CN-121992492-A - Wafer thin film deposition machine and wafer thin film deposition system

Abstract

The invention provides a wafer film deposition machine and a wafer film deposition system, wherein the wafer film deposition machine comprises a reaction cavity, a base, a movable shielding piece and a shielding piece, wherein a first conveying opening is formed in the side wall of the reaction cavity, the first conveying opening conducts the inside of the reaction cavity with the outside of the reaction cavity, a wafer enters and exits the reaction cavity through the first conveying opening, the base is arranged in the reaction cavity and used for bearing the wafer, and the shielding piece can be used for opening or closing the first conveying opening. When the wafer is required to be transferred into the reaction cavity to perform the film deposition reaction, the first conveying opening is opened by moving the shielding piece, and when the wafer is conveyed into the reaction cavity to perform the film deposition reaction, the shielding piece is moved to close the first conveying opening, so that process gas is prevented from entering a conveying channel outside the reaction cavity through the first conveying opening, the inner wall of the conveying channel is prevented from being polluted, and therefore pollution particles of the wafer in the conveying process are prevented from falling on the surface of the wafer, and the yield of products is improved.

Inventors

• LI BING
• WANG WEI

Assignees

• 芯恩（青岛）集成电路有限公司

Dates

Publication Date

20260508

Application Date

20241106

Claims (10)

1. 1. A wafer thin film deposition tool, comprising: The side wall of the reaction cavity is provided with a first conveying port, and the first conveying port conducts the inside of the reaction cavity with the outside; the wafer enters and exits the reaction cavity through a first conveying port; The base is arranged in the reaction cavity and used for bearing a wafer; a movable shutter which can be used to open or close the first transfer port.
2. 2. The wafer thin film deposition tool of claim 1, further comprising a liner assembly disposed within the reaction chamber and surrounding the susceptor, the liner assembly comprising the movable shield.
3. 3. The wafer film deposition tool of claim 2, wherein the liner assembly further comprises a liner ring and a driver; The lining ring is arranged in the reaction cavity and surrounds the base, a second conveying port is formed in the side wall of the lining ring, corresponding to the first conveying port, and the second conveying port is communicated with the first conveying port; the shielding piece is movably arranged in the second conveying port; the driver is connected with the shielding piece and is used for driving the shielding piece to open or close the second conveying opening.
4. 4. The wafer thin film deposition machine of claim 3, wherein a chute is formed at the bottom or the top of the second transfer port, and the chute penetrates the liner ring from the bottom of the second transfer port; The shielding piece is arranged in the chute in a sliding way, the shielding piece is provided with a shielding part and a connecting part, the shielding part is matched with the second conveying opening, and the connecting part extends out from the bottom or the top of the chute; the driver is positioned in the reaction cavity and connected with the connecting part; When the second conveying port needs to be closed, the driver drives the shielding part to extend out to block the second conveying port, and when the second conveying port needs to be opened, the driver drives the shielding part to retract into the sliding groove.
5. 5. The wafer thin film deposition tool of claim 4, wherein the driver is preset with a first retract distance; when the driver drives the shielding part to retract into the chute until stopping according to the first retraction distance, part of the shielding part protrudes out of the inner side wall at the bottom or the top of the second conveying opening.
6. 6. A wafer film deposition system is characterized by comprising a wafer buffer machine, a connecting piece and the wafer film deposition machine of any one of claims 1 to 5; The connecting piece is provided with a transmission channel, a first connecting end and a second connecting end, the transmission channel is arranged along the axial direction of the connecting piece and conducts the first connecting end and the second connecting end, the first connecting end is connected with the reaction cavity, and the second connecting end is connected with the wafer cache machine; The wafer buffer machine is used for storing wafers and can convey the wafers into the reaction cavity through the transmission channel.
7. 7. The wafer thin film deposition system of claim 6, further comprising a gas manifold; the top of the transmission channel is provided with an installation groove; The gas flow dividing piece is arranged in the mounting groove and is provided with a first exhaust hole and a second exhaust hole, the first exhaust hole is used for injecting gas towards the first connecting end, the second exhaust hole is used for blowing gas towards the bottom of the transmission channel to form a gas curtain, and the gas curtain separates the transmission channel.
8. 8. The wafer thin film deposition system of claim 7, wherein the gas manifold has a gas inlet tube and a manifold body; The split-flow main body is provided with a first exhaust channel and a second exhaust channel along the axial direction of the split-flow main body, the split-flow main body is provided with a first side wall and a second side wall, the first side wall is adjacent to the second side wall and is perpendicular to the second side wall, a plurality of first exhaust holes are formed in the first side wall at intervals, the first exhaust holes are communicated with the first exhaust channel, a plurality of second exhaust holes are formed in the second side wall at intervals, and the second exhaust holes are communicated with the second exhaust channel; one end of the air inlet pipe is communicated with the first exhaust channel and the second exhaust channel, and the other end of the air inlet pipe is used for accessing purge gas.
9. 9. The wafer film deposition system of claim 7 or 8, wherein the liner assembly comprises a liner ring and a driver; The lining ring is arranged in the reaction cavity and surrounds the base, a second conveying port is formed in the side wall of the lining ring, corresponding to the first conveying port, and the second conveying port is communicated with the first conveying port; the shielding piece is movably arranged in the chute of the second conveying opening; the driver is connected with the shielding piece, and a first extending distance is preset for the driver; when the driver drives the shielding piece to extend out of the sliding groove according to the first extending distance until the shielding piece is stopped, a gap is formed between the top of the shielding piece and the top inner side wall of the second conveying opening, and the first exhaust hole blows towards the gap.
10. 10. The wafer thin film deposition system of claim 9, wherein a width of a purge area formed by purging the plurality of first exhaust holes is greater than a width of the gap.

Description

Wafer thin film deposition machine and wafer thin film deposition system Technical Field The present invention relates to the field of semiconductor processing equipment, and in particular, to a wafer thin film deposition machine and a wafer thin film deposition system. Background Epitaxial growth (EPI) is a process of depositing a thin layer of monocrystalline material on a monocrystalline substrate, which EPI is typically accomplished by chemical vapor deposition (Chemical Vapor Deposition, CVD) within a tool. The machine is internally provided with a reaction cavity, a base is arranged in the reaction cavity and is used for placing a wafer, the reaction cavity is communicated with the wafer cache machine through a slit channel, and the wafer enters and exits the reaction cavity through the slit channel. The slit channel is long and narrow in position, and is difficult to remove by HCl etching (namely, an etching mode of removing part of materials on the surface of a material by chemical reaction by using hydrogen chloride gas as an etchant), so that the longer and thicker the coating is in the slit channel, if the coating falls off and falls on a wafer, the coating becomes pollution particles on the surface of the wafer, and further the yield of the product is damaged. Disclosure of Invention The invention aims to provide a wafer film deposition machine and a wafer film deposition system, which can prevent wafers from being polluted and improve the yield of products. In order to achieve the above object, in a first aspect, the present invention provides a wafer thin film deposition apparatus, comprising: The side wall of the reaction cavity is provided with a first conveying port, and the first conveying port conducts the inside of the reaction cavity with the outside; the wafer enters and exits the reaction cavity through a first conveying port; The base is arranged in the reaction cavity and used for bearing a wafer; a movable shutter which can be used to open or close the first transfer port. The wafer film deposition machine has the beneficial effects that the movable shielding piece is arranged in the reaction cavity, so that the first conveying opening can be opened or closed by the shielding piece. Therefore, when the wafer is required to be transferred into the reaction cavity to perform the film deposition reaction, the first transfer port is required to be opened by moving the shielding piece, and when the wafer is transferred onto the base in the reaction cavity to perform the film deposition reaction, the shielding piece is moved to close the first transfer port, so that the process gas is prevented from entering the transmission channel positioned outside the reaction cavity through the first transfer port, the inner wall of the transmission channel is prevented from being polluted, and therefore, the pollution particles of the wafer in the process of transfer are prevented from falling on the surface of the wafer, and the yield of products is improved. In some embodiments, the wafer thin film deposition apparatus further comprises a liner assembly disposed within the reaction chamber and surrounding the susceptor, the liner assembly including the movable shutter. In some embodiments, the liner assembly includes a liner ring and a driver; The lining ring is arranged in the reaction cavity and surrounds the base, a second conveying port is formed in the side wall of the lining ring, corresponding to the first conveying port, and the second conveying port is communicated with the first conveying port; the shielding piece is movably arranged in the second conveying port; The driver is connected with the shielding piece and is used for driving the shielding piece to open or close the second conveying opening. The inner lining assembly has the beneficial effects that the inner lining assembly comprises the inner lining ring and the driver, the inner lining ring is positioned in the reaction cavity and sleeved on the base, the side wall of the inner lining ring is provided with the second conveying port corresponding to the first conveying port, and the second conveying port is communicated with the first conveying port, so that a wafer needs to enter the reaction cavity through the first conveying port and the second conveying port in the conveying process. The shielding piece is movably arranged at the second conveying port, the driver is connected with the shielding piece, and the shielding piece is driven to open or close the second conveying port, so that the condition that the process gas is attached to the second conveying port, the first conveying port and a conveying channel positioned outside the reaction cavity to form pollution particles and cannot be cleaned is avoided, the possibility of pollution to wafers is reduced, and the yield of products is improved. In some embodiments, a chute is formed at the bottom or the top of the second conveying port, and the chute penetrates through t