CN-121995111-A - Wafer detector and wafer surface resistivity detection method

CN121995111ACN 121995111 ACN121995111 ACN 121995111ACN-121995111-A

Abstract

The application provides a wafer detector and a wafer surface resistivity detection method. Relates to the field of semiconductor wafer manufacturing and measurement. The wafer detector comprises a back plate, a source meter module, a probe array module and a thin film circuit module, wherein the source meter module is arranged on the back plate, the flexible substrate is arranged on one side of the back plate in a protruding mode, the probe array module is arranged on one side, far away from the back plate, of the flexible substrate, the probe array module comprises a plurality of probe units which are arranged in an array mode, the thin film circuit module is paved on the flexible substrate and is configured to electrically connect the plurality of probe units with the source meter module, the flexible substrate deforms under the action of external force under the condition that the back plate moves to a target position, the plurality of probe units are in electrical contact with a wafer to be detected, and the source meter module measures the resistivity of a plurality of points to be detected on the wafer to be detected through the plurality of probe units.

Inventors

HUANG XIAN
GAO FENGYUN
BAN YING
ZHANG QINGCHAO

Assignees

天津大学
天津万柔科技有限公司

Dates

Publication Date: 20260508
Application Date: 20260408

Claims (10)

1. A wafer detector, comprising: A back plate; The source table module is arranged on the backboard; the flexible substrate is convexly arranged on one side of the backboard; The probe array module is arranged on one side of the flexible substrate, which is far away from the back plate, and comprises a plurality of probe units which are arranged in an array manner; A thin film circuit module laid on the flexible substrate and configured to electrically connect a plurality of probe units and the source meter module; Under the condition that the backboard moves to the target position, the flexible substrate deforms under the action of external force, so that a plurality of probe units are in electrical contact with the wafer to be tested, and the source meter module measures the resistivity of a plurality of points to be tested on the wafer to be tested through the plurality of probe units.
2. The wafer detector according to claim 1, wherein: the probe unit comprises a first probe, a second probe, a third probe and a fourth probe; Under the condition that the backboard moves to a target position, a target probe unit in the plurality of probe units is in electrical contact with a target to-be-measured point in the plurality of to-be-measured points, the source meter module applies measurement current to the target to-be-measured point through a first probe and a second probe of the target probe unit, and acquires the voltage of the target to-be-measured point through a third probe and a fourth probe of the target probe unit, so that the source meter module determines the resistivity of the target to-be-measured point based on the measurement current and the voltage of the target to-be-measured point.
3. The wafer detector according to claim 2, wherein: The thin film circuit module comprises a first multiplexer, a second multiplexer, a third multiplexer and a fourth multiplexer; The input ends of the first multiplexer are respectively and electrically connected with the first probes of the probe units; the input ends of the second multiplexer are respectively and electrically connected with the second probes of the probe units; The input ends of the third multiplexer are respectively and electrically connected with the third probes of the probe units; A plurality of input ends of the fourth multiplexer are respectively and electrically connected with a fourth probe of each of the plurality of probe units; The output ends of the first multiplexer, the second multiplexer, the third multiplexer and the fourth multiplexer are electrically connected with the source table module.
4. A wafer detector according to claim 3, wherein: For any one of the first, second, third and fourth multiplexers, the multiplexer further comprises a gate that turns on an output of the multiplexer to one of a plurality of inputs of the multiplexer in dependence on the received control signal.
5. The wafer detector of claim 4, wherein the source table module comprises: the digital source table is electrically connected with the first multiplexer, the second multiplexer, the third multiplexer and the fourth multiplexer, and under the condition that the back plate moves to a target position, the digital source table releases measurement current at target to-be-measured points in the to-be-measured points through target probe units in the probe units and collects voltage of the target to-be-measured points so that the digital source table determines resistivity of the target to-be-measured points based on the measurement current and the voltage of the target to-be-measured points; And a controller electrically connected to each of the first multiplexer, the second multiplexer, the third multiplexer, and the fourth multiplexer, the controller configured to send control signals to the first multiplexer, the second multiplexer, the third multiplexer, and the fourth multiplexer, respectively.
6. The wafer detector of claim 1, wherein the material of the probe unit comprises one or more of nickel, gold titanium, or copper.
7. The wafer detector as set forth in claim 1 wherein the flexible substrate comprises: A first substrate layer laid on the back plate; The second substrate layer is arranged on one side, far away from the backboard, of the first substrate layer in a protruding mode, and the plurality of probe units are arranged on one side, far away from the first substrate layer, of the second substrate layer in a protruding mode.
8. The wafer detector of claim 1, further comprising: and the vertical driving module is connected with one side of the backboard away from the flexible substrate and is used for driving the backboard to move to a target position.
9. The wafer detector of claim 1, wherein the plurality of probe units are spaced apart on concentric circumferences.
10. A wafer surface resistivity detection method, applied to the wafer detector of any one of claims 1 to 9, comprising: responding to a resistivity acquisition instruction, and acquiring electrical characteristic data of a plurality of points to be detected on the wafer to be detected; generating a plurality of point position binary groups based on the position coordinates of the plurality of point positions to be detected and the electrical characteristic data; Extracting the association relation between the coordinate position of the wafer to be detected and the electrical characteristic data based on a plurality of point position binary groups through a convolution network and a self-attention mechanism to obtain association characteristics, and And predicting the resistivity of the target point location based on the correlation characteristic to obtain a resistivity prediction result.

Description

Wafer detector and wafer surface resistivity detection method Technical Field The present application relates to the field of semiconductor wafer fabrication and measurement, and more particularly, to a wafer detector and a wafer surface resistivity detection method. Background In thin film deposition, ion implantation and diffusion processes for manufacturing semiconductor wafers, full field resistivity maps of semiconductor wafers are a core means of assessing material uniformity and line yield. As semiconductor device feature sizes continue to shrink and wafer diameters continue to increase, higher demands are placed on the accuracy, speed, and non-destructive nature of resistivity measurements. In the related art, a semiconductor wafer still lacks an effective means for safely and quickly acquiring full-field resistivity maps before entering a subsequent photolithography process. Disclosure of Invention In view of this, the present application provides a wafer detector and a wafer surface resistivity detection method. The application provides a wafer detector which comprises a back plate, a source meter module, a flexible substrate, a probe array module and a film circuit module, wherein the source meter module is arranged on the back plate, the flexible substrate is arranged on one side of the back plate in a protruding mode, the probe array module is arranged on one side, far away from the back plate, of the flexible substrate, the probe array module comprises a plurality of probe units which are arranged in an array mode, the film circuit module is paved on the flexible substrate and is configured to electrically connect the plurality of probe units with the source meter module, the flexible substrate deforms under the action of external force under the condition that the back plate moves to a target position, the plurality of probe units are in electrical contact with a wafer to be detected, and the source meter module measures the resistivity of a plurality of points to be detected on the wafer to be detected through the plurality of probe units. According to the embodiment of the application, the probe unit comprises a first probe, a second probe, a third probe and a fourth probe, the target probe units in the plurality of probe units are in electrical contact with the target to-be-measured point positions in the plurality of to-be-measured point positions under the condition that the back plate moves to the target position, the source meter module applies measurement current to the target to-be-measured point positions through the first probe and the second probe of the target probe units, and the voltage of the target to-be-measured point positions is acquired through the third probe and the fourth probe of the target probe units, so that the source meter module determines the resistivity of the target to-be-measured point positions based on the measurement current and the voltage of the target to-be-measured point positions. According to the embodiment of the application, the thin film circuit module comprises a first multiplexer, a second multiplexer, a third multiplexer and a fourth multiplexer, wherein a plurality of input ends of the first multiplexer are respectively and electrically connected with first probes of a plurality of probe units, a plurality of input ends of the second multiplexer are respectively and electrically connected with second probes of the plurality of probe units, a plurality of input ends of the third multiplexer are respectively and electrically connected with third probes of the plurality of probe units, a plurality of input ends of the fourth multiplexer are respectively and electrically connected with fourth probes of the plurality of probe units, and output ends of the first multiplexer, the second multiplexer, the third multiplexer and the fourth multiplexer are respectively and electrically connected with the source table module. According to an embodiment of the present application, for any one of the first multiplexer, the second multiplexer, the third multiplexer, and the fourth multiplexer, the multiplexer further includes a gate terminal that turns on an output terminal of the multiplexer and one of a plurality of input terminals of the multiplexer according to the received control signal. According to the embodiment of the application, the source table module comprises a digital source table, a controller and a controller, wherein the digital source table is electrically connected with a first multiplexer, a second multiplexer, a third multiplexer and a fourth multiplexer, the digital source table releases measuring current at a target point to be measured in a plurality of point to be measured through a target probe unit in the plurality of probe units and collects voltage of the target point to be measured when the back plate moves to a target position, so that the digital source table determines resistivity of the target point to be measured based on