CN-121995704-A - Pattern measuring method, pattern measuring device, semiconductor manufacturing apparatus, storage medium, and program product

Abstract

The disclosure relates to a pattern measurement method, a device, a semiconductor manufacturing device, a storage medium and a program product, wherein the pattern measurement method comprises the steps of etching a first photoresist pattern on a first structural layer of a semiconductor silicon wafer to obtain an etched pattern, taking a second photoresist pattern on a second structural layer of the semiconductor silicon wafer as a reference pattern, and measuring target parameters of the etched pattern, wherein the first structural layer and the second structural layer are adjacent structural layers, and the target parameters are used for adjusting the photoresist pattern for the next etching. According to the technical scheme, the effective and simple measurement of the relevant parameters of the etched pattern can be realized, and the pattern etching error of the semiconductor silicon wafer can be reduced according to the relevant parameters.

Inventors

• Zhuang Boqing
• ZHANG GUOQIAN
• WANG SHUANG

Assignees

• 成都新紫光半导体科技有限公司

Dates

Publication Date

20260508

Application Date

20241104

Claims (12)

1. 1.A method of measuring a pattern, comprising: Etching the first photoresist pattern on the first structural layer of the semiconductor silicon wafer to obtain an etched pattern; And taking a second photoresist pattern on a second structural layer of the semiconductor silicon wafer as a reference pattern, and measuring target parameters of the etched pattern, wherein the first structural layer and the second structural layer are adjacent structural layers, and the target parameters are used for adjusting the photoresist pattern etched next time.
2. 2. The pattern measurement method according to claim 1, wherein the etched pattern includes a first pattern and a second pattern, a blank region excluding a photoresist pattern exists between the first pattern and the second pattern, and the target parameter includes a blank distance excluding the photoresist pattern between an end of the first pattern and an end of the second pattern in a predetermined direction.
3. 3. The pattern measurement method according to claim 2, wherein the second photoresist pattern includes a third pattern and a fourth pattern, a blank area excluding the photoresist pattern exists between the third pattern and the fourth pattern, a projection pattern of the third pattern projected onto the first structure layer along a preset projection direction is located at a first preset position of the first pattern before etching, and a projection pattern of the fourth pattern projected onto the first structure layer along the preset projection direction is located at a second preset position of the second pattern before etching.
4. 4. The pattern measurement method according to claim 3, wherein the measuring the target parameter of the etched pattern using the second photoresist pattern on the second structural layer of the semiconductor wafer as the reference pattern comprises: Measuring a blank distance between the third pattern and the fourth pattern, excluding the photoresist pattern, in the preset direction; measuring a first distance between the tail end of the first pattern and the third pattern and a second distance between the tail end of the second pattern and the fourth pattern in the preset direction; And determining the target parameter according to the blank distance, the first distance and the second distance.
5. 5. The method of claim 4, wherein measuring a first distance between an end of the first pattern and the third pattern comprises: acquiring a first dimension parameter of a first pattern before etching; acquiring a first dimension change parameter generated by etching between the first pattern and the first pattern before etching; And determining the first distance according to the first dimension parameter, the first preset position and the first dimension change parameter.
6. 6. The pattern measurement method according to claim 4 or 5, wherein the measuring the second distance between the end of the second pattern and the fourth pattern includes: Acquiring a second dimension parameter of a second pattern before etching; Acquiring a second dimension change parameter generated by etching between the second pattern and the second pattern before etching; And determining the second distance according to the second dimension parameter, the second preset position and the second dimension change parameter.
7. 7. The method of claim 4, wherein determining the target parameter based on the blank distance, the first distance, and the second distance comprises: And subtracting the first distance and the second distance on the basis of the blank distance to obtain a blank distance which does not comprise a photoresist pattern between the tail end of the first pattern and the tail end of the second pattern in the preset direction.
8. 8. The pattern measurement method according to any one of claims 1 to 5, wherein the first photoresist pattern is a photoresist pattern that does not meet a predetermined measurement condition, and the second photoresist pattern is a photoresist pattern that meets a predetermined measurement condition, and the predetermined measurement condition is used to define characteristics of the photoresist pattern and/or the post-etching pattern that can be measured.
9. 9. A graphic measurement device, comprising: the etching module is configured to etch the first photoresist pattern on the first structural layer of the semiconductor silicon wafer to obtain an etched pattern; And the measuring module is configured to measure target parameters of the etched pattern by taking a second photoresist pattern on a second structural layer of the semiconductor silicon wafer as a reference pattern, wherein the first structural layer and the second structural layer are adjacent structural layers, and the target parameters are used for adjusting the photoresist pattern etched next time.
10. 10. A semiconductor manufacturing apparatus, characterized by comprising: A memory having a computer program stored thereon; a processor for executing the computer program in the memory to implement the method for measuring a graphic according to any one of claims 1 to 8.
11. 11. A computer readable storage medium having stored thereon a computer program, which when executed by a processor implements the method of measuring a pattern according to any of claims 1 to 8.
12. 12. A computer program product comprising a computer program which, when executed by a processor, implements the method of measuring a pattern according to any one of claims 1 to 8.

Description

Pattern measuring method, pattern measuring device, semiconductor manufacturing apparatus, storage medium, and program product Technical Field The present disclosure relates to the field of semiconductor manufacturing technology, and in particular, to a pattern measurement method, a pattern measurement device, a semiconductor manufacturing apparatus, a storage medium, and a program product. Background The photoetching technology is a technology which is important in the semiconductor manufacturing technology, and can transfer the pattern from the mask plate to the surface of the silicon wafer to form a semiconductor product meeting the design requirements. In the photoetching process, firstly, light irradiates a silicon wafer coated with photoresist through a light-transmitting area in a mask plate through an exposure step and performs photochemical reaction with the photoresist, then, a photoetching pattern is formed through a developing step by utilizing the dissolution degree of the photosensitive and non-photosensitive photoresist to a developer, so that the transfer of the mask plate pattern is realized, and then, the silicon wafer is etched based on the photoetching pattern formed by the photoresist layer through an etching step, so that the mask plate pattern is further transferred to the silicon wafer. Disclosure of Invention The present disclosure provides a pattern measurement method, apparatus, semiconductor manufacturing device, storage medium and program product, which can realize effective and simple measurement of relevant parameters of a pattern after etching, and further can reduce pattern etching errors of a semiconductor silicon wafer according to the relevant parameters. In order to achieve the above object, in a first aspect, the present disclosure provides a pattern measurement method, which includes etching a first photoresist pattern on a first structural layer of a semiconductor wafer to obtain an etched pattern, and measuring a target parameter of the etched pattern by using a second photoresist pattern on a second structural layer of the semiconductor wafer as a reference pattern, wherein the first structural layer and the second structural layer are adjacent structural layers, and the target parameter is used for adjusting the photoresist pattern etched next time. Optionally, the etched pattern comprises a first pattern and a second pattern, a blank area which does not comprise a photoresist pattern exists between the first pattern and the second pattern, and the target parameter comprises a blank distance which does not comprise the photoresist pattern between the tail end of the first pattern and the tail end of the second pattern in a preset direction. Optionally, the second photoresist pattern includes a third pattern and a fourth pattern, a blank area that does not include the photoresist pattern exists between the third pattern and the fourth pattern, a projection pattern of the third pattern onto the first structural layer along a preset projection direction is located at a first preset position of the first pattern before etching, and a projection pattern of the fourth pattern onto the first structural layer along the preset projection direction is located at a second preset position of the second pattern before etching. Optionally, the measuring the target parameter of the etched pattern by using the second photoresist pattern on the second structural layer of the semiconductor silicon wafer as a reference pattern includes measuring a blank distance between the third pattern and the fourth pattern excluding the photoresist pattern in the preset direction, measuring a first distance between the end of the first pattern and the third pattern and a second distance between the end of the second pattern and the fourth pattern in the preset direction, and determining the target parameter according to the blank distance, the first distance and the second distance. Optionally, the measuring the first distance between the end of the first pattern and the third pattern includes obtaining a first dimension parameter of the first pattern before etching, obtaining a first dimension variation parameter between the first pattern and the first pattern before etching due to etching, and determining the first distance according to the first dimension parameter, the first preset position and the first dimension variation parameter. Optionally, the measuring the second distance between the end of the second pattern and the fourth pattern includes obtaining a second dimension parameter of the second pattern before etching, obtaining a second dimension variation parameter between the second pattern and the second pattern before etching due to etching, and determining the second distance according to the second dimension parameter, the second preset position and the second dimension variation parameter. Optionally, determining the target parameter according to the blank distance, the first dis