CN-121999844-A - Optimal read voltage determining method of storage device, electronic device and storage medium

CN121999844ACN 121999844 ACN121999844 ACN 121999844ACN-121999844-A

Abstract

The application discloses a method for determining optimal read voltage of storage equipment, electronic equipment and a storage medium. The method for determining the optimal read voltage of the storage device comprises the steps of obtaining unit distribution numbers of the storage device in different voltage intervals, determining anchor point positions based on a change rule among the unit distribution numbers in response to the fact that target extremum values of the unit distribution numbers are located at preset positions, and determining the position of the optimal read voltage by shifting preset distances based on the anchor point positions. According to the scheme, the application range of the optimal reading voltage calculation can be enlarged, the accuracy of the optimal reading voltage is improved, the number of error bits is reduced, and the probability of successful data reading is improved.

Inventors

DONG GUIQIANG
ZHANG YIFAN
WANG TAO
MA ZHAOYAN
Lin qianfeng

Assignees

慧忆微电子(上海)有限公司

Dates

Publication Date: 20260508
Application Date: 20241108

Claims (10)

1. A method for determining an optimal read voltage of a memory device, the method comprising: Acquiring the distribution quantity of units of the storage device in different voltage intervals; Determining anchor point positions based on a change rule among the plurality of unit distribution numbers in response to the fact that the target extremum of the plurality of unit distribution numbers is located at a preset position; And shifting a preset distance based on the anchor point position to determine the position of the optimal reading voltage, thereby obtaining the optimal reading voltage.
2. The method for determining an optimal read voltage of a memory device according to claim 1, wherein the target extremum includes a maximum value and a minimum value, and the preset position includes a side edge position and an opposite side edge position where a plurality of the cell distribution numbers are sequentially arranged according to the corresponding voltage intervals; the determining, in response to the target extremum of the plurality of unit distribution numbers being located at the preset position, an anchor point position based on a change rule between the plurality of unit distribution numbers includes: Determining that a target extremum of the plurality of cell distribution numbers is located at a preset position in response to a maximum of the plurality of cell distribution numbers being located at the one side edge position and a minimum of the plurality of cell distribution numbers being located at the opposite side edge position; And determining anchor point positions based on the change rule among the distribution numbers of the units.
3. The method of determining an optimal read voltage for a memory device according to claim 2, wherein determining anchor point positions based on a law of variation between a plurality of the cell distribution numbers comprises: fitting the distribution numbers of the units in different voltage intervals to obtain distribution lines of the unit numbers of the storage equipment; and calculating the first derivative of the distribution quantity of each unit on the distribution line of the distribution quantity of the unit, and taking the position of the distribution quantity of the unit corresponding to the first derivative with the largest absolute value as the anchor point position.
4. The method for determining an optimal read voltage of a storage device according to claim 3, wherein the determining a location of the optimal read voltage based on the anchor point location offset by a preset distance, comprises: And shifting the preset distance to a direction close to the minimum value based on the anchor point position so as to determine the position of the optimal reading voltage and obtain the optimal reading voltage.
5. The method for determining an optimal read voltage of a storage device according to claim 3, wherein the determining a location of the optimal read voltage based on the anchor point location offset by a preset distance, comprises: And the first derivatives of the distribution quantity of each unit are negative numbers, and the preset distance is shifted to the right side based on the anchor point position to determine the position of the optimal read voltage, so that the optimal read voltage is obtained.
6. The method for determining an optimal read voltage of a memory device according to claim 3, wherein the fitting the cell distribution numbers in different voltage intervals to obtain a cell number distribution line of the memory device further comprises: Smoothing the unit quantity distribution line to obtain a plurality of smoothed unit distribution quantities; The calculating the first derivative of the distribution quantity of each unit on the distribution line of the distribution quantity of the unit, and taking the position of the distribution quantity of the unit corresponding to the first derivative with the largest absolute value as the anchor point position comprises the following steps: Calculating first derivatives of the distribution quantity of the smoothed units on the distribution line of the unit quantity, and carrying out smoothing on each first derivative; And taking the position of the unit distribution quantity corresponding to the first derivative with the largest absolute value after the smoothing treatment as the anchor point position.
7. The method of determining an optimal read voltage for a memory device according to any one of claims 2-6, wherein determining that a target extremum of a plurality of the cell distribution numbers is at a preset position in response to a maximum of the plurality of the cell distribution numbers being at the one side edge position and a minimum of the plurality of the cell distribution numbers being at the opposite side edge position, further comprises: Determining a region of the plurality of cell distribution numbers between the peaks and the valleys in response to a maximum of the plurality of cell distribution numbers being located at the one side edge location and a minimum of the plurality of cell distribution numbers being located at the opposite side edge location; The anchor point position is a mountain waist position between a peak and a trough, the preset distance is a priori distance between the mountain waist position and the trough, and the position of the optimal reading voltage is the position of the trough.
8. The method for determining the optimal read voltage of the memory device according to claim 1, wherein the obtaining the number of cell distributions of the memory device in different voltage intervals comprises: and respectively carrying out multiple data reading on the storage equipment through a plurality of different offset voltages to obtain the distribution quantity of the units of the storage equipment in different voltage intervals.
9. An electronic device comprising a memory and a processor coupled to each other, the processor being configured to execute program instructions stored in the memory to implement the method of determining an optimal read voltage for a memory device according to any one of claims 1 to 8.
10. A computer readable storage medium having stored thereon program instructions, which when executed by a processor, implement the optimal read voltage determination method of a storage device according to any of claims 1 to 8.

Description

Optimal read voltage determining method of storage device, electronic device and storage medium Technical Field The present application relates to the field of storage technologies, and in particular, to a method for determining an optimal read voltage of a storage device, an electronic device, and a storage medium. Background When the storage device processes a read request of a host, before soft decoding, the number of unit distribution in different voltage intervals can be obtained according to multiple data read from the NAND flash memory, and then the optimal read voltage is solved. And after the optimal reading voltage is obtained, carrying out soft solution flow again based on the optimal reading voltage. When the optimal reading voltage is found by the traditional method, the function fitting is carried out on the distribution quantity of the units, and the optimal voltage is found according to the fitting result. For example, when fitting is performed by using a quadratic function, if the fitting position covers the wave trough, the opening of the quadratic function is upward at this time, and the wave trough position of the quadratic function is the optimal reading voltage position of fitting. However, in practical applications, due to the influence of multiple factors such as retention time and erasing times, the optimal read voltage may generate a larger offset, so that the number of cell distributions obtained based on the statistics of the default threshold voltage is far away from the trough, and thus the accurate optimal read voltage cannot be fitted. Disclosure of Invention The application mainly solves the technical problem of providing a method for determining the optimal read voltage of a storage device, electronic equipment and a storage medium, so as to solve the problem of insufficient accuracy of the optimal read voltage under the offset condition. In order to solve the problems, the application provides a method for determining the optimal read voltage of a storage device, which comprises the steps of obtaining the unit distribution quantity of the storage device in different voltage intervals, determining an anchor point position based on a change rule among the unit distribution quantities in response to the fact that a target extremum of the unit distribution quantities is located at a preset position, and determining the position of the optimal read voltage by shifting a preset distance based on the anchor point position. The target extremum comprises a maximum value and a minimum value, wherein the preset position comprises a side edge position and an opposite side edge position, the plurality of unit distribution numbers are sequentially arranged according to corresponding voltage intervals, the target extremum of the plurality of unit distribution numbers is located at the preset position, the anchor point position is determined based on the change rule among the plurality of unit distribution numbers, the maximum value of the plurality of unit distribution numbers is located at the side edge position, the minimum value of the plurality of unit distribution numbers is located at the opposite side edge position, and the target extremum of the plurality of unit distribution numbers is located at the preset position. The method comprises the steps of determining anchor point positions based on a change rule among a plurality of unit distribution numbers, wherein the anchor point positions comprise fitting the unit distribution numbers in different voltage intervals to obtain a unit distribution line of a storage device, calculating first derivatives of the unit distribution numbers on the unit distribution line, and taking the positions of the unit distribution numbers corresponding to the first derivatives with the largest absolute values as anchor point positions. The method comprises the steps of determining the position of the optimal reading voltage based on the preset distance offset from the anchor point position to obtain the optimal reading voltage. The method comprises the steps of determining the position of the optimal read voltage based on the deviation of the anchor point position by a preset distance, and obtaining the optimal read voltage based on the deviation of the anchor point position by a preset distance. The method comprises the steps of fitting unit distribution numbers in different voltage intervals to obtain unit distribution numbers of the storage device, smoothing the unit distribution lines to obtain smoothed unit distribution numbers, calculating first derivatives of the unit distribution numbers on the unit distribution lines, taking positions of the unit distribution numbers corresponding to the first derivatives with the largest absolute values as anchor points, calculating first derivatives of the unit distribution numbers on the unit distribution lines after the smoothing, smoothing the first derivatives, and taking positions of the unit distri