CN-121999825-A - Writing/reading method of magnetic memory cell, peripheral device and magnetic memory array

CN121999825ACN 121999825 ACN121999825 ACN 121999825ACN-121999825-A

Abstract

A method of writing/reading a magnetic memory cell, a peripheral device and a magnetic memory array. The invention provides a writing method of a magnetic storage unit, which comprises the steps of obtaining a corresponding relation between a target address of current writing data and a magnetic storage unit type, and determining a target writing result according to the corresponding relation, wherein the storage unit type comprises a first type and a second type, and the first type storage unit and the second type storage unit at corresponding positions share a source line and a writing bit line. The method for reading the magnetic memory cell comprises the steps of obtaining the corresponding relation between a target address of current read data and the type of the magnetic memory cell, and determining a target read result according to the corresponding relation, wherein the type of the memory cell comprises a first type and a second type, and the first type memory cell and the second type memory cell at corresponding positions share a source line and a read bit line. The invention can effectively reduce the chip area by sharing the bit line and the source line by two magnetic memory units so as to realize the correct data writing of the common-source SOT magnetic memory device.

Inventors

WANG JIALE
GE ZHENYU
YAN YUMING
ZHONG CHAOCHAO
LIU PENG

Assignees

中电海康集团有限公司

Dates

Publication Date: 20260508
Application Date: 20260114

Claims (10)

1. A method of writing to a magnetic memory cell, for use in an SOT magnetic memory array of a common source design, the method comprising: And acquiring a corresponding relation between a target address of current writing data and a magnetic storage unit type, and determining a target writing result according to the corresponding relation, wherein the storage unit type comprises a first type storage unit and a second type storage unit which share a source line and a writing bit line.
2. The method of claim 1, wherein determining the write result from the correspondence comprises: when the type of the magnetic storage unit corresponding to the target address is a first type storage unit, keeping the target writing result identical with the current writing data; and when the type of the magnetic storage unit corresponding to the target address is a second type storage unit, inverting the current writing data to serve as a target writing result.
3. The method of claim 1, wherein determining the write result from the correspondence comprises: Determining 0 as representing data of a first type of storage unit and 1 as representing data of a second type of storage unit; And performing exclusive OR operation on the current writing data and the representing data of the magnetic storage unit type corresponding to the target address to obtain the target writing data.
4. A method of reading a magnetic memory cell, for use in an SOT magnetic memory array of a common source design, the method comprising: and acquiring a corresponding relation between a target address of current read data and a magnetic memory cell type, and determining a target read result according to the corresponding relation, wherein the memory cell type comprises a first type memory cell and a second type memory cell which share a source line and a read bit line at corresponding positions.
5. The method of claim 1, wherein determining the read result from the correspondence comprises: when the type of the magnetic storage unit corresponding to the target address is a first type storage unit, keeping the target reading result the same as the current reading data; And when the type of the magnetic storage unit corresponding to the target address is a second type storage unit, inverting the current read data to serve as a target read result.
6. The method of claim 1, wherein determining the read result from the correspondence comprises: Determining 0 as representing data of a first type of storage unit and 1 as representing data of a second type of storage unit; and performing exclusive OR operation on the current read data and the representation data of the magnetic storage unit type corresponding to the target address to obtain the target read data.
7. A peripheral device for a magnetic memory cell, for use in an SOT magnetic memory array of a common source design, the device comprising: the magnetic memory unit comprises a write control module, a write control module and a write control module, wherein the write control module is used for acquiring the corresponding relation between a target address of current write data and a magnetic memory unit type and determining a write result according to the corresponding relation; or the device comprises: The magnetic memory unit comprises a read control module and a magnetic memory unit type, wherein the read control module is used for acquiring the corresponding relation between a target address of current read data and the magnetic memory unit type and determining a read result according to the corresponding relation, and the memory unit type comprises a first type and a second type.
8. The apparatus of claim 7, wherein the writing module comprises: The synchronous register is used for acquiring a target address type of current writing data and the current writing data, wherein the target address type comprises an odd address represented by 1 and an even address represented by 0, and the current writing data comprises 0 and 1; The exclusive-or operation unit is used for acquiring the target address type and the current writing data and carrying out exclusive-or operation on the target address type and the current writing data; And the write driving unit acquires the operation result of the exclusive-or operation from the exclusive-or operation unit and writes the operation result of the exclusive-or operation into a target address.
9. The apparatus of claim 7, wherein the reading module comprises: the read driving unit is used for acquiring current read data from the target address; the synchronous register is used for acquiring a target address type of current read data and the current read data, wherein the target address type comprises an odd address represented by 1 and an even address represented by 0, and the current read data comprises 0 and 1; and the exclusive-or operation unit is used for acquiring the target address type and the current read data, and carrying out exclusive-or operation on the target address type and the current read data to form the target read data.
10. A magnetic memory array capable of being written to using the method of any one of claims 1-3 or read from using the method of any one of claims 4-6, the magnetic memory array comprising: a memory array comprising a plurality of first sub-arrays and second sub-arrays arranged alternately, wherein the first sub-arrays comprise a plurality of first type memory cells arranged linearly, the second sub-arrays comprise a plurality of second type memory cells arranged linearly, the first sub-arrays share a source line and a write bit line with second sub-arrays adjacent on a first side, and the first sub-arrays share a read bit line with second sub-arrays adjacent on a second side; the magnetic memory array further comprising a peripheral device of magnetic memory cells as claimed in any of claims 7-9.

Description

Writing/reading method of magnetic memory cell, peripheral device and magnetic memory array Technical Field The present invention relates to the field of magnetic memory technologies, and in particular, to a writing/reading method of a magnetic memory unit, a peripheral device, and a magnetic memory array. Background SOT-MRAM is expected to be the core of the next generation memory technology because of the advantages of high writing speed, high durability, low power consumption and the like. However, compared to STT-MRAM, SOT-MRAM is a three-terminal MTJ, which increases the chip area due to its complex bit structure and the high density current requirement during writing. In the research of STT-MRAM, a common source design method is adopted to reduce the array area. This approach works well for SOT-MRAM, but in SOT-MRAM the spin-orbit torque itself can only drive the magnetic moment to rotate, and to achieve deterministic flipping (i.e. writing '0' or '1'), the bistable symmetry of the system energy must be broken. According to the manner of achieving this 'symmetry break', there are mainly two categories, traditional schemes that rely on external magnetic fields to provide bias, and field-free schemes that achieve bias through device structure/material design intrinsic properties. This results in different data being written at the same operating voltage after the arrays of odd and even rows have been designed using a common source, which results in erroneous written data. Disclosure of Invention The writing/reading method of the magnetic memory unit, the peripheral device and the magnetic memory array provided by the invention can realize correct data writing of the common-source SOT magnetic memory device. In a first aspect, the present invention provides a method of writing to a magnetic memory cell for use in an SOT magnetic memory array of a common source design, the method comprising: And acquiring a corresponding relation between a target address of current writing data and a magnetic storage unit type, and determining a target writing result according to the corresponding relation, wherein the storage unit type comprises a first type storage unit and a second type storage unit which share a source line and a writing bit line. Optionally, the determining the writing result according to the correspondence relationship includes: when the type of the magnetic storage unit corresponding to the target address is a first type storage unit, keeping the target writing result identical with the current writing data; and when the type of the magnetic storage unit corresponding to the target address is a second type storage unit, inverting the current writing data to serve as a target writing result. Optionally, the determining the writing result according to the correspondence relationship includes: Determining 0 as representing data of a first type of storage unit and 1 as representing data of a second type of storage unit; And performing exclusive OR operation on the current writing data and the representing data of the magnetic storage unit type corresponding to the target address to obtain the target writing data. In a second aspect, the present invention also provides a method for reading a magnetic memory cell, applied to an SOT magnetic memory array of a common source design, the method comprising: and acquiring a corresponding relation between a target address of current read data and a magnetic memory cell type, and determining a target read result according to the corresponding relation, wherein the memory cell type comprises a first type memory cell and a second type memory cell which share a source line and a read bit line at corresponding positions. Optionally, the determining the reading result according to the correspondence relationship includes: when the type of the magnetic storage unit corresponding to the target address is a first type storage unit, keeping the target reading result the same as the current reading data; And when the type of the magnetic storage unit corresponding to the target address is a second type storage unit, inverting the current read data to serve as a target read result. Optionally, the determining the reading result according to the correspondence relationship includes: Determining 0 as representing data of a first type of storage unit and 1 as representing data of a second type of storage unit; and performing exclusive OR operation on the current read data and the representation data of the magnetic storage unit type corresponding to the target address to obtain the target read data. In a third aspect, the present invention also provides a peripheral device for a magnetic memory cell for use in an SOT magnetic memory array of a common source design, the device comprising: the magnetic memory unit comprises a write control module, a write control module and a write control module, wherein the write control module is used for acquiring the corresponding relation