CN-121995569-A - Semiconductor waveguide device and method of forming the same

CN121995569ACN 121995569 ACN121995569 ACN 121995569ACN-121995569-A

Abstract

The method includes performing a first etch on a substrate, wherein the substrate includes six sections arranged in sequence to define five partitions along a first direction, wherein the first etch forms a first protruding region extending from the first partition to the fifth partition and two first connection regions located on both sides of the first protruding region, performing a second etch on the two first connection regions to form a strip waveguide along a sixth section, performing a third etch on the two first connection regions to form a rib waveguide along the third section, and performing a fourth etch on the two first connection regions to form a deep rib waveguide along the first section. Embodiments of the present application also relate to semiconductor waveguide devices and methods of forming the same.

Inventors

LUO WENXUN
ZHENG LIXIAN
CHEN JUNKUI
ZHONG GUOFANG
SHI QIYUAN
XU YINGJIE

Assignees

台湾积体电路制造股份有限公司

Dates

Publication Date: 20260508
Application Date: 20251231
Priority Date: 20250508

Claims (10)

1. A method of forming a semiconductor waveguide device, comprising: Performing a first etching on a substrate, wherein the substrate includes a first section, a second section, a third section, a fourth section, a fifth section, and a sixth section arranged in this order to define a first division, a second division, a third division, a fourth division, and a fifth division along a first direction, wherein the first etching forms a first protruding region extending in the first division to the fifth division and two first connection regions on both sides of the first protruding region; Performing a second etch on the two first connection regions to form a strip waveguide along the sixth cross-section; Performing a third etching on the two first connection regions to form a rib waveguide along the third section, and A fourth etch is performed on the two first connection regions to form a deep rib waveguide along the first cross section.
2. The method of claim 1, wherein the substrate comprises a dielectric layer, a silicon layer over the dielectric layer, and a hard mask layer over the silicon layer.
3. The method of claim 2, wherein the rib waveguide comprises the first protruding region and two second connection regions connected to the first protruding region, wherein the two second connection regions have a first thickness.
4. A method according to claim 3, wherein the deep rib waveguide comprises the first protruding region and two third connection regions connected to the first protruding region, wherein the two third connection regions have a second thickness that is less than the first thickness.
5. The method of claim 4, wherein after the first, third, and fourth etches, the silicon layer includes a first transition waveguide between the deep rib waveguide and the rib waveguide, wherein the first transition waveguide includes a first protruding region and two fourth connection regions connected to the first protruding region, wherein each of the fourth connection regions includes a base portion having the second thickness and a first wing portion located above the base portion.
6. The method of claim 5, wherein the first wing portion tapers from the rib waveguide to the deep rib waveguide from a top view.
7. The method of claim 2, wherein the strip waveguide includes the first protruding region and has a substantially equal width from a bottom to a top of the strip waveguide.
8. The method of claim 7, wherein after the first etch, the second etch, and the third etch, the silicon layer comprises a second transition waveguide between the rib waveguide and the strip waveguide, wherein the second transition waveguide comprises the first protruding region and two fifth connection regions connected to the first protruding region, wherein each of the fifth connection regions tapers from the rib waveguide to the strip waveguide.
9. A method of forming a semiconductor waveguide device, comprising: Performing a first etch on a substrate using a first mask layer, wherein the substrate includes a first section, a second section, a third section, a fourth section, a fifth section, and a sixth section arranged in order to define a first division, a second division, a third division, a fourth division, and a fifth division along a first direction, wherein the first mask layer exposes a first stripe region and a second stripe region of the substrate extending in the first direction, and the first mask layer covers a central region of the substrate between the first stripe region and the second stripe region; performing a second etch on the substrate using a second mask layer, wherein the second mask layer exposes a first portion of the first and second stripe regions and the central region of the fifth partition, and exposes a second portion of the first and second stripe regions extending from the first portion and tapering from the fifth partition to the third partition; Performing a third etch on the substrate using a third mask layer, wherein the third mask layer exposes a third portion of the first and second stripe regions and the central region of the first, second and third partitions and exposes a fourth portion extending from the third portion and tapering from the third to the fifth partition, and A fourth etch is performed on the substrate using a fourth mask layer, wherein the fourth mask layer exposes a fifth portion of the first and second stripe regions and the central region of the first partition, and exposes a sixth portion of the first and second stripe regions extending from the fifth portion and tapering from the first partition to the second partition.
10. A semiconductor waveguide device comprising: A substrate including a first partition, a second partition, a third partition, a fourth partition, and a fifth partition sequentially arranged in a first direction, the substrate comprising: a first protruding region extending in the first direction from the first partition to the fifth partition, the first protruding region having a first thickness; Two first connection regions extending in the first direction in the first and second partitions and connected to both sides of the first protruding region from a bottom of the first protruding region, wherein each of the first connection regions includes a base portion having a second thickness smaller than the first thickness and a wing portion located above the base portion, the wing portion tapering from the second partition to the first partition in a top view, and Two second connection regions extending in the first direction and connected to the first protruding region from a bottom of the first protruding region in the third and fourth partitions, wherein each of the second connection regions tapers from the third to fourth partitions from a top view.

Description

Semiconductor waveguide device and method of forming the same Technical Field Embodiments of the present application relate to semiconductor waveguide devices and methods of forming the same. Background Modern technological advances such as big data, cloud computing, cloud storage, and internet of things (IoT) have driven an exponential growth in the processing and communication of data for various applications, such as high performance computers, data centers, and telecommunications. To address the emerging need for high data rate transmission, modern semiconductor structures may include optical elements for providing optical data links that provide improvements in data transmission rates over those of existing electrical data links. When incorporating optical data links into semiconductor devices, various types of optical components may be incorporated into the optical devices for performing different tasks. Such optical assemblies may have different design and performance requirements. The performance of the optics may depend on the robust integration of these optical components. Disclosure of Invention Some embodiments of the present application provide a method of forming a semiconductor waveguide device, comprising performing a first etch on a substrate, wherein the substrate includes a first section, a second section, a third section, a fourth section, a fifth section, and a sixth section arranged in order to define a first partition, a second partition, a third partition, a fourth partition, and a fifth partition along a first direction, wherein the first etch forms a first protruding region extending in the first partition to the fifth partition and two first connection regions on both sides of the first protruding region, performing a second etch on the two first connection regions to form a stripe waveguide along the sixth section, performing a third etch on the two first connection regions to form a rib waveguide along the third section, and performing a fourth etch on the two first connection regions to form a deep rib waveguide along the first section. Further embodiments of the present application provide a method of forming a semiconductor waveguide device comprising performing a first etch of a substrate using a first mask layer, wherein the substrate comprises a first cross-section, a second cross-section, a third cross-section, a fourth cross-section, a fifth cross-section, and a sixth cross-section arranged in sequence to define a first segment, a second segment, a third segment, a fourth segment, and a fifth segment along a first direction, wherein the first mask layer exposes a first segment region and a second segment region of the substrate extending in the first direction and the first mask layer covers a central region of the substrate between the first segment region and the second segment region, and the second mask layer exposes a first portion of the first segment region and the second segment region and the central region of the fifth segment region, and is exposed from the first segment region and the second segment region and the third segment region and is tapered from the first segment region to the third segment region and the third segment region is exposed, performing a second etch of the substrate using a second mask layer, wherein the second mask layer exposes a first segment region and the third segment region and the fifth segment region and the third segment region is tapered from the third segment region and the third segment region is exposed, and exposing a sixth portion extending from the fifth portion in the first strip region and the second strip region and tapering from the first partition to the second partition. Still further embodiments of the present application provide a semiconductor waveguide device comprising a substrate comprising a first section, a second section, a third section, a fourth section and a fifth section arranged in this order in a first direction, the substrate comprising a first protruding region extending from the first section to the fifth section in the first direction, the first protruding region having a first thickness, two first connection regions extending in the first direction in the first section and the second section and connected to both sides of the first protruding region from a bottom of the first protruding region, wherein each of the first connection regions comprises a base portion having a second thickness smaller than the first thickness and a wing portion located above the base portion, the wing portion tapering from the second section to the first section from a top view, and two second connection regions extending in the first direction and tapering from the first section to the fourth section from a top view, and each of the connection regions tapering from the first section to the third section from the top view. Drawings The various aspects of the embodiments of the present disclosure are best understood f