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CN-121992479-A - Crystal growth device and raw material recovery method

CN121992479ACN 121992479 ACN121992479 ACN 121992479ACN-121992479-A

Abstract

The embodiment of the specification provides a crystal growth device and a raw material recovery method, wherein the device comprises a crucible for containing crystal growth raw materials, a seed crystal support, at least part of the seed crystal support can be immersed in melt formed by the crystal growth raw materials in the crucible, the seed crystal support comprises a seed crystal bonding surface, and a first support structure connected with one side, opposite to the seed crystal bonding surface, of the seed crystal support and configured to drive the seed crystal support to rotate. Simultaneously, the rotation of the seed crystal support can also improve the radial solute distribution uniformity of the bonding surface of the seed crystal and promote the growth quality of the crystal.

Inventors

  • WANG YU
  • LEI PEI
  • GU PENG

Assignees

  • 眉山博雅新材料股份有限公司

Dates

Publication Date
20260508
Application Date
20241105

Claims (15)

  1. 1. A crystal growth apparatus, the apparatus comprising: a crucible for containing a crystal growth material; A seed holder, at least a portion of which is capable of being immersed in a melt formed from the crystal growth feedstock within the crucible, the seed holder comprising a seed bonding surface; And the first support structure is connected with one side, opposite to the seed crystal bonding surface, of the seed crystal support and is configured to drive the seed crystal support to rotate.
  2. 2. The crystal growing apparatus of claim 1 wherein the seed holder is disposed at the bottom of the crucible and the seed bonding surface is disposed at the top of the seed holder, the bottom of the seed holder being connected to the bottom of the crucible by the first support structure.
  3. 3. The crystal growing apparatus of claim 2 further comprising a first rotating mechanism located outside the crucible, the first rotating mechanism magnetically coupled to the first support structure, the first rotating mechanism magnetically rotating the first support structure.
  4. 4. The crystal growing apparatus of claim 1 wherein the seed holder is disposed on top of the melt, the seed bonding surface is disposed on the bottom of the seed holder, and the first support structure is drivingly coupled to the second rotation mechanism.
  5. 5. The crystal-growth apparatus of claim 1, wherein the crystal-growth apparatus includes a second support structure, and the crystal-growth feedstock includes a source rod that is at least partially submerged in the melt, one end of the source rod being coupled to the second support structure.
  6. 6. The crystal-growth apparatus of claim 5, wherein the crystal-growth apparatus includes a drive structure, the second support structure includes a main rod and a plurality of spaced apart support rods, each of the support rods having one end connected to at least one of the source rods, and another end connected to the main rod, the main rod being connected to the drive structure, the drive mechanism driving the second support structure to move so that different ones of the source rods can be immersed in the melt.
  7. 7. The crystal growth apparatus of claim 6, wherein the main rod is connected to a telescoping structure or each of the support rods is connected to a corresponding one of the telescoping structures, the telescoping structures telescoping to submerge or extract the source rod from the melt.
  8. 8. The crystal growth apparatus of claim 5, wherein the second support structure is drivingly connected to a third rotation mechanism, the third rotation mechanism driving the second support structure to rotate to drive the source rod.
  9. 9. The crystal growing apparatus of claim 4, wherein the first support structure comprises a plurality of support rods connected end to end in sequence, any two adjacent support rods being nested and connected by a bearing; the rotational speed of the first support structure is 10rpm-200rpm.
  10. 10. The crystal growing apparatus of claim 1, wherein the crucible is coupled to a third support structure having a ratio of rotational speed of the third support structure to rotational speed of the first support structure of 0.4-0.75.
  11. 11. A crystal raw material recovery method comprises the following steps: after the crystal growth is finished, obtaining the residual raw materials solidified in the crucible; processing the residual raw materials; and supplementing new raw materials based on the residual raw materials after treatment, and preparing new raw materials capable of being used for crystal growth.
  12. 12. The method of claim 11, wherein said treating said remaining feedstock comprises: Crushing the residual raw materials to obtain crushed particles; removing impurities from the crushed particles; and cleaning and drying the crushed particles after impurity removal.
  13. 13. The method of claim 12, wherein the removing impurities from the crushed particles comprises acid washing the crushed particles.
  14. 14. The method of claim 12, wherein the washing and drying the decontaminated crushed particles comprises: ultrasonic washing is carried out on the crushed particles after impurity removal; drying the crushed particles subjected to ultrasonic water washing; Grinding the dried broken particles.
  15. 15. The method of claim 14, further comprising classifying the size of the crushed particles to obtain first particles having a size greater than or equal to a predetermined threshold and second particles having a size less than the predetermined threshold; The grinding of the dried broken particles comprises grinding at least part of the second particles; The preparation of the new raw material for crystal growth based on the processed residual raw material, supplementing new raw material, comprises the following steps: Analyzing the ground second particles to determine the mixture ratio of the residual materials; Determining a compensation ratio based on the residual material ratio and a preset ratio; Based on the compensation proportion, supplementing the new material; Preparing the new feedstock capable of being used for crystal growth based on the remaining feedstock after treatment and the additional new feedstock.

Description

Crystal growth device and raw material recovery method Technical Field The specification relates to the technical field of crystal preparation, in particular to a crystal growth device and a raw material recovery method. Background The fabrication of semiconductor electronic and optoelectronic devices generally requires single crystal materials, and their performance tends to be closely related to the purity, uniformity and cycle integrity of single crystals. Thus, the preparation of semiconductor single crystals has an important influence on semiconductor devices. Therefore, the application provides a crystal growth device and a raw material recovery method, so as to improve the preparation quality of crystals. Disclosure of Invention The embodiment of the specification provides a crystal growth device, which comprises a crucible, a seed crystal support and a first supporting structure, wherein the crucible is used for containing crystal growth raw materials, at least part of the seed crystal support can be immersed in a melt formed by the crystal growth raw materials in the crucible, the seed crystal support comprises a seed crystal bonding surface, and the first supporting structure is connected with one side, opposite to the seed crystal bonding surface, of the seed crystal support and is configured to drive the seed crystal support to rotate. In some embodiments, the seed crystal support is disposed at a bottom of the crucible, the seed crystal bonding surface is disposed at a top of the seed crystal support, and the bottom of the seed crystal support is connected to the bottom of the crucible by the first support structure. In some embodiments, the crystal growing apparatus further comprises a first rotating mechanism located outside the crucible, the first rotating mechanism is magnetically connected with the first supporting structure, and the first rotating mechanism drives the first supporting structure to rotate through magnetic force. In some embodiments, the seed crystal holder is disposed at a top of the melt, the seed crystal bonding surface is disposed at a bottom of the seed crystal holder, and the first support structure is in driving connection with the second rotation mechanism. In some embodiments, the crystal growth apparatus includes a second support structure, and the crystal growth feedstock includes a source rod that is at least partially submerged within the melt, one end of the source rod being connected to the second support structure. In some embodiments, the crystal growing apparatus includes a drive structure, the second support structure includes a main rod and a plurality of spaced struts, each strut has one end connected to at least one of the source rods, and each strut has another end connected to the main rod, the main rod being connected to the drive structure, the drive mechanism driving the second support structure to move so that different source rods can be immersed in the melt. In some embodiments, the main rod is connected to a telescopic structure, or each of the support rods is connected to a corresponding telescopic structure, respectively, the telescopic structure being telescopic to submerge the source rod in the melt or to lift the source rod from the melt. In some embodiments, the second support structure is in transmission connection with a third rotation mechanism, and the third rotation mechanism drives the second support structure to rotate so as to drive the source rod to rotate. In some embodiments, the first support structure comprises a plurality of support rods which are connected end to end in sequence, any two adjacent support rods are connected in a nested manner through bearings, and the rotating speed of the first support structure is 10rpm-200rpm. In some embodiments, the crucible is coupled to a third support structure having a ratio of rotational speed of the third support structure to rotational speed of the first support structure of 0.4-0.75. The embodiment of the specification also provides a crystal raw material recovery method, which comprises the steps of obtaining the residual raw material solidified in the crucible after crystal growth is finished, processing the residual raw material, and supplementing new raw material based on the processed residual raw material to prepare the new raw material capable of being used for crystal growth. In some embodiments, the processing the residual raw materials comprises crushing the residual raw materials to obtain crushed particles, removing impurities from the crushed particles, and cleaning and drying the crushed particles after the impurities are removed. In some embodiments, the removing the impurities from the crushed particles includes pickling the crushed particles. In some embodiments, the cleaning and drying of the crushed particles after the impurity removal comprises ultrasonic washing of the crushed particles after the impurity removal, drying of the crushed particles after the u