CN-121992478-A - Crystal growth device

Abstract

The embodiment of the specification provides a crystal growth device, which comprises a crucible, a seed crystal support, a supporting structure and a cooling assembly, wherein the crucible is used for containing crystal growth raw materials, the seed crystal support can be at least partially immersed in a melt formed by the crystal growth raw materials in the crucible, the seed crystal support comprises a seed crystal bonding surface, the supporting structure is connected with one side, opposite to the seed crystal bonding surface, of the seed crystal support, and the cooling assembly comprises a flow guide structure arranged in the seed crystal support and used for guiding a cooling medium so as to enable the cooling medium to cool the seed crystal bonding surface. The cooling assembly is arranged to cool the seed crystal bonding surface, so that radial temperature distribution of the seed crystal bonding surface is more uniform, meanwhile, the temperature near the seed crystal bonding surface is lower, the temperature gradient of the seed crystal bonding surface and other areas of the melt in the axial direction is increased, and the growth rate and quality of crystals are improved.

Inventors

• WANG YU
• GU PENG

Assignees

• 眉山博雅新材料股份有限公司

Dates

Publication Date

20260508

Application Date

20241105

Claims (10)

1. 1. A crystal growth apparatus, the apparatus comprising: a crucible for containing a crystal growth material; A seed holder, at least a portion of which is capable of being immersed in a melt formed from the crystal growth feedstock within the crucible, the seed holder comprising a seed bonding surface; the support structure is connected with one side of the seed crystal support opposite to the seed crystal bonding surface; The cooling assembly comprises a flow guide structure arranged in the seed crystal support, and the flow guide structure is used for guiding a cooling medium so that the cooling medium cools the bonding surface of the seed crystal.
2. 2. The crystal growth apparatus of claim 1, wherein the cooling assembly further comprises a hollow structure disposed within the support structure, the hollow structure cooperating with the flow directing structure.
3. 3. The crystal growth apparatus of claim 2, wherein the hollow structure includes a first cooling channel and a second cooling channel, the flow directing structure includes a flow directing ring disposed within the seed holder, an inner bore of the flow directing ring is in communication with the first cooling channel, a cavity space between the flow directing ring and a housing of the seed holder is in communication with the second cooling channel, and the cavity space is in communication with the inner bore.
4. 4. The crystal growth apparatus of claim 3, wherein the first cooling channel is disposed within the second cooling channel, the second cooling channel surrounds the first cooling channel, a top end of the cavity space is in communication with the second cooling channel, and a bottom end of the cavity space is in communication with the inner bore.
5. 5. The crystal growth apparatus of claim 4, wherein the cooling medium flows in a direction from an edge of the seed bonding surface toward a center of the seed bonding surface on the seed bonding surface.
6. 6. The crystal growth apparatus of claim 5, wherein the flow path of the cooling structure is configured to enter the top end of the cavity space from the second cooling channel and to enter the first cooling channel from the internal bore communicating with the bottom end of the cavity space.
7. 7. The crystal growth apparatus of claim 2, wherein the flow directing structure comprises a central channel and an edge channel, the edge channel is disposed around the central channel, the flow directing inlet of the central channel and the flow directing inlet of the edge channel are both disposed on top of the seed crystal holder, and the flow directing inlet of the central channel and the flow directing inlet of the edge channel are respectively in communication with the hollow structure, the flow directing outlet of the edge channel is located at an edge of the seed crystal bonding surface, and the flow directing outlet of the central channel is located in a central region of the seed crystal bonding surface.
8. 8. The crystal growing apparatus of claim 7 wherein the seed bonding surface of the seed holder is provided with a baffle plate, the baffle plate having an area greater than the area of the seed bonding surface in a direction perpendicular to the seed bonding surface, the baffle plate being provided with a baffle plate at an edge thereof, the baffle plate extending from the edge of the baffle plate toward a top of the seed holder.
9. 9. The crystal growth apparatus of claim 8, wherein an angle between the baffle and the baffle is 95 ° -130 °.
10. 10. The crystal growth apparatus of claim 7, wherein the cooling medium flows in a direction from the flow guiding outlet of the center passage to the edge of the seed crystal bonding surface at the seed crystal bonding surface.

Description

Crystal growth device Technical Field The specification relates to the field of crystal preparation technology, and in particular relates to a crystal growth device. Background The fabrication of semiconductor electronic and optoelectronic devices generally requires single crystal materials, and their performance tends to be closely related to the purity, uniformity and cycle integrity of single crystals. Thus, the preparation of semiconductor single crystals has an important influence on semiconductor devices. Therefore, the application provides a crystal growth device and a raw material recovery method, so as to improve the preparation quality of crystals. Disclosure of Invention The embodiment of the specification provides a crystal growth device, which comprises a crucible, a seed crystal support, a supporting structure and a cooling assembly, wherein the crucible is used for containing crystal growth raw materials, the seed crystal support can be immersed in melt formed by the crystal growth raw materials in the crucible, the seed crystal support comprises a seed crystal bonding surface, the supporting structure is connected with one side, opposite to the seed crystal bonding surface, of the seed crystal support, the cooling assembly comprises a flow guide structure arranged in the seed crystal support, and the flow guide structure is used for guiding a cooling medium so as to enable the cooling medium to cool the seed crystal bonding surface. In some embodiments, the cooling assembly further comprises a hollow structure disposed within the support structure, the hollow structure cooperating with the flow guiding structure. In some embodiments, the hollow structure comprises a first cooling channel and a second cooling channel, the flow guiding structure comprises a flow guiding ring arranged in the seed crystal holder, an inner hole of the flow guiding ring is communicated with the first cooling channel, a cavity space between the flow guiding ring and a shell of the seed crystal holder is communicated with the second cooling channel, and the cavity space is communicated with the inner hole. In some embodiments, the first cooling channel is disposed within the second cooling channel, the second cooling channel surrounds the first cooling channel, the top end of the cavity space is in communication with the second cooling channel, and the bottom end of the cavity space is in communication with the inner bore. In some embodiments, the direction of flow of the cooling medium on the seed bonding surface is from the edge of the seed bonding surface to the center of the seed bonding surface. In some embodiments, the flow path of the cooling structure is configured to enter the top end of the cavity space from the second cooling channel and to enter the first cooling channel from the inner bore communicating with the bottom end of the cavity space. In some embodiments, the flow guiding structure includes a central channel and an edge channel, the edge channel is disposed around the central channel, the flow guiding inlet of the central channel and the flow guiding inlet of the edge channel are both disposed on the top of the seed crystal support, and the flow guiding inlet of the central channel and the flow guiding inlet of the edge channel are respectively communicated with the hollow structure, the flow guiding outlet of the edge channel is located at the edge of the seed crystal bonding surface, and the flow guiding outlet of the central channel is located in the central area of the seed crystal bonding surface. In some embodiments, the seed crystal bonding surface of the seed crystal holder is provided with a baffle, the area of the baffle is larger than that of the seed crystal bonding surface in the direction perpendicular to the seed crystal bonding surface, the edge of the baffle is provided with a deflector, and the deflector extends from the edge of the baffle towards the top direction of the seed crystal holder. In some embodiments, the angle between the baffle and the baffle is 95 ° -130 °. In some embodiments, the cooling medium flows in a direction from the diversion outlet of the central channel to the diversion outlet of the edge channel to the edge of the seed crystal bonding surface. The crystal growth device has the advantages that (1) the cooling component is arranged to cool the seed crystal bonding surface, the temperature near the seed crystal bonding surface is lower, the temperature gradient between the seed crystal bonding surface and other areas of a melt in the axial direction is increased, the growth rate and the quality of crystals are improved, (2) the flow direction of a cooling medium is controlled through the design of the cooling structure, the radial temperature distribution of the seed crystal bonding surface is more uniform, the crystal growth quality is improved, and (3) the cooling medium is separated from the outside through the arrangement of the hollow structure, s