CN-121992489-A - Quartz device for gallium oxide epitaxy and epitaxy equipment thereof

CN121992489ACN 121992489 ACN121992489 ACN 121992489ACN-121992489-A

Abstract

The invention provides a quartz device for gallium oxide epitaxy and epitaxy equipment thereof, and relates to the technical field of gallium oxide epitaxy. According to the invention, the first quartz cavity, the second quartz cavity and the gas mixing pipeline are integrated and arranged in the epitaxial cavity, and the introduced gaseous chlorine gas and the carbon group simple substance in the first quartz cavity are utilized to directly react in the cavity to generate the carbon group chloride. The epitaxial cavity is in a high-temperature environment, and carbon group chlorides generated by reaction in the epitaxial cavity are in a gaseous state, so that full-link heat preservation heating and steam pressure control in an external conveying process can be avoided, the process is simplified, and the control is convenient. The problems of concentration fluctuation caused by easy condensation of carbon group chloride steam and difficult regulation and control of low concentration flow in the prior art are avoided, the components and the concentration stability of the reaction gas introduced into the surface of the substrate are ensured, and the growth rate and the doping uniformity of the gallium oxide epitaxial layer are further ensured.

Inventors

Dong Zengyin
WANG YINGMIN
CHENG HONGJUAN
LI HE
ZHANG SONG
HUO XIAOQING
GAO FEI
ZHANG SHENGNAN

Assignees

中国电子科技集团公司第四十六研究所

Dates

Publication Date: 20260508
Application Date: 20251231

Claims (10)

1. The quartz device for gallium oxide epitaxy is characterized by being arranged in an epitaxy cavity and comprises a first chlorine pipeline, a second chlorine pipeline, a first quartz cavity, a second quartz cavity and a gas mixing pipeline; one end of the first chlorine pipeline is used for being connected with a chlorine source outside the epitaxial furnace, and the other end of the first chlorine pipeline is connected with an air inlet end of the first quartz cavity; one end of the second chlorine pipeline is used for being connected with a chlorine source outside the epitaxial furnace, and the other end of the second chlorine pipeline is connected with an air inlet end of the second quartz cavity; The first quartz cavity is used for placing carbon group simple substances, and the second quartz cavity is used for placing metal gallium; and the gas outlet ends of the first quartz cavity and the second quartz cavity are connected with the gas mixing pipeline, wherein the outlet of the gas mixing pipeline faces the surface of the substrate on which gallium oxide is to be grown when gallium oxide is delayed.
2. The gallium oxide epitaxial quartz device of claim 1, wherein the first quartz chamber is disposed above the second quartz chamber; A first air outlet pipeline is arranged between the air outlet end of the first quartz cavity and the air mixing pipeline, the first air outlet pipeline penetrates through the second quartz cavity, and the inner space of the first air outlet pipeline is not communicated with the inner space of the second quartz cavity.
3. A gallium oxide epitaxial quartz apparatus according to claim 2, wherein the first gas outlet conduit extends vertically through a lower chamber wall of the first quartz chamber; The first end of the first air outlet pipeline is arranged in the first quartz cavity, and the second end of the first air outlet pipeline is arranged outside the first quartz cavity, wherein the height of the first end from the lower cavity wall is higher than the height of the carbon group simple substance to be placed.
4. The gallium oxide epitaxial quartz device of claim 2, wherein a second gas outlet pipeline is further arranged between the gas outlet end of the second quartz cavity and the gas mixing pipeline; The second air outlet pipeline vertically penetrates through the lower cavity wall of the second quartz cavity; the first end of the second air outlet pipeline is arranged in the second quartz cavity, the second end of the second air outlet pipeline is arranged outside the second quartz cavity, and the height of the first end from the lower cavity wall is higher than the height of the metal gallium to be placed.
5. The gallium oxide-epitaxial quartz device of claim 4, wherein an end of the second gas outlet conduit is in sealed communication with an end of the gas mixing conduit; The pipe diameter of the second air outlet pipeline is larger than that of the first air outlet pipeline; the first air outlet pipeline is nested in the second air outlet pipeline and penetrates through two ends of the second air outlet pipeline; the second end of the first outlet pipe extends into the gas mixing pipe.
6. The gallium oxide-epitaxial quartz device of claim 1, further comprising an oxygen conduit; one end of the oxygen pipeline is used for being connected with an oxygen source outside the epitaxial furnace, and an outlet at the other end faces the surface of the substrate on which gallium oxide is to be grown.
7. The gallium oxide epitaxial quartz device of claim 6, wherein the outlet end of the oxygen conduit is annular surrounding the gas mixing conduit.
8. The gallium oxide-epitaxial quartz device of claim 6, further comprising an isolated nitrogen gas conduit: one end of the isolation nitrogen pipeline is used for being connected with a nitrogen source outside the epitaxial furnace, and an outlet at the other end of the isolation nitrogen pipeline is arranged between an outlet of the oxygen pipeline and an outlet of the gas mixing pipeline.
9. The gallium oxide epitaxial quartz device of claim 6, wherein the oxygen conduit outlet is less distant from the substrate than the gas mixture conduit outlet.
10. Gallium oxide epitaxy apparatus comprising an epitaxy chamber, a susceptor and a quartz device for gallium oxide epitaxy according to any one of claims 1 to 9; The quartz device and the base are arranged in the epitaxial cavity; The upper surface of the base is used for bearing a substrate on which gallium oxide is to be grown; The quartz device is arranged above the base, wherein the outlet of the gas mixing pipeline faces to the surface of the substrate on which gallium oxide is to be grown from top to bottom.

Description

Quartz device for gallium oxide epitaxy and epitaxy equipment thereof Technical Field The invention relates to the technical field of gallium oxide epitaxy, in particular to a quartz device for gallium oxide epitaxy and epitaxy equipment thereof. Background The gallium oxide material is used as a novel wide forbidden band semiconductor material, has high voltage resistance, low loss, good chemical and thermal stability, and has wide application prospect in the fields of high-voltage high-power devices, solar blind ultraviolet detection and the like. The gallium oxide high-voltage high-power device needs to be lightly doped and thick epitaxial layers as device layers, the thickness of the epitaxial layers needs to be more than 7 mu m, and the carrier concentration needs to be between 10 15cm-3-1018cm-3. Among the epitaxial methods such as MOCVD, MBE and HVPE, the HVPE method is a method with a relatively high growth rate, and has remarkable advantages in the aspect of preparing gallium oxide power devices with vertical structures. The HVPE method is a gas phase epitaxy method, in a source region, gallium chloride is generated by reacting gallium metal with chlorine or hydrogen chloride gas, the gallium chloride is carried to a growth temperature region by nitrogen, gallium oxide is generated by reacting gallium chloride with oxygen, and the gallium chloride is deposited on the surface of a substrate. The doping element of the n-type gallium oxide epitaxial layer grown by the HVPE method is usually chloride of carbon group elements such as silicon, germanium, tin and the like. The gallium oxide epitaxial layer is lightly doped and has a relatively low carrier concentration, typically on the order of 10 15-1016cm-3, requiring a relatively low chloride concentration, e.g., on the order of ppm or ppb, to be introduced into the HVPE chamber. Under normal temperature, the carbon group chloride generally takes a liquid or solid form, the volatile chloride vapor is conveyed into an epitaxial cavity through a carrier gas N 2 in a water bath mode, and is doped into gallium oxide through a chemical reaction to replace Ga to form a donor, and the donor can provide free electrons to form carriers. Multiple dilutions are also required during chloride vapor delivery to ensure that chloride concentrations reach ppm or ppb levels. And the chloride steam conveying process needs to control the steam pressure and temperature, prevent condensation into a liquid state and avoid blocking pipelines and valves. The method has the advantages that the doping of the chloride of the carbon group element needs to be controlled by regulating various doping process parameters to realize accurate control of the doping concentration, the process is complex, and the control is difficult. Disclosure of Invention The embodiment of the invention provides a quartz device for gallium oxide epitaxy and epitaxy equipment thereof, which are used for solving the problems that the existing carbon group chloride doping mode is complex in process and difficult to control during gallium oxide epitaxy growth. The embodiment of the invention provides a quartz device for gallium oxide epitaxy, which is arranged in an epitaxial cavity, and comprises a first chlorine pipeline, a second chlorine pipeline, a first quartz cavity, a second quartz cavity and a gas mixing pipeline, wherein one end of the first chlorine pipeline is used for being connected with a chlorine source outside an epitaxial furnace, the other end of the first chlorine pipeline is connected with an air inlet end of the first quartz cavity, one end of the second chlorine pipeline is used for being connected with the chlorine source outside the epitaxial furnace, the other end of the second chlorine pipeline is connected with the air inlet end of the second quartz cavity, the first quartz cavity is used for placing carbon elements, the second quartz cavity is used for placing metal gallium, air outlet ends of the first quartz cavity and the second quartz cavity are both connected with the gas mixing pipeline, and an outlet of the gas mixing pipeline faces to the surface of a substrate on which gallium oxide is to be grown when gallium oxide is in epitaxy. In one possible implementation manner, the first quartz cavity is arranged above the second quartz cavity, the gas mixing pipeline is arranged below the second quartz cavity, a first gas outlet pipeline is further arranged between the gas outlet end of the first quartz cavity and the gas mixing pipeline, the first gas outlet pipeline penetrates through the second quartz cavity, and the inner space of the first gas outlet pipeline is not communicated with the inner space of the second quartz cavity. In one possible implementation manner, the first air outlet pipeline vertically penetrates through the lower cavity wall of the first quartz cavity, the first end of the first air outlet pipeline is arranged in the first quartz cavity, the second en