CN-121997883-A - OPC correction method, OPC correction device, OPC correction medium and electronic equipment

CN121997883ACN 121997883 ACN121997883 ACN 121997883ACN-121997883-A

Abstract

The disclosure relates to the technical field of semiconductor masks, and provides an OPC correction method, an OPC correction device, an OPC correction medium and an OPC correction electronic device, wherein a storage area layout is determined from an original layout in a memory; determining a storage unit layout corresponding to a storage unit according to a storage area layout, determining whether a storage unit template matched with the storage unit layout is stored in a database, determining the position of the storage unit layout when the storage unit template matched with the storage unit layout is stored in the database, taking the mask layout corresponding to the storage unit template as the mask layout corresponding to the storage unit layout, determining the position of the storage unit layout when the storage unit template matched with the storage unit layout is not stored in the database, determining the mask layout corresponding to the storage unit layout according to the physical characteristics of the storage unit layout, and obtaining the mask layout of the storage area according to the position of the storage unit layout in the storage area and the corresponding mask layout.

Inventors

WANG SHUANG
ZHANG GUOQIAN
Zhuang Boqing

Assignees

成都新紫光半导体科技有限公司

Dates

Publication Date: 20260508
Application Date: 20241104

Claims (10)

1. An OPC correction method, characterized in that the OPC correction method comprises: Determining a storage area layout corresponding to a storage area from an original layout in a memory, wherein the storage area comprises a plurality of storage units; determining a storage unit layout corresponding to each storage unit according to the storage area layout; Determining whether a storage unit template matched with the storage unit template is stored in a database aiming at each storage unit template, wherein a plurality of storage unit templates and mask templates corresponding to the storage unit templates are stored in the database in advance; Under the condition that a storage unit template matched with the storage unit layout is stored in the database, determining the position of the storage unit layout, and taking a mask layout corresponding to the storage unit template as a mask layout corresponding to the storage unit layout; Determining the position of the memory cell layout under the condition that a memory cell template matched with the memory cell layout is not stored in the database, and determining a mask layout corresponding to the memory cell layout according to the physical characteristics of the memory cell layout; And obtaining the mask layout of the storage area according to the position of the storage unit layout in the storage area and the mask layout corresponding to the storage unit layout.
2. The OPC correction method of claim 1, wherein the physical characteristics include a size and a pattern, and the determining a mask layout corresponding to the memory cell layout according to the physical characteristics of the memory cell layout comprises: comparing the size and the pattern of the memory cell layout with the preset size range and the preset pattern of each memory cell template in a database, wherein the preset size range of the memory cell template is determined according to the standard size of the memory cell template, and the preset pattern of the memory cell template is determined according to the standard pattern of the memory cell template; and when the size of the memory cell layout is in the preset size range of any memory cell template and the pattern of the memory cell layout is consistent with the preset pattern of the memory cell template, taking the mask layout corresponding to the memory cell template as the mask layout corresponding to the memory cell layout, otherwise, determining the target pattern of the memory cell layout according to the size and the pattern of the memory cell layout, and determining the mask layout corresponding to the memory cell layout according to the target pattern.
3. The OPC correction method of claim 1, wherein the physical characteristics include size and pattern, and the determining whether a memory cell template matching the memory cell layout is stored in the database comprises: Comparing the size and pattern of the memory cell layout with the standard size and standard pattern of each memory cell template in the database; And under the condition that the size of the memory cell layout is the same as the standard size of any memory cell template and the pattern of the memory cell layout is consistent with the standard pattern of the memory cell template, determining that the memory cell template matched with the memory cell layout is stored in the database, otherwise, determining that the memory cell template matched with the memory cell layout is not stored in the database.
4. The OPC correction method of claim 1, wherein the OPC correction method further comprises, after determining the position of the memory cell layout in the case where the memory cell template matching the memory cell layout is not stored in the database: And reporting the position of the memory cell layout.
5. An OPC correction apparatus, characterized in that the OPC correction apparatus comprises: The first processing module is configured to determine a storage area layout corresponding to a storage area from the original layout in the memory, wherein the storage area comprises a plurality of storage units; the second processing module is configured to determine a storage unit layout corresponding to each storage unit according to the storage area layout; The third processing module is configured to determine whether a storage unit template matched with the storage unit layout is stored in a database aiming at each storage unit layout, wherein a plurality of storage unit templates and mask layouts corresponding to each storage unit template are stored in the database in advance; the fourth processing module is configured to determine the position of the storage unit layout and take the mask layout corresponding to the storage unit template as the mask layout corresponding to the storage unit layout under the condition that the storage unit template matched with the storage unit layout is stored in the database; A fifth processing module, configured to determine a position of the memory cell layout and determine a mask layout corresponding to the memory cell layout according to physical characteristics of the memory cell layout when a memory cell template matched with the memory cell layout is not stored in the database; And the sixth processing module is configured to obtain the mask layout of the storage area according to the position of the memory cell layout in the storage area and the mask layout corresponding to the memory cell layout.
6. The OPC correction apparatus of claim 5 wherein the physical characteristics comprise size and pattern, the fifth processing module comprises: The first sub-processing module is configured to compare the size and the pattern of the memory cell layout with the preset size range and the preset pattern of each memory cell template in a database respectively, wherein the preset size range of the memory cell template is determined according to the standard size of the memory cell template, and the preset pattern of the memory cell template is determined according to the standard pattern of the memory cell template; And the second sub-processing module is configured to take the mask layout corresponding to the storage unit template as the mask layout corresponding to the storage unit template when the size of the storage unit template is in the preset size range of any storage unit template and the pattern of the storage unit template is consistent with the preset pattern of the storage unit template, otherwise, determining the target pattern of the storage unit template according to the size and the pattern of the storage unit template, and determining the mask layout corresponding to the storage unit template according to the target pattern.
7. The OPC correction apparatus of claim 5 wherein the physical characteristics comprise size and pattern and the third processing module comprises: the third sub-processing module is configured to compare the size and the pattern of the memory cell layout with the standard size and the standard pattern of each memory cell template in the database respectively; And the fourth sub-processing module is configured to determine that the storage unit template matched with the storage unit layout is stored in the database under the condition that the size of the storage unit layout is the same as the standard size of any storage unit template and the pattern of the storage unit layout is consistent with the standard pattern of the storage unit template, or determine that the storage unit template matched with the storage unit layout is not stored in the database.
8. The OPC correction device of claim 5, wherein the OPC correction device further comprises: And the seventh processing module is configured to report the position of the memory cell layout.
9. A computer-readable storage medium, on which a computer program is stored, characterized in that the program, when being executed by a processor, implements the steps of the OPC correction method as claimed in any of claims 1-4.
10. An electronic device, comprising: A memory having a computer program stored thereon; A processor for executing the computer program in the memory to implement the steps of the OPC correction method of any of claims 1-4.

Description

OPC correction method, OPC correction device, OPC correction medium and electronic equipment Technical Field The disclosure relates to the technical field of semiconductor masks, and in particular relates to an OPC correction method, an OPC correction device, an OPC correction medium and electronic equipment. Background OPC (Optical Proximity Correction ) is a technique used in the field of semiconductor manufacturing to improve the accuracy of photolithography processes. As the feature sizes of semiconductor devices continue to shrink, the effects of optical proximity effects on image quality during photolithography become more and more pronounced. OPC techniques ensure that the pattern formed on the wafer is consistent with the design intent by adjusting the design pattern to obtain a mask layout to compensate for these effects. The memory area of the memory is typically formed of a series of highly uniform and repetitive arrays of memory cells, which facilitates the use of a uniform, single-repetition pattern processing method during OPC corrections. However, when the memory area is adjusted to a non-uniform cell layout for specific memory requirements or performance optimization considerations, the accuracy of OPC corrections may be reduced if the original OPC correction strategy is still used. Disclosure of Invention In order to overcome the problems in the related art, the present disclosure provides an OPC correction method, apparatus, medium and electronic device. According to a first aspect of embodiments of the present disclosure, there is provided an OPC correction method including: Determining a storage area layout corresponding to a storage area from an original layout in a memory, wherein the storage area comprises a plurality of storage units; determining a storage unit layout corresponding to each storage unit according to the storage area layout; Determining whether a storage unit template matched with the storage unit template is stored in a database aiming at each storage unit template, wherein a plurality of storage unit templates and mask templates corresponding to the storage unit templates are stored in the database in advance; Under the condition that a storage unit template matched with the storage unit layout is stored in the database, determining the position of the storage unit layout, and taking a mask layout corresponding to the storage unit template as a mask layout corresponding to the storage unit layout; Determining the position of the memory cell layout under the condition that a memory cell template matched with the memory cell layout is not stored in the database, and determining a mask layout corresponding to the memory cell layout according to the physical characteristics of the memory cell layout; And obtaining the mask layout of the storage area according to the position of the storage unit layout in the storage area and the mask layout corresponding to the storage unit layout. Optionally, the physical characteristics include a size and a pattern, and determining, according to the physical characteristics of the memory cell layout, a mask layout corresponding to the memory cell layout includes: comparing the size and the pattern of the memory cell layout with the preset size range and the preset pattern of each memory cell template in a database, wherein the preset size range of the memory cell template is determined according to the standard size of the memory cell template, and the preset pattern of the memory cell template is determined according to the standard pattern of the memory cell template; and when the size of the memory cell layout is in the preset size range of any memory cell template and the pattern of the memory cell layout is consistent with the preset pattern of the memory cell template, taking the mask layout corresponding to the memory cell template as the mask layout corresponding to the memory cell layout, otherwise, determining the target pattern of the memory cell layout according to the size and the pattern of the memory cell layout, and determining the mask layout corresponding to the memory cell layout according to the target pattern. Optionally, the physical characteristics include a size and a pattern, and the determining whether the storage unit template matched with the storage unit layout is stored in the database includes: Comparing the size and pattern of the memory cell layout with the standard size and standard pattern of each memory cell template in the database; And under the condition that the size of the memory cell layout is the same as the standard size of any memory cell template and the pattern of the memory cell layout is consistent with the standard pattern of the memory cell template, determining that the memory cell template matched with the memory cell layout is stored in the database, otherwise, determining that the memory cell template matched with the memory cell layout is not stored in the database. Optionally, af