CN-121992509-A - Processing method of monocrystalline quartz material

CN121992509ACN 121992509 ACN121992509 ACN 121992509ACN-121992509-A

Abstract

A processing method of a single crystal quartz material comprises the following steps. And determining a to-be-processed area where the monocrystalline quartz material is easy to generate bicrystal. And modifying the region to be processed on the monocrystalline quartz material by using a modifier, so that the processing difficulty of the region to be processed is reduced. And processing the monocrystalline quartz material in the modified area to be processed by using a processor.

Inventors

LIN CHENGWEI
WANG WENKAI

Assignees

台湾晶技股份有限公司

Dates

Publication Date: 20260508
Application Date: 20241206
Priority Date: 20241106

Claims (8)

1. A method of processing a single crystal quartz material, comprising: determining a region to be processed, in which the monocrystalline quartz material is easy to generate bicrystals; Modifying the region to be processed on the single crystal quartz material by using a modifier to reduce the processing difficulty of the region to be processed, and And processing the monocrystalline quartz material in the modified region to be processed by using a processor.
2. The method of claim 1, wherein the reduced processing difficulty comprises an etch rate increase of at least 200%.
3. The method of claim 1, wherein the modifier comprises a heater, a cooler, a plasma machine, an ion bombardment machine, an ion implanter, or a laser.
4. The method of claim 1, wherein the processor comprises a plasma machine, an ion bombardment machine, an ion implanter, or an ultrafast laser with a pulse width of less than 1 nanosecond.
5. The method of claim 1, wherein the processor comprises a dry or wet etcher.
6. The method of processing a single crystal quartz material according to claim 1, wherein the step of modifying a region to be processed on the single crystal quartz material using the modifier comprises the steps of: And in the process of modifying the to-be-processed area on the single crystal quartz material by the modifier, controlling the energy applied to the to-be-processed area by the modifier so that the temperature gradient of the to-be-processed area is less than or equal to the upper limit of the temperature gradient.
7. The method of processing a single crystal quartz material according to claim 1, wherein the step of modifying a region to be processed on the single crystal quartz material using the modifier comprises the steps of: And in the process of modifying the to-be-processed area on the single crystal quartz material by the modifier, controlling accumulated energy applied to the to-be-processed area by the modifier so that the temperature of the to-be-processed area is less than or equal to the upper temperature limit.
8. The method of processing a single crystal quartz material according to claim 1, wherein the step of modifying a region to be processed on the single crystal quartz material using the modifier comprises the steps of: the single crystal quartz material is modified along a specific angle and a specific position of a crystal of the single crystal quartz material.

Description

Processing method of monocrystalline quartz material Technical Field The present invention relates to a processing method, and more particularly, to a processing method of a single crystal quartz material. Background Because the etching process includes multiple processes, such as physical vapor deposition (Physical Vapor Deposition, PVD), lithography, and dry/wet etching, the use of lasers can save the process, reduce the processing cost, reduce the load on the etching station, and thus increase the production efficiency, as compared to using etching to process the material. Currently, ultra-fast lasers are used to process single crystal quartz, with laser wavelengths between 355nm and 1064nm UV to IR wavelengths. The penetration rate of quartz for these wavelengths is close to 90%, so that more energy is required for processing to induce ablation (ablation) on the surface of quartz material, and heat accumulation is excessive. And excessive local temperature or excessive temperature gradient leads to the generation of bicrystals. Disclosure of Invention The invention provides a processing method of a monocrystalline quartz material, which can effectively avoid the generation of double crystals of the monocrystalline quartz material after processing. An embodiment of the present invention provides a method for processing a single crystal quartz material, which includes the following steps. And determining a to-be-processed area where the monocrystalline quartz material is easy to generate bicrystal. And modifying the region to be processed on the monocrystalline quartz material by using a modifier, so that the processing difficulty of the region to be processed is reduced. And processing the monocrystalline quartz material in the modified area to be processed by using a processor. Based on the above, in an embodiment of the present invention, a processing method of a single crystal quartz material uses a reformer to reform a region to be processed on the single crystal quartz material, so that a processing difficulty of the region to be processed is reduced, and uses the processor to process the single crystal quartz material in the region to be processed after being reformed. Therefore, the heat threshold value of the processing effect required in the processing process is effectively reduced by modifying the area to be processed first, and heat accumulation or heat influence can be reduced, so that the processing temperature and the temperature gradient can be reduced. The processing method of the monocrystalline quartz material can further avoid the problem of producing double crystals in the processing process due to the effect that the processing temperature and the temperature gradient can be reduced. Drawings Fig. 1 is a flow chart of a method of processing a single crystal quartz material according to an embodiment of the invention. Fig. 2 is a schematic diagram showing a modifying device modifying a region to be processed on a single crystal quartz material and a processing device processing the single crystal quartz material in the modified region to be processed in a processing method of the single crystal quartz material according to an embodiment of the invention. FIG. 3 is a schematic diagram of an etcher and forming holes in a single crystal quartz material in a method of processing a single crystal quartz material in accordance with an embodiment of the invention. Fig. 4 is a detailed flowchart of step S100 in fig. 1. Fig. 5 is a detailed flowchart of step S100 in fig. 1. Fig. 6 is a detailed flowchart of a processing method of a single crystal quartz material and step S100 of fig. 1 according to another embodiment of the present invention. FIG. 7 is a schematic view of a specific angle or a specific position of a crystal on a single crystal quartz material in a processing method of the single crystal quartz material according to an embodiment of the invention. Detailed Description Fig. 1 is a flow chart of a method of processing a single crystal quartz material according to an embodiment of the invention. Fig. 2 is a schematic diagram showing a modifying device modifying a region to be processed on a single crystal quartz material and a processing device processing the single crystal quartz material in the modified region to be processed in a processing method of the single crystal quartz material according to an embodiment of the invention. Referring to fig. 1 and 2, an embodiment of the invention provides a method for processing a single crystal quartz material M, which includes the following steps. Step S10, determining a to-be-processed area A where the monocrystalline quartz material M is easy to generate bicrystals. In step S100, the reformer 100 is used to reform the area a to be processed on the single crystal quartz material M, so as to reduce the processing difficulty of the area a to be processed. In step S200, the single crystal quartz material M is processed in the modified re