CN-121992477-A - Crystal growth device

CN121992477ACN 121992477 ACN121992477 ACN 121992477ACN-121992477-A

Abstract

The embodiment of the specification provides a crystal growth device, which comprises a crucible, a seed crystal support, a support structure and a guide structure, wherein the crucible is used for containing crystal growth raw materials, at least part of the seed crystal support can be immersed in melt formed by the crystal growth raw materials in the crucible, the seed crystal support comprises a seed crystal bonding surface, the support structure is connected with one side, opposite to the seed crystal bonding surface, of the seed crystal support, a bonding area is arranged in the middle of the seed crystal bonding surface, the guide structure is arranged on the seed crystal bonding surface, the guide structure can form a guide channel, and the bonding area is positioned in the guide channel. The arrangement of the guide channel can increase the flow effect of the melt, promote the uniformity of raw materials in the melt, make the bonding surface of the seed crystal fully contact with the melt, and meanwhile, smooth unordered fluctuation of the melt and promote the crystal growth quality.

Inventors

WANG YU
YE SHUAI
GU PENG
LEI PEI

Assignees

眉山博雅新材料股份有限公司

Dates

Publication Date: 20260508
Application Date: 20241105

Claims (10)

1. A crystal growth apparatus, the apparatus comprising: a crucible for containing a crystal growth material; A seed holder, at least a portion of which is capable of being immersed in a melt formed from the crystal growth feedstock within the crucible, the seed holder comprising a seed bonding surface; the support structure is connected with one side of the seed crystal support opposite to the seed crystal bonding surface; the middle part of the seed crystal bonding surface is provided with a bonding area, the seed crystal bonding surface is provided with a guide structure, the guide structure can form a guide channel, and the bonding area is positioned in the guide channel.
2. The crystal growth apparatus according to claim 1, wherein the seed holder comprises a first layer structure, a second layer structure, and a third layer structure arranged in this order in a height direction, The first layer structure is used for being connected with the supporting structure; The second layer structure is provided with a clamping groove which is used for being matched and clamped with a mounting plate, and one side of the mounting plate, which is away from the first layer structure, is provided with the seed crystal mounting surface; the third layer structure is provided with the guide structure.
3. The crystal growth apparatus of claim 1, wherein the guide structure includes guide protrusions provided on both sides of the seed crystal bonding surface, the guide passage is formed between the two guide protrusions, a mounting protrusion is provided in a middle portion of the guide passage, and the bonding region is located at the mounting protrusion.
4. The crystal growing apparatus of claim 1, wherein the guide structure includes guide protrusions provided on both sides of the seed crystal bonding surface, the guide passage being formed between the guide protrusions, and the bonding region being located in a middle portion of the guide passage.
5. The crystal growth apparatus of claim 1, wherein the guide structure includes a plurality of guide protrusions disposed around the bonding region, the plurality of guide protrusions extending from edges of the seed bonding surface toward the bonding region in a middle portion of the seed bonding surface, respectively, and the guide channels being formed between any adjacent guide protrusions.
6. The crystal growth apparatus of claim 1, wherein the guide structure has a height difference of less than or equal to 1mm.
7. The crystal growing apparatus of claim 1 wherein the support structure is configured to rotate the seed holder.
8. The crystal growing apparatus of claim 7 wherein the seed holder is disposed at the bottom of the crucible, the seed bonding surface is disposed at the top of the seed holder, and the bottom of the seed holder is connected to the bottom of the crucible by the support structure; Or the seed crystal support is arranged at the top of the melt, the seed crystal bonding surface is positioned at the bottom of the seed crystal support, and the supporting structure is in transmission connection with the second rotating mechanism.
9. The crystal growing apparatus of claim 8, wherein the support structure comprises a plurality of support rods connected end to end in sequence, any two adjacent support rods being nested by bearings, the ratio of the diameter of the seed holder to the diameter of the support rods being 3.5-16.
10. The crystal growth apparatus of claim 1, wherein a ratio of a diameter of the seed holder to an inner diameter of the crucible is 4/5 to 7/8.

Description

Crystal growth device Technical Field The specification relates to the field of crystal preparation technology, and in particular relates to a crystal growth device. Background The fabrication of semiconductor electronic and optoelectronic devices generally requires single crystal materials, and their performance tends to be closely related to the purity, uniformity and cycle integrity of single crystals. Thus, the preparation of semiconductor single crystals has an important influence on semiconductor devices. Therefore, the application provides a crystal growth device and a raw material recovery method, so as to improve the preparation quality of crystals. Disclosure of Invention The embodiment of the specification provides a crystal growth device, which comprises a crucible, a seed crystal support, a supporting structure and a crystal growth device, wherein the crucible is used for containing crystal growth raw materials, at least part of the seed crystal support can be immersed in melt formed by the crystal growth raw materials in the crucible, the seed crystal support comprises a seed crystal bonding surface, the supporting structure is connected with one side, opposite to the seed crystal bonding surface, of the seed crystal support, a bonding area is arranged in the middle of the seed crystal bonding surface, a guide structure is arranged on the seed crystal bonding surface, a guide channel can be formed by the guide structure, and the bonding area is positioned in the guide channel. In some embodiments, the seed crystal support comprises a first layer structure, a second layer structure and a third layer structure which are sequentially arranged along the height direction, wherein the first layer structure is used for being connected with the supporting structure, the second layer structure is provided with a clamping groove which is used for being matched and clamped with a mounting plate, one side, away from the first layer structure, of the mounting plate is provided with the seed crystal mounting surface, and the third layer structure is provided with the guiding structure. In some embodiments, the guiding structure comprises guiding protrusions arranged on two sides of the bonding surface of the seed crystal, the guiding channel is formed between the two guiding protrusions, a mounting protrusion is arranged in the middle of the guiding channel, and the bonding area is located in the mounting protrusion. In some embodiments, the guiding structure comprises guiding protrusions arranged on two sides of the bonding surface of the seed crystal, the guiding channel is formed between the two guiding protrusions, and the bonding area is located in the middle of the guiding channel. In some embodiments, the guide structure includes a plurality of guide protrusions disposed around the bonding region, the plurality of guide protrusions extending from edges of the seed bonding surface toward the bonding region in the middle of the seed bonding surface, respectively, with the guide channels formed between any adjacent guide protrusions. In some embodiments, the guide structure has a height difference of less than or equal to 1mm. In some embodiments, the support structure is configured to rotate the seed holder. In some embodiments, the seed crystal support is arranged at the bottom of the crucible, the seed crystal bonding surface is arranged at the top of the seed crystal support, the bottom of the seed crystal support is connected with the bottom of the crucible through the supporting structure, or the seed crystal support is arranged at the top of the melt, the seed crystal bonding surface is arranged at the bottom of the seed crystal support, and the supporting structure is in transmission connection with the second rotating mechanism. In some embodiments, the support structure comprises a plurality of support rods connected end to end in sequence, any two adjacent support rods are connected in a nested manner through bearings, and the ratio of the diameter of the seed crystal holder to the diameter of the support rods is 3.5-16. In some embodiments, the ratio of the diameter of the seed holder to the inner diameter of the crucible is 4/5-7/8. The crystal growth device has the advantages that (1) the guide structure is arranged on the seed crystal bonding surface to form the guide channel, so that the guide effect is achieved, the flow effect of melt is increased, the uniformity of raw materials in the melt is improved, (2) the guide channel is arranged to ensure the full contact between the seed crystal bonding surface and the melt and the crystal growth quality is improved, and (3) the guide structure is arranged, so that the guide structure can play a role in buffering when the melt flows into the guide structure, effectively and gently disorder fluctuation of the melt, influence of Lorentz force is reduced, and the crystal growth quality is improved. Drawings The present specification will be furt