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CN-121992484-A - Base transmission device for liquid phase epitaxy horizontal silicon carbide epitaxial furnace

CN121992484ACN 121992484 ACN121992484 ACN 121992484ACN-121992484-A

Abstract

The invention relates to a base transmission device for a liquid phase epitaxial horizontal silicon carbide epitaxial furnace, which comprises a transmission assembly, a rotating assembly and a positioning assembly, wherein the transmission assembly comprises a first connecting rod, a second connecting rod and a connecting piece, one end of the second connecting rod and one end of the first connecting rod are detachably connected through the connecting piece, the connecting piece can drive the first connecting rod and the second connecting rod to deflect at multiple angles, the rotating assembly comprises a first shaft, a first shaft sleeve, a second shaft sleeve, a shell, a positioning piece and a base, the axis of the first shaft and the axis of the second shaft are perpendicular and are arranged at intervals, the positioning piece near the transmission assembly is abutted to the first shaft sleeve along the axial direction of the shell, the positioning piece is detachably connected with the shell, the shell is provided with a cavity and a plane part, the first shaft sleeve, the second shaft sleeve and the positioning piece are arranged in the cavity, and the base is arranged on the upper side surface of the plane part.

Inventors

  • LAN TU

Assignees

  • 诸暨晶氢新材料科技有限公司

Dates

Publication Date
20260508
Application Date
20251230

Claims (8)

  1. 1. A susceptor assembly for a liquid phase epitaxial horizontal silicon carbide epitaxial furnace, comprising: The transmission assembly (1) comprises a first connecting rod (101), a second connecting rod (102) and connecting pieces (103), wherein the number of the connecting pieces (103) is at least two, one end of the second connecting rod (102) and one end of the first connecting rod (101) are detachably connected through the connecting pieces (103), and the connecting pieces (103) can drive the first connecting rod (101) and the second connecting rod (102) to deflect at multiple angles; The rotating assembly (2) comprises a first shaft (201), a first shaft sleeve (202), a second shaft (203), a second shaft sleeve (204), a shell (205), a positioning piece (206) and a base (207), wherein the axis of the first shaft (201) and the axis of the second shaft (203) are perpendicular and are arranged at intervals, the first shaft sleeve (202) is arranged on the outer diameter surface of the first shaft (201), the second shaft sleeve (204) is arranged on the outer diameter surface of the second shaft (203), the positioning piece (206) is arranged at least two, the positioning piece (206) which is close to the transmission assembly (1) is in butt joint with the first shaft (201) along the axial direction of the shell (205), the positioning piece (206) is arranged at two ends of the shell (205), the positioning piece (206) is detachably connected with the shell (205), the shell (205) is provided with a cavity (2051) and a plane part (2052), the first shaft (201), the first shaft sleeve (202), the second shaft sleeve (203) and the plane part (204) are arranged on the plane part (205) along the cavity (2052) and the plane part (205) are arranged in the vertical direction of the base (205), the base (207) is detachably connected with the second shaft (203); the rotating component (2) is detachably connected with the transmission component (1).
  2. 2. The susceptor transmission for a liquid phase epitaxial horizontal silicon carbide epitaxial furnace according to claim 1, characterized in that the rotating assembly (2) further comprises a buffer member (208), the buffer member (208) is arranged between the second shaft sleeve (204) and the cavity (2051) in the vertical direction, and the buffer member (208) is abutted with both the lower side of the second shaft sleeve (204) and the upper side of the cavity (2051).
  3. 3. The susceptor transmission for a liquid phase epitaxial horizontal silicon carbide epitaxial furnace according to claim 1, wherein the housing (205) further comprises a first mounting groove (2053) and a third mounting groove (2054), the first mounting groove (2053) being provided on an inner diameter surface of a lower side of the cavity (2051) in a vertical direction, the third mounting groove (2054) being provided on an inner diameter surface of an upper side of the cavity (2051), the first mounting groove (2053) and the third mounting groove (2054) being coaxially provided; In the vertical direction, the lower part of the second shaft (203) is mounted in the first mounting groove (2053), and the lower part of the second shaft (203) is mounted in the third mounting groove (2054).
  4. 4. The susceptor transmission for a liquid phase epitaxial horizontal silicon carbide epitaxial furnace according to claim 1, wherein the housing (205) further comprises second mounting grooves (2055), the second mounting grooves (2055) are provided in at least two groups, each group of the second mounting grooves (2055) is provided in at least two, two groups of the second mounting grooves (2055) are respectively provided at both ends of the planar portion (2052) in the axial direction of the housing (205), one of the second mounting grooves (2055) is provided at an upper side surface of the planar portion (2052) in the vertical direction, and the other second mounting groove (2055) is provided at an upper side of both end surfaces of the planar portion (2052) in the axial direction of the housing (205); In the vertical direction, the upper side of the positioning member (206) is mounted in the second mounting groove (2055) provided in the upper side surface of the planar portion (2052).
  5. 5. The susceptor transmission for a liquid phase epitaxial horizontal silicon carbide epitaxial furnace according to claim 4, characterized in that the positioning member (206) further comprises a main body (2061) and a protrusion (2062), the main body (2061) and the protrusion (2062) being integrally formed, the protrusion (2062) being disposed above the main body (2061) in the vertical direction; the protruding part (2062) is detachably connected to the second mounting groove (2055) provided on the end surface of the planar part (2052) in the axial direction of the housing (205).
  6. 6. The susceptor transmission for a liquid phase epitaxial horizontal silicon carbide epitaxial furnace according to claim 5, characterized in that the main body (2061) includes a plurality of mounting holes (20611) and fixing holes (20612), each fixing hole (20612) being disposed at intervals in a vertical direction and below the main body (2061), the mounting holes (20611) being disposed at intervals above the fixing holes (20612), the protrusions (2062) being disposed at intervals above the mounting holes (20611); the first shaft (201) is detachably connected with the mounting hole (20611).
  7. 7. Susceptor transmission for liquid phase epitaxial horizontal silicon carbide epitaxy furnaces according to claim 1, characterized in that said rotating assembly (2) further comprises axial-radial conversion means (209), said axial-radial conversion means (209) being provided in at least two, one of said axial-radial conversion means (209) being provided on the outer diameter face of said first shaft (201) and the other axial-radial conversion means (209) being provided on the outer diameter face of said second shaft (203), the two axial-radial conversion means (209) being intermeshed; The axial-radial conversion mechanism (209) arranged on the first shaft (201) and the positioning piece (206) close to the transmission assembly (1) are respectively abutted against two ends of the first shaft sleeve (202) along the axial direction of the shell (205); the axial-radial conversion mechanism (209) provided on the second shaft (203) is located on the upper side of the second shaft (203) in the vertical direction, and the axial-radial conversion mechanism (209) abuts against the second sleeve (204).
  8. 8. The susceptor transmission for liquid phase epitaxial horizontal silicon carbide epitaxial furnaces according to claim 5, characterized in that said rotating assembly (2) further comprises a stabilizing piece (210), said stabilizing piece (210) comprising an arc-shaped portion (2101) and a fixed portion (2102), said arc-shaped portion (2101) being in abutment with the lower side of said cavity (2051) in the vertical direction, said arc-shaped portion (2101) being fixedly connected with said cavity (2051); The fixing portion (2102) is provided with a plurality of fixing holes (20612), and the fixing portion (2102) limits the positioning piece (206) through the fixing holes (20612).

Description

Base transmission device for liquid phase epitaxy horizontal silicon carbide epitaxial furnace Technical Field The invention belongs to the technical field of semiconductor silicon carbide epitaxial growth equipment, and particularly relates to a base transmission device for a liquid phase epitaxial horizontal silicon carbide epitaxial furnace. Background The liquid phase epitaxy horizontal silicon carbide epitaxial furnace is used as main stream equipment in the semiconductor field, and is widely applied to high-end fields such as infrared detectors, high-power lasers and the like by virtue of the remarkable advantages of low crystal defect density, high doping efficiency, high growth rate, low equipment cost and the like. The monolithic horizontal hot wall cavity is a common structure for realizing silicon carbide homoepitaxy, and one of the core technologies is stable rotation of a base so as to ensure uniformity and low defect rate of an epitaxial layer. Currently, the industry generally adopts a gas-lift air-entraining flow pushing mode to drive a base to rotate. According to the technology, high-pressure inert gas is introduced into a spiral gas diversion trench on the bottom surface of a base, the base is suspended by utilizing the pressure of the gas flow, and meanwhile, the rotating moment is generated by impacting the trench wall through the gas flow. However, the scheme has the inherent defects that firstly, the stability is poor, the slight fluctuation of the air flow pressure leads to the obvious change of the air floatation height, the thickness deviation of epitaxial layers is up to 8-12%, secondly, the turbulence generated in the flow guide groove can damage the uniform distribution of reactants in the furnace to cause the fluctuation of doping concentration to +/-15%, furthermore, the purity is sensitive, the substrate is directly polluted by trace impurities in the air, the defect density is rapidly increased, and finally, the cost is high, the consumption of single-day air is huge, the cost is up to 40%, the processing precision requirement of parts such as the air flow guide groove is extremely high, and the manufacturing cost is far higher than that of a common mechanical structure. In summary, these drawbacks limit the improvement of the epitaxial quality and the reduction of the production cost, so the development of a new stable transmission scheme for replacing the existing gas drive has become an urgent need in the industry. Disclosure of Invention The invention aims to overcome the defects of poor rotation stability of a base and easiness in interference of air flow in the process environment in the prior art, thereby providing a base transmission device for a liquid phase epitaxial horizontal silicon carbide epitaxial furnace. In order to achieve the above purpose, the invention adopts the following technical scheme: A susceptor drive assembly for a liquid phase epitaxial horizontal silicon carbide epitaxial furnace, comprising: The transmission assembly comprises at least two first connecting rods, at least two second connecting rods and at least two connecting pieces, wherein one end of each second connecting rod and one end of each first connecting rod are detachably connected through the corresponding connecting piece, and the connecting pieces can drive the first connecting rods and the second connecting rods to realize multi-angle deflection; The rotary assembly comprises a first shaft, a first shaft sleeve, a second shaft sleeve, a shell, positioning pieces and a base, wherein the axis of the first shaft is vertical to the axis of the second shaft at intervals, the first shaft sleeve is arranged on the outer diameter surface of the first shaft, the second shaft sleeves are arranged on the outer diameter surface of the second shaft, the positioning pieces are at least two, the positioning pieces are abutted to the first shaft sleeve along the axial direction of the shell and close to the transmission assembly, the positioning pieces are arranged at two ends of the shell, the positioning pieces are detachably connected with the shell, the shell is provided with a cavity and a plane part, the first shaft sleeve, the second shaft sleeve and the positioning pieces are all arranged in the cavity, the base is arranged on the upper side surface of the plane part along the vertical direction, and the base is detachably connected with the second shaft. The rotating component is detachably connected with the transmission component. Preferably, the rotating assembly further comprises a buffer member, the buffer member is arranged between the second sleeve and the cavity along the vertical direction, and the buffer member is in butt joint with the lower side of the second sleeve and the upper side of the cavity. Preferably, the housing further comprises a first mounting groove and a third mounting groove, the first mounting groove is arranged on an inner diameter surface of the lower s