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CN-121992404-A - PVD composite coating cooker and preparation method thereof

CN121992404ACN 121992404 ACN121992404 ACN 121992404ACN-121992404-A

Abstract

The application discloses a PVD composite coating cooker and a preparation method thereof, comprising the steps of carrying out surface cleaning and activating treatment on a metal cooker substrate, placing the cooker into PVD coating equipment for vacuumizing, configuring a titanium target, a multi-element composite target and an oxide target, adopting ion bombardment to clean the cooker surface, depositing a titanium transition layer with the thickness of 0.1-0.5 mu m, depositing a copper-aluminum-silicon-chromium carbide composite functional layer with the thickness of 4.5-5.5 mu m, depositing an oxide surface layer with the thickness of 0.2-0.8 mu m, and cooling along with a furnace after coating is completed. By adopting a three-layer gradient structure design, the titanium transition layer and the matrix form metallurgical bonding, the copper aluminum silicon chromium carbide composite functional layer provides hydrophobic and oleophilic properties, and the oxide surface layer blocks oxygen and nitrogen diffusion, so that the comprehensive properties of strong film bonding force, high temperature resistance and lasting non-sticking are realized.

Inventors

  • YU CHENGYOU

Assignees

  • 余成有

Dates

Publication Date
20260508
Application Date
20260401

Claims (10)

  1. 1. The preparation method of the PVD composite coating cooker is characterized by comprising the following steps of: s1, carrying out surface cleaning and activating treatment on a metal cooker substrate, wherein the metal cooker substrate is a metal substrate which is not subjected to plasma spraying chromium layer treatment; S2, placing the cleaned cooker into PVD coating equipment, vacuumizing until the vacuum degree is less than or equal to 5 multiplied by 10 - Pa, wherein the PVD coating equipment is provided with 2 pure titanium targets, 6 copper aluminum silicon chromium carbide quaternary composite carbide targets and 2 oxide targets, and only argon is introduced as working gas in the whole process; S3, starting a bias power supply to-800V to-1200V, adopting a pulse mode with a duty ratio of 20% and starting a multi-arc power supply to generate argon ions and metal ions to bombard the surface of the cooker for plasma cleaning, reducing the bias voltage to-400V to-500V after cleaning, regulating the duty ratio to 40% -50%, continuously working the multi-arc power supply to bombard a pure titanium target, depositing a pure titanium transition layer on the surface of a substrate, depositing a chromium-free metal layer and a chromium nitride-free layer, performing nitrogen-free treatment on the titanium transition layer, wherein the thickness of the titanium transition layer is 0.1-0.5 mu m; s4, closing the multi-arc bias, starting an intermediate frequency power supply to bombard a copper aluminum silicon chromium carbide quaternary composite carbide target, and depositing a copper aluminum silicon chromium carbide composite functional layer on the titanium transition layer, wherein the composite functional layer is a pure carbide system, and the thickness of the composite functional layer is 4.5-5.5 mu m; S5, starting a radio frequency power supply or a pulse direct current power supply to bombard an oxide target, and depositing an oxide surface layer on the surface of the composite functional layer, wherein the thickness of the oxide surface layer is 0.2-0.8 mu m; S6, cooling to room temperature along with the furnace after coating is completed.
  2. 2. The method for preparing the cooker according to claim 1, wherein in the step S3, argon is introduced to have the purity of 99.999%, plasma cleaning is carried out on the surface of the cooker by adopting multi-arc high bias, the cleaning parameters are that the bias is-800 to-1200V, the argon flow is 50-100sccm, the working air pressure is 0.5-1.0Pa, the cleaning time is 10-20min, and no cathode arc and sputtering technology are compositely deposited in the cleaning process.
  3. 3. The method for preparing the cooker according to claim 1, wherein in the step S3, the deposition parameters of the titanium transition layer are bias voltage of-400 to-500V, multi-arc current of 60-100A, argon flow of 20-50sccm, working air pressure of 0.3-0.8Pa, deposition temperature of 200-300 ℃, and the deposition process is pure multi-arc deposition without sputtering process participation.
  4. 4. The method for preparing the cooker according to claim 1, wherein the copper aluminum silicon chromium carbide quaternary composite carbide target is prepared by powder metallurgy sintering, in the step S4, the intermediate frequency power supply frequency is 20-40kHz, the power density is 5-10W/cm < 2 >, the argon flow is 30-60 sccm, the working air pressure is 0.4-0.9Pa, the deposition temperature is 250-350 ℃, the deposition process is pure intermediate frequency sputtering, and no cathode arc process participates.
  5. 5. The method for preparing a cooker according to claim 1, wherein in step S5, the oxide target is a silicon dioxide target, the radio frequency power supply frequency is 13.56 MHz, the power is 500-1500W, the argon flow is 10-30 sccm, the working air pressure is 0.2-0.6 Pa, the deposition temperature is 200-280 ℃, the deposition process is pure radio frequency/pulse direct current sputtering, and no cathodic arc or multiple arc process participates.
  6. 6. The method for preparing a cooker according to claim 1, wherein in the step S1, the surface cleaning and activating treatment is a three-stage cleaning process comprising ultrasonic alkaline cleaning, acid cleaning and activating, deionized water rinsing and drying.
  7. 7. A PVD composite coated cooker prepared by the preparation method of any one of claims 1 to 6, comprising: The metal cooker substrate is a metal substrate which is not subjected to plasma spraying of a chromium layer and chromium-free base paint treatment; The pure titanium transition layer is deposited on the surface of the metal cooker substrate, forms metallurgical bonding with the substrate, has no chromium/chromium nitride priming layer and no cathode arc and sputtering composite substrate structure, and has the thickness of 0.1-0.5 mu m; The copper-aluminum-silicon-chromium carbide composite functional layer is deposited on the titanium transition layer, is a pure carbide system, is free from nitrogen element doping, and consists of 0.5-5% of copper, 3-20% of aluminum, 10-25% of silicon and 45-75% of chromium carbide according to the weight ratio, and the thickness of the composite functional layer is 4.5-5.5 mu m; the oxide surface layer is deposited on the surface of the composite functional layer, is a silicon dioxide compact barrier layer, has no diamond or diamond-like coating, and has the thickness of 0.2-0.8 mu m.
  8. 8. The PVD composite coated cooker according to claim 7, wherein the total thickness of the titanium transition layer, the copper aluminum silicon chromium carbide composite functional layer and the oxide surface layer is 3-6.8 μm.
  9. 9. The PVD composite coated cooker according to claim 7, wherein the copper-aluminum-silicon-chromium carbide composite functional layer is composed of 1% -3% of copper, 5% -15% of aluminum, 15% -20% of silicon and 50% -70% of chromium carbide in parts by weight.
  10. 10. The PVD composite coated cooker according to claim 9, wherein the total thickness of the titanium transition layer, the copper aluminum silicon chromium carbide composite functional layer and the oxide surface layer is 5-6 μm, and the high temperature resistance reaches 500 ℃ dry firing for 30 minutes without discoloration and falling off.

Description

PVD composite coating cooker and preparation method thereof Technical Field The invention relates to the technical field of cooker surface treatment, in particular to a Physical Vapor Deposition (PVD) composite coating technology, and more particularly relates to a cooker for preparing a nitrogen-free carbide and oxide three-layer gradient composite coating by adopting a multi-power-supply synergistic process and a preparation method thereof. Background The cooker is a basic tool for daily cooking and is widely applied to the fields of home kitchens, catering industry and the like. With the improvement of the requirements of people on healthy diet and cooking convenience, the cooker surface treatment technology becomes a key factor influencing the product performance, and the ideal cooker surface has the comprehensive properties of non-sticking, easy cleaning, high temperature resistance, abrasion resistance and the like so as to meet the modern cooking requirements. The traditional non-stick coating of the cooker is mainly made of Polytetrafluoroethylene (PTFE) or silicon-containing ceramic coating, and an organic coating is formed on the surface of the cooker in a spray coating or dip coating mode. The PTFE coating has good non-stick performance, but has the problem of lower upper temperature limit, the application temperature is usually not more than 260 ℃, the softening and decomposition of the coating are easy to occur under cooking scenes such as high-temperature dry burning or quick-frying, the non-stick performance is reduced and even the coating is invalid, in addition, the PTFE coating and a metal matrix are mainly combined by physical adsorption, the bonding strength is limited, the problems of coating peeling, foaming and the like are easy to occur in the long-term use process, and the service life and the food safety are influenced. In order to overcome the limitation of organic coating, physical Vapor Deposition (PVD) technology is gradually applied to the surface treatment of cookers, and various PVD ceramic coating cookers have been disclosed in the prior art, wherein US6197438B1 discloses a tableware coating technology using a chromium/chromium nitride bilayer as a primer and a nitride/diamond-like ceramic layer such as TiN/ZrN/diamond, CN102378830a discloses a copper tableware coating technology using a composite deposition metal substrate of cathode arc + sputtering and a nitride/carbonitride alternating layer such as (Ti, al, cr) N/CrN, and the two prior art are mainstream technical schemes of the current PVD coating cookers, but there are still a plurality of technical defects which are difficult to solve: 1. The core coating system has the defect of high-temperature stability, wherein the prior art uses nitride/carbonitride as a core functional layer, the nitride is easy to undergo further oxidation or nitridation reaction with oxygen and nitrogen atoms in a high-temperature environment, so that the components and microstructure of the film layer are degraded, the wear resistance and the non-tackiness can be greatly reduced after long-term high-temperature use, and the cooking requirement of Chinese high-temperature quick-frying is difficult to adapt; 2. The substrate/primer structure design has the defects of binding force and process defect that the US6197438B1 adopts chromium/chromium nitride to prime, is only physically/chemically combined with a substrate, has limited stress buffering capacity, and has complex process and high cost because part of schemes need to carry out plasma spraying chromium layer treatment on the substrate, the CN102378830A adopts a cathode arc and sputtering composite deposition substrate, the cooperative parameters of the two processes need to be accurately controlled, the process window is narrow, and the mass production difficulty is high; 3. The target material and the functional design are single, and the comprehensive performance cannot be considered, wherein the prior art adopts a single metal target (Ti/Cr/Zr) and a binary/ternary nitride target, the film plating function is only focused on wear resistance and corrosion resistance, the surface energy is high, the double characteristics of hydrophobicity and lipophilicity are difficult to realize, the food is easy to adhere, and the durability of the non-stick performance is poor; 4. the process complexity is high, the production cost is high, the deposition of the nitride/carbonitride system needs to be carried out in a nitrogen atmosphere in the whole process, the control requirements on the vacuum degree and the gas ratio of the equipment are strict, and the complexity of the process flow and the production and manufacturing cost are increased. In addition, the high temperature resistant upper limit of the existing nitride system film plating cooker is generally not more than 400 ℃, and part of the scheme contains diamond/diamond-like coating, so that the problems of high brittleness and easiness