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CN-122000112-A - Metal slurry and preparation method and application thereof

CN122000112ACN 122000112 ACN122000112 ACN 122000112ACN-122000112-A

Abstract

The invention discloses a metal slurry, a preparation method and application thereof, and relates to the technical field of electronic industry. The metal slurry comprises metal powder and an organic carrier, the mass ratio of the metal powder to the organic carrier is (10-95)/(1-90), the metal powder comprises first metal powder subjected to plasma treatment, and the organic carrier comprises an organic solvent. According to the invention, the sintering activity of the metal slurry is greatly improved by adopting the metal powder subjected to plasma treatment, the metal slurry shows excellent conductive performance and mechanical performance after sintering, the formed sintered joint has high shear strength, and can resist larger thermal stress generated in the power cycle process, so that the packaging device is endowed with good service reliability. The metal paste provided by the invention can resist larger thermal stress by improving the binding force between the chip and the substrate layer, and is especially suitable for the fields of electronic printed circuit manufacture, sensor manufacture, semiconductor manufacture, packaging and the like.

Inventors

  • XU LIANG
  • HE ZHEN
  • WANG JINLONG
  • YU SHUHONG

Assignees

  • 南方科技大学

Dates

Publication Date
20260508
Application Date
20251218

Claims (10)

  1. 1. A metal paste, characterized in that the metal paste comprises metal powder and an organic carrier; The mass ratio of the metal powder to the organic carrier is (10-95): 1-90; The metal powder comprises first metal powder subjected to plasma treatment; The organic carrier includes an organic solvent.
  2. 2. The metal paste of claim 1, wherein the metal powder comprises a first metal powder that is plasma treated and a second metal powder that is not ion treated; The first metal powder subjected to plasma treatment accounts for 5-100% of the mass of the metal powder.
  3. 3. The metal paste of claim 2, wherein the composition of the plasma-treated first metal powder and the composition of the non-plasma-treated second metal powder each independently comprise at least one of aluminum, titanium, vanadium, chromium, iron, cobalt, nickel, copper, zinc, gallium, zirconium, niobium, molybdenum, palladium, silver, cadmium, indium, tin, antimony, tungsten, platinum, gold, lead, and bismuth; and/or the organic solvent comprises at least one of an alcohol organic solvent, an alcohol ether organic solvent and an ester organic solvent; And/or the organic vehicle further comprises at least one of a dispersant, a rheological agent, a defoamer, and a thickener.
  4. 4. The metal paste according to claim 1, wherein the plasma-treated first metal powder is obtained by one of the following processes (1) to (4): (1) A plasma treatment process; (2) A composite process of a plasma treatment process and a machining treatment process; (3) A composite process of a plasma treatment process and a heat treatment process; (4) And a combination of a plasma treatment process and a chemical treatment process, wherein the chemical treatment process comprises chemical coating, oxidation treatment, reduction treatment, acid treatment, alkali treatment or chemical desorption.
  5. 5. The metal paste according to claim 4, wherein the composite process of the plasma treatment process and the machining treatment process is a plasma ball milling process, and the process parameters adopted by the plasma ball milling process are as follows: The atmosphere is vacuum, reducing atmosphere, oxidizing atmosphere or inert atmosphere; the plasma discharge frequency is more than or equal to 1kHz; The ball-material ratio is 0.01:1-100:1; The ball milling rotating speed is more than or equal to 100rpm, ball milling time is more than or equal to 1min.
  6. 6. The metal paste according to claim 1, wherein the metal paste comprises the following components in mass percent: 10% -95% of metal powder, 1% -90% of organic carrier and 0.1% -30% of composite auxiliary material; The composite auxiliary materials comprise at least one of active auxiliary materials and inert auxiliary materials; The active auxiliary material comprises a metal precursor which can be subjected to low-temperature pyrolysis to form a metal simple substance or a metal compound, wherein the low-temperature pyrolysis temperature is 80-300 ℃; The inert auxiliary materials comprise at least one of organic auxiliary materials and inorganic auxiliary materials; the organic auxiliary materials comprise resin; The inorganic auxiliary materials comprise at least one of oxide, nitride, carbide, carbon simple substance and a first derivative, wherein the first derivative is one of oxide, nitride, carbide and carbon simple substance, and the forming method of the first derivative comprises at least one of element doping, surface modification, structure compounding and functional group substitution.
  7. 7. The metal paste according to claim 6, wherein the active auxiliary material comprises at least one of a metal inorganic compound, a metal organic salt, a metal organic complex and a second derivative, wherein the second derivative is a derivative of the metal inorganic compound, the metal organic salt or the metal organic complex; The organic auxiliary materials comprise at least one of epoxy resin, phenoxy resin, acrylic resin, polymethyl methacrylate resin, polyester, organic silicon resin, furan resin, polyimide resin, polyurethane resin, polyamide resin, polyvinyl alcohol resin, polybutadiene resin, acrylonitrile-butadiene-styrene copolymer, melamine formaldehyde resin, polyethylene resin, polyvinyl butyral resin, acrylonitrile-ethylene-styrene copolymer, polystyrene resin, polyvinylidene chloride resin, polytetrafluoroethylene and derivatives of the resins; The first derivative comprises a compound formed by one of oxide, nitride, carbide and carbon simple substance and a metal material.
  8. 8. A method of preparing a metal paste according to any one of claims 1 to 5, comprising the steps of: and mixing the metal powder and the organic carrier according to the proportion to obtain the metal slurry.
  9. 9. A method of producing a metal paste according to any one of claims 6 to 7, comprising the steps of: and mixing the metal powder, the organic carrier and the composite auxiliary materials according to the proportion to obtain the metal slurry.
  10. 10. Use of the metal paste according to any one of claims 1 to 7 or produced by the production method according to any one of claims 8 to 9, characterized in that the use is conductive line production, sensor electrode production, via and blind via filling of interconnect boards, chip and substrate soldering, module and heat sink soldering or chip electrode and copper foil soldering.

Description

Metal slurry and preparation method and application thereof Technical Field The invention relates to the technical field of electronic industry, in particular to metal slurry and a preparation method and application thereof. Background With the rapid development of the front-end fields of electric automobiles, 5G communication, artificial intelligence and the like, the third generation wide bandgap semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have become ideal choices of high-power electronic devices and radio frequency devices due to excellent physical properties. However, the operating junction temperature of such devices exceeds 150 ℃, which constitutes a serious challenge for the interconnect technology of chip packages. The currently mainstream metal sintering technology can realize low-temperature sintering with high Wen Fuyi, but the problem of unmatched thermal expansion coefficients among the chip, the sintered layer and the substrate exists. This mismatch can induce significant thermal stresses during long-term power cycling, which can ultimately lead to delamination or cracking of the interconnect layer once the bonding of the chip to the substrate is insufficient, a core problem faced by current high power chip packages. Accordingly, the prior art is still in need of improvement and development. Disclosure of Invention Based on the defects in the prior art, the invention aims to provide the metal slurry, the preparation method and the application thereof, and the metal slurry provided by the invention shows excellent conductive performance and mechanical property after sintering, and the formed sintered joint has high shear strength, can resist larger thermal stress generated in the power cycle process, and endows a packaging device with good service reliability. The technical scheme of the invention is as follows: In a first aspect of the present invention, there is provided a metal paste, wherein the metal paste comprises a metal powder and an organic carrier; The mass ratio of the metal powder to the organic carrier is (10-95): 1-90; The metal powder comprises first metal powder subjected to plasma treatment; The organic carrier includes an organic solvent. Optionally, the metal powder comprises a first metal powder subjected to plasma treatment and a second metal powder not subjected to ion treatment; The first metal powder subjected to plasma treatment accounts for 5-100% of the mass of the metal powder. Optionally, the composition of the plasma treated first metal powder and the composition of the non-plasma treated second metal powder each independently comprise at least one of aluminum, titanium, vanadium, chromium, iron, cobalt, nickel, copper, zinc, gallium, zirconium, niobium, molybdenum, palladium, silver, cadmium, indium, tin, antimony, tungsten, platinum, gold, lead, and bismuth; and/or the organic solvent comprises at least one of an alcohol organic solvent, an alcohol ether organic solvent and an ester organic solvent; And/or the organic vehicle further comprises at least one of a dispersant, a rheological agent, a defoamer, and a thickener. Optionally, the plasma-treated first metal powder is obtained by one of the following processes (1) to (4): (1) A plasma treatment process; (2) A composite process of a plasma treatment process and a machining treatment process; (3) A composite process of a plasma treatment process and a heat treatment process; (4) And a combination of a plasma treatment process and a chemical treatment process, wherein the chemical treatment process comprises chemical coating, oxidation treatment, reduction treatment, acid treatment, alkali treatment or chemical desorption. Optionally, the composite process of the plasma treatment process and the mechanical processing process is a plasma ball milling process, and the process parameters adopted by the plasma ball milling process are as follows: The atmosphere is vacuum, reducing atmosphere, oxidizing atmosphere or inert atmosphere; the plasma discharge frequency is more than or equal to 1kHz; The ball-material ratio is 0.01:1-100:1; The ball milling rotating speed is more than or equal to 100rpm, ball milling time is more than or equal to 1min. Optionally, the metal slurry comprises the following components in percentage by mass: 10% -95% of metal powder, 1% -90% of organic carrier and 0.1% -30% of composite auxiliary material; The composite auxiliary materials comprise at least one of active auxiliary materials and inert auxiliary materials; The active auxiliary material comprises a metal precursor which can be subjected to low-temperature pyrolysis to form a metal simple substance or a metal compound, wherein the low-temperature pyrolysis temperature is 80-300 ℃; The inert auxiliary materials comprise at least one of organic auxiliary materials and inorganic auxiliary materials; the organic auxiliary materials comprise resin; The inorganic auxiliary materials comprise at lea