CN-121992490-A - MOCVD reactor for normal pressure growth and film growth method

Abstract

The invention relates to an MOCVD reactor for normal pressure growth and a film growth method, belongs to the technical field of semiconductor material preparation, and solves the problems of front thickness, rear thickness, poor uniformity and local accumulation of a film formed by a horizontal air inlet MOCVD reactor in the prior art. The reaction device comprises a reaction chamber, an air inlet assembly and a reaction assembly, wherein the reaction assembly is arranged in the center of the reaction chamber, the air inlet assembly is arranged on a first side of the reaction assembly and is used for providing reaction gas for the reaction assembly, the reaction gas enters the reaction assembly in a layered manner, and the reaction gas comprises upper ammonia, middle MO source, carrier gas and lower ammonia. The invention can improve the uniformity of the formed film and reduce the local accumulation.

Inventors

• JIN XIAOQIN
• LI SHUTIAN
• NIE HAIPENG

Assignees

• 苏州中科重仪半导体材料有限公司

Dates

Publication Date

20260508

Application Date

20260115

Claims (10)

1. 1. The MOCVD reactor growing at normal pressure is characterized by comprising a reaction chamber (1), an air inlet component (2) and a reaction component (3); the reaction assembly (3) is arranged in the center of the reaction chamber (1), and the air inlet assembly (2) is arranged on the first side of the reaction assembly (3) and is used for providing reaction gas for the reaction assembly (3); The reaction chamber (1) is provided with an exhaust pipe (11), the exhaust pipe (11) is arranged on a second side of the reaction assembly (3), and the first side is opposite to the second side.
2. 2. An atmospheric pressure grown MOCVD reactor according to claim 1, characterized in that the gas inlet assembly (2) comprises a carrier gas pipe (22), through which carrier gas pipe (22) the reaction gases enter the reaction assembly (3).
3. 3. An atmospheric pressure grown MOCVD reactor according to claim 2, further comprising a nozzle (23), the nozzle (23) being in communication with the carrier gas tube (22).
4. 4. The atmospheric pressure growth MOCVD reactor according to claim 1, wherein the nozzle of the exhaust pipe (11) is arranged downward, the exhaust pipe (11) is of an inverted cone-shaped structure, and the exhaust pipe (11) is used for exhausting the exhaust gas generated by the reaction assembly (3).
5. 5. The atmospheric pressure growth MOCVD reactor according to claim 1, further comprising a rotating assembly (4), wherein the reaction assembly (3) comprises a substrate (33), the rotating assembly (4) is disposed at a lower portion of the substrate (33), and the substrate (33) rotates with the rotating assembly (4).
6. 6. The MOCVD reactor according to claim 5, wherein the rotating assembly (4) comprises a rotating magnetic fluid (43), the rotating magnetic fluid (43) being arranged outside the rotating assembly (4).
7. 7. The atmospheric pressure grown MOCVD reactor according to claim 6, wherein the rotating assembly (4) comprises a gear set (44) and a carrier plate (45), the carrier plate (45) being used for fixing a tray (41) and a substrate (33), the gear set (44) being used for adjusting the size of the carrier plate (45).
8. 8. The atmospheric pressure growth MOCVD reactor according to claim 5, further comprising heating assemblies disposed inside the rotating assembly (4), the heating assemblies being distributed along a radial direction of the substrate (33).
9. 9. An atmospheric pressure grown MOCVD reactor according to claim 8, wherein the heating assembly is a separate temperature controlled electrode (5).
10. 10. A film growth method, characterized in that the MOCVD reactor for normal pressure growth according to any of claims 1 to 9 is used, comprising the steps of: step 1, introducing MO source gas and carrier gas and ammonia gas according to a set proportion; And 2, reacting ammonia gas and MO source gas in a reaction assembly (3) and discharging waste gas.

Description

MOCVD reactor for normal pressure growth and film growth method Technical Field The invention relates to the technical field of semiconductor material preparation, in particular to an MOCVD reactor for normal pressure growth and a film growth method. Background In MOVCD (metal organic chemical vapor deposition) epitaxial growth process engineering, large-size substrates of 8 inches and above in the existing normal pressure MOCVD have the problem of difference of center and edge growth rates, and the utilization rate of MO (metal organic compound) sources is low, and formed films are thick before and after, have poor uniformity and cause local accumulation. Disclosure of Invention In view of the above analysis, the embodiment of the invention aims to provide an atmospheric pressure growth MOCVD reactor and a film growth method, which are used for solving one of the problems of front thickness, rear thickness, poor uniformity and local accumulation of a film formed by a horizontal air inlet MOCVD reactor in the prior art. Providing an MOCVD reactor growing at normal pressure, comprising a reaction chamber, an air inlet component and a reaction component; The reaction chamber is provided with an exhaust pipe, the exhaust pipe is arranged on a second side of the reaction assembly, and the first side is opposite to the second side. Further, the gas inlet assembly includes a carrier gas pipe through which the reactant gas enters the reaction assembly. Further, a nozzle is also included, which is in communication with the carrier gas tube. Further, the pipe orifice of the exhaust pipe is downwards arranged, the exhaust pipe is of an inverted conical structure, and the exhaust pipe is used for exhausting waste gas generated by the reaction assembly. The reaction assembly comprises a substrate, wherein the rotation assembly is arranged at the lower part of the substrate, and the substrate rotates along with the rotation assembly. Further, the rotating assembly further comprises a rotating magnetic fluid, and the rotating magnetic fluid is arranged outside the rotating assembly. Further, the rotating assembly comprises a gear set and a carrier plate, wherein the carrier plate is used for fixing the tray and the substrate, and the gear set is used for adjusting the size of the carrier plate. Further, the substrate heating device further comprises heating components, wherein the heating components are arranged inside the rotating components, and the heating components are distributed along the radial direction of the substrate. Further, the heating component is an independent temperature control electrode. In another aspect of the present invention, a film growth method is provided, and the MOCVD reactor for normal pressure growth is adopted, which specifically comprises the following steps: step 1, introducing MO source gas and carrier gas and ammonia gas according to a set proportion; and 2, reacting ammonia gas and MO source gas in a reaction assembly, and discharging waste gas. Further, the reactant gas is layered into the reaction assembly, the reactant gas comprising an upper ammonia gas, a middle MO source, and carrier gas, and a lower ammonia gas. The carrier gas pipe comprises a first carrier gas pipe, a second carrier gas pipe and a third carrier gas pipe, wherein the first carrier gas pipe is used for conveying upper ammonia gas, the second carrier gas pipe is used for conveying a middle-layer MO source, and the third carrier gas pipe is used for conveying lower ammonia gas; The first carrier gas pipe, the second carrier gas pipe and the third carrier gas pipe all comprise an air inlet end and an air injection end, the air inlet end is communicated with the nozzle, and the air injection end is communicated with the reaction assembly. Further, the air inlet assembly further comprises a water box, and the first air carrying pipe, the second air carrying pipe and the third air carrying pipe further comprise middle sections which are horizontally overlapped in the water box; and cooling water is arranged in the water box and used for cooling the middle section. Further, the air injection end is a horizontally extending end of the intermediate section. The support frame is sleeved outside the rotating shaft of the rotating assembly, and a plurality of extending rods with T-shaped grooves are radially outwards radiated, wherein the T-shaped grooves are arranged along the length direction of the extending rods; One end of the telescopic rod is slidably arranged in the T-shaped groove, and the other end of the telescopic rod is used for clamping the tray and the substrate. Further, the gear set comprises a gear disc and a driving gear, the driving gear is meshed with the gear disc, and the rotation of the driving gear can drive the gear disc to rotate; The gear plate is provided with a plurality of arc-shaped through grooves which extend obliquely outwards from the central axis of the gear plate, wherein each arc-sh