CN-121997627-A - Construction method and device of IGBT electric-thermal-force coupling transient model

CN121997627ACN 121997627 ACN121997627 ACN 121997627ACN-121997627-A

Abstract

The embodiment of the specification provides a construction method and a construction device of an IGBT electric-thermal-force coupling transient model, wherein the method comprises the steps of obtaining roughness parameters of a contact interface of a core contact component of an IGBT, calculating contact resistance and contact thermal resistance of the contact interface under specific pressure based on the roughness parameters, establishing a geometric model according to the size of the IGBT, generating a finite element model, setting thermal contact and electric contact between contact pairs according to the contact resistance and the contact thermal resistance in the finite element model, configuring boundary conditions for an electric field, a thermal field and a structural mechanical field in the finite element model, establishing a bidirectional coupling relation among the electric field, the thermal field and the structural mechanical field to form a coupling model, and carrying out transient solving on the coupling model to obtain dynamic response of the IGBT under the coupling action of multiple physical fields. The micro morphology and the macroscopic electricity are obtained by actually measuring the roughness of the contact surface and quantitatively calculating the interface contact parameters Re The force behaviors are associated, and the fine description of the elastic crimping interface characteristics is realized.

Inventors

LIU HAOYU
GAO SHUGUO
WANG LILI
Dai Lujian
XIANG CHENMENG
GUO MENG
Fan Ruidie
GENG JIANGHAI
LIU YUNPENG

Assignees

国网河北省电力有限公司电力科学研究院
国家电网有限公司

Dates

Publication Date: 20260508
Application Date: 20251209

Claims (10)

1. The construction method of the IGBT electricity-heat-force coupling transient model is characterized by comprising the following steps of: Acquiring a roughness parameter of a contact interface of a core contact component of the IGBT, and calculating contact resistance and contact thermal resistance of the contact interface under specific pressure based on the roughness parameter; Establishing a geometric model according to the size of the IGBT, and generating a finite element model, wherein thermal contact and electric contact between a contact pair are set according to the contact resistance and the contact thermal resistance in the finite element model; Configuring boundary conditions for an electrical field, a thermal field and a structural mechanical field in the finite element model, and establishing a bidirectional coupling relationship among the electrical field, the thermal field and the structural mechanical field to form a coupling model; And carrying out transient solution on the coupling model to obtain the dynamic response of the IGBT under the coupling action of multiple physical fields.
2. The method of claim 1, wherein obtaining a roughness parameter of a core contact component contact interface of the IGBT comprises: and using a surface roughness tester to measure the roughness of the contact surface of at least one component selected from the aluminum sheet, the molybdenum sheet, the IGBT chip, the disc spring, the conducting strip and the copper cap of the IGBT, and determining the roughness parameter.
3. The method of claim 1, wherein calculating contact resistance and contact thermal resistance for each contact interface at a particular pressure comprises: and calculating based on the contact pressure, the material microhardness, the roughness parameter and the surface relative slope, and determining the contact resistance and the contact thermal resistance.
4. The method of claim 1, wherein configuring boundary conditions for the electrical field comprises: The ground potential is provided on the emitter side, and current excitation or voltage excitation is applied on the collector side.
5. The method of claim 1, wherein configuring boundary conditions for the thermal field comprises: And setting a convection heat transfer coefficient on the surface contacted with the external heat radiation environment.
6. The method of claim 1, wherein configuring boundary conditions for the structural mechanical field comprises: A load simulating a clamping force is applied to the collector side surface, a fixed constraint is applied to the emitter side surface, and a displacement constraint is applied to the disc spring.
7. The method of claim 1, wherein the bi-directional coupling relationship comprises: joule heat generated in the electrical field is input to the thermal field as a heat source; The temperature change of the thermal field influences the stress and deformation of the structural mechanical field through a thermal expansion effect; and the deformation and contact pressure change of the structural mechanical field are used for feeding back and adjusting the contact resistance and contact thermal resistance of the contact interface, so that the electric field and the thermal field are influenced.
8. The device for constructing the IGBT electricity-heat-force coupling transient model is characterized by comprising the following components: the parameter acquisition module is configured to acquire a roughness parameter of a core contact component contact interface of the IGBT, and calculate contact resistance and contact thermal resistance of the contact interface under specific pressure based on the roughness parameter; a model building module configured to build a geometric model according to the dimensions of the IGBT, generate a finite element model in which thermal and electrical contacts between a contact pair are set according to the contact resistance and the contact thermal resistance; A boundary condition module configured to configure boundary conditions for an electrical field, a thermal field, and a structural mechanical field in the finite element model, and establish a bi-directional coupling relationship between the electrical field, the thermal field, and the structural mechanical field to form a coupling model; And the model solving module is configured to carry out transient solving on the coupling model to obtain the dynamic response of the IGBT under the multi-physical field coupling effect.
9. A computing device, comprising: A memory and a processor; The memory is configured to store computer executable instructions, and the processor is configured to execute the computer executable instructions, which when executed by the processor, implement the steps of the method for constructing an IGBT electro-thermo-mechanical coupling transient model according to any one of claims 1 to 7.
10. A computer-readable storage medium storing computer-executable instructions which, when executed by a processor, implement the steps of the method of constructing an IGBT electro-thermo-mechanical coupling transient model according to any one of claims 1 to 7.

Description

Construction method and device of IGBT electric-thermal-force coupling transient model Technical Field The embodiment of the specification relates to the technical field of modeling and simulation of electronic devices, in particular to a construction method of an IGBT electricity-heat-force coupling transient model. Background The reliability of a crimping Insulated Gate Bipolar Transistor (IGBT) serving as a core device in the high-voltage high-power field is highly dependent on complex coupling behaviors of internal electric, thermal and force multiple physical fields. In recent years, a certain progress has been made in modeling multiple physical fields of the crimp packaging IGBT, for example, research is carried out by establishing a device-cell multi-level collaborative transient simulation model, revealing a weak failure part and boundary conditions thereof, and solving the problem that the traditional steady state model is difficult to describe a transient coupling failure process. In addition, the analysis of electrothermal distribution by a thermal coupling model or the research of the influence of external pressure on multi-chip current sharing based on switching transient simulation is also studied, and a corresponding encapsulation optimization method is provided. However, the existing studies still have the following significant disadvantages: First, most models focus on rigid crimp packaging structures, and many physical field modeling studies for elastic crimp type IGBTs are extremely lacking. The elastic crimping type IGBT generally adopts elastic elements such as disc springs and the like to realize pressure self-adaptive adjustment, and has intrinsic difference between dynamic mechanical characteristics and a rigid crimping structure. The existing model can not effectively reflect the heat of the elastic element Creep and relaxation behaviors under force coupling and real-time influence of the creep and relaxation behaviors on contact interface pressure are limited when key phenomena such as pressure attenuation, contact degradation and the like caused by temperature circulation in actual working conditions are simulated. Second, existing modeling generally ignores the effect of contact surface roughness on interface electrothermal properties. The actual assembly interface has micro-morphology non-uniformity, and the surface roughness directly influences the size and distribution of contact resistance and contact thermal resistance. In the prior art, the interface is assumed to be ideal smooth contact, so that deviation is generated when current distribution, heat conduction and local temperature rise are calculated, and the influence of interface contact behavior on the whole electrothermal stress of the device cannot be accurately described. Thus, a better solution is needed. Disclosure of Invention In view of this, the present embodiment provides a method for constructing an IGBT electro-thermo-mechanical coupling transient model. One or more embodiments of the present disclosure relate to an apparatus for constructing an IGBT electro-thermal-mechanical coupling transient model, a computing device, a computer-readable storage medium, and a computer program, to solve the technical drawbacks of the prior art. According to a first aspect of embodiments of the present specification, there is provided a method for constructing an IGBT electro-thermo-mechanical coupling transient model, including: Acquiring a roughness parameter of a contact interface of a core contact component of the IGBT, and calculating contact resistance and contact thermal resistance of the contact interface under specific pressure based on the roughness parameter; Establishing a geometric model according to the size of the IGBT, generating a finite element model, and setting thermal contact and electric contact between contact pairs according to contact resistance and contact thermal resistance in the finite element model; configuring boundary conditions for an electrical field, a thermal field and a structural mechanical field in a finite element model, and establishing a bidirectional coupling relation among the electrical field, the thermal field and the structural mechanical field to form a coupling model; And carrying out transient solution on the coupling model to obtain the dynamic response of the IGBT under the coupling action of multiple physical fields. In one possible implementation, acquiring the roughness parameter of the core contact component contact interface of the IGBT includes: And (3) using a surface roughness tester to measure the roughness of the contact surface of at least one component selected from the aluminum sheet, the molybdenum sheet, the IGBT chip, the disc spring, the conductive sheet and the copper cap of the IGBT, and determining the roughness parameter. In one possible implementation, calculating the contact resistance and contact thermal resistance of each contact interface at a pa