CN-121995688-A - Method and device for correcting photomask pattern, electronic equipment, storage medium and program product

CN121995688ACN 121995688 ACN121995688 ACN 121995688ACN-121995688-A

Abstract

The disclosure relates to a method, a device, an electronic device, a storage medium and a program product for correcting a photomask pattern, wherein the method for correcting the photomask pattern comprises the steps of obtaining an original photomask pattern, wherein the original photomask pattern comprises a target area, the target area is an area with influence on photomask limitation, and carrying out optical proximity effect correction on the original photomask pattern to obtain a corrected photomask pattern, and the target area is a blank area which does not comprise the pattern in the corrected photomask pattern. The technical scheme can realize the effective correction of the photomask pattern on the basis of eliminating the photomask limit and converging the outline of the photomask pattern.

Inventors

ZHANG GUOQIAN
WANG SHUANG
Zhuang Boqing

Assignees

成都新紫光半导体科技有限公司

Dates

Publication Date: 20260508
Application Date: 20241104

Claims (10)

1. A method for modifying a photomask pattern, comprising: Acquiring an original photomask pattern, wherein the original photomask pattern comprises a target area, and the target area is an area with influence on photomask limitation; and carrying out optical proximity effect correction on the original photomask pattern to obtain a corrected photomask pattern, wherein in the corrected photomask pattern, the target area is a blank area which does not comprise a pattern.
2. The method of claim 1, wherein the original mask pattern comprises a first pattern, a second pattern, and a third pattern, the target region comprises a first target region and a second target region, a first blank region exists between the first pattern and the second pattern, a second blank region exists between the second pattern and the third pattern, the first target region is located in the first blank region, and the second target region is located in the second blank region.
3. The correction method according to claim 2, wherein the corrected mask pattern includes a corrected first pattern, a corrected second pattern, and a corrected third pattern, and the first target area is a blank area between the corrected first pattern and the corrected second pattern that does not include a pattern, and the second target area is a blank area between the corrected second pattern and the corrected third pattern that does not include a pattern.
4. The method according to claim 1, wherein performing optical proximity effect correction on the original mask pattern to obtain a corrected mask pattern comprises: Calculating the light intensity of the area except the target area in the original photomask graph through a calculation model in an optical proximity effect correction platform to obtain light intensity distribution information; And carrying out optical proximity effect correction on the original photomask pattern according to the light intensity distribution information to obtain a corrected photomask pattern.
5. The correction method according to claim 4, characterized in that the correction method further comprises: and configuring a light intensity calculation mode corresponding to the calculation model, so that the calculation model calculates the light intensity of the area, except the target area, in the original photomask graph based on the configured light intensity calculation mode.
6. The correction method according to any one of claims 1 to 5, wherein the original mask pattern is a pattern corresponding to a connection hole on a connection layer of a semiconductor, the correction method further comprising: Performing photomask manufacturing according to the corrected photomask pattern to obtain a photomask, wherein the photomask comprises a pattern for forming the connecting hole; transferring the pattern for forming the connection holes to the connection layer; and forming the connecting hole on the connecting layer according to the photomask pattern transferred onto the connecting layer, wherein the roundness of the connecting hole is Yu Yushe degrees of roundness.
7. A photomask pattern correction apparatus, comprising: The device comprises an acquisition module, a display module and a display module, wherein the acquisition module is used for acquiring an original photomask graph, the original photomask graph comprises a target area, and the target area is an area with photomask limitation; And the correction module is used for carrying out optical proximity effect correction on the original photomask pattern to obtain a corrected photomask pattern, wherein in the corrected photomask pattern, the target area is a blank area which does not comprise the pattern.
8. A computer-readable storage medium having a computer program stored thereon, wherein the program when executed by a processor implements the method for correcting a mask pattern according to any one of claims 1 to 6.
9. An electronic device, comprising: A memory having a computer program stored thereon; A processor for executing the computer program in the memory to implement the method for correcting a mask pattern according to any one of claims 1 to 6.
10. A computer program product comprising a computer program which, when executed by a processor, implements a method for modifying a reticle pattern according to any one of claims 1 to 6.

Description

Method and device for correcting photomask pattern, electronic equipment, storage medium and program product Technical Field The present disclosure relates to the field of semiconductor technology, and in particular, to a method, an apparatus, an electronic device, a storage medium, and a program product for correcting a photomask pattern. Background In the field of semiconductor manufacturing, a photomask process is involved, which can form a pattern on a semiconductor by using a photolithography technique, and the process is similar to the process of copying an image onto a photo by using a negative film when the photo is developed, and the designed pattern is copied onto a wafer by the action of the photomask. Therefore, a corresponding mask pattern is also required to be designed on the mask so that the mask pattern can be copied onto the wafer by the photolithography technique. Disclosure of Invention The present disclosure provides a method, an apparatus, an electronic device, a storage medium, and a program product for correcting a mask pattern, which can implement effective correction of a mask pattern on the basis of eliminating mask limitations. In order to achieve the above object, in a first aspect, the present disclosure provides a method for correcting a photomask pattern, which includes obtaining an original photomask pattern, where the original photomask pattern includes a target area, and the target area is an area having an influence on a photomask limit, and performing optical proximity effect correction on the original photomask pattern to obtain a corrected photomask pattern, where the target area is a blank area that does not include a pattern in the corrected photomask pattern. Optionally, the original photomask pattern comprises a first pattern, a second pattern and a third pattern, the target area comprises a first target area and a second target area, a first blank area exists between the first pattern and the second pattern, a second blank area exists between the second pattern and the third pattern, the first target area is located in the first blank area, and the second target area is located in the second blank area. Optionally, the corrected photomask pattern includes a corrected first pattern, a corrected second pattern and a corrected third pattern, in the corrected photomask pattern, the first target area is a blank area between the corrected first pattern and the corrected second pattern, and the second target area is a blank area between the corrected second pattern and the corrected third pattern, wherein the blank area does not include a pattern. Optionally, the optical proximity effect correction is performed on the original photomask pattern to obtain a corrected photomask pattern, which comprises performing light intensity calculation on the area except the target area in the original photomask pattern through a calculation model in an optical proximity effect correction platform to obtain light intensity distribution information, and performing optical proximity effect correction on the original photomask pattern according to the light intensity distribution information to obtain a corrected photomask pattern. Optionally, the correction method further includes configuring a light intensity calculation mode corresponding to the calculation model, so that the calculation model calculates the light intensity of the area, except the target area, in the original photomask pattern based on the configured light intensity calculation mode. Optionally, the original photomask pattern is a pattern corresponding to a connecting hole on a connecting layer of a semiconductor, and the correction method further comprises the steps of performing photomask manufacturing according to the corrected photomask pattern to obtain a photomask, wherein the photomask comprises a pattern for forming the connecting hole, transferring the pattern for forming the connecting hole to the connecting layer, and forming the connecting hole on the connecting layer according to the photomask pattern transferred to the connecting layer, wherein the roundness of the connecting hole is Yu Yushe degrees of roundness. In a second aspect, the disclosure provides a device for correcting a photomask pattern, which includes an acquisition module configured to acquire an original photomask pattern, where the original photomask pattern includes a target area, and the target area is an area with a photomask limit, and a correction module configured to perform optical proximity effect correction on the original photomask pattern to obtain a corrected photomask pattern, where the target area is a blank area that does not include a pattern in the corrected photomask pattern. In a third aspect, the present disclosure provides a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, implements the method for correcting a reticle pattern according to the first aspec