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CN-121995555-A - Coating structure and preparation method thereof

CN121995555ACN 121995555 ACN121995555 ACN 121995555ACN-121995555-A

Abstract

The application discloses a coating structure and a preparation method thereof. The coating structure comprises a substrate and a film layer structure, wherein the film layer structure is positioned on one side of the substrate and comprises a loose layer, the loose layer comprises a plurality of columnar microstructures, the microstructures are distributed in the direction perpendicular to the thickness of the substrate, and air gaps are reserved between the adjacent microstructures. The preparation method comprises the steps of providing a base material, and forming a film layer structure on one side of the base material, wherein the film layer structure comprises a loose layer, the loose layer comprises a plurality of columnar microstructures, the microstructures are distributed in a direction perpendicular to the thickness of the base material, and air gaps are reserved between adjacent microstructures.

Inventors

  • SHI XIAO
  • YAO ZHENGZHENG
  • PAN BINGQI
  • ZUO CHANGYONG

Assignees

  • 宁波舜宇车载光学技术有限公司

Dates

Publication Date
20260508
Application Date
20241107

Claims (10)

  1. 1. A plating film structure, characterized by comprising: A substrate, and A film layer structure located on one side of the substrate and comprising a porous layer; the porous layer comprises a plurality of columnar microstructures, the microstructures are distributed in a direction perpendicular to the thickness of the base material, and air gaps are reserved between adjacent microstructures.
  2. 2. The plating film structure according to claim 1, wherein the microstructure has a dimension of 10nm to 500nm in a direction perpendicular to a thickness of the substrate.
  3. 3. The plating film structure according to claim 1, wherein a minimum dimension of the air gap in a direction perpendicular to a thickness of the substrate is 3nm to 50nm.
  4. 4. The plating film structure according to claim 1, wherein the number x of the microstructures in the bulk layer of the bulk layer having an intrinsic refractive index n s 、L 2 square area, an average value of dimensions of x of the microstructures in a direction perpendicular to a thickness of the substrate The refractive index n 0 of air satisfies: Wherein L is the side length of the projection of the loose layer of L 2 square area on a plane perpendicular to the thickness direction of the substrate, and x is an integer.
  5. 5. The plating film structure according to claim 4, wherein the number x of microstructures, the average value And the side length L satisfies:
  6. 6. The plating film structure according to claim 4, wherein the intrinsic refractive index n s of the bulk layer satisfies: 1.3≤n s ≤1.65。
  7. 7. The plating film structure according to claim 1, wherein the film layer structure is an antireflection film.
  8. 8. The plating film structure of claim 7, wherein the maximum reflectance of the plating film structure is not more than 0.3% in the 400 nm-720 nm band.
  9. 9. The plating film structure of claim 1, wherein the material of the bulk layer comprises at least one of SiO 2 、Al 2 O 3 、TiO 2 and MgF 2 .
  10. 10. The plating film structure according to any one of claims 1 to 9, wherein the film layer structure further comprises: and the connecting layer is positioned between the base material and the loose layer.

Description

Coating structure and preparation method thereof Technical Field The embodiment of the application relates to the technical field of optics, in particular to a coating structure and a preparation method thereof. Background An Anti-Reflection (AR) film has a main function of reducing or eliminating reflected light from the surfaces of elements such as lenses, prisms, mirrors, etc., to increase the light transmission of these elements. AR films are widely used in the fields of daily life, industry, astronomy, electronics, etc. At present, the anti-reflection film is generally prepared from materials with low refractive index, but the refractive index of the materials is fixed, so that the anti-reflection film is limited by the optional types of the materials with low refractive index and the current processing technology, and the further reduction of the reflectivity of the anti-reflection film is difficult to realize. Disclosure of Invention The embodiment of the application provides a coating structure and a preparation method thereof. The first aspect of the present application provides a film coating structure, the film coating structure comprising a substrate and a film layer structure, the film layer structure being located on one side of the substrate and comprising a porous layer, the porous layer comprising a plurality of columnar microstructures, the plurality of microstructures being distributed in a direction perpendicular to the thickness of the substrate, and air gaps being provided between adjacent microstructures. According to one embodiment of the application, the microstructures have a dimension in a direction perpendicular to the thickness of the substrate of 10nm to 500nm. According to one embodiment of the present application, the minimum dimension of the air gap in the direction perpendicular to the thickness of the substrate is 3nm to 50nm. According to one embodiment of the application, the average value of the dimensions of the number x, x of microstructures in the bulk layer of the area of the bulk layer of the inherent index n s、L2 square in the direction perpendicular to the thickness of the substrateThe refractive index n 0 of air satisfies: Wherein L is the side length of the projection of the loose layer with L 2 square area on a plane perpendicular to the thickness direction of the substrate, and x is an integer. According to one embodiment of the application, the number of microstructures, x, averageAnd the side length L satisfies: according to one embodiment of the application, the intrinsic refractive index n s of the bulk layer satisfies: 1.3≤ns≤1.65。 According to one embodiment of the application, the film layer structure is an anti-reflective film. According to one embodiment of the application, the maximum reflectivity of the coating structure is not more than 0.3% in the 400-720 nm wave band. According to one embodiment of the application, the material of the porous layer comprises at least one of SiO 2、Al2O3、TiO2 and MgF 2. According to one embodiment of the application, the porous layer is formed by a vapor deposition process. According to one embodiment of the application, the membrane layer structure further comprises a tie layer, the tie layer being located between the substrate and the porous layer. According to one embodiment of the application, a plurality of connection layers are stacked in sequence in the thickness direction of the substrate, and the materials of two adjacent connection layers are different. According to one embodiment of the application, the material of the connection layer comprises at least one of Nb 2O5、SiO2 and TiO 2. The preparation method of the coating structure provided by the second aspect of the application comprises the steps of providing a substrate, and forming a film layer structure on one side of the substrate, wherein the film layer structure comprises a loose layer, the loose layer comprises a plurality of columnar microstructures, the microstructures are distributed in a direction perpendicular to the thickness of the substrate, and air gaps are reserved between adjacent microstructures. According to one embodiment of the application, forming a film layer structure on one side of a substrate comprises placing the substrate in a reaction chamber, and treating the film material in the reaction chamber by adopting a vapor deposition process, and introducing collision gas into the reaction chamber so as to deposit the film material on one side of the substrate to form a loose layer. According to one embodiment of the application, the smallest dimension of the air gap in the direction perpendicular to the thickness of the substrate is inversely related to the deposition temperature of the vapor deposition process and the vacuum level of the reaction chamber, respectively, and the smallest dimension of the air gap in the direction perpendicular to the thickness of the substrate is positively related to the amount of impinging gas