CN-121992501-A - Gas supply system for epitaxial equipment and silicon carbide epitaxial equipment

CN121992501ACN 121992501 ACN121992501 ACN 121992501ACN-121992501-A

Abstract

The application discloses a gas supply system for epitaxial equipment and silicon carbide epitaxial equipment. The first gas pipeline, the second gas pipeline, the third gas pipeline, the fourth gas pipeline, the fifth gas pipeline, the sixth gas pipeline and the seventh gas pipeline, wherein one end of the first pipeline is connected with the epitaxial device, the other end of the first pipeline is connected with the third gas pipeline, the fourth gas pipeline, the fifth gas pipeline and the sixth gas pipeline respectively, the first MO source and the second MO source are connected with the epitaxial device, the other end of the second pipeline is connected with the second gas pipeline respectively, one end of the third pipeline is connected with the epitaxial device, the other end of the third pipeline is connected with the first gas pipeline and the seventh gas pipeline respectively, purge gas is introduced into the first gas pipeline, carrier gas is introduced into the second gas pipeline, and process gas is introduced into the third gas pipeline and the sixth gas pipeline. The system can configure corresponding process gas according to the requirement, and reduce the pipeline adjustment time.

Inventors

CHENG JINBIAO
LI DA
HUANG MINGHAI
CAO YI
Jiao Shunping

Assignees

芯三代半导体科技(苏州)股份有限公司

Dates

Publication Date: 20260508
Application Date: 20241104

Claims (10)

1.A gas supply system for an epitaxial apparatus, comprising: A first gas pipeline, a second gas pipeline, a third gas pipeline, a fourth gas pipeline, a fifth gas pipeline, a sixth gas pipeline, a first pipeline, a second pipeline and a third pipeline, One end of the first pipeline is connected with the epitaxial device, the other end of the first pipeline is respectively connected with the third gas pipeline, the fourth gas pipeline, the fifth gas pipeline, the sixth gas pipeline, the first MO source and the second MO source, one end of the second pipeline is connected with the epitaxial device, the other end of the second pipeline is respectively connected with the second gas pipeline, One end of the third pipeline is connected with the epitaxial device, the other end is connected with the first gas pipeline, The first gas pipeline is filled with purge gas, the second gas pipeline is filled with carrier gas, and at least one of the third gas pipeline and the sixth gas pipeline is used for filling process gas.
2. A gas supply system for an epitaxial apparatus according to claim 1, The device further comprises a fourth pipeline, one end of the fourth pipeline is connected with the epitaxial device, the other end of the fourth pipeline is connected to the third pipeline, and purge gas is introduced into the epitaxial device through the fourth pipeline.
3. The gas supply system for an epitaxial apparatus of claim 1, wherein the first gas line is connected to the second gas line via an eleventh pneumatic valve.
4. A gas supply system for an epitaxial apparatus according to claim 3, The first gas pipeline is connected with a third gas pipeline through a seventh pneumatic valve; the first gas pipeline is connected with a fourth gas pipeline through an eighth pneumatic valve; The first gas pipeline is connected with a fifth gas pipeline through a ninth pneumatic valve; The first gas pipeline is connected with a sixth gas pipeline through a tenth pneumatic valve.
5. A gas supply system for an epitaxial apparatus according to claim 1, The second gas line is connected to a first MO source via a first one-way valve and to a second MO source via a second one-way valve.
6. The gas supply system for an epitaxial apparatus according to claim 1, further comprising a seventh gas line connected to the first gas line and having a connection point located on an upstream side of the first pneumatic valve, the seventh gas line being connected to the third line through which gas is introduced into the epitaxial apparatus, The first gas pipeline, the second gas pipeline, the third gas pipeline, the fourth gas pipeline, the fifth gas pipeline, the sixth gas pipeline and the seventh gas pipeline are all provided with manual valves on the air inlet end sides.
7. A gas supply system for an epitaxial apparatus according to any one of claims 1 to 6, The epitaxial device is characterized by further comprising a fifth pipeline, wherein the fifth pipeline is connected with the epitaxial device and is used for exhausting gas.
8. The gas supply system for an epitaxial apparatus of claim 7, The fifth pipeline comprises a first exhaust gas outlet manifold, a second exhaust gas outlet manifold and a third exhaust gas outlet manifold, One side of the first tail gas exhaust branch is connected with the upstream of the first pneumatic ball valve arranged on the fifth pipeline, One side of the second tail gas exhaust branch is connected with the downstream of the first pneumatic ball valve arranged on the fifth pipeline, And one side of the third tail gas exhaust branch is connected with the upstream of the second pneumatic ball valve arranged on the fifth pipeline.
9. A silicon carbide epitaxy apparatus characterized by having a housing on which a spray device is provided, said spray device being connected to the gas supply system according to any one of claims 1 to 8, the bottom side of the housing being connected to a tail gas discharge line by a line.
10. The silicon carbide epitaxy apparatus of claim 9, wherein there is a housing to which a pressure gauge is connected, the pressure gauge being configured to detect a pressure of the reaction chamber.

Description

Gas supply system for epitaxial equipment and silicon carbide epitaxial equipment Technical Field The application relates to the technical field of epitaxy, in particular to a gas supply system for epitaxial equipment and silicon carbide epitaxial equipment. Background As a third-generation semiconductor material, a Silicon Carbide (SiC) semiconductor has the characteristics of high critical breakdown field strength, high thermal conductivity, high electron saturation drift speed, large forbidden bandwidth and the like, greatly expands the energy processing capacity of a power device, and can meet the requirements of next-generation power electronic equipment on the operation of the power device under larger power, smaller volume and harsher conditions. At present, a high-temperature CVD epitaxial device is mostly used for preparing SiC epitaxial films. The gas supply system of the SiC epitaxial equipment ensures stable supply and accurate regulation of various source gases and carrier gases, and plays a decisive role in the quality of the SIC epitaxial film. Conventional gas supply systems include a reaction chamber, a gas delivery system, a pressure control system, a temperature control system, an exhaust gas treatment system, and a safety interlock system. Abrupt or small fluctuations in the feed system can lead to reduced yields of product, increasing the production costs of SiC epitaxy. Disclosure of Invention In order to overcome the defects, the application aims to provide a gas supply system for epitaxial equipment and silicon carbide epitaxial equipment, wherein the gas supply system can switch matched process gases according to different requirements to realize the growth of various epitaxial films. In order to achieve the above purpose, the application adopts the following technical scheme: A gas supply system for an epitaxial apparatus, having: A first gas pipeline, a second gas pipeline, a third gas pipeline, a fourth gas pipeline, a fifth gas pipeline and a sixth gas pipeline, A first pipeline, a second pipeline and a third pipeline, One end of the first pipeline is connected with the epitaxial device, the other end of the first pipeline is respectively connected with a third gas pipeline, a fourth gas pipeline, a fifth gas pipeline, a sixth gas pipeline gas6, a first MO source and a second MO source, One end of the second pipeline is connected with the epitaxy equipment, the other end is respectively connected with the second gas pipeline, One end of the third pipeline is connected with the epitaxial device, the other end is connected with the first gas pipeline, The first gas pipeline is filled with purge gas, the second gas pipeline is filled with carrier gas, and the third gas pipeline and the sixth gas pipeline are filled with process gas. The gas supply system can provide matched process gases according to different requirements, so that various epitaxial film growth can be realized. And a purge gas is provided during maintenance of the epitaxial apparatus. Preferably, the gas supply system further comprises a fourth pipeline, one end of the fourth pipeline is connected with the epitaxial device, the other end of the fourth pipeline is connected to the third pipeline, and purge gas is introduced into the epitaxial device through the fourth pipeline. Preferably, the first gas line is connected to the second gas line via an eleventh pneumatic valve. Preferably, the first gas pipeline is connected with the third gas pipeline through a seventh pneumatic valve; the first gas pipeline is connected with a fourth gas pipeline through an eighth pneumatic valve; The first gas pipeline is connected with a fifth gas pipeline through a ninth pneumatic valve; The first gas pipeline is connected with a sixth gas pipeline through a tenth pneumatic valve V. Preferably, the first gas pipe is connected to a manifold, which is connected to a seventh-tenth pneumatic valve. Preferably, the second gas line is connected to the first MO source via a first one-way valve and to the second MO source via a second one-way valve. Preferably, the gas supply system further comprises a seventh gas line connected to the first gas line and having a connection point located on an upstream side of the first pneumatic valve, the seventh gas line being connected to the third line through which gas is introduced into the epitaxial apparatus, The air inlet end sides of the first air pipeline, the second air pipeline, the third air pipeline, the fourth air pipeline, the fifth air pipeline, the sixth air pipeline and the seventh air pipeline are provided with manual valves, and the air inlet end sides of the first air pipeline, the second air pipeline, the third air pipeline, the fourth air pipeline, the fifth air pipeline, the sixth air pipeline and the seventh air pipeline are provided with manual valves. This facilitates manual adjustment during maintenance. Preferably, the gas supply system further comprises a fifth pipeline,