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CN-121996007-A - Voltage-stabilized power supply circuit, radio frequency energy receiving device and radio frequency signal communication equipment

CN121996007ACN 121996007 ACN121996007 ACN 121996007ACN-121996007-A

Abstract

The application discloses a stabilized power supply circuit, a radio frequency energy receiving device and radio frequency signal communication equipment, wherein the stabilized power supply circuit comprises a first MOS tube, a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube, a static bias current source and a dynamic bias current source, the static bias current source is used for providing a static first working current for the stabilized power supply circuit, and the dynamic bias current source is used for providing a dynamic second working current for the stabilized power supply circuit when a direct current signal obtained by converting radio frequency signals is larger than a preset value. When the input energy of the direct current signal is larger, the static bias current source and the dynamic bias current source supply power to the stabilized voltage supply circuit simultaneously, and the dynamic bias current source increases along with the increase of the input energy, so that the response speed of the stabilized voltage supply circuit in the case of large input energy is increased, and the output voltage can be restored to be stable in a faster time.

Inventors

  • SHEN JINPENG
  • GE BINJIE
  • YONG SHANSHAN
  • LI YAN
  • YU HANG

Assignees

  • 深圳北理莫斯科大学

Dates

Publication Date
20260508
Application Date
20241104

Claims (10)

  1. 1. The voltage-stabilizing power supply circuit is characterized by comprising an input connecting end, an output connecting end, a reference connecting end, a first MOS tube P 1 , a second MOS tube P 2 , a third MOS tube P 3 , a fourth MOS tube M 1 , a fifth MOS tube M 2 , a static bias current source I 1 and a dynamic bias current source I 2 ; The input connection end is used for inputting a voltage limiting electric signal V LIM , the voltage limiting electric signal V LIM is obtained by limiting the voltage of a direct current signal V REC , the direct current signal V REC is obtained by converting the energy of a radio frequency signal V RF , and the voltage stabilizing power supply circuit is used for stabilizing the voltage of the voltage limiting electric signal V LIM ; The output connection end is used for outputting an operating electric signal V DD after the voltage-limiting electric signal V LIM is stabilized; the reference connection end is used for inputting a reference voltage signal V REF with a preset voltage value; The grid electrode of the first MOS tube P 1 is electrically connected with the grid electrode of the second MOS tube P 2 , the source electrode of the first MOS tube P 1 is connected with the input connecting end, and the drain electrode of the first MOS tube P 1 is electrically connected with the drain electrode of the fourth MOS tube M 1 ; The source electrode of the second MOS tube P 2 is connected with the input connecting end, and the drain electrode of the second MOS tube P 2 is electrically connected with the grid electrode of the first MOS tube P 1 ; The grid electrode of the third MOS tube P 3 is electrically connected with the grid electrode of the first MOS tube P 1 , the source electrode of the third MOS tube P 3 is connected with the input connecting end, and the drain electrode of the third MOS tube P 3 is connected with the output connecting end; The grid electrode of the fourth MOS tube M 1 is connected with the reference connecting end, the source electrode of the fourth MOS tube M 1 is electrically connected with the static bias current source I 1 and the dynamic bias current source I 2 , the grid electrode of the fifth MOS tube M 2 is connected with the output connecting end, the drain electrode of the fifth MOS tube M 2 is connected with the grid electrode of the first MOS tube P 1 , and the source electrode of the fifth MOS tube M 2 is electrically connected with the static bias current source I 1 and the dynamic bias current source I 2 ; The static bias current source I 1 is connected between the source of the fourth MOS transistor M 1 and the source of the fifth MOS transistor M 2 and ground, and is configured to provide a static first operating current I b1 , where the first operating current I b1 is a preset first fixed value, and the preset first fixed value is related to the reference voltage signal V REF ; The dynamic bias current source I 2 is connected between the source of the fourth MOS transistor M 1 and the source of the fifth MOS transistor M 2 and ground, and is configured to provide a dynamic second operating current I b2 when the dc signal input by the input connection terminal is greater than a preset second fixed value, where the dynamic second operating current I b2 is related to the preset second fixed value.
  2. 2. The stabilized power supply circuit as claimed in claim 1, further comprising a unity gain buffer connected between the gate of the third MOS transistor P 3 and the gate of the first MOS transistor P 1 .
  3. 3. The regulated power supply circuit of claim 1, further comprising a first capacitor C 1 and/or a second capacitor C 2 ; The first capacitor C 1 is connected between the drain electrode of the third MOS transistor P 3 and the grid electrode of the first MOS transistor P 1 ; a second capacitor C 2 is connected between the output connection and ground.
  4. 4. The stabilized power supply circuit as claimed in claim 1, wherein the first MOS transistor P 1 , the second MOS transistor P 2 and the third MOS transistor P 3 are P-type MOS transistors, and the fourth MOS transistor M 1 and the fifth MOS transistor M 2 are N-type MOS transistors.
  5. 5. The voltage-stabilized power supply circuit as claimed in claim 1, wherein the voltage-limiting electric signal V LIM is obtained by voltage-limiting the dc electric signal V REC by a voltage-limiting circuit; The voltage limiting circuit comprises a voltage limiting first connecting end Q 1 , a voltage limiting second connecting end Q 2 , a voltage limiting first MOS tube M P1 , a voltage limiting second MOS tube M P2 , a voltage limiting third MOS tube M P3 , a voltage limiting fourth MOS tube M P4 , a voltage limiting fifth MOS tube M P5 , a first resistor R 1 and a second resistor R 2 ; The voltage-limiting first connection end Q 1 is used for inputting the direct current signal V REC , the voltage-limiting second connection end Q 2 is used for outputting the voltage-limiting signal V LIM , and the voltage-limiting first connection end Q 1 and the voltage-limiting second connection end Q 2 are electrically connected; The grid electrode and the drain electrode of the voltage limiting first MOS tube M P1 are connected with the voltage limiting first connecting end Q 1 ; The grid electrode and the drain electrode of the voltage limiting second MOS tube M P2 are connected with the source electrode of the voltage limiting first MOS tube M P1 ; The grid electrode and the drain electrode of the voltage limiting third MOS tube M P3 are connected with the source electrode of the voltage limiting second MOS tube M P2 , and the source electrode of the voltage limiting third MOS tube M P3 is grounded; The grid electrode of the voltage limiting fourth MOS tube M P4 is connected with the grid electrode of the voltage limiting third MOS tube M P3 , and the source electrode of the voltage limiting fourth MOS tube M P4 is grounded; The grid electrode of the voltage limiting fifth MOS tube M P5 is connected with the grid electrode of the voltage limiting third MOS tube M P3 , and the source electrode of the voltage limiting fifth MOS tube M P5 is grounded; One end of the first resistor R 1 is connected with the drain electrode of the voltage-limiting fourth MOS tube M P4 , and the other end of the first resistor R 1 is connected with the voltage-limiting second connecting end Q 2 ; One end of the second resistor R 2 is connected with the drain electrode of the voltage-limiting fifth MOS tube M P5 , and the other end of the second resistor R 2 is connected with the voltage-limiting second connecting end Q 2 .
  6. 6. The stabilized power supply circuit as claimed in claim 5, wherein said dynamic bias current source I 2 comprises a first dynamic connection terminal Q 3 , a second dynamic connection terminal Q 4 , and a dynamic first MOS transistor M P6 ; the first dynamic connection end Q 3 is connected with the source electrode of the fifth MOS tube M 2 ; the second dynamic connection end Q 4 is connected with the grid electrode of the voltage limiting third MOS tube M P3 ; The grid electrode of the dynamic first MOS tube M P6 is connected with the second dynamic connecting end Q 4 , the drain electrode of the dynamic first MOS tube M P61 is connected with the first dynamic connecting end Q 3 , and the source electrode of the dynamic first MOS tube M P61 is grounded.
  7. 7. The regulated power supply circuit of claim 6, wherein said voltage limiting first MOS transistor M P1 , voltage limiting second MOS transistor M P2 , voltage limiting third MOS transistor M P3 , voltage limiting fourth MOS transistor M P4 , voltage limiting fifth MOS transistor M P5 and dynamic first MOS transistor M P6 are P-type MOS transistors.
  8. 8. The stabilized power supply circuit as claimed in claim 1, wherein the static bias current source I 1 includes a first static connection terminal O 1 , a second static connection terminal O 2 , a static first MOS transistor M N1 , and a static second MOS transistor M N2 ; The first static connection terminal O 1 is used for inputting the reference voltage signal V REF ; The second static connection end O 2 is used for connecting with the source electrode of the fifth MOS transistor M 2 ; The grid electrode and the drain electrode of the static first MOS tube M N1 are connected with the first static connecting end O 1 , and the source electrode of the static first MOS tube M N1 is grounded; The grid electrode of the static second MOS tube M N2 is connected with the first static connecting end O 1 , the drain electrode of the static second MOS tube M N2 is connected with the second static connecting end O 2 , and the source electrode of the static second MOS tube M N2 is grounded.
  9. 9. A radio frequency energy receiving device comprising a regulated power supply circuit as claimed in any one of claims 1 to 8.
  10. 10. A radio frequency signal communication device comprising a radio frequency energy receiving means as claimed in claim 9.

Description

Voltage-stabilized power supply circuit, radio frequency energy receiving device and radio frequency signal communication equipment Technical Field The application relates to the technical field of radio frequency energy reception, in particular to a regulated power supply circuit, a radio frequency energy receiving device and radio frequency signal communication equipment. Background The radio frequency signal communication equipment comprising the radio frequency energy receiving device captures energy from radio frequency signals to acquire a working power supply, and the radio frequency energy receiving device is widely applied to low-power consumption wireless sensor network equipment and Internet of things equipment, so that the use of batteries can be reduced, and the material and maintenance cost is reduced. The main factor affecting whether the rf energy receiving apparatus acquires energy stably is the variation of the rf signal strength. However, in an application scenario requiring the radio frequency signal to perform data communication, even if the radio frequency signal strength can be kept stable, because carrier communication (modulating the information signal onto a radio frequency signal carrier with a fixed frequency to implement communication transmission of the signal) is required to be performed through the radio frequency signal, electric energy obtained by the radio frequency energy receiving device inevitably changes in the carrier communication process, so that the stability of energy obtained by the radio frequency energy receiving device is reduced. Disclosure of Invention The application provides a regulated power supply circuit which is used for improving the stability of electric energy voltage obtained by converting a radio frequency signal by a radio frequency energy receiving device. According to a first aspect, in an embodiment, a regulated power supply circuit is provided, including an input connection end, an output connection end, a reference connection end, a first MOS transistor P 1, a second MOS transistor P 2, a third MOS transistor P 3, a fourth MOS transistor M 1, a fifth MOS transistor M 2, a static bias current source I 1, and a dynamic bias current source I 2; The input connection end is used for inputting a voltage limiting electric signal V LIM, the voltage limiting electric signal V LIM is obtained by limiting the voltage of the direct current electric signal V REC, the direct current electric signal V REC is obtained by converting energy of a radio frequency signal V RF, and the voltage stabilizing power supply circuit is used for stabilizing the voltage of the voltage limiting electric signal V LIM; The output connection end is used for outputting an operating electric signal V DD after the piezoelectric signal V LIM is stabilized; the reference connection end is used for inputting a reference voltage signal V REF with a preset voltage value; The grid electrode of the first MOS tube P 1 is electrically connected with the grid electrode of the second MOS tube P 2, the source electrode of the first MOS tube P 1 is connected with the input connecting end, and the drain electrode of the first MOS tube P 1 is electrically connected with the drain electrode of the fourth MOS tube M 1; The source electrode of the second MOS tube P 2 is connected with the input connecting end, and the drain electrode of the second MOS tube P 2 is electrically connected with the grid electrode of the first MOS tube P 1; The grid electrode of the third MOS tube P 3 is electrically connected with the grid electrode of the first MOS tube P 1, the source electrode of the third MOS tube P 3 is connected with the input connecting end, and the drain electrode of the third MOS tube P 3 is connected with the output connecting end; The grid electrode of the fourth MOS tube M 1 is connected with the reference connecting end, the source electrode of the fourth MOS tube M 1 is electrically connected with the static bias current source I 1 and the dynamic bias current source I 2, the grid electrode of the fifth MOS tube M 2 is connected with the output connecting end, the drain electrode of the fifth MOS tube M 2 is connected with the grid electrode of the first MOS tube P 1, and the source electrode of the fifth MOS tube M 2 is electrically connected with the static bias current source I 1 and the dynamic bias current source I 2; The static bias current source I 1 is connected between the gate of the fourth MOS transistor M 1 and the gate of the fifth MOS transistor M 2 and ground, and is configured to provide a static first working current I b1 to the output connection end, where the first working current I b1 is a preset first fixed value, and the preset first fixed value is related to the reference voltage signal V REF; The dynamic bias current source I 2 is connected between the source of the fourth MOS transistor M 1 and the source of the fifth MOS transistor M 2 and ground, and is config