can adapt to equipment requirements. In some preferred embodiments, the thickness of the diamond film growth heat dissipation substrate is 2-20 mm, such as 5mm, 10 mm, 15 mm, etc., and the size is reasonable and can adapt to the equipment requirements. In some preferred embodiments, the top surface of the diamond film-grown heat-dissipating substrate is a smooth surface, and the edges of the smooth surface are chamfered. The chamfering treatment of the edge of the light face effectively avoids discharge phenomenon in the experiment and ensures the smooth performance of the experiment. Further preferably, the chamfering treatment is a transition arc with an angle of 45 degrees and a radius of 1-5 mm. In some preferred embodiments, when