CN-121992380-A - Variable pressure dosing method and system

Abstract

Methods of depositing material and systems for depositing material are disclosed. An exemplary method includes dosing a precursor and/or reactant to a substrate while varying a pressure within a reaction chamber.

Inventors

• C. R. Rutherford
• Zhang Shuaidi
• J. Bucky
• P.Ma

Assignees

• ASMIP私人控股有限公司

Dates

Publication Date

20260508

Application Date

20251104

Priority Date

20241107

Claims (20)

1. 1. A method of depositing material in a gap on a surface of a substrate, the method comprising: providing a substrate within a reaction chamber of a reactor; Reducing the pressure within the reaction chamber to a first pressure (P1) using a vacuum source; Increasing the pressure in the reaction chamber from P1 towards a second pressure (P2), and While increasing the pressure toward P2, the precursor is pulsed into the reaction chamber during the precursor pulse period.
2. 2. The method of claim 1, wherein after the precursor pulse period, the pressure within the reaction chamber continues to increase.
3. 3. The method of claim 1, wherein the pressure within the reaction chamber increases continuously over a pressurization period.
4. 4. The method of claim 3, wherein the duration of the pressurization period is between about 1 second and about 10 seconds or between about 1 second and about 5 seconds.
5. 5. The method of claim 1, wherein P2 is greater than or equal to five times P1.
6. 6. The method of claim 1, wherein the precursor pulse period has a duration of between about 0.2 seconds and about 10 seconds or between about 0.3 seconds and about 2 seconds.
7. 7. The method of claim 1, wherein P1 is between about 0.01 torr and 20 torr or between about 0.5 torr and 10 torr.
8. 8. The method of claim 1, wherein P2 is between about 60 torr and 100 torr or between about 70 torr and 90 torr.
9. 9. The method of claim 1, wherein P1 is less than 20 torr and P2 is greater than 60 torr.
10. 10. The method of claim 1, wherein the step of increasing begins before the step of pulsing the precursor into the reaction chamber.
11. 11. The method according to claim 1, further comprising the step of reducing the pressure in the reaction chamber to a third pressure (P3) after the step of increasing the pressure in the reaction chamber.
12. 12. The method of claim 11, further comprising the step of increasing the pressure within the reaction chamber to P4 after the step of reducing the pressure within the reaction chamber to P3.
13. 13. The method of claim 1, wherein the method is a thermal cycling deposition process.
14. 14. The method of claim 1, comprising conformally depositing the material within the gap.
15. 15. The method of claim 14, comprising filling the gap with the material.
16. 16. A method of conformally depositing a material in a gap on a surface of a substrate, the method comprising: providing a substrate within a reaction chamber of a reactor; reducing the pressure in the reaction chamber to a first pressure (P1); Increasing the pressure in the reaction chamber from P1 towards a second pressure (P2), and While increasing the pressure toward P2, the precursor is pulsed into the reaction chamber during the precursor pulse period.
17. 17. The method of claim 16, wherein the pressure within the reaction chamber increases continuously over a pressurization period.
18. 18. The method of claim 16, wherein the material comprises a metal.
19. 19. The method of claim 16, wherein the material comprises a dielectric material.
20. 20. A reactor system, comprising: A controller configured to perform the method of claim 16, and The reactor.

Description

Variable pressure dosing method and system Technical Field The present disclosure relates generally to methods and apparatus for gas phase processes. More particularly, the present disclosure relates to a vapor phase method of depositing material within a gap on a substrate surface and a reactor system for performing such a method. Background Vapor phase processes such as Chemical Vapor Deposition (CVD), plasma Enhanced CVD (PECVD), atomic Layer Deposition (ALD), and the like are commonly used to deposit materials onto a substrate surface, etch materials from a substrate surface, and/or clean or treat a substrate surface. For example, vapor phase processes may be used to deposit layers of materials on substrates to form semiconductor devices, flat panel display devices, photovoltaic devices, microelectromechanical systems (MEMS), and the like. In some cases, it may be desirable to fill the gaps (e.g., vias or trenches) on the substrate surface with a material such as a conductive or dielectric material. As the dimensions of device features generally continue to decrease, it becomes increasingly difficult to fill the gaps with materials having desirable material properties and desirable fill characteristics (e.g., little or no gaps and/or void formation). This is especially true when attempting to fill gaps using conformal deposition techniques for high stack memory structures-especially as the number of layers, number of holes, and/or aspect ratio of features (such as gaps) increases. Techniques to improve filling of gaps on the substrate surface include increasing the amount of precursor and/or reactant provided during the deposition process and operating the deposition process at relatively high pressures. While such techniques may be useful for some applications, such techniques may increase operating costs and/or have limited ability to fill gaps with materials having desirable properties. Accordingly, improved methods and reactor systems for depositing material within a gap on a substrate surface are desired. Any discussion of problems and solutions in this section is merely for purposes of providing a background for the disclosure and should not be construed as an admission that any or all of the discussions are known in the art to which the present invention pertains. Disclosure of Invention This section introduces some concepts in a simplified form that may be described in further detail below. This summary is not intended to necessarily identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Various embodiments of the present disclosure provide methods and reactor systems for depositing materials on a substrate surface. As set forth in more detail below, the exemplary methods and reactor systems are particularly suited for processes that deposit material within (e.g., conformally) a gap on a substrate surface. According to various embodiments of the present disclosure, a method of depositing material in a gap on a surface of a substrate includes providing a substrate within a reaction chamber of a reactor, reducing a pressure within the reaction chamber to a first pressure (P1) using a vacuum source, increasing the pressure within the reaction chamber from P1 toward a second pressure (P2), and pulsing a precursor into the reaction chamber for a precursor pulsing period while increasing the pressure toward P2. According to various examples, the pressure within the reaction chamber continues to increase after the precursor pulse period. According to a further example, the pressure within the reaction chamber is continuously increased during the pressurization period. The pressurization period may be, for example, between about 1 second and about 10 seconds or between about 1 second and about 5 seconds. In at least some cases, the step of increasing begins before the step of pulsing the precursor into the reaction chamber. The method may further include reducing the pressure within the reaction chamber to P3, and increasing the pressure within the reaction chamber to P4 after the step of reducing the pressure within the reaction chamber to P3. The method may be or include a thermal cycling deposition process. The material may be or include a metallic or dielectric material. According to further embodiments, a reactor system includes one or more reaction chambers, a precursor gas source, a reactant gas source, a vacuum source, and a controller. The controller may be configured to cause the reactor system to perform the methods as described herein. The foregoing summary and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure or claimed invention. Drawings Exemplary embodiments of the present disclosure may be more fully understood by reference to the detailed description and the claims when considered in connection with the following illustrative