CN-121994845-A - Electron beam detection electron microscope, related equipment module and electron beam scanning imaging method

CN121994845ACN 121994845 ACN121994845 ACN 121994845ACN-121994845-A

Abstract

The application provides an electron beam detection electron microscope, a related equipment module and an electron beam scanning imaging method. In the electron beam detection electron microscope, the electron emission module emits electron beams to a sample to be detected, and the detector module comprises a transmission detection unit and a non-transmission detection unit. The non-transmission detection unit is arranged between the electron emission module and the bearing surface of the sample bearing platform, detects non-transmission signal electrons generated when the electron beam focuses and scans the sample to be detected, and outputs a non-transmission detection signal. The transmission detection unit is arranged on one side of the back side surface of the sample bearing platform, detects and collects signal electrons of a transmission diffraction image generated by focusing, transmitting and scanning the sample to be detected by the electron beam, outputs a four-dimensional transmission detection signal, and the electron beam detection control equipment forms a scanning image according to the non-transmission detection signal and the four-dimensional transmission detection signal, so that the detection efficiency of the material characterization of the sample to be detected is effectively improved.

Inventors

XU LINGYI
CAO SHAOHONG
KONG YUNCHUAN
YANG CHANGJIN
TIAN YANGYANG

Assignees

华为技术有限公司

Dates

Publication Date: 20260508
Application Date: 20241101

Claims (14)

1. An electron beam probe electron microscope, comprising: an electron emission module for emitting electron beams; The sample bearing platform comprises a bearing surface and a back side surface which are oppositely arranged, wherein the bearing surface is opposite to the electron emission module and is used for placing the sample to be tested; The detector module comprises a transmission detection unit and a non-transmission detection unit, wherein: The non-transmission detection unit is arranged between the electron emission module and the bearing surface and is used for detecting non-transmission signal electrons generated when the electron beam is focused and scanned to the sample to be detected and correspondingly outputting a non-transmission detection signal; The transmission detection unit is arranged on one side of the back side surface and is used for detecting and collecting signal electrons of a transmission diffraction image generated by the electron beam focusing transmission scanning of the sample to be detected and correspondingly outputting four-dimensional transmission detection signals.
2. The electron beam detecting electron microscope of claim 1, wherein the non-transmission detection unit comprises at least one of a back-scattered electron detection unit, a secondary electron detection unit, and an in-lens detection unit; the back scattering electron detection unit is used for detecting and collecting back scattering electrons generated when the electron beam is focused and scanned to the sample to be detected and outputting back scattering signals; The secondary electron detection unit is used for detecting and collecting secondary electrons generated by the electron beam focusing scanning of the sample to be detected along a first angle and outputting secondary electron signals; The in-lens detection unit is used for detecting and collecting characteristic X-rays or secondary electrons generated when the electron beam is focused and scanned to the sample to be detected along a second angle and outputting an in-lens detection signal; The transmission detection unit comprises a four-dimensional detection unit, and is used for detecting and collecting signal electrons of the transmission diffraction image and correspondingly outputting the four-dimensional transmission detection signal.
3. The electron beam probe electron microscope of claim 2, wherein the electron microscope module further comprises a first control input interface, a first acquisition output interface, a second acquisition output interface, a third acquisition output interface, and a fourth acquisition output interface, The first control input interface is used for receiving indication information, the indication information at least comprises a scanning signal and a sampling signal, the scanning signal is used for controlling the electron emission module to emit the electron beam to scan the sample to be tested in a transmission mode, the sampling signal is used for controlling the detector module to collect signal electrons emitted from the sample to be tested corresponding to the scanning of the electron beam, the signal electrons comprise transmission diffraction images, and at least one of the back scattering electrons, the secondary electrons and the characteristic X rays; The back scattering electronic detection unit is connected to the first acquisition output interface and outputs the back scattering signal from the first acquisition output interface, the secondary electron detection unit is connected to the second acquisition output interface and outputs the secondary electron signal from the second acquisition output interface, the in-lens detection unit is connected to the third acquisition output interface and outputs the in-lens detection signal from the third acquisition output interface, and the four-dimensional detection unit is connected to the fourth acquisition output interface and outputs the four-dimensional transmission detection signal from the fourth acquisition output interface.
4. The electron beam probe electron microscope according to claim 2, wherein, The back scattering electron detection unit, the secondary electron detection unit and the in-lens detection unit collect the signal electrons according to a first sampling signal in the sampling signals and a first sampling rate, and correspondingly output the back scattering signals, the secondary electron signals and the in-lens detection signals; The four-dimensional detection unit acquires the signal electrons according to a second sampling signal in the sampling signals and a second sampling rate, and correspondingly outputs the four-dimensional transmission detection signals; The frequency of the first sampling signal is less than the frequency of the second sampling signal, and the second sampling rate is greater than the first sampling rate.
5. An electron beam detection control device is characterized by comprising a detection execution module and a detection control module, wherein, The detection execution module is used for connecting the electron beam detection electron microscope of any one of claims 1-4, receiving the non-transmission detection signal and the four-dimensional transmission detection signal from the electron beam detection electron microscope, and respectively executing conversion processing on the non-transmission detection signal and the four-dimensional transmission detection signal to obtain detection acquisition signals; The detection control module is connected with the detection control module, receives the detection acquisition data and forms a scanning image according to the detection acquisition data, wherein the scanning image comprises a four-dimensional transmission scanning image corresponding to the thinking transmission detection signal and a non-transmission scanning image corresponding to the non-transmission detection signal.
6. The electron beam detection control apparatus according to claim 5, wherein the detection execution module includes a processing unit, a signal output unit, a first data conversion processing unit, and a second data conversion processing unit; The processing unit is connected with the detection control module through a first execution signal transmission interface, so as to receive a control signal from the detection control module and output an execution control signal according to the control signal, wherein the control signal is used for representing and controlling the working state of the electron beam detection electron microscope according to any one of claims 1-4; The signal output unit is connected with the processing unit and the first control output interface, the first control interface is used for connecting the electron beam detection electron microscope according to any one of claims 1-4, the indication information is output from the first control output interface according to the execution control signal, the indication information comprises a scanning signal and a sampling signal, the scanning signal is used for controlling the electron beam detection electron microscope to scan the sample to be detected in an electron beam transmission mode, and the sampling signal is used for controlling the electron beam detection electron microscope to acquire the signal electrons emitted from the sample to be detected; The first data conversion processing unit is used for receiving the non-transmission detection signal from the non-transmission detection unit, processing the non-transmission detection signal into detection acquisition data, and transmitting the detection acquisition data from the first execution signal transmission interface to the detection control module; The second data conversion processing unit is used for receiving the four-dimensional transmission detection signal from the transmission detection unit, processing the four-dimensional transmission detection signal into detection acquisition data and transmitting the detection acquisition data from a second first execution signal transmission interface to the detection control module; Wherein the first execution signal transmission interface and the second execution signal transmission interface are different in data transmission type.
7. The electron beam detection control device of claim 6, wherein the detection control module comprises a control application, a first control signal transmission interface for receiving detection acquisition data corresponding to the non-transmission detection signal, and a second control signal transmission interface for receiving detection acquisition data corresponding to the four-dimensional transmission detection data; The control application is used for outputting the control signal according to an instruction input by a user and forming the scanning image according to the detection acquisition data, wherein the non-transmission scanning image comprises at least one of a back scattering electron scanning image, a secondary electron scanning image and an intra-lens detection scanning image; The back scattering electron scanning image is an image formed according to back scattering signals corresponding to back scattering electrons generated when the electron beam focuses and scans the sample to be detected; The secondary electron scanning image is an image formed by secondary electron signals corresponding to secondary electrons generated by the electron beam focusing scanning of the sample to be detected; The in-lens detection scanning image is an image formed by a in-lens detection signal corresponding to characteristic X-rays or secondary electrons generated when the electron beam focuses and scans the sample to be detected.
8. The detection execution module is characterized by comprising a processing unit, a signal output unit, a first data conversion processing unit and a second data conversion processing unit; the processing unit is used for receiving a control signal through the first execution signal transmission interface, and the control signal characterizes and controls the working state of the electron beam detection electron microscope according to any one of claims 1 to 4; The signal output unit is connected with the processing unit and the first control output interface, the first control interface is used for connecting the electron beam detection electron microscope according to any one of claims 1-4, the signal output unit is used for outputting indication information from the first control output interface under the control of the processing unit according to the control signal, the indication information at least comprises a scanning signal and a sampling signal, the scanning signal is used for controlling the electron beam detection electron microscope to scan the sample to be detected in an electron beam transmission mode, and the sampling signal is used for controlling the electron beam detection electron microscope to acquire the signal electrons emitted from the sample to be detected corresponding to the scanning of the electron beam; the first data conversion processing unit is used for receiving the non-transmission detection signal from the non-transmission detection unit and processing the non-transmission detection signal into detection acquisition data; the second data conversion processing unit is used for receiving the four-dimensional transmission detection signals from the transmission detection unit and processing the four-dimensional transmission detection signals into detection acquisition data.
9. The probe execution module of claim 8, wherein, The first data conversion processing unit is connected with the first acquisition input interface, the second acquisition input interface and the third acquisition input interface, The first acquisition input interface is used for receiving a back scattering signal corresponding to back scattering electrons generated when the electron beam is focused and scanned to the sample to be detected; the second acquisition input interface is used for receiving a secondary electron signal corresponding to secondary electrons generated by the electron beam focusing scanning of the sample to be detected, The third acquisition input interface is used for receiving a detection signal in the lens corresponding to characteristic X-rays or secondary electrons generated when the electron beam focuses and scans the sample to be detected, The first data conversion processing unit is used for processing at least one of the back scattering signal, the secondary electron signal and the in-lens detection signal to acquire data for detection; The second data conversion processing unit is connected with a fourth acquisition input interface, the fourth acquisition input interface is used for receiving four-dimensional transmission detection signals, and the second data conversion processing unit is used for processing the four-dimensional projection detection signals into detection acquisition data.
10. The probe execution module of claim 9, wherein, The first data conversion processing unit is also connected with the first execution signal transmission interface and outputs the detection signal through the first execution signal transmission interface; The detection execution module further comprises a second execution signal transmission interface, and the second data conversion processing unit is further connected to the second execution signal transmission interface and outputs the detection signal through the second execution signal transmission interface; the first execution signal transmission interface is different from the second execution signal transmission interface in data transmission type.
11. The probe execution module of claim 10, wherein: The first data conversion processing unit comprises a first conversion unit and a first buffer unit, the first conversion unit is connected with the first acquisition input interface, the second acquisition input interface and the third acquisition input interface and is used for executing analog-to-digital conversion processing on the non-transmission detection signals, the first buffer unit is connected with the first conversion unit and the first execution signal transmission interface, and the first buffer unit is used for buffering the non-transmission detection signals after the analog-to-digital conversion processing and forming detection acquisition data; the second data conversion processing unit comprises a second conversion unit and a second buffer unit, the second conversion unit is connected with the fourth acquisition input interface and is used for performing analog-to-digital conversion processing on the four-dimensional transmission detection signals, the second buffer unit is connected with the second conversion unit and the second execution signal transmission interface, and the second buffer unit is used for buffering the four-dimensional transmission detection signals after analog-to-digital conversion processing and forming detection acquisition data.
12. The probe execution module of any one of claims 10-11, wherein the first execution signal transmission interface is a USB interface and the second execution signal transmission interface is a PCI-E interface.
13. An electron beam scanning imaging method applied to the electron beam detecting electron microscope of any one of claims 1 to 4 and the electron beam detecting control apparatus of any one of claims 5 to 7, The detection control module receives an operation instruction and correspondingly sends a control signal to the detection execution module; the detection execution module outputs an indication signal according to a control signal to control the electron emission module to emit the electron beam, wherein the electron beam is used for executing transmission scanning on the sample to be detected; Collecting signal electrons emitted from a sample to be detected through the detector module and obtaining collected signals, wherein the signal electrons comprise signal electrons corresponding to a transmission diffraction image generated by focusing on the sample to be detected to perform transmission scanning and non-transmission signal electrons generated by focusing on the sample to be detected to perform scanning, the collected signals comprise four-dimensional transmission detection signals corresponding to the transmission diffraction image according to a second sampling rate, and non-transmission detection signals corresponding to the non-transmission signal electrons collected according to a first sampling rate, and the second sampling rate is larger than the first sampling rate; The detection control module receives the acquisition signals and forms a scanning image, and the scanning image comprises the scanning image formed according to the four-dimensional transmission detection signals and the non-transmission detection signals.
14. The electron beam scanning imaging method according to claim 13, wherein, The non-transmission detection signals comprise at least one of back scattering signals corresponding to back scattering electrons generated when the electron beam focuses and scans the sample to be detected, secondary electron signals corresponding to secondary electrons generated when the electron beam focuses and scans the sample to be detected, and intra-lens detection signals corresponding to characteristic X rays generated when the electron beam focuses and scans the sample to be detected; The detection execution module receives the non-transmission detection signal, performs analog-to-digital conversion and caching processing to obtain detection acquisition data, and transmits the detection acquisition data to the detection control module through the first signal transmission channel, and also receives the four-dimensional transmission detection signal, performs analog-to-digital conversion and caching processing to obtain detection acquisition data, and transmits the detection acquisition data to the control module through the second signal transmission channel.

Description

Electron beam detection electron microscope, related equipment module and electron beam scanning imaging method Technical Field The application relates to the technical field of electronic scanning, in particular to an electronic beam detection electron microscope, an electronic beam detection control device, a detection execution module and an electronic beam scanning imaging method. Background In the fabrication of semiconductor devices, it is desirable to inspect a material characterization of a wafer. By analyzing the material characterization of the wafer, the defects of the wafer can be obtained and the true origins of the defects can be determined. Charged particle microscopy, represented by electron microscopy, is widely used in the field of semiconductor material characterization detection. In scanning electron microscopy imaging, a scanning electron microscope (SEM, scanning electron microscope) uses a focused high-energy electron beam to scan a semiconductor sample to be measured, and through the interaction between the beam and the substance, various characteristic electrons, such as secondary electrons and back-scattered electrons, are excited, and these characteristic electrons are collected, amplified, and re-imaged to achieve the purpose of microscopic morphological characterization of the substance of the semiconductor sample. The transmission electron microscope (Transmission electron microscopy, TEM) performs transmission scanning on the semiconductor sample to be detected through the focused high-energy electrons and forms a four-dimensional (4D) scanning image, and the structure of the semiconductor sample to be detected on the nano scale can be obtained by combining imaging, diffraction, spectral analysis and the like, so that the method is also one of important means for representing microscopic materials of semiconductor devices. However, when a scanning electron microscope performs scanning, it is impossible to simultaneously transmit a semiconductor sample to be measured to obtain a four-dimensional scanning image, and when a transmission electron microscope performs transmission scanning, it is also impossible to acquire a corresponding scanning image with respect to secondary electrons, backscattered electrons, and the like. When the material characterization detection is carried out on the semiconductor sample to be detected, different electron microscopes are required to be adopted, so that the detection efficiency is low and the cost is high. Disclosure of Invention In order to solve the technical problems, the embodiment of the application provides an electron beam detection electron microscope, electron beam detection control equipment, a detection execution module and an electron beam scanning imaging method which are high in detection efficiency. In a first aspect, an embodiment of the application provides an electron beam detection electron microscope, which comprises an electron emission module, a sample bearing platform and a detector module, wherein the electron emission module is used for emitting electron beams, the sample bearing platform comprises a bearing surface and a back side surface which are oppositely arranged, the bearing surface faces the electron emission module and is used for placing a sample to be detected, and the detector module comprises a transmission detection unit and a non-transmission detection unit. The non-transmission detection unit is arranged between the electron emission module and the bearing surface and is used for detecting non-transmission signal electrons generated when the electron beam is focused and scanned to the sample to be detected and correspondingly outputting a non-transmission detection signal. The transmission detection unit is arranged on one side of the back side surface and is used for detecting and collecting signal electrons of a transmission diffraction image generated by the electron beam focusing transmission scanning of the sample to be detected and correspondingly outputting four-dimensional transmission detection signals. In an embodiment of the present application, the non-transmission detection unit includes at least one of a back-scattered electron detection unit, a secondary electron detection unit, and an in-lens detection unit. The back scattering electron detection unit is used for detecting and collecting back scattering electrons generated when the electron beam is focused and scanned to the sample to be detected and outputting back scattering signals. The secondary electron detection unit is used for detecting and collecting secondary electrons generated by the electron beam focusing scanning of the sample to be detected along a first angle and outputting secondary electron signals. The in-lens detection unit is used for detecting and collecting characteristic X-rays generated when the electron beam is focused and scanned to the sample to be detected along a second angle and outputting in-lens detect