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CN-121993736-A - Gas phase device control method, device, equipment and storage medium

CN121993736ACN 121993736 ACN121993736 ACN 121993736ACN-121993736-A

Abstract

The invention relates to the technical field of gas phase device control, and discloses a gas phase device control method, a device, equipment and a storage medium; the method comprises the steps of calculating the total pressure of a first gas, the flow of a first hydrogen and the temperature of a pipeline based on a preset operation liquid phase prejudging algorithm to obtain a liquid phase possible value, generating a gas phase device bypass control instruction if the liquid phase possible value is larger than a possibility threshold value, generating a gas phase device passage control instruction according to a current vaporization state and a preset error threshold value in a bypass working state, realizing accurate liquid phase risk identification and reliable valve passage switching through multi-dimensional parameter collection and intelligent prejudgment, only acting when completely vaporizing, avoiding misoperation, improving the system logic strictly, improving the gas phase transportation automation and control precision, and guaranteeing continuous, stable and safe operation of trichlorosilane vaporization transportation.

Inventors

  • QIU LIQIN
  • ZHAO HAIYING
  • WANG XIN

Assignees

  • 季华实验室

Dates

Publication Date
20260508
Application Date
20260408

Claims (10)

  1. 1. A gas phase apparatus control method, comprising: Collecting the current total gas pressure and the current hydrogen flow to obtain a first total gas pressure and a first hydrogen flow; collecting the temperature of a pipeline; calculating the total pressure of the first gas, the first hydrogen flow and the pipeline temperature based on a preset operation liquid phase prejudgment algorithm so as to obtain a liquid phase possible value; Judging whether the liquid phase possible value is larger than a preset possibility threshold value or not; If the liquid phase possible value is larger than the possibility threshold value, generating a gas phase device bypass control instruction; under the bypass working state, the current vaporization state is obtained; And generating a gas phase device passage control instruction according to the current vaporization state and a preset error threshold value.
  2. 2. The method of claim 1, wherein calculating the total pressure of the first gas, the first hydrogen flow rate, and the pipe temperature based on the preset operation liquid phase pre-determination algorithm to obtain the liquid phase possible value comprises: calculating the preset standard working condition pressure and the total pressure of the first gas according to a preset pressure fluctuation calculation formula to obtain a pressure fluctuation index; Collecting characteristic parameters of trichlorosilane; calculating the pipeline temperature and the trichlorosilane characteristic parameters according to a preset temperature fluctuation calculation formula to obtain a temperature fluctuation index; Calculating a first hydrogen flow and a preset hydrogen flow average value according to a preset flow fluctuation calculation formula to obtain a flow fluctuation index; And calculating the pressure fluctuation index, the temperature fluctuation index and the flow fluctuation index based on the operation liquid phase prejudgment algorithm so as to obtain a liquid phase possible value.
  3. 3. The method for controlling a gas phase apparatus according to claim 2, wherein the calculating the pipeline temperature and the trichlorosilane characteristic parameters according to a preset temperature fluctuation calculation formula to obtain the temperature fluctuation index comprises: Calculating characteristic parameters of trichlorosilane according to a preset An Tuoyin equation to obtain a saturation temperature; and calculating the preset reference temperature, the pipeline temperature and the saturation temperature according to a temperature fluctuation calculation formula so as to obtain a temperature fluctuation index.
  4. 4. The vapor device control method of claim 1, wherein generating vapor device passage control instructions based on a current vaporization state and a preset error threshold comprises: analyzing the current vaporization state; if the current vaporization state is the complete vaporization state, collecting the hydrogen flow to obtain a second hydrogen flow; Generating a gas phase device passage control instruction according to the second hydrogen flow, the preset trichlorosilane molar mass and the error threshold value.
  5. 5. The method of claim 4, wherein generating the vapor device passage control command based on the second hydrogen flow, the preset trichlorosilane molar mass, and the error threshold comprises: Calculating a second hydrogen flow according to a preset mass calculation formula and preset hydrogen density to obtain a trichlorosilane mass value and a mass ratio coefficient; calculating the molar mass and mass ratio coefficient of the trichlorosilane to obtain the gas phase mass of the trichlorosilane; Performing difference calculation on the trichlorosilane quality value and the trichlorosilane gas phase quality to obtain an error value; Judging whether the error value is smaller than an error threshold value or not; and if the error value is smaller than the error threshold value, generating a gas phase device passage control instruction.
  6. 6. The method for controlling a gas phase apparatus according to claim 5, wherein calculating the second hydrogen flow rate according to the preset mass calculation formula and the preset hydrogen density to obtain the trichlorosilane mass value and the mass ratio coefficient comprises: Calculating the second hydrogen flow according to a mass calculation formula to obtain a trichlorosilane quality value; Converting the second hydrogen flow according to the hydrogen density to obtain the hydrogen quality; and calculating the ratio of the mass of the trichlorosilane to the mass of the hydrogen to obtain a mass ratio coefficient.
  7. 7. The method for controlling a gas phase apparatus according to claim 5, wherein the calculating of the molar mass and the mass ratio coefficient of trichlorosilane to obtain the gas phase mass of trichlorosilane comprises: analyzing the mass ratio coefficient based on a preset Dalton partial pressure law to obtain saturated vapor pressure; collecting the total pressure of the current gas to obtain the total pressure of the second gas; calculating the saturated vapor pressure and the total pressure of the second gas according to the Dalton partial pressure law to obtain the amount of gas phase trichlorosilane substances; the molar mass of trichlorosilane and the amount of gas phase trichlorosilane material are calculated to obtain the gas phase mass of trichlorosilane.
  8. 8. A gas phase apparatus, comprising: The first data acquisition module is used for acquiring the current total gas pressure and the current hydrogen flow so as to obtain the first total gas pressure and the first hydrogen flow; the second data acquisition module is used for acquiring the temperature of the pipeline; the calculation module is used for calculating the total pressure of the first gas, the first hydrogen flow and the pipeline temperature based on a preset operation liquid phase pre-judging algorithm so as to obtain a liquid phase possible value; the judging module is used for judging whether the liquid phase possible value is larger than a preset possibility threshold value or not; the instruction generation module is used for generating a gas-phase device bypass control instruction if the liquid-phase possible value is larger than the possibility threshold value; the state module is used for acquiring the current vaporization state in the bypass working state; And the control module is used for generating a gas phase device passage control instruction according to the current vaporization state and a preset error threshold value.
  9. 9. The gas phase device control equipment is characterized by comprising a memory and at least one processor, wherein the memory stores instructions; at least one of the processors invokes the instructions in the memory to cause the one vapor device control apparatus to perform the steps of one vapor device control method of any one of claims 1-7.
  10. 10. A computer readable storage medium having instructions stored thereon, which when executed by a processor, perform the steps of a gas phase apparatus control method according to any one of claims 1-7.

Description

Gas phase device control method, device, equipment and storage medium Technical Field The present invention relates to the field of gas phase apparatus control technologies, and in particular, to a gas phase apparatus control method, apparatus, device, and storage medium. Background In trichlorosilane vaporization conveying and gas-phase process systems, the stability of raw material conveying and medium phase state directly influence the quality and equipment safety of subsequent processes. The traditional control mode adopts a single temperature or pressure threshold value to simply judge, is difficult to comprehensively reflect the liquid phase generation risk under the multi-factor coupling effects of flow fluctuation, pressure change, temperature deviation and the like, and is easy to cause the problems of liquid phase pre-judging hysteresis, insufficient recognition precision and the like. Meanwhile, the lack of verification on the vaporization state easily causes the phenomena of abnormal pressure control, pipeline blockage, even equipment damage and the like when materials which are not completely vaporized enter a pressure control and other precise systems, the prior art cannot realize multi-dimensional parameter fusion pre-judgment and self-adaptive vaporization control, and the requirements of efficient, stable and safe continuous production are difficult to meet. Disclosure of Invention In order to overcome the defects in the prior art, the invention aims to provide a gas phase device control method, a device, equipment and a storage medium. A gas phase device control method includes the steps of collecting current total gas pressure and hydrogen flow to obtain first total gas pressure and first hydrogen flow, collecting pipeline temperature, calculating the first total gas pressure, the first hydrogen flow and the pipeline temperature based on a preset operation liquid phase pre-judging algorithm to obtain a liquid phase possible value, judging whether the liquid phase possible value is larger than a preset possibility threshold value, generating a gas phase device bypass control instruction if the liquid phase possible value is larger than the possibility threshold value, acquiring the current vaporization state in a bypass working state, and generating the gas phase device passage control instruction according to the current vaporization state and the preset error threshold value. Further, the method comprises the steps of calculating the total pressure of the first gas, the first hydrogen flow and the temperature of the pipeline based on a preset operation liquid phase pre-judging algorithm to obtain a liquid phase possible value, calculating the preset standard working condition pressure and the total pressure of the first gas according to a preset pressure fluctuation calculating formula to obtain a pressure fluctuation index, collecting trichlorosilane characteristic parameters, calculating the temperature of the pipeline and the trichlorosilane characteristic parameters according to a preset temperature fluctuation calculating formula to obtain a temperature fluctuation index, calculating the first hydrogen flow and a preset hydrogen flow average value according to a preset flow fluctuation calculating formula to obtain a flow fluctuation index, and calculating the pressure fluctuation index, the temperature fluctuation index and the flow fluctuation index based on the operation liquid phase pre-judging algorithm to obtain the liquid phase possible value. Further, the method for calculating the pipeline temperature and the trichlorosilane characteristic parameters according to the preset temperature fluctuation calculation formula to obtain the temperature fluctuation index comprises the steps of calculating the trichlorosilane characteristic parameters according to the preset An Tuoyin equation to obtain the saturated temperature, and calculating the preset reference temperature, the pipeline temperature and the saturated temperature according to the temperature fluctuation calculation formula to obtain the temperature fluctuation index. Further, the generation of the gas phase device path control instruction according to the current vaporization state and the preset error threshold value comprises the steps of analyzing the current vaporization state, collecting the hydrogen flow if the current vaporization state is the complete vaporization state to obtain a second hydrogen flow, and generating the gas phase device path control instruction according to the second hydrogen flow, the preset trichlorosilane molar mass and the error threshold value. Further, the gas phase device path control instruction is generated according to the second hydrogen flow, the preset trichlorosilane molar mass and the error threshold value, and comprises the steps of calculating the second hydrogen flow according to a preset mass calculation formula and the preset hydrogen density to obtain a trichlorosilan