CN-121995114-A - Test structure, method, device, equipment and medium for measuring contact resistivity
Abstract
The application discloses a test structure, a method, a device, equipment and a medium for measuring contact resistivity, wherein the test structure comprises a substrate conductive layer, at least one first to-be-tested part and a corresponding second to-be-tested part, the first to-be-tested part and the second to-be-tested part are arranged on one side of the substrate conductive layer, the side surface of the first to-be-tested part and the side surface of the corresponding second to-be-tested part are electrically insulated, the second to-be-tested part at least partially surrounds the corresponding first to-be-tested part, and the first to-be-tested part and the second to-be-tested part both comprise at least one conductive material layer which is arranged in a laminated mode. The scheme provides a test structure capable of meeting the requirement of contact resistivity measurement.
Inventors
- ZHANG ZHICHENG
- WU ZHAOLIN
- ZHOU HONGMEI
- ZHOU ZICHUN
- Hong Wanru
- Request for anonymity
- OUYANG CHUYING
Assignees
- 宁德时代新能源科技股份有限公司
Dates
- Publication Date
- 20260508
- Application Date
- 20241107
Claims (19)
- 1. A test structure, the test structure comprising: A base conductive layer; The first to-be-tested part and the second to-be-tested part are arranged on one side of the substrate conductive layer, the side face of the first to-be-tested part and the side face of the corresponding second to-be-tested part are electrically insulated, the second to-be-tested part at least partially surrounds the corresponding first to-be-tested part, and the first to-be-tested part and the second to-be-tested part both comprise at least one conductive material layer which is arranged in a laminated mode.
- 2. The test structure of claim 1, further comprising at least one insulating portion, one insulating portion being located between one of the first test portions and the corresponding second test portion.
- 3. The test structure of claim 1, wherein the test structure is provided with at least one separation groove, and the base conductive layer, one of the first to-be-tested portions, and the corresponding second to-be-tested portion enclose one of the separation grooves.
- 4. A test structure according to claim 3, wherein the side of the base conductive layer provided with the first portion to be tested has at least one recess portion, the separation groove and the recess portion are correspondingly arranged, and the separation groove is communicated with the corresponding recess portion.
- 5. The test structure according to claim 3 or 4, wherein the separation grooves are annular grooves, one first portion to be tested is formed on the inner side of each separation groove, and the outer sides of all separation grooves in the test structure form the second portions to be tested corresponding to all first portions to be tested on the test structure.
- 6. The test structure of any one of claims 1 to 5, wherein a first predetermined multiple of a projected area of the first portion to be tested in the stacking direction is smaller than a corresponding projected area of the second portion to be tested in the stacking direction.
- 7. The test structure according to any one of claims 1 to 6, wherein a projection of the first portion to be tested in the stacking direction is a regular polygon or a circle.
- 8. The test structure of any one of claims 1 to 7, wherein a distance between a side of the first part under test and an opposite side of the corresponding second part under test is a part under test separation distance, and the second preset multiple of the part under test separation distance is less than a reference distance; When the projection of the first portion to be measured along the stacking direction is a regular polygon, the reference distance is the side length of the regular polygon, and when the projection of the first portion to be measured along the stacking direction is a circle, the reference distance is the radius of the circle.
- 9. The test structure of any one of claims 1 to 8, wherein the first and second portions to be tested comprise the same number of layers of conductive material, and the corresponding layers of conductive material in the first and second portions to be tested are the same in material and/or thickness.
- 10. A method of measuring contact resistivity, characterized in that the method is carried out on the basis of at least one test sample having a test structure according to any one of claims 1 to 9, the method comprising: Acquiring at least two measuring resistors, wherein different measuring resistors correspond to different projection areas of the first part to be measured along the stacking direction, and the measuring resistors represent the resistance between the first part to be measured and the corresponding second part to be measured; And determining the contact resistivity between the first to-be-measured part and the substrate conductive layer based on each measured resistance and the corresponding area related parameter of the first to-be-measured part.
- 11. The method of claim 10, wherein determining the contact resistivity between the first part under test and the base conductive layer based on each of the measured resistances and the corresponding area-related parameter of the first part under test comprises: Based on the area related parameters of the first to-be-measured parts, the measuring resistance and a plurality of mapping relations, calculating to obtain the contact resistivity between the first to-be-measured parts and the substrate conductive layer, wherein the plurality of mapping relations comprise a first mapping relation and a second mapping relation, the first mapping relation represents the relation between a plurality of sub-resistances on the conductive paths between the first to-be-measured parts and the corresponding second to-be-measured parts and the measuring resistance, the plurality of sub-resistances comprise the contact resistance of the first to-be-measured parts, and the second mapping relation represents the relation between the contact resistance of the first to-be-measured parts and the contact resistivity and the area related parameters.
- 12. The method of claim 11, wherein the step of determining the position of the probe is performed, The plurality of sub-resistors comprise the resistances of the substrate conductive layer between the first to-be-measured part and the corresponding second to-be-measured part, and the plurality of mapping relations further comprise a third mapping relation, wherein the third mapping relation characterizes the relation between the resistances of the substrate conductive layer and the area related parameters of the first to-be-measured part.
- 13. The method of claim 12, wherein the step of determining the position of the probe is performed, The first preset multiple of the projection area of the first to-be-measured part along the stacking direction is smaller than the corresponding projection area of the second to-be-measured part along the stacking direction; The plurality of sub-resistors are the contact resistance of the first to-be-measured part and the resistance of the base conductive layer between the first to-be-measured part and the corresponding second to-be-measured part, and the plurality of mapping relations are the first mapping relation, the second mapping relation and the third mapping relation.
- 14. The method according to any one of claims 11 to 13, wherein, The calculating, based on the area related parameters of the first to-be-measured portions, the measured resistances, and the mapping relationships, the contact resistivity between the first to-be-measured portions and the base conductive layer, includes: Obtaining a fourth mapping relation obtained by transforming the mapping relations, wherein the fourth mapping relation represents the relation between the measured resistance corresponding to the first part to be measured, the area related parameter of the first part to be measured and the contact resistivity; Substituting each measured resistance and the corresponding area related parameter into the fourth mapping relation, and fitting to obtain the contact resistivity.
- 15. The method of claim 14, wherein the step of providing the first information comprises, The distance between the side surface of the first part to be tested and the corresponding side surface of the second part to be tested is the interval distance of the part to be tested, and the second preset multiple of the interval distance of the part to be tested is smaller than the area related parameter; Substituting each measured resistance and the corresponding area related parameter into the fourth mapping relation, and fitting to obtain the contact resistivity, wherein the method comprises the following steps: constructing the fourth mapping relation into a linear equation, wherein independent variables and intercept of the linear equation are the area-related parameter and the contact resistivity respectively, and the dependent variables of the linear equation consist of the measured resistance and the area-related parameter; Substituting each measured resistance and the corresponding area related parameter into the linear equation to perform fitting, and obtaining the intercept of the linear equation.
- 16. The method of claim 15, wherein the projection of the first part to be measured in the stacking direction is square, and the area-related parameter is a side length of the square; And/or, the fourth mapping relation characterizes that the measured resistance is equal to the sum of a first ratio and a second ratio, the first ratio is the ratio between the contact resistivity and the cross-sectional area of the first portion to be measured, the cross-sectional area is determined based on the area related parameter, the second ratio is the ratio of a first product to a second product, the first product is the product of the resistivity of the substrate conductive layer and the interval distance of the portion to be measured, and the second product is the product of the transmission depth of the conductive path in the substrate conductive layer and the area related parameter of a plurality of times.
- 17. A device for measuring contact resistivity, characterized in that the device is realized on the basis of at least one test sample having a test structure according to any one of claims 1 to 9, the device comprising: the acquisition module is used for acquiring at least two measuring resistors, the different measuring resistors correspond to different projection areas of the first to-be-measured part along the stacking direction, and the measuring resistors represent the resistance between the first to-be-measured part and the corresponding second to-be-measured part; and the determining module is used for determining the contact resistivity between the first to-be-measured part and the substrate conductive layer based on each measured resistance and the corresponding area related parameter of the first to-be-measured part.
- 18. An electronic device comprising a memory and a processor, the memory having stored thereon program instructions that when executed by the processor implement the method of any of claims 10 to 16.
- 19. A computer readable storage medium having stored thereon program instructions, which when executed by a processor, implement the method of any of claims 10 to 16.
Description
Test structure, method, device, equipment and medium for measuring contact resistivity Technical Field The application relates to the field of material testing, in particular to a testing structure, a method, a device, equipment and a medium for measuring contact resistivity. Background The contact resistivity is an important parameter describing the contact resistance characteristics and can reflect the condition of the conductivity between two contacts. Contact resistivity is an important electrical property indicator. For example, contact resistivity is an important indicator that affects the Fill Factor (FF) in solar cell device parameters. Therefore, what structure can meet the need of contact resistivity measurement is a highly desirable problem. Disclosure of Invention The application provides at least one test structure, a method, a device, equipment and a medium for measuring contact resistivity. The application provides a test structure, which comprises a substrate conductive layer, at least one first to-be-tested part and a corresponding second to-be-tested part, wherein the first to-be-tested part and the second to-be-tested part are arranged on one side of the substrate conductive layer, the side surface of the first to-be-tested part and the side surface of the corresponding second to-be-tested part are electrically insulated, the second to-be-tested part at least partially surrounds the corresponding first to-be-tested part, and the first to-be-tested part and the second to-be-tested part both comprise at least one conductive material layer which is arranged in a laminated mode. In the scheme, the first to-be-tested part and the second to-be-tested part are arranged on the same side of the substrate conductive layer, the side surfaces of the first to-be-tested part and the second to-be-tested part are electrically insulated, the first to-be-tested part and the second to-be-tested part on the same side can be tested, and the contact resistivity measurement requirement can be met. In some embodiments, the test structure further comprises at least one insulating portion, one insulating portion being located between one first portion to be tested and the corresponding second portion to be tested. In the above scheme, the insulating part is arranged to realize the electrical insulation between the side surface of the first part to be tested and the side surface of the corresponding second part to be tested. In some embodiments, the test structure is provided with at least one separation groove, and the substrate conductive layer, a first portion to be tested and a corresponding second portion to be tested are surrounded to form one separation groove. In the above scheme, the separation groove is arranged to realize the electrical insulation between the side surface of the first part to be tested and the side surface of the corresponding second part to be tested. In some embodiments, at least one concave portion is formed on one side of the substrate conductive layer, where the first portion to be tested is disposed, the separation groove and the concave portion are disposed correspondingly, and the separation groove is communicated with the corresponding concave portion. In the scheme, the bottom of the separation groove can penetrate into the substrate conductive layer, so that the accuracy requirement on the depth of the separation groove is reduced, and the difficulty in manufacturing the sample with the test structure is reduced. In some embodiments, the separation grooves are annular grooves, a first part to be tested is formed on the inner side of each separation groove, and the outer sides of all the separation grooves in the test structure form second parts to be tested corresponding to all the first parts to be tested on the test structure. In the above scheme, the separation of the first to-be-measured part and the second to-be-measured part is realized by arranging the annular groove, and the first to-be-measured part is surrounded by the second to-be-measured part. In some embodiments, the first preset multiple of the projection area of the first portion to be tested along the stacking direction is smaller than the projection area of the corresponding second portion to be tested along the stacking direction. In the above scheme, the contact resistance of the second to-be-measured part is smaller than that of the first to-be-measured part, so that the contact resistance of the second to-be-measured part can be ignored in the process of the contact resistivity test, and the test of the contact resistivity can be simplified. In some embodiments, the projection of the first portion to be measured in the stacking direction is a regular polygon or a circle. In the scheme, the shape of the projection of the first to-be-measured part is set, so that the transverse flow of current in the first to-be-measured part is reduced, and the measurement accuracy of the contact resistivity is improved. I