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CN-122000145-A - High-conductivity graphene/copper composite cable and preparation method thereof

CN122000145ACN 122000145 ACN122000145 ACN 122000145ACN-122000145-A

Abstract

The invention belongs to the technical field of graphene composite material preparation, and particularly relates to a high-conductivity graphene/copper composite cable and a preparation method thereof. The preparation method comprises the steps of S1, carrying out surface cleaning on a copper wire matrix by adopting an argon ion beam at a preset glancing incidence angle to obtain a clean copper wire matrix, S2, carrying out surface stepped reconstruction on the clean copper wire matrix to obtain a surface reconstructed copper wire matrix, S3, arranging the surface reconstructed copper wire matrix at a preset crystal orientation, carrying out graphene directional growth treatment to obtain a composite wire, carrying out the graphene directional growth treatment by adopting a gas-phase pulse chemical vapor deposition method or a liquid-phase carbon source dipping-pyrolysis method, S4, applying axial tension to the composite wire in an inert atmosphere to carry out controlled cooling to obtain a composite wire with stable structure, and S5, carrying out guide stranding on the composite wire with stable structure to obtain the high-conductivity graphene/copper composite cable. The high-conductivity graphene/copper composite cable has excellent conductivity.

Inventors

  • HE HUIJUN
  • LIN ZHUOXIAN
  • WANG JIANWEI
  • ZHU JIE
  • YANG MING
  • ZHANG HUANKUN
  • LIU WEIBO

Assignees

  • 有研纳微新材料(北京)有限公司

Dates

Publication Date
20260508
Application Date
20260319

Claims (10)

  1. 1. The preparation method of the high-conductivity graphene/copper composite cable is characterized by comprising the following steps of: S1, adopting an argon ion beam to clean the surface of a copper wire matrix at a preset glancing incidence angle to obtain a clean copper wire matrix; S2, carrying out surface stepped reconstruction on the clean copper wire matrix to obtain a surface reconstructed copper wire matrix; s3, arranging the surface reconstruction copper wire matrix in a preset crystal orientation, and carrying out graphene directional growth treatment to obtain a composite wire, wherein the graphene directional growth treatment adopts a gas phase pulse chemical vapor deposition method or a liquid phase carbon source dipping-pyrolysis method; S4, applying axial tension to the composite wire material in inert atmosphere for controlled cooling to obtain a composite wire material with stable structure; and S5, guiding and twisting the composite wire material with the stable structure to obtain the high-conductivity graphene/copper composite cable.
  2. 2. The method according to claim 1, wherein in S3, the vapor phase pulse chemical vapor deposition method comprises performing graphene deposition on the surface-reconstituted copper wire substrate by using a carbon source precursor gas; The gas phase pulse chemical vapor deposition method at least meets one of the following conditions that the carbon source precursor gas is methane or ethylene, the pulse frequency is 0.1-1 Hz, the duration of single pulse is 5-20 s, the gas flow is 10-50 sccm, the temperature of a deposition area is 900-1050 ℃, the pressure is 100-1000 Pa, and the in-situ monitoring result acquired by a Raman spectrometer or an optical microscope is that the intensity ratio of a G peak to a 2D peak of graphene reaches a preset threshold value or the deposition layer number of the graphene is 1-3.
  3. 3. The preparation method according to claim 1, wherein in S3, the liquid-phase carbon source impregnation-pyrolysis method comprises impregnating the surface-reconstituted copper wire matrix with a carbon source precursor solution, and drying in a sectional manner to form a solid precursor film on the surface-reconstituted copper wire matrix; Optionally, the impregnation at least meets one of the following conditions that the carbon source precursor solution is graphene oxide dispersion liquid or high polymer carbon source solution, the concentration is 0.5 mg/mL-5 mg/mL, the solvent comprises one or a combination of more of deionized water, ethanol and dimethylformamide, and the impregnation time is 10 s-60 s; Optionally, the sectional drying at least meets one of the following conditions that the drying temperature is 80-150 ℃ and the gradient heating temperature is increased, and the drying time is 5-20 min.
  4. 4. A method of preparing according to claim 3, wherein the surface reconstituted copper wire matrix forming the solid precursor film is subjected to high temperature pyrolysis; Optionally, the high-temperature pyrolysis at least meets one of the following conditions that the atmosphere is inert protective gas or reductive mixed gas, the gas flow is 50 sccm-200 sccm, the pressure is normal pressure or micro-positive pressure, the temperature rising rate is 5-20 ℃ per minute, and the temperature is raised to 600-800 ℃ and kept for 10-60 minutes.
  5. 5. The method of claim 1, wherein in S3, the predetermined crystal orientation is [100] or [111].
  6. 6. The method according to any one of claims 1 to 5, wherein in S1, the energy range of the argon ion beam is 100ev to 500ev, the predetermined glancing incidence angle is 5 ° to 30 °, the surface cleaning time is 10min to 30min, and the vacuum degree of the surface cleaning is 1 x 10 -5 Pa or less.
  7. 7. The preparation method of the surface stepped reconstruction method according to any one of claims 1-5, wherein in S2, the method comprises the steps of adopting a hydrogen-argon mixed atmosphere with a hydrogen volume fraction of 5% -20% to treat the clean copper wire substrate, wherein the treatment temperature is 500-800 ℃, the treatment pressure is 100-500 Pa, and the treatment time is 30-60 min.
  8. 8. The method according to any one of claims 1 to 5, wherein in S4, the inert atmosphere is argon gas with a purity of 99.999% or more or nitrogen gas with a purity of 99.999% or more, the axial tension is 0.1n to 1n, the cooling rate is 1 ℃ per minute to 5 ℃ per minute, and the temperature is cooled to room temperature.
  9. 9. The method according to any one of claims 1 to 5, wherein in S5, the guiding angle of the guiding twist is 15 ° to 45 °, and the rotation speed is 10rpm to 30rpm.
  10. 10. The high-conductivity graphene/copper composite cable is characterized in that the high-conductivity graphene/copper composite cable prepared by the preparation method of the high-conductivity graphene/copper composite cable according to any one of claims 1-9, and optionally, the outer diameter of the high-conductivity graphene/copper composite cable is 0.1 mm-10 mm.

Description

High-conductivity graphene/copper composite cable and preparation method thereof Technical Field The invention belongs to the technical field of graphene composite material preparation, and particularly relates to a high-conductivity graphene/copper composite cable and a preparation method thereof. Background The composite cable can be applied to the fields of power transmission, new energy equipment, rail transit, aerospace and the like. With the rapid development of high-end fields such as power transmission, new energy equipment (such as a new energy automobile driving motor), rail transportation, aerospace and the like, the industry has put forward higher performance requirements on the conductivity, mechanical performance, high-temperature stability and use reliability of core conductive materials. The traditional pure copper conductor is a mainstream conductive material at present, has the inherent defects of low conductivity, low mechanical strength, easy softening deformation under high-temperature environment, large loss in the electric energy transmission process and the like, is difficult to meet the application requirements of next-generation high-efficiency energy-saving equipment on extremely low resistance, high current-carrying capacity and high reliability, and becomes a key material for restricting the technical upgrading of the high-end field. Based on this, it is necessary to develop a new composite cable. Disclosure of Invention The invention aims to provide a high-conductivity graphene/copper composite cable and a preparation method thereof, which effectively solve the problems of low graphene growth control precision, poor product performance consistency, poor interface bonding effect and the like in the prior art, realize high-quality and large-scale preparation of the graphene copper composite cable, and are favorable for meeting the application requirements of high-end fields. The invention provides a preparation method of a high-conductivity graphene/copper composite cable, which comprises the following steps of S1, cleaning the surface of a copper wire matrix by adopting an argon ion beam at a preset glancing incidence angle to obtain a clean copper wire matrix, S2, carrying out surface stepped reconstruction on the clean copper wire matrix to obtain a surface reconstructed copper wire matrix, S3, arranging the surface reconstructed copper wire matrix at a preset crystal orientation, carrying out graphene directional growth treatment to obtain a composite wire, carrying out the graphene directional growth treatment, adopting a gas-phase pulse chemical vapor deposition method or a liquid-phase carbon source dipping-pyrolysis method, S4, applying axial tension to the composite wire in an inert atmosphere to carry out controlled cooling to obtain a composite wire with stable structure, and S5, carrying out guide stranding on the composite wire with stable structure to obtain the high-conductivity graphene/copper composite cable. In some embodiments of the application, in S3, the gas phase pulse chemical vapor deposition method comprises the step of carrying out graphene deposition on a copper wire substrate with a surface reconstructed by adopting a carbon source precursor gas, wherein the gas phase pulse chemical vapor deposition method at least meets one of the following conditions, namely, the carbon source precursor gas is methane or ethylene, the pulse frequency is 0.1-1 Hz, the duration of a single pulse is 5-20S, the gas flow is 10-50 sccm, the temperature of a deposition area is 900-1050 ℃, the pressure is 100-1000 Pa, and the strength ratio of G peak to 2D peak of graphene acquired by a Raman spectrometer or an optical microscope reaches a preset threshold value or the deposition layer number of graphene is 1-3. In some embodiments of the application, in S3, the liquid-phase carbon source dipping-pyrolysis method comprises dipping the surface reconstruction copper wire matrix by adopting a carbon source precursor solution, and carrying out sectional drying to form a solid precursor film on the surface reconstruction copper wire matrix, wherein the dipping at least meets one of the following conditions, namely, the carbon source precursor solution is graphene oxide dispersion liquid or high molecular carbon source solution, the concentration is 0.5 mg/mL-5 mg/mL, the solvent comprises one or a combination of more of deionized water, ethanol or dimethylformamide, the dipping time is 10S-60S, the sectional drying at least meets one of the following conditions, namely, the drying temperature is 80 ℃ to 150 ℃ and the gradient heating time is 5 min-20 min. In some embodiments of the application, the surface-reconstructed copper wire substrate forming the solid precursor film is subjected to high-temperature pyrolysis, and optionally, the high-temperature pyrolysis at least meets one of the following conditions of inert shielding gas or reducing mixed gas, 50 sccm-200 sccm in gas