CN-121995146-A - Method for detecting electrostatic tolerance of smart card

CN121995146ACN 121995146 ACN121995146 ACN 121995146ACN-121995146-A

Abstract

The application relates to the technical field of intelligent card performance detection, and discloses an electrostatic tolerance detection method of an intelligent card. The static tolerance detection method of the smart card comprises the steps of obtaining a plurality of smart card semi-finished products of the smart card to be detected, wherein the smart card semi-finished products comprise a chip, a first substrate layer, a second substrate layer and a third substrate layer, the chip is integrated on the first substrate layer, the second substrate layer and the third substrate layer are positioned on two opposite surfaces of the first substrate layer and are not pressed, static simulation of lamination scenes is conducted on each smart card semi-finished product through discharging to the smart card semi-finished products, the second substrate layer and the third substrate layer of the smart card semi-finished product which is subjected to static simulation are peeled, performance detection is conducted on each smart card semi-finished product which is subjected to peeling, performance detection data are obtained, and static tolerance detection results of the smart card to be detected in batches are determined based on the performance detection data. According to the static electricity tolerance detection method, the accuracy of the static electricity tolerance detection result can be improved.

Inventors

WANG FENG
WANG YANBIN

Assignees

北京中电华大电子设计有限责任公司

Dates

Publication Date: 20260508
Application Date: 20260228

Claims (11)

1. A method for detecting electrostatic tolerance of a smart card, comprising: Obtaining a plurality of smart card semi-finished products of a smart card batch to be tested, wherein the smart card semi-finished products comprise a chip, a first substrate layer, a second substrate layer and a third substrate layer, the chip is integrated on the first substrate layer, and the second substrate layer and the third substrate layer are positioned on two opposite surfaces of the first substrate layer and are not pressed; performing electrostatic simulation of a lamination scene on each smart card semi-finished product by discharging to the smart card semi-finished product; Stripping the second substrate layer and the third substrate layer of the smart card semi-finished product subjected to electrostatic simulation; Performing performance detection on each smart card semi-finished product subjected to stripping to obtain performance detection data; and determining the electrostatic tolerance detection result of the smart card of the batch to be detected based on the performance detection data.
2. The method for detecting electrostatic tolerance of a smart card according to claim 1, wherein the electrostatic simulation of a lamination scene for each of the smart card semi-finished products by discharging to the smart card semi-finished product comprises: Discharging the smart card semi-finished product in a human body discharging mode to perform electrostatic simulation of superposition friction in a lamination scene on the smart card semi-finished product; discharging the smart card semi-finished product in a machine discharging mode to perform electrostatic simulation of pressurized contact in a lamination scene on the smart card semi-finished product.
3. The method for detecting electrostatic tolerance of a smart card according to claim 1, wherein the electrostatic simulation of a lamination scene for each of the smart card semi-finished products by discharging to the smart card semi-finished product comprises: Sequentially numbering a plurality of smart card semi-finished products; and carrying out electrostatic simulation of a lamination scene on each smart card semi-finished product through discharging, wherein the discharging voltage conditions matched with the smart card semi-finished products with different numbers are different.
4. A method for detecting electrostatic resistance of a smart card according to claim 3, wherein said electrostatic simulation of a lamination scene by discharging each of said smart card semi-finished products comprises: And sequentially performing human body discharge mode discharge and machine discharge mode discharge on each smart card semi-finished product according to the ascending sequence of numbers, wherein the discharge voltage of the smart card semi-finished product with the first number in the corresponding human body discharge mode is 2000V, the discharge voltage of the smart card semi-finished product with the first number in the corresponding machine discharge mode is 1000V, the discharge voltage of the smart card semi-finished product with the last number in the corresponding human body discharge mode is increased by at least one voltage level, and/or the discharge voltage of the smart card semi-finished product with the first number in the corresponding machine discharge mode is increased by at least one voltage level, wherein each voltage level in the human body discharge mode is 500V, and each voltage level in the machine discharge mode is 1000V.
5. The method for detecting electrostatic tolerance of a smart card according to claim 4, wherein the performing the human body discharge mode discharge includes: And discharging the area where the chip of the smart card semi-finished product is positioned for three times in a human body discharging mode.
6. The method for detecting electrostatic tolerance of a smart card according to claim 4, wherein the performing the machine discharge mode discharge includes: And sequentially discharging each pin welding spot of the chip of the smart card semi-finished product once in a machine discharging mode, wherein the discharging interval is 10s.
7. The method for detecting electrostatic resistance of a smart card according to claim 4, wherein said performing performance detection on each of said smart card semi-finished products after finishing peeling to obtain performance detection data comprises: performing first electrical property detection on the smart card semi-finished product, and ending the performance test if the first electrical property detection is not passed; Performing physical structure detection on the smart card semi-finished product detected through the first electrical property, and ending the performance test if the smart card semi-finished product does not pass the physical structure detection; After the temperature change circulation of the preset times is carried out on the semi-finished product of the smart card detected through the physical structure, carrying out second electrical performance detection, and ending performance test if the second electrical performance detection is not passed; and determining the smart card semi-finished product which passes the first electrical performance detection, passes the physical structure detection and passes the second electrical performance detection as a performance test passing.
8. The method for detecting electrostatic tolerance of a smart card according to claim 7, wherein the performing the first electrical property detection on the smart card semi-finished product comprises: Detecting values of a plurality of electrical parameters of the smart card semi-finished product to obtain first detection information, wherein the plurality of electrical parameters comprise resonant frequency, quality factor, on-resistance of a pin, threshold voltage of a semiconductor device, leakage current of the semiconductor device, I-V curve of pulse current and clamping voltage, if the offset of any electrical parameter in the first detection information relative to the electrical parameter of initial detection information exceeds 10%, judging that the smart card semi-finished product fails to pass the first electrical performance detection, otherwise, judging that the smart card semi-finished product passes the first electrical performance detection, and the initial detection information comprises values of the plurality of electrical parameters of the smart card semi-finished product before discharge is accepted; The detecting the physical structure of the smart card semi-finished product detected by the first electrical property includes: Detecting whether an appearance defect exists in the area where the chip of the smart card semi-finished product is located or not through a microscopic imaging system, if so, judging that the smart card semi-finished product does not pass through the physical structure detection, otherwise, judging that the smart card semi-finished product passes through the physical structure detection; After the temperature change cycle of the preset times is performed on the semi-finished product of the smart card detected through the physical structure, performing second electrical property detection, including: And after the temperature change circulation of the preset times is carried out on the semi-finished product of the smart card detected by the physical structure, detecting values of the electrical parameters of the semi-finished product of the smart card to obtain second detection information, and judging that the semi-finished product of the smart card does not pass through the second electrical performance detection if the deviation of any electrical parameter in the second detection information relative to the electrical parameter of the initial detection information exceeds 10%, or judging that the semi-finished product of the smart card passes through the second electrical performance detection.
9. The method for detecting electrostatic resistance of a smart card according to claim 7, wherein the determining an electrostatic resistance detection result of the smart card of the lot to be tested based on the performance detection data includes: determining the semi-finished product of the smart card determined to pass the performance test as an evaluation sample; Determining a rating of each of the evaluation samples based on a discharge voltage at which the evaluation sample has been subjected to a discharge; and determining the electrostatic tolerance detection result of the smart card of the batch to be detected based on the grade of all the evaluation samples.
10. The method of claim 9, wherein the determining the rank of each of the evaluation samples based on the discharge voltage at which the evaluation sample has been discharged comprises: If the discharge voltage of the evaluation sample in the human body discharge mode is smaller than 10kV and/or the discharge voltage of the evaluation sample in the machine discharge mode is smaller than 4kV, determining that the evaluation sample is a three-level evaluation sample; If the discharge voltage of the evaluation sample in the human body discharge mode is 10kV to 15kV and the discharge voltage of the evaluation sample in the machine discharge mode is more than or equal to 4kV, or the discharge voltage of the evaluation sample in the human body discharge mode is more than or equal to 10kV and the discharge voltage of the evaluation sample in the machine discharge mode is 4kV to 8kV, determining that the evaluation sample is a secondary evaluation sample; And if the discharge voltage of the evaluation sample in the human body discharge mode is smaller than or equal to 15kV and the discharge voltage of the evaluation sample in the machine discharge mode is smaller than or equal to 8kV, determining the evaluation sample as a primary evaluation sample.
11. The method for detecting electrostatic resistance of a smart card according to claim 10, wherein the determining the electrostatic resistance detection result of the smart card of the lot to be tested based on the grades of all the evaluation samples includes: if the secondary evaluation sample is not present and the primary evaluation sample is not present in all the evaluation samples, determining that the electrostatic tolerance detection result of the smart card of the batch to be detected is unqualified; if the secondary evaluation samples exist in all the evaluation samples, determining that the electrostatic tolerance detection result of the intelligent card of the batch to be detected is qualified; And if the first-level evaluation sample exists in all the evaluation samples, determining that the electrostatic tolerance detection result of the smart card of the batch to be detected is qualified and excellent.

Description

Method for detecting electrostatic tolerance of smart card Technical Field The application relates to the technical field of intelligent card performance detection, in particular to a method for detecting electrostatic tolerance of an intelligent card. Background In the smart card, the chip is a core functional unit, and the chip faces the threat of static electricity in the lamination process in the manufacturing process of the smart card. In the related art, the Electrostatic tolerance detection of the smart card is to perform Electrostatic discharge test (electric static DISCHARGE TEST, ESD) on the finished product after lamination, so that it is difficult to obtain accurate detection parameters of the chip coated in the substrate, and the Electrostatic tolerance detection result is inaccurate. Disclosure of Invention The embodiment of the application provides a method for detecting the electrostatic tolerance of a smart card, which can improve the accuracy of the detection result of the electrostatic tolerance. The embodiment of the application provides a method for detecting electrostatic tolerance of a smart card, which comprises the steps of obtaining a plurality of smart card semi-finished products of the smart card to be detected, wherein the smart card semi-finished products comprise a chip, a first substrate layer, a second substrate layer and a third substrate layer, the chip is integrated on the first substrate layer, the second substrate layer and the third substrate layer are positioned on two opposite surfaces of the first substrate layer and are not pressed, electrostatic simulation of a lamination scene is carried out on each smart card semi-finished product through discharging to the smart card semi-finished product, the second substrate layer and the third substrate layer of the smart card semi-finished product subjected to electrostatic simulation are peeled, performance detection is carried out on each smart card semi-finished product subjected to peeling, performance detection data is obtained, and an electrostatic tolerance detection result of the smart card to be detected in the batch is determined based on the performance detection data. According to some of the foregoing embodiments of the present application, the electrostatic simulation of the lamination scenario for each of the smart card semi-finished products by discharging the smart card semi-finished products includes discharging the smart card semi-finished products in a human body discharging mode to perform electrostatic simulation of lamination friction in the lamination scenario for the smart card semi-finished products, and discharging the smart card semi-finished products in a machine discharging mode to perform electrostatic simulation of press contact in the lamination scenario for the smart card semi-finished products. According to some embodiments of the application, the electrostatic simulation of the lamination scene is performed on each smart card semi-finished product by discharging the smart card semi-finished product, and the electrostatic simulation of the lamination scene is performed on each smart card semi-finished product by discharging, wherein the discharge voltage conditions matched by the smart card semi-finished products with different numbers are different. According to some embodiments of the present application, the performing electrostatic simulation of the lamination scenario on each smart card semi-finished product by discharging includes sequentially performing a human body discharging mode discharging and a machine discharging mode discharging on each smart card semi-finished product according to ascending numbers, wherein a discharging voltage in a human body discharging mode corresponding to the smart card semi-finished product with the first number is 2000V, a discharging voltage in a machine discharging mode corresponding to the smart card semi-finished product with the first number is 1000V, a discharging voltage in a corresponding human body discharging mode corresponding to the smart card semi-finished product with the first number is increased by at least one voltage level, and/or a discharging voltage in a corresponding machine discharging mode is increased by at least one voltage level, wherein each voltage level in the human body discharging mode is 500V, and each voltage level in the machine discharging mode is 1000V. According to some of the foregoing embodiments of the present application, the performing the human body discharge mode discharge includes discharging the area of the smart card semi-finished product where the chip is located three times in the human body discharge mode. According to some of the foregoing embodiments of the application, the performing the machine discharge mode discharge includes sequentially discharging each pin pad of the chip of the smart card blank once in the machine discharge mode, wherein a discharge interval is 10s. According to the embodi