CN-121995710-A - Photoetching direct-writing micro-nano processing equipment and processing method

CN121995710ACN 121995710 ACN121995710 ACN 121995710ACN-121995710-A

Abstract

The application relates to the technical field of micro-nano processing and manufacturing, in particular to a lithography direct-writing micro-nano processing device and a processing method, comprising an electron beam exposure component, a laser direct-writing component, a connecting cavity and a conveying guide rail, wherein the electron beam exposure component is used for carrying out electron beam exposure on a first pattern on a sample, the laser direct-writing component is used for carrying out laser direct-writing exposure on a second pattern on the sample, the connecting cavity is communicated with the electron beam exposure assembly and the laser direct writing assembly, the conveying guide rail penetrates into the laser direct writing assembly, the connecting cavity and the electron beam exposure assembly in sequence, and the conveying guide rail is used for conveying the sample so that the sample can be exposed by the electron beam exposure assembly and the laser direct writing assembly in sequence. By sequentially carrying out different levels of exposure treatment on the sample in the equipment, the problems that the precision cannot be ensured and the sample is polluted due to the fact that the sample is transferred between different equipment are avoided.

Inventors

LI RUOHAN
ZHANG ZHENSHENG
SONG XUEFENG
YU DAPENG

Assignees

合肥国家实验室
深圳国际量子研究院

Dates

Publication Date: 20260508
Application Date: 20260310

Claims (10)

1. A lithographic direct-write micro-nano machining apparatus, comprising: An electron beam exposure assembly for performing electron beam exposure on the first pattern on the sample; The laser direct-write assembly is used for carrying out laser direct-write exposure on a second pattern on the sample: The connecting cavity is communicated with the electron beam exposure assembly and the laser direct writing assembly; The conveying guide rail penetrates into the laser direct-write assembly, the connecting cavity and the electron beam exposure assembly in sequence, and is used for conveying the sample so that the sample can be exposed by the electron beam exposure assembly and the laser direct-write assembly in sequence.
2. The lithographic direct write micro-nano machining apparatus according to claim 1, wherein the electron beam exposure assembly comprises: the first working cavity is internally provided with an electron gun for carrying out electron beam exposure on the sample; the first sample chamber is communicated with the first working cavity, and the conveying guide rail penetrates into the first sample chamber.
3. The lithographic direct write micro-nano machining apparatus according to claim 2, wherein the electron beam exposure assembly further comprises: the first workbench is arranged in the first sample chamber, the conveying guide rail is connected with the first workbench, and the first workbench is used for placing the sample; And the electron optical lens barrel is arranged between the electron gun and the first workbench and is used for processing electron beams emitted by the electron gun.
4. The lithographic direct write micro-nano machining apparatus of claim 3, wherein the electron beam exposure assembly further comprises a vacuum extraction member in communication with the first sample chamber to extract a vacuum from the first sample chamber.
5. The lithographic direct write micro nano machining apparatus according to any one of claims 2 to 4, wherein the laser direct write assembly comprises: the second working cavity is internally provided with a laser emission part for performing laser direct writing on the sample; the second sample chamber is communicated with the second working cavity, and the conveying guide rail penetrates into the second sample chamber.
6. The lithographic direct write micro nano machining apparatus according to claim 5, wherein the laser direct write assembly further comprises: The second workbench is arranged in the second sample chamber, the conveying guide rail is connected with the second workbench, and the second workbench is used for placing the sample; and the laser processing part is arranged between the laser emitting part and the second workbench to process the laser emitted by the laser emitting part.
7. The lithographic direct-write micro-nano machining apparatus according to claim 6, wherein the laser emitting section includes: a collimated laser for aligning a sample; A writing laser for writing a pattern of the lithography; the laser processing section includes: the reflecting mirror is used for reflecting laser emitted by the laser so as to realize deflection of a light path and change the direction of the light path; And the beam splitting prism is used for splitting laser.
8. The lithographic direct-write micro-nano processing apparatus of claim 7, further comprising a sample transfer chamber disposed at an end of the second sample chamber remote from the connection cavity, the sample transfer chamber in communication with the second sample chamber, the transfer rail penetrating the sample transfer chamber.
9. The lithographic direct write micro-nano machining apparatus according to claim 8, wherein the electron beam exposure assembly further comprises a first baffle movably mounted at an end of the first sample chamber adjacent to the connecting cavity to separate the first sample chamber and the connecting cavity; the laser direct writing assembly further comprises a second baffle plate, wherein the second baffle plate is movably installed at one end, close to the connecting cavity, of the second sample chamber so as to separate the second sample chamber from the connecting cavity.
10. A lithographic direct-write micro-nano processing method, applied to the lithographic direct-write micro-nano processing device according to any one of claims 1 to 9, characterized by comprising the steps of: dividing the micro-nano pattern to be processed on the sample into a first pattern and a second pattern according to a preset critical line width, wherein the line width of the first pattern is smaller than or equal to the critical line width, and the line width of the second pattern is larger than the critical line width; spin-coating a resist used by both electron beams and ultraviolet light on the surface of a substrate of the sample at one time, and performing soft baking; Loading the sample onto the transfer rail, evacuating the first sample chamber using the vacuum extractor, transporting the sample to the first stage through the transfer rail, and performing electron beam exposure of the first pattern on the sample on the first stage; Moving the sample after the electron beam exposure is completed to a second workbench through the conveying guide rail, completing the alignment between the laser direct writing pattern and the exposed electron beam pattern through the laser emitting part, and then performing the laser direct writing exposure of the second pattern on the same layer of resist; after the sample has completed all exposure steps, the sample is taken out of the apparatus, developed once, and then post-processed and pattern transferred as required.

Description

Photoetching direct-writing micro-nano processing equipment and processing method Technical Field The invention relates to the technical field of micro-nano processing and manufacturing, in particular to a lithography direct writing micro-nano processing device and a processing method. Background In semiconductor manufacturing, in order to achieve complex and diverse process requirements, multiple photolithography needs to be performed on a device, and simultaneously, micrometer-scale and nanometer-scale lines exist in a pattern generated by device photolithography, and the micrometer-scale and nanometer-scale lines are processed by photolithography respectively using different technologies in the prior art. Nanoscale pattern fabrication is performed using electron beam exposure techniques, and microscale pattern fabrication is performed using laser direct writing techniques. The electron beam exposure technology directly depicts patterns on the surface of the resist by focusing high-energy electron beams, thereby realizing high-precision graphic depiction and customizable processing of micro-nano structures, breaking through the diffraction limit of photoetching and being widely applied to nano-scale scientific research and leading-edge micro-nano device prototype development. Although electron beam exposure has advantages of no need of mask plate, applicability to nano-scale pattern manufacture, etc., the mode of using small beam spots for point-by-point scanning of electron beam exposure causes it to be inferior to optical lithography in terms of speed and yield. The use of this pattern to pattern large areas of micron-sized features results in wasted time and performance. The laser direct writing is a process for manufacturing patterns on the surface by using a laser light source, and is widely applied to micro-nano structure manufacturing in the fields of scientific research and industry. The method is characterized by high processing speed, resolution up to submicron level and no mask plate, but has the disadvantage that nano-level pattern production cannot be performed. Therefore, the mixed photoetching by adopting electron beam exposure and laser direct writing matching not only utilizes the advantage of the electron beam exposure that nano-scale pattern manufacture can be carried out, but also improves the defect of low exposure speed. However, if pattern lithography of different sizes is required by combining two techniques, two spin-coating resists, loading and unloading samples at least twice, and developing twice are required, resulting in a significant increase in manufacturing costs and an increase in processing cycle time. As described in the patent application publication number CN119045291 a. Meanwhile, the process needs to transfer samples between two independent devices, which may cause problems of error accumulation, difficult guarantee of alignment precision, easy sample pollution and the like, and result in reduced yield. Accordingly, the prior art is still in need of improvement and development. Disclosure of Invention In view of the defects of the prior art, the application aims to provide a photoetching direct writing micro-nano processing device and a processing method, and the problems that the precision cannot be ensured and the sample is polluted due to the fact that the sample is transferred among different devices are avoided by sequentially carrying out different levels of exposure processing on the sample in the device, so that the multiple loading and unloading and spin coating development are avoided, the efficiency is improved, and the like. The technical scheme adopted by the application for solving the technical problems is as follows, the photoetching direct writing micro-nano processing equipment comprises: An electron beam exposure assembly for performing electron beam exposure on the first pattern on the sample; The laser direct-write assembly is used for carrying out laser direct-write exposure on a second pattern on the sample: The connecting cavity is communicated with the electron beam exposure assembly and the laser direct writing assembly; The conveying guide rail penetrates into the laser direct-write assembly, the connecting cavity and the electron beam exposure assembly in sequence, and is used for conveying the sample so that the sample can be exposed by the electron beam exposure assembly and the laser direct-write assembly in sequence. Further, the electron beam exposure assembly includes: the first working cavity is internally provided with an electron gun for carrying out electron beam exposure on the sample; the first sample chamber is communicated with the first working cavity, and the conveying guide rail penetrates into the first sample chamber. Further, the electron beam exposure assembly further includes: the first workbench is arranged in the first sample chamber, the conveying guide rail is connected with the first workbench, and the first wor