CN-121992508-A - Simple spliced single crystal growth system

CN121992508ACN 121992508 ACN121992508 ACN 121992508ACN-121992508-A

Abstract

The invention belongs to the technical field of large-size diamond monocrystal growth, and particularly relates to a simple spliced monocrystal growth system which is used for inhibiting polycrystal growth at a monocrystal joint position and comprises a variable-size limiting device, wherein the variable-size limiting device can adjust the size of a limiting space according to the requirements of different monocrystal growth splicing sizes. The invention can meet the high-quality growth requirement of spliced single crystals with different sizes and regular special-shaped structures, can inhibit the growth of polycrystal at the joint position through the tight combination of crystals, ensures the evenness of the surface of the grown crystals and the uniformity of the heat dissipation of edge crystals, and greatly improves the defects and stress distribution at the position of the spliced crystals.

Inventors

LI LI
GUO MINGMING
HUI XINQING
LI MINGZHU
XUE TENGFEI

Assignees

河南飞孟金刚石股份有限公司

Dates

Publication Date: 20260508
Application Date: 20260209

Claims (6)

1. A simple spliced single crystal growth system is used for inhibiting the growth of polycrystal at a single crystal joint position and is characterized by comprising a variable size limiting device, wherein the variable size limiting device can adjust the size of a limiting space according to the requirements of different single crystal growth splicing sizes.
2. The simple spliced single crystal growth system according to claim 1, wherein the variable-size limiting device comprises a molybdenum support, molybdenum screws and fixing strips, the inner sides of the fixing strips are in contact with edges of single crystals to be spliced, the shapes of the fixing strips are matched with the edges of the single crystals to be spliced, threaded connecting seats are arranged on the outer sides of the fixing strips respectively, the threaded connecting seats are obliquely connected to the corresponding fixing strips, the molybdenum support is annular, a plurality of adjusting seats are uniformly distributed on the outer periphery of the molybdenum support, each adjusting seat is respectively in threaded connection with a molybdenum screw, the molybdenum screws can penetrate through the adjusting seat in an adjustable mode and extend to the inner sides of the molybdenum support, the inner ends of the molybdenum screws are in one-to-one rotary connection with the threaded connecting seats on the fixing strips, and each fixing strip encloses an annular space capable of enabling each spliced single crystal to tightly collide.
3. The simple spliced single crystal growing system of claim 2, wherein the outer end of the molybdenum screw is located outside the adjusting seat, and a rotating block is fixed to the outer end of the molybdenum screw.
4. The simple spliced single crystal growth system of claim 2, wherein the molybdenum support is circular, the fixing strips are straight strips, the number of the fixing strips is four, and the four fixing strips can be adjusted to form a square or rectangle.
5. The simple spliced single crystal growing system of claim 4, wherein the axial angle of the fixing strip and the threaded connection seat is 30-60 °.
6. The simple tiled single crystal growth system according to any of claims 1-5, wherein the fixation bar is a molybdenum structure.

Description

Simple spliced single crystal growth system Technical Field The invention belongs to the technical field of large-size diamond single crystal growth, and particularly relates to a simple spliced single crystal growth system. Background In the field of large-size diamond single crystal growth, a spliced diamond single crystal is usually used for large-size growth in the industry so as to meet the requirements of the market on the large-size single crystal, but when the large-size single crystal with high quality is spliced, the spliced crystal can be moved due to temperature change, gas fluctuation, crystal edge change and other reasons in a furnace body, so that the envisaged splicing position and design are changed, the quality of the spliced crystal is affected, and meanwhile, the phenomenon of uneven heat conduction of the side of the crystal can be caused. Therefore, there is a need to propose a simple spliced single crystal growth system to avoid this phenomenon. Disclosure of Invention Aiming at the problems existing in the prior art, the invention provides a simple spliced single crystal growth system, which aims to solve the problems that the quality of crystals is affected and the heat conduction of the side edges of the crystals is uneven by changing the envisaged splicing position and design after splicing in the prior art. In order to achieve the above object, the present invention provides a simple spliced single crystal growth system for inhibiting the growth of polycrystal at the joint position of single crystal, comprising a variable size limiting device capable of adjusting the size of a limiting space according to the requirements of different single crystal growth splice sizes. Preferably, the variable size limiting device comprises a molybdenum support, molybdenum screws and fixing strips, wherein the inner sides of the fixing strips are in contact with edges of single crystals to be spliced, the shapes of the fixing strips are matched with the edges of the single crystals to be spliced, each fixing strip is provided with a threaded connecting seat, the threaded connecting seats are obliquely connected to the corresponding fixing strips, the molybdenum support is annular, a plurality of adjusting seats are uniformly distributed on the periphery of the molybdenum support, each adjusting seat is respectively in threaded connection with one molybdenum screw, the molybdenum screws can penetrate through the adjusting seats and extend to the inner sides of the molybdenum support, the inner ends of the molybdenum screws are in one-to-one corresponding rotary connection with the threaded connecting seats on the fixing strips, and each fixing strip encloses into an annular space capable of enabling each spliced single crystal to tightly collide. Preferably, the outer end of the molybdenum screw is positioned at the outer side of the adjusting seat, and the outer end of the molybdenum screw is fixed with a rotating block, so that the molybdenum screw is conveniently rotated, and the position of the fixing strip in the molybdenum support is adjusted. Preferably, the fixing strips are straight strips, the number of the fixing strips is four, and the four fixing strips can be adjustable to form a square or rectangle. Preferably, the axial included angle between the fixing strip and the threaded connecting seat is 30-60 degrees. Preferably, the fixing strip is of a molybdenum structure. The principle of the invention is that the edges of each spliced single crystal are tightly contacted through the structural design of the molybdenum support, the molybdenum screw and the fixing strip, the side edges are uniformly radiated, the requirements of different growth splicing sizes are met through the variable sizes, the main principle is that the crystals to be spliced are cut into square, rectangle or other regular shapes with consistent fixed sizes according to the requirements, then the cut crystals are placed in the square, rectangle or other regular shapes surrounded by the fixing strip structure through the molybdenum support for fixing, and the crystals are grown according to the required process after the fixing is completed. Compared with the prior art, the scheme has the following advantages: The invention can meet the high-quality growth requirement of spliced single crystals with different sizes and regular special-shaped structures, can inhibit the growth of polycrystal at the joint position through the tight combination of crystals, ensures the evenness of the surface of the grown crystals and the uniformity of the heat dissipation of edge crystals, and greatly improves the defects and stress distribution at the position of the spliced crystals. Drawings Fig. 1 is a schematic view of a variable size stop device according to the present invention in a use state. Fig. 2 is a schematic view of another use state of the variable dimension limiter according to the present invention. FIG. 3 is a Raman