Search

CN-121994724-A - In-situ monitoring method, system and in-situ monitoring device for solution method film preparation process

CN121994724ACN 121994724 ACN121994724 ACN 121994724ACN-121994724-A

Abstract

The application provides an in-situ monitoring method, an in-situ monitoring system and an in-situ monitoring device for a solution method film preparation process, which relate to the technical field of semiconductor detection and are used for acquiring multi-sequence data comprising an image sequence, a reflection spectrum sequence and an interference signal sequence on the surface of a wafer to be detected; the method comprises the steps of processing a reflection spectrum sequence to obtain a spectrum unmixing result, carrying out constraint solving on the spectrum unmixing result based on an interference signal sequence to obtain a volume fraction change curve, calculating process parameters based on the volume fraction change curve, and generating a spatial distribution diagram. According to the method, the image information, the spectrum information and the interference information are synchronously acquired and jointly analyzed, so that the collaborative monitoring of chemical evolution, physical thickness change and spatial distribution characteristics in the preparation process of the film by the solution method is realized, the problems that the information dimension is single, the decoupling sub-process is difficult to decouple and the dynamic rule of the whole preparation process is difficult to accurately reflect in the traditional technology are effectively solved, and the monitoring precision of the preparation process of the film by the solution method is improved.

Inventors

  • LIU XINYANG

Assignees

  • 上海车仪田科技有限公司

Dates

Publication Date
20260508
Application Date
20260410

Claims (10)

  1. 1. An in-situ monitoring method for a solution process film preparation process, the method comprising: Acquiring multi-sequence data generated based on a measuring light source under the same time reference in the preparation process of at least one target area on the surface of a wafer to be detected, wherein the measuring light source comprises an imaging illumination light source, a white light broadband light source and a laser interference light source, the multi-sequence data comprises an image sequence, a reflection spectrum sequence and an interference signal sequence, and the multi-sequence data is generated based on that the measuring light source shares at least part of an optical path and focuses on the corresponding target area; processing the reflection spectrum sequence by adopting a signal decoupling algorithm to obtain a spectrum unmixing result, wherein the spectrum unmixing result comprises a single component spectrum in a plurality of components and a concentration change curve corresponding to the single component spectrum; performing constraint solving on the spectrum unmixing result based on the interference signal sequence to obtain a volume fraction change curve of the target region preparation process; and calculating technological parameters based on the volume fraction change curve, establishing spatial correlation between the technological parameters and the image sequence, and generating a spatial distribution map.
  2. 2. The method according to claim 1, wherein the method further comprises: Performing space-time registration and preprocessing on the acquired multi-sequence data, and then performing signal decoupling algorithm processing; the space-time registration method comprises the steps of carrying out time axis alignment on the multi-sequence data, and establishing a space corresponding relation among a reflection spectrum measurement micro-area, an interference measurement point and an image pixel position based on a common light path design; The preprocessing mode comprises at least one of image clipping, denoising, spectrum baseline correction and thickness filtering.
  3. 3. The method of claim 1, wherein processing the reflectance spectrum sequence using a signal decoupling algorithm results in a spectral unmixed result, comprising: constructing the reflection spectrum sequence into a spectrum data matrix according to the time dimension and the wavelength dimension; initializing the spectrum data matrix based on a preset group fraction and an initial single-component spectrum of each target component; the method comprises the steps of calculating the concentration value of each target component at each sampling moment when a single component spectrum is fixed, and updating the single component spectrum of each target component when the concentration value of each target component is fixed; and taking a single component spectrum corresponding to each component when the preset convergence condition is reached and a concentration change curve of each component changing along with time as a spectrum unmixing result.
  4. 4. The method according to claim 1, wherein the performing constraint solving on the spectral unmixed result based on the interference signal sequence to obtain a volume fraction change curve of the target region preparation process includes: And extracting thickness variation information of the target region based on the interference signal sequence, and carrying out constraint solving on the spectrum unmixing result based on the thickness variation information to obtain a volume fraction variation curve of the target region in the preparation process, wherein the thickness variation information comprises at least one of thickness value, thickness variation and thickness variation rate of the target region at each sampling moment.
  5. 5. The method according to claim 4, wherein the performing constraint solving on the spectral unmixed result based on the thickness variation information to obtain a volume fraction variation curve of the target area preparation process includes: Establishing a functional relation between a concentration change curve of each component and the volume fraction of each component in the spectrum unmixing result; constructing a joint objective function of the target area based on the thickness variation information and the functional relation; The concentration profile of each component is calibrated to a volume fraction profile under the constraint of the combined objective function.
  6. 6. The method of claim 1, wherein the process parameters include precursor solvent evaporation rate, crystal growth rate, nucleation time, and phase change completion time; The calculating the process parameter based on the volume fraction change curve, establishing the spatial correlation between the process parameter and the image sequence, and generating a spatial distribution map comprises the following steps: Performing differential processing on the volume fraction change curve of each component to obtain change rate parameters of each target region in the preparation process, and determining characteristic time parameters of each target region in the preparation process based on a differential processing result and/or the volume fraction change curve, wherein the change rate parameters comprise precursor solvent volatilization rate and crystallization growth rate, and the characteristic time parameters comprise nucleation time and phase change completion time; mapping the technological parameters corresponding to each target region to the corresponding position in the image sequence according to the spatial position of each target region in the image sequence; And generating a spatial distribution diagram representing the spatial difference of the preparation process of the wafer surface to be tested based on the mapped process parameters.
  7. 7. An in situ monitoring system for a solution process film preparation process, the system comprising: The acquisition module is used for generating multi-sequence data based on a measuring light source under the same time reference in the preparation process of at least one target area of the surface of the wafer to be detected, wherein the measuring light source comprises an imaging illumination light source, a white light broadband light source and a laser interference light source, the multi-sequence data comprises an image sequence, a reflection spectrum sequence and an interference signal sequence, and the multi-sequence data is generated by focusing on the corresponding target area after sharing at least part of optical paths by the measuring light source; The processing module is used for processing the reflection spectrum sequence by adopting a signal decoupling algorithm to obtain a spectrum unmixing result, wherein the spectrum unmixing result comprises a single component spectrum in a plurality of components and a concentration change curve corresponding to the single component spectrum, carrying out constraint solving on the spectrum unmixing result based on the interference signal sequence to obtain a volume fraction change curve of the preparation process of the target area, calculating technological parameters based on the volume fraction change curve, and establishing spatial correlation between the technological parameters and the image sequence to generate a spatial distribution diagram.
  8. 8. An in situ monitoring device, the device comprising: the integrated optical probe module is arranged above the film preparation equipment and is used for providing a measuring light source, focusing the measuring light source to a target area on the surface of a wafer to be measured after sharing at least part of optical paths, and acquiring original data generated by the target area based on the measuring light source, wherein the measuring light source comprises an imaging illumination light source, a white light broadband light source and a laser interference light source; The data acquisition module is used for acquiring the original data under the same time reference to obtain multi-sequence data, wherein the multi-sequence data comprises an image sequence, a reflection spectrum sequence and an interference signal sequence; an in situ monitoring system of a solution film forming process as claimed in claim 7 for processing said multi-sequence data and generating a spatial profile.
  9. 9. The apparatus of claim 8, wherein the integrated optical probe module comprises: An imaging unit comprising an imaging illumination source and a camera for illuminating and imaging the target region to obtain image data characterizing a macroscopic spatiotemporal evolution of the target region; The micro-spectrum unit comprises a white light broadband light source and an optical fiber spectrometer, and is used for providing wide-spectrum measuring light for the target area and collecting reflection spectrum data corresponding to the target area; The laser interference unit comprises a laser interference light source and an interferometer, and is used for providing interference measurement light for the target area and acquiring interference signal data representing thickness change of the target area; And the coaxial objective lens is used for coaxially integrating at least part of the common optical paths corresponding to the imaging unit, the micro spectrum unit and the laser interference unit and focusing corresponding measuring light to the same target area on the surface of the wafer to be measured.
  10. 10. The apparatus of claim 8, wherein the apparatus further comprises: The integrated optical probe module is arranged in the sealed shell; the sealing shell is provided with an annular air curtain outlet which is used for spraying inert gas to the outer surface of the probe optical window to form a protective air curtain so as to reduce pollution of solvent vapor to the optical window.

Description

In-situ monitoring method, system and in-situ monitoring device for solution method film preparation process Technical Field The application relates to the technical field of semiconductor detection, in particular to an in-situ monitoring method, an in-situ monitoring system and an in-situ monitoring device for a solution method film preparation process. Background In-situ monitoring refers to a technique for real-time, continuous and non-invasive measurement of key physical and chemical parameters in the real environment and dynamic process of material preparation or reaction. Compared with the method of depending on the end point analysis mode of detection after preparation, the in-situ monitoring technology can directly acquire dynamic evolution information in the material forming process, thereby providing basis for process mechanism research, parameter optimization and process control. In the field of advanced electronic material and photoelectronic material preparation, especially in the preparation process of novel soft material films processed by adopting a solution method, such as perovskite materials, organic semiconductor materials and the like, the films are converted from liquid precursors to solid functional film layers, and the coupling evolution of various physical and chemical processes, such as solvent volatilization, nucleation, grain growth, phase change, film thickness shrinkage and the like, is usually accompanied. The process not only directly affects the crystallization quality, the phase purity, the defect density and the uniformity of the film, but also further determines the photoelectric performance and the stability of the device. Therefore, how to obtain the key process parameters related to film forming dynamics in real time in the film preparation process of the solution method has become a key problem for realizing controllable preparation and industrialization application in the field. In the conventional technology, a single optical sensor is generally adopted to monitor the film forming process on line, an in-situ monitoring system developed for the vapor deposition process is adopted to detect the preparation process in real time, and the film structure and performance are analyzed through an off-line characterization means after the film forming is completed. The method can obtain the thickness, morphology or structure information of the film to a certain extent, but has obvious defects that the dimension of single optical monitoring information is limited, the coupling sub-processes such as solvent volatilization, crystallization and phase change are difficult to distinguish, a vapor deposition monitoring system is mainly designed aiming at high temperature, vacuum or inert environment, the vapor deposition monitoring system is difficult to adapt to application scenes with high normal pressure, organic vapor and pollution risks in a solution method process, and offline characterization can only obtain end point results after preparation and cannot reflect dynamic evolution rules in a film forming process. Therefore, the prior art is difficult to meet the requirement of synchronously acquiring multidimensional information and analyzing the dynamic process in real time in the preparation process of the film by the solution method. In view of this, there is a need in the art for an in-situ monitoring method and system suitable for a solution film preparation environment, capable of synchronously acquiring multidimensional raw data in the same target area and performing joint analysis on chemical evolution and physical changes in a film forming process, so as to realize real-time and accurate monitoring of key kinetic parameters in the solution film preparation process. Disclosure of Invention The application aims to provide an in-situ monitoring method, an in-situ monitoring system and an in-situ monitoring device for a solution method film preparation process, so as to overcome the defects that in the traditional technology, multidimensional process information is difficult to synchronously obtain, film forming dynamics are difficult to accurately analyze, and in-situ real-time monitoring of the whole process cannot be realized. In a first aspect, the present application provides an in-situ monitoring method for a solution film preparation process, including: Acquiring multi-sequence data generated based on a measuring light source under the same time reference in the preparation process of at least one target area on the surface of a wafer to be detected, wherein the measuring light source comprises an imaging illumination light source, a white light broadband light source and a laser interference light source, the multi-sequence data comprises an image sequence, a reflection spectrum sequence and an interference signal sequence, and the multi-sequence data is generated based on that the measuring light source shares at least part of an optical path and focuses on the c