CN-121992378-A - Method and system for selectively depositing dielectric material on metal surface

Abstract

A method of selectively depositing a dielectric material on a metal surface relative to a non-metal surface is disclosed. An exemplary method includes selectively forming a desired terminal functional group on a non-metallic surface using a first reactant, and selectively reacting a second reactant with the terminal functional group to selectively form an organic layer on the non-metallic surface.

Inventors

• A. Viana
• K.K. Cascher
• A. McClaude
• L. Rodrigues
• K. P. Martinez

Assignees

• ASMIP私人控股有限公司

Dates

Publication Date

20260508

Application Date

20251031

Priority Date

20241104

Claims (20)

1. 1. A method of selectively depositing a dielectric material on a metal surface relative to a non-metal surface, the method comprising: providing a substrate within a reaction chamber of a reactor; Providing a first reactant to the reaction chamber, wherein the first reactant selectively reacts with the non-metallic surface relative to the metallic surface to form-OSiH functional groups on the non-metallic surface, and The provision of a second reactant, which is a reactant, Wherein the second reactant reacts selectively with the-OSiH functional groups relative to the metal surface to selectively form an organic layer on the non-metal surface relative to the metal surface.
2. 2. The method of claim 1, wherein the first reactant comprises an aminosilane.
3. 3. The method of claim 2, wherein the aminosilane comprises silicon hydrogen bonded to at least one nitrogen and at least one hydrogen bond.
4. 4. The method of claim 1, wherein the metallic surface comprises a metallic material.
5. 5. The method of claim 1, wherein the metal surface consists essentially of one or more of a metal or a metal alloy.
6. 6. The method of claim 1, wherein the second reactant comprises an alkene or alkyne terminal functional group.
7. 7. The method of claim 1, wherein the second reactant comprises a C2-C18, C2-C10, or C2-C8 linear or branched or cyclic hydrocarbon or fluoro-substituted derivative thereof.
8. 8. The method of claim 1, wherein the second reactant is represented by formula C x H y F z , wherein x is an integer between about 2 and about 24, y is an integer between 0 and about 36, and z is an integer between 0 and about 36.
9. 9. The method of claim 1, wherein the second reactant comprises one or more of a thiol or a disulfide.
10. 10. The process of claim 9, wherein the thiol is represented by the formula R-SH, wherein R is a C1-C18 linear or branched or cyclic hydrocarbon or fluoro-substituted derivative thereof.
11. 11. The method of claim 9, wherein the disulfide is represented by the formula R '-S-R ", wherein each R' and R" is independently a C1-C18 linear or branched or cyclic hydrocarbon or fluoro-substituted derivative thereof.
12. 12. The method of claim 1, wherein the second reactant comprises one or more of an alcohol or an aldehyde.
13. 13. The method of claim 12, wherein the aldehyde is represented by the formula: , And wherein R is a C1-C18 straight or branched or cyclic hydrocarbon.
14. 14. The method of claim 12, wherein the aldehyde is represented by formula C n H 2n+1 OH, wherein n is between 1 and 18.
15. 15. The method of claim 1, wherein the dielectric material is a metal oxide, nitride or carbide or a metalloid oxide, nitride or carbide.
16. 16. The method of claim 1, further comprising selectively depositing the dielectric material on the metal surface.
17. 17. The method of claim 16, further comprising removing the organic layer after selectively depositing the dielectric material on the metal surface.
18. 18. A method of selectively depositing a dielectric material on a metal surface relative to a non-metal surface, the method comprising: providing a substrate within a reaction chamber of a reactor; Providing a first reactant to the reaction chamber, wherein the first reactant selectively reacts with the non-metallic surface relative to the metallic surface to form-OSiH functional groups on the non-metallic surface, and A second reactant is provided to the reaction chamber, Wherein the first reactant comprises an aminosilane, Wherein the second reactant comprises one or more of (1) a C2-C18 alkene or alkyne or fluoro-substituted derivative thereof, (2) an organosulfur compound, (3) an alcohol, or (4) an aldehyde, and Wherein the second reactant reacts selectively with the-OSiH functional groups relative to the metal surface to selectively form an organic layer on the non-metal surface relative to the metal surface.
19. 19. The method of claim 18, further comprising selectively depositing the dielectric material on the metal surface.
20. 20. A reactor system, comprising: A controller configured to perform the method of claim 1; a source vessel containing a first reactant and coupled to the reaction chamber; a source vessel containing a second reactant and coupled to the reaction chamber; reactor, and And a vacuum source.

Description

Method and system for selectively depositing dielectric material on metal surface Technical Field The present disclosure relates generally to methods for depositing material on a substrate. More particularly, the present disclosure relates to selectively depositing a dielectric material on a metal surface using a selectively formed passivation film. Background Dielectric material films or layers are used in a wide variety of applications. For example, films of dielectric materials may be used to form insulating regions, diffusion barriers, surface passivation, and to form various device features, such as gate structures, capacitors, and the like. To form regions or features comprising dielectric material, dielectric material is typically deposited onto the surface of the substrate. The deposited film is then patterned using, for example, photolithography, and then etched to remove some of the dielectric material to form the desired features or regions including the remaining dielectric material. As the size of device features continues to decrease, it becomes increasingly difficult to pattern and etch films of dielectric material to form features or regions of patterned dielectric material of desired dimensions, particularly when it is desired to deposit dielectric material within vias or trenches on the substrate surface. In addition, the photolithography and etching steps can increase the costs associated with device fabrication and increase the amount of time required for device fabrication. Accordingly, improved methods for selectively forming dielectric materials on metal surfaces are desired. Disclosure of Invention This section introduces some concepts in a simplified form that may be described in further detail below. This summary is not intended to necessarily identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Various embodiments of the present disclosure provide methods and reactor systems for selectively depositing dielectric materials on metal surfaces relative to non-metal surfaces. As set forth in more detail below, selective deposition may be achieved by selectively forming a barrier layer or passivation layer on a non-metallic surface relative to a metallic surface. The barrier or passivation layer may prevent or mitigate unwanted deposition of dielectric material on non-metallic surfaces. According to various embodiments of the present disclosure, a method of depositing a dielectric material on a metal surface relative to a non-metal surface includes providing a substrate within a reaction chamber of a reactor, providing a first reactant to the reaction chamber, and providing a second reactant to the reaction chamber. According to examples of the present disclosure, a first reactant selectively reacts with a non-metallic surface relative to the metallic surface to form-OSiH functional groups on the non-metallic surface, and a second reactant selectively reacts with-OSiH functional groups relative to the metallic surface to selectively form an organic layer on the non-metallic surface relative to the metallic surface. The organic layer may serve as a passivation or barrier layer for subsequent deposition of the dielectric material onto the metal surface. According to a further example, the first reactant is or includes an aminosilane. In some cases, the second reactant can include alkene and/or alkyne terminal functional groups. In certain instances, the second reactant is represented by formula C xHyFz, where x is an integer between about 2 and about 24 or between about 2 and about 18 or between about 2 and about 12, y is an integer between about 0 and about 36 or between about 1 and about 24 or between about 1 and about 12, and z is 0 or an integer between about 0 and about 36 or between about 1 and about 24 or between about 1 and about 12. In some cases, the second reactant is or includes a thiol. In some cases, the second reactant is or includes a disulfide. In some cases, the second reactant is or includes an alcohol. In some cases, the second reactant is or includes an aldehyde. In some cases, the second reactant comprises one or more of (1) a C2-C18 alkene or alkyne, or fluoro-substituted derivative thereof, (2) a sulfur compound, (3) an alcohol, or (4) an aldehyde. The method may further comprise the step of selectively depositing a dielectric material on the metal surface. The method may further include removing the organic layer after selectively depositing the dielectric material on the metal surface. According to further embodiments, a reactor system includes a controller, a source vessel containing a first reactant and coupled to a reaction chamber, a source vessel containing a second reactant and coupled to the reaction chamber, a reactor, and a vacuum source. The controller may be configured to perform or cause the reactor system to perform the methods as described herein. T