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CN-122000110-A - Near-room-temperature ultra-low resistance material mediated by base particle vortex

CN122000110ACN 122000110 ACN122000110 ACN 122000110ACN-122000110-A

Abstract

The invention relates to the technical field of low-resistance conductive materials, and particularly discloses a near-room-temperature ultralow-resistance material mediated by a base particle vortex, which comprises a main body material and a regulating medium, wherein the main body material is a doped transition metal oxide or a carbon-based composite material, the regulating medium is a low-atomic-weight dopant, the doped transition metal oxide is La doped SrTiO 3 or Nb doped TiO, compared with the conventional copper conductor, the resistance of the material is obviously reduced, the energy loss in the electron transmission process can be greatly reduced, the energy efficiency of electronic equipment and new energy equipment is obviously improved, the environmental temperature change of most indoor and outdoor engineering application scenes can be adapted, the problem of poor temperature stability of part of the low-resistance material is solved, the reliability of long-term operation of a device is ensured, the whole process of the invention adopts the conventional processes and equipment such as magnetron sputtering, spin coating+pyrolysis, tubular furnace doping, mechanical bending and the like, the operation flow is clear and easy to understand, and the large-scale production can be realized in a common material laboratory or a small-sized production workshop.

Inventors

  • YAN SHOUQUAN

Assignees

  • 严守权

Dates

Publication Date
20260508
Application Date
20260401

Claims (5)

  1. 1. The near-room temperature ultra-low resistance material mediated by the base particle vortex is characterized by comprising a main body material and a regulating medium; the main body material is a doped transition metal oxide or carbon-based composite material; the regulating medium is a low atomic weight dopant; The doped transition metal oxide is La doped SrTiO 3 or Nb doped TiO 2 ; Wherein the doping mass ratio of La is 1-5%, and the doping mass ratio of Nb is 3-8%; the carbon-based composite material is a nitrogen-doped carbon nanotube film or a boron-doped graphene-carbon black composite material; The doping mass ratio of boron is 5% -10% and the doping mass ratio of nitrogen is 3% -7%. The low-atomic-weight doping agent is hydrogen, boron or nitrogen, and the doping source is hydrogen, boric acid or urea, wherein the purity of the boric acid is more than or equal to 99.5%, and the purity of the urea is more than or equal to 99%.
  2. 2. The method for preparing near room temperature ultra-low resistance material according to claim 1, comprising the steps of: s1, pretreatment of raw materials: mixing and grinding main material powder uniformly, pre-burning transition metal oxide at 500 ℃ for 2 hours to remove impurities, and ultrasonically dispersing carbon-based raw materials for 30 minutes to form suspension; selecting a glass substrate or a silicon wafer, ultrasonically cleaning the glass substrate or the silicon wafer for 15 minutes by alcohol and deionized water, blow-drying for standby; S2, preparing a film: Preparing a transition metal oxide film by adopting a magnetron sputtering method, wherein the vacuum degree is 1 multiplied by 10 -3 Pa, the argon flow is 20sccm, the sputtering power is 100-150W, the deposition time is 30-60 minutes, and the film thickness is 1-5 mu m; Or preparing a carbon-based composite film by adopting a spin coating and pyrolysis method, wherein the spin coating rotating speed is 3000-5000rpm, the pyrolysis temperature is 600-800 ℃, the heat preservation is carried out for 1 hour, and the film thickness is 1-3 mu m; s3, vortex defect regulation: S2, placing the obtained film in a tube furnace, introducing hydrogen, ammonia or nitrogen for doping treatment, wherein the gas flow is 5-15sccm, the doping temperature is 300-500 ℃, and the temperature is kept for 20-30 minutes; Then fixing the film on a bending clamp, applying bending stress, and releasing after the film is kept for 1 hour, wherein the bending radius is 5-10 cm; S4, post-processing: Cleaning the surface of the film, and placing the film in a 60 ℃ incubator for 2 hours to remove internal stress, thus obtaining the near-room temperature ultra-low resistance material.
  3. 3. The method of claim 2, wherein the S3 bending jig is made of metal, and the stress applied is based on the premise that the film is not broken.
  4. 4. The method for preparing the near-room temperature ultralow-resistance material according to claim 2, wherein the operation of introducing hydrogen or ammonia in the step S3 is performed in a fume hood, and a tubular fume exhaust port is connected with a ventilation pipeline.
  5. 5. Use of a near room temperature ultra low resistance material prepared according to any one of claims 2-4 in integrated circuit interconnects, new energy automobile motors or high efficiency heat sinks.

Description

Near-room-temperature ultra-low resistance material mediated by base particle vortex Technical Field The invention belongs to the technical field of low-resistance conductive materials, and particularly relates to a near-room-temperature ultralow-resistance material mediated by base particle vortex. Background Along with the rapid iteration in the fields of electronic equipment miniaturization, new energy industry high efficiency and the like, the market demands for low-resistance, high-stability and low-cost conductive materials are becoming urgent, and the performance of the materials directly determines core indexes such as energy efficiency of electronic devices, endurance and heat dissipation efficiency of new energy equipment and the like, so that the materials are key basic materials for promoting the upgrading of related industries. In the existing conductive material system, three main schemes exist, but the main scheme has the obvious defects that firstly, the traditional metal conductor represented by copper and aluminum has mature preparation and application processes, but the room temperature resistivity is higher, the energy loss is serious in high-frequency and high-power scenes, and the severe requirement of high-end electronic equipment and new energy equipment on low loss is difficult to meet; Secondly, although the traditional superconducting material can realize zero resistance characteristic, extreme environment conditions such as extremely low temperature, extremely high pressure and the like are needed to be relied on, so that the preparation process is complex, the application scene is strictly limited, the whole cost is high, and the large-scale popularization and application cannot be realized; Thirdly, the existing low-resistance composite material tries to reduce the resistivity in the modes of element doping, microstructure optimization and the like, but is limited by technical ideas, the resistivity reduction effect is limited, and partial schemes need to rely on high-end precision equipment such as Molecular Beam Epitaxy (MBE), neutron scattering instrument and the like, or complex multi-step synthesis technology is adopted, so that the preparation cost of the material is high, and the industrialized landing difficulty is high. Research on the basic particle vortex field theory shows that the rotation movement and the coupling action of the basic particle vortex can form an equivalent quantum field, and the quantum field can effectively regulate and control the electron transport behavior in the material, thereby providing a brand new theoretical direction for breaking through the performance bottleneck of the traditional conductive material. However, up to the present, a technical scheme of combining a basic particle vortex field regulation theory with a conventional preparation process has not yet appeared in the prior art, and how to realize the ultra-low resistance characteristics under the conditions of near room temperature and normal pressure by using the basic particle vortex field regulation mechanism through a simple and feasible process means, and meanwhile, the stability and the industrialization feasibility of the material are considered, so that the method becomes a core technical problem to be solved in the field. Disclosure of Invention The invention aims to provide a near-room-temperature ultra-low resistance material mediated by base particle vortex so as to solve the problems in the background technology. In order to achieve the above purpose, the present invention provides the following technical solutions: A near room temperature ultra-low resistance material mediated by a base particle vortex, wherein the low resistance material comprises a main body material and a regulating medium; the main body material is a doped transition metal oxide or carbon-based composite material; the regulating medium is a low atomic weight dopant; The doped transition metal oxide is La doped SrTiO 3 or Nb doped TiO 2; Wherein the doping mass ratio of La is 1-5%, and the doping mass ratio of Nb is 3-8%; the carbon-based composite material is a nitrogen-doped carbon nanotube film or a boron-doped graphene-carbon black composite material; The doping mass ratio of boron is 5% -10% and the doping mass ratio of nitrogen is 3% -7%. The low-atomic-weight doping agent is hydrogen, boron or nitrogen, and the doping source is hydrogen, boric acid or urea, wherein the purity of the boric acid is more than or equal to 99.5%, and the purity of the urea is more than or equal to 99%. The preparation method of the near-room-temperature ultralow-resistance material comprises the following steps: s1, pretreatment of raw materials: mixing and grinding main material powder uniformly, pre-burning transition metal oxide at 500 ℃ for 2 hours to remove impurities, and ultrasonically dispersing carbon-based raw materials for 30 minutes to form suspension; selecting a glass substrate or a silicon wafer