CN-121997557-A - Constant temperature design method for compact range reflecting surface

Abstract

The invention discloses a compact field reflecting surface constant temperature design method, which belongs to the technical field of compact field reflecting surface design, and designs a compact field reflecting surface constant temperature device, wherein the compact field reflecting surface constant temperature device synchronously designs the appearance and the size of the compact field reflecting surface constant temperature device at the beginning of the design of a reflecting surface, a vapor chamber with capillary effect and conducting liquid is arranged in the compact field reflecting surface constant temperature device, a semiconductor chip and a temperature sensor are arranged on the vapor chamber every 10cm-30cm, a temperature-voltage feedback circuit matrix is designed, and the positive electrode and the negative electrode of all the semiconductor chips and a probe interface of the temperature sensor are connected into a control matrix. The invention designs a compact range constant temperature technology, in particular to a compact range reflecting surface constant temperature technology which greatly reduces energy consumption compared with the traditional darkroom constant temperature technology, and by the technology, under the condition of reducing the energy consumption, the constant temperature of the compact range reflecting surface is realized, so that the deformation of a metal reflecting surface is reduced, the surface accuracy of the reflecting surface is ensured, and the stability of the amplitude-phase characteristic of a dead zone is ensured.

Inventors

• FAN BOHAO
• MA YONGGUANG
• DONG YUQING

Assignees

• 北京无线电计量测试研究所

Dates

Publication Date

20260508

Application Date

20251226

Claims (6)

1. 1. A compact range reflecting surface constant temperature design method, which is characterized in that, The compact-range reflecting surface constant temperature device is designed to synchronously design the appearance and the size of the reflecting surface at the beginning of the design of the reflecting surface, and at least covers the central part of the reflecting surface; a vapor chamber with capillary effect and conducting liquid is arranged in the compact field reflecting surface constant temperature device. A semiconductor chip and a temperature measuring sensor are arranged on the soaking plate every 10cm-30cm, and the temperature generated by the contact surface of the semiconductor chip and the soaking plate is controlled by controlling the current and the direction; designing a temperature-voltage feedback circuit matrix, connecting the anode and cathode of all semiconductor chips and the probe interface of the temperature measuring sensor into a control matrix, and controlling the current magnitude and direction of the semiconductor chips at the corresponding position points according to the temperature of each position point and the expected temperature by the control matrix; Finally, a heat sink fin is disposed on the back side of each semiconductor wafer.
2. 2. The method for designing compact-range reflecting surface constant temperature according to claim 1, wherein the number and the distance of the semiconductor wafers are calculated and judged comprehensively according to the construction position of the compact-range darkroom, the expected temperature possibly reached, the upper power limit of the semiconductor wafers, the heat conduction capability of the vapor chamber and the temperature difference requirement of the reflecting surface.
3. 3. The compact field reflecting surface constant temperature design method according to claim 2, wherein the compact field reflecting surface constant temperature device is made of copper.
4. 4. A compact-range reflector constant temperature design method according to claim 3, wherein the phase change sheet is used to fill the gap between the vapor chamber and the back of the reflector.
5. 5. The method of claim 4, wherein a heat sink is provided on the back side of the semiconductor die if the power of the semiconductor die is high.
6. 6. The method of claim 5, wherein the heat sink is a radiator fan.

Description

Constant temperature design method for compact range reflecting surface Technical Field The invention belongs to the technical field of compact range reflecting surface design, and particularly relates to a compact range reflecting surface constant temperature design method. Background The compact range reflecting surface is usually made of metal, the size of a dead zone of the compact range reflecting surface is positively correlated with the size range of the reflecting surface, the requirement on the precision of the reflecting surface is further improved along with the improvement of the frequency requirement of the compact range, the surface precision basically achieved in the industry at present is that the root mean square deviation value is less than 50 microns, and the precision requirement on the numerical value is further improved along with the improvement of the frequency. After the surface processing precision is ensured, the volume of the reflecting surface is inevitably changed along with the temperature change due to the fact that the reflecting surface is made of metal, so that the surface precision of the reflecting surface with the diameter of more than 10 meters is seriously deviated from the processing precision due to the temperature change of 10 degrees at present, and the compact field calibration standard has strict requirements on the temperature during testing. In actual use, for a large compact range system, because the darkroom is large in volume, a large amount of energy is consumed when the whole darkroom is controlled to be constant in temperature in summer and winter, a plurality of units prefer that the accuracy of the reflecting surface is reduced, and the reflecting surface temperature is not maintained in a temperature range required by specifications. The foregoing is not necessarily a prior art, and falls within the technical scope of the inventors. Disclosure of Invention In order to solve the above problems, an object of the present invention is to provide a compact field reflecting surface constant temperature design method, which relates to a compact field constant temperature technology, and in particular, to a compact field reflecting surface constant temperature technology that greatly reduces energy consumption compared with a traditional darkroom constant temperature technology, by which constant temperature of a compact field reflecting surface is realized under the condition of reduced energy consumption, thereby reducing deformation of a metal reflecting surface, ensuring surface accuracy of the reflecting surface, and thus ensuring stability of static amplitude-phase characteristics. In order to achieve the above-mentioned object, the present invention provides a compact field reflecting surface constant temperature design method, and designs a compact field reflecting surface constant temperature device, wherein the compact field reflecting surface constant temperature device designs its shape and size at the beginning of the design of the reflecting surface synchronously, and needs to cover at least the center part of the reflecting surface. A vapor chamber with capillary effect and conducting liquid is arranged in the compact field reflecting surface constant temperature device. And a semiconductor piece and a temperature measuring sensor are arranged on the soaking plate every 10cm-30cm, and the temperature generated by the contact surface of the semiconductor piece and the soaking plate is controlled by controlling the current and the direction. And designing a temperature-voltage feedback circuit matrix, connecting the anode and cathode of all the semiconductor chips and the probe interface of the temperature measuring sensor into a control matrix, and controlling the current magnitude and direction of the semiconductor chips at the corresponding position points according to the temperature of each position point and the expected temperature by the control matrix. Finally, a heat sink fin is disposed on the back side of each semiconductor wafer. Preferably, the number and the spacing of the semiconductor wafers need to be comprehensively calculated and judged according to the construction position of the compact range darkroom, the expected temperature possibly reached, the upper power limit of the semiconductor wafers, the heat conduction capability of the vapor chamber and the temperature difference requirement of the reflecting surface. Preferably, the compact range reflecting surface constant temperature device is made of copper. Preferably, the phase change sheet is used to fill the gap between the vapor chamber and the back of the reflective surface. Preferably, if the power of the semiconductor wafer is large, a heat sink is provided on the back surface thereof. Preferably, the heat dissipating device is a heat dissipating fan. The constant temperature design of the compact range reflecting surface provided by the invention can bring the foll