CN-121995185-A - IGBT module service life prediction method and detection device

CN121995185ACN 121995185 ACN121995185 ACN 121995185ACN-121995185-A

Abstract

The application relates to the field of data detection, in particular to a service life prediction method of an IGBT module, wherein in the method, a junction temperature change value of the IGBT module is calculated by using a first calculation model, and the characteristic that a second calculation model is insensitive to a time interval is utilized; if the first calculation model determines that the first junction temperature change value of the first time interval is greater than or equal to the preset first junction temperature threshold value, the second calculation module determines the second junction temperature change value of the first time interval. If the second junction temperature change value is greater than or equal to the first junction temperature threshold value, a first linear relation is constructed based on the multiple loss powers and the multiple historical junction temperature change values, a fourth junction temperature change value of a first time interval is determined, and the fourth junction temperature change value is input into a first life prediction model to obtain a target predicted life of the corresponding IGBT module.

Inventors

TSUYUKI YASUHIRO
MENG YI

Assignees

株式会社日立制作所

Dates

Publication Date: 20260508
Application Date: 20241108

Claims (10)

1. An IGBT module lifetime prediction method, characterized by being applied to a detection device including a first calculation model, a second calculation model, and a first lifetime prediction model, wherein the method includes: Determining a first junction temperature change value of the IGBT module corresponding to a first time interval through the first calculation model; if the first junction temperature change value is greater than or equal to a preset first junction temperature threshold value, determining a second junction temperature change value of the IGBT module corresponding to the first time interval through the second calculation module; If the second junction temperature change value is greater than or equal to the first junction temperature threshold, obtaining third junction temperature change values corresponding to a plurality of second time intervals and loss power corresponding to the plurality of second time intervals, wherein the third junction temperature change value is calculated before the first junction temperature change value and is smaller than the first junction temperature threshold; Constructing a first linear relationship based on a plurality of said power losses and a plurality of said third junction temperature variation values; Determining a fourth junction temperature change value corresponding to the first time interval based on the first linear relationship and the loss power corresponding to the first time interval, wherein the fourth junction temperature change value is smaller than the first junction temperature threshold; And inputting the fourth junction temperature change value into the first life prediction model to obtain the target predicted life of the corresponding IGBT module.
2. The method according to claim 1, wherein the method further comprises: If the first junction temperature change value is smaller than the first junction temperature threshold value, inputting the first junction temperature change value into the first life prediction model to obtain a target predicted life corresponding to the IGBT module; Or if the second junction temperature change value is smaller than the first junction temperature threshold value, inputting the second junction temperature change value into the first life prediction model to obtain the target predicted life corresponding to the IGBT module.
3. The method of claim 1, wherein the preset first junction temperature threshold comprises 125 ℃.
4. The method according to claim 1, wherein the method further comprises: Acquiring specification parameters of the IGBT module, wherein the specification parameters comprise resistance values and thermal impedance; Determining the loss power of the IGBT module in the first time interval according to the current of the IGBT module in the first time interval; Based on the specification parameters, the lost power, and the first time interval, the first calculation model or the second calculation model is constructed.
5. The method of claim 4, wherein the first calculation model determines the first junction temperature change value by the following formula: Wherein Δt j -1 represents the first junction temperature change value, Δt represents the first time interval, i=1, 2,3, 4, τ th,i represents the number of resistors included in the IGBT module, τ th,i represents the thermal impedance corresponding to the i-th resistor in the IGBT module, P i represents the loss power corresponding to the i-th resistor in the IGBT module within the first time interval Δt, and Δt j,i (j-1) represents the junction temperature change value corresponding to the i-th resistor in the IGBT module in the previous time interval of the first time interval.
6. The method of claim 4, wherein the second calculation model determines the second junction temperature change value by the following formula: Wherein Δt j -2 represents the second junction temperature change value, R represents the resistance value corresponding to the IGBT module, Δt represents the first time interval, τ th represents the thermal impedance corresponding to the IGBT module, P represents the power loss corresponding to the IGBT module at the first time interval Δt, and Δt j,i (j-1) represents the junction temperature change value corresponding to the IGBT module at the previous time interval of the first time interval.
7. The method of claim 1, wherein the first time interval is determined by a time interval of a first time instant and a second time instant acquired randomly.
8. The method of claim 1, wherein the interval duration of the first time interval and the interval duration of the second time interval are each less than a preset first time duration threshold.
9. The method of claim 1, wherein the first linear relationship comprises the third junction temperature change value having a proportional relationship with the power loss corresponding to the plurality of second time intervals.
10. A detection device, characterized in that the detection device comprises: the first calculation model is used for determining a first junction temperature change value of the IGBT module corresponding to a first time interval; The second calculation model is used for determining a second junction temperature change value of the IGBT module corresponding to the first time interval when the first junction temperature change value is larger than or equal to a preset first junction temperature threshold value; the first life prediction model is used for determining the target predicted life of the IGBT module based on a fourth junction temperature change value when the second junction temperature change value is greater than or equal to the first junction temperature threshold value; the fourth junction temperature change value is smaller than the first junction temperature threshold, the fourth junction temperature change value is determined based on a first linear relation and loss power corresponding to the first time interval, the first linear relation is determined based on third junction temperature change values corresponding to a plurality of second time intervals and loss power corresponding to the plurality of second time intervals, the third junction temperature change value is calculated before the first junction temperature change value, and the third junction temperature change value is smaller than the first junction temperature threshold.

Description

IGBT module service life prediction method and detection device Technical Field The application relates to the field of data detection, in particular to an IGBT module service life prediction method and a detection device. Background Currently, insulated gate bipolar transistor (Insulate-Gate Bipolar Transistor-IGBT) modules are widely used in the railway industry. Because the IGBT module is continuously heated and cooled during use, frequent power cycles are generated, and gradually accumulate over time, eventually affecting the service life of the IGBT module, possibly causing equipment downtime or causing larger accidents. For example, the lifetime of an unused IGBT module is 15 years, and as the IGBT module is continuously heated and cooled during use, the lifetime of the IGBT module may be shortened from 15 years to 10 years, and if the lifetime of the IGBT module is not monitored effectively in time, accidents are easily caused. Therefore, it is necessary to predict the lifetime of the IGBT module, and to avoid accidents caused by the end of the lifetime of the IGBT module. Disclosure of Invention The embodiment of the application provides a method and a device for predicting the service life of an IGBT module, which are used for solving the problem of inaccurate service life prediction of the IGBT module. The application provides a service life prediction method of an IGBT module, which is applied to a detection device, wherein the detection device comprises a first calculation model, a second calculation model and a first service life prediction model, the method comprises the steps of determining a first junction temperature change value of the IGBT module corresponding to a first time interval through the first calculation model, determining a second junction temperature change value of the IGBT module corresponding to the first time interval through the second calculation module if the first junction temperature change value is larger than or equal to a preset first junction temperature threshold value, obtaining a plurality of third junction temperature change values corresponding to the second time interval and loss powers corresponding to the plurality of second time intervals if the second junction temperature change value is larger than or equal to the first junction temperature threshold value, calculating the third junction temperature change value before the first junction temperature change value, and constructing a first linear relation based on the loss powers and the third junction temperature change values, determining a fourth junction temperature change value of the corresponding to the first time interval based on the loss powers corresponding to the first linear relation and the first time interval, and predicting the fourth junction temperature change value to the first service life of the IGBT module. In one possible implementation of the first aspect, the method further includes inputting the first junction temperature change value into the first life prediction model to obtain the target predicted life of the corresponding IGBT module if the first junction temperature change value is less than the first junction temperature threshold, or inputting the second junction temperature change value into the first life prediction model to obtain the target predicted life of the corresponding IGBT module if the second junction temperature change value is less than the first junction temperature threshold. In a possible implementation of the first aspect, the preset first junction temperature threshold includes 125 ℃. In one possible implementation of the first aspect, the method further includes obtaining a specification parameter of the IGBT module, where the specification parameter includes a resistance and a thermal impedance, determining a loss power of the IGBT module at a first time interval according to a current of the IGBT module at the first time interval, and constructing the first calculation model or the second calculation model based on the specification parameter, the loss power, and the first time interval. In a possible implementation of the first aspect, the first calculation model determines the first junction temperature change value by the following formula: Wherein Δt j -1 represents a first junction temperature change value, Δt represents a first time interval, i=1, 2, 3,4, τ th,i represents a thermal impedance corresponding to an i-th resistor in the IGBT module, P i represents a loss power corresponding to the i-th resistor in the IGBT module within the first time interval Δt, and Δt j,i (j-1) represents a junction temperature change value corresponding to an i-th resistor in the IGBT module in a previous time interval of the first time interval. In a possible implementation of the first aspect, the second calculation model determines the second junction temperature change value by the following formula: Wherein Δt j -2 represents the second junction temperatu