CN-122000261-A - Low-energy electron emission device and micro-region chemical reaction processing method

Abstract

The invention discloses a low-energy electron emission device and a micro-region chemical reaction processing method, and relates to the technical field of micro-region chemistry. The micro-air supply device comprises an air supply pipeline, a feed-through air passage, a conductive needle point, a sample platform, a precision control platform and a precision control platform, wherein the air supply pipeline is used for introducing reaction gas, the feed-through air passage is in threaded connection with the air supply pipeline and comprises a hollow pipe, micropores are formed in the top surface and the bottom surface of the hollow pipe, a connecting line of the micropores in the top surface and the bottom surface is arranged towards the center of the bottom surface to realize micro-air flow supply, the conductive needle point penetrates through the bottom surface of the hollow pipe and is connected with a power negative electrode to adjust bias voltage to realize low-energy electron emission, the sample platform is positioned below the conductive needle point and is used for placing a sample, the positive electrode of the power supply is connected with the power negative electrode connected with the conductive needle point to form a closed loop, the precision control platform is used for placing the sample platform, and the position of the sample platform is accurately adjusted by adjusting the position of the sample platform, and the air supply pipeline, the feed-through air passage, the conductive needle point, the sample platform and the precision control platform are coaxially arranged. The invention has high processing precision and is suitable for the requirement of mass production.

Inventors

• ZHOU YUNSHEN
• LI SHIWEN
• XU SHUANG
• LU WENHAO

Assignees

• 上海交通大学

Dates

Publication Date

20260508

Application Date

20260202

Claims (10)

1. 1. A low-energy electron-emitting device, comprising: The gas supply pipeline is used for introducing reaction gas; the feed-through gas circuit is in threaded connection in the gas supply pipeline and comprises a hollow pipe, micropores are formed in the top surface and the bottom surface of the hollow pipe, and a connecting line of the micropores of the top surface and the bottom surface is arranged towards the center of the bottom surface so as to realize micro-air flow supply; the conductive needle point is arranged on the bottom surface of the hollow tube in a penetrating way and is connected with a negative electrode of a power supply for adjusting bias voltage so as to realize low-energy electron emission; The sample stage is positioned below the conductive needle point and is used for placing a sample, connecting with the positive electrode of a power supply, and forming a closed loop with the negative electrode of the power supply connected with the conductive needle point; the precise operation console is used for placing the sample platform and realizing precise adjustment of the sample position by adjusting the position of the sample platform; the air supply pipeline, the feed-through air channel, the conductive needle point, the sample stage and the precise operation control stage are coaxially arranged.
2. 2. The low-energy electron emission device according to claim 1, wherein a check valve is further connected to a side surface of said gas supply line.
3. 3. The low energy electron emission device of claim 1, wherein an angle between said top and bottom microporous connection lines and an end of said conductive tip is 10-30 °, said conductive tip has a dimension length of 1 μm to 1 cm, a diameter of 100 nm to 500 μm, and a tip dimension of less than 2 nm.
4. 4. The low-energy electron emission device according to claim 1, wherein a flow controller and a pressure sensor are further provided in the gas supply line.
5. 5. The low-energy electron emission device according to claim 1, further comprising a vacuum chamber, wherein the gas supply line, the gas feed-through line, the conductive tip, the sample stage, and the precision operation and control stage are all disposed in the vacuum chamber.
6. 6. The low-energy electron emission device according to claim 5, wherein a vacuum degree of said vacuum chamber is 10 - ³~10 -6 Pa.
7. 7. The low energy electron emission device of claim 1, further comprising a controller electrically connected to said gas supply line, power supply, precision console and check valve.
8. 8. A method for processing a low-energy electron-induced micro-domain chemical reaction, comprising the steps of: Step 1, fixing a sample to be processed on a sample table, placing the sample into a vacuum cavity, starting a vacuum pumping unit, and pumping the pressure of the vacuum cavity to 10 - ³~10 -6 Pa; Step 2, selecting a reaction gas according to the processing type, and conveying the reaction gas through a gas supply pipeline to form a local micro-area gas atmosphere taking a sample area to be processed as a center; Step 3, starting a power supply, focusing an electron beam to a sample to-be-processed area through micropores, scanning along a preset track, and performing induction reaction on the low-energy electron beam and the reaction gas; And step 4, stopping electron beam irradiation and gas conveying after the processing is finished, continuously vacuumizing for 30-60 minutes, discharging residual gas, then filling inert gas into the vacuum cavity to normal pressure, and taking out the sample.
9. 9. The method according to claim 8, wherein in step 2, the reaction gas is selected from any one of methane, acetylene, silane, and chromium hexacarbonyl when the additive processing is performed by a deposition method, and any one of oxygen, sulfur hexafluoride, and chlorine when the subtractive processing is performed by an etching method.
10. 10. The method of claim 8, wherein in step 3, the electron beam energy is adjusted by a step size of 0.1 eV and the beam current is adjusted by a step size of 0.1 nA.

Description

Low-energy electron emission device and micro-region chemical reaction processing method Technical Field The invention relates to the technical field of micro-region chemistry, in particular to a low-energy electron emission device and a low-energy electron induced micro-region chemical reaction processing method. Background In the prior art, the micro-area chemical reaction processing method mainly comprises a laser processing method, a Focused Ion Beam (FIB) processing method and a Focused electron-beam-induced processing (FEBIP) processing method. However, the laser processing method is to utilize the thermal effect or photochemical effect of the laser beam to realize etching or deposition of the material, and has the inherent defects that the focusing limit of the laser beam is limited by diffraction, the processing precision is in micro-scale, the nano-scale requirement is difficult to meet, the heat affected zone is large, the lattice distortion and the performance degradation of a sample are easy to cause, the controllability of additive processing is poor, and a complex micro-nano structure is difficult to form. Focused Ion Beam (FIB) processing, the sputter etching (subtractive) or ion induced deposition (additive) of materials is achieved by bombarding the sample surface with a focused high energy ion beam (e.g., ga + ions, energy typically 10-100 keV). Although the method can reach the nanometer precision, the method has obvious defects that the bombardment of high-energy ions can cause lattice damage and ion implantation pollution on the surface of a sample, the processing rate is extremely low, the deposition efficiency of the additive processing is low, the material purity is poor, and the method is only suitable for small-area fine processing and is difficult to meet the requirement of mass production. The Focused electron-beam-induced processing (FEBIP) process uses a high energy electron beam (typically 1-30 keV energy) to induce the gas to react with the sample surface to effect processing. However, the core problems of the existing FEB technology are that the electron energy is too high, the accumulation of the surface charge and the local overheating of a sample are easy to occur, the control capability of micro-area gas is insufficient, namely, the reaction gas is easy to diffuse in a vacuum cavity, a localized reaction atmosphere cannot be formed, the processing resolution is reduced, the reaction selectivity is poor, and the high-precision requirements of addition and subtraction processing are difficult to be met simultaneously. Accordingly, those skilled in the art have sought to provide a micro-area chemical reaction processing method that has high processing accuracy and is suitable for mass production requirements. Disclosure of Invention In view of the above-mentioned drawbacks of the prior art, the present invention aims to provide a micro-area chemical reaction processing method with high processing precision and suitable for mass production. In order to achieve the technical purpose, the invention mainly adopts the following technical scheme: The invention discloses a low-energy electron emission device, comprising: The gas supply pipeline is used for introducing reaction gas; the feed-through gas circuit is in threaded connection in the gas supply pipeline and comprises a hollow pipe, micropores are formed in the top surface and the bottom surface of the hollow pipe, and a connecting line of the micropores of the top surface and the bottom surface is arranged towards the center of the bottom surface so as to realize micro-air flow supply; the conductive needle point is arranged on the bottom surface of the hollow tube in a penetrating way and is connected with a negative electrode of a power supply for adjusting bias voltage so as to realize low-energy electron emission; The sample stage is positioned below the conductive needle point and is used for placing a sample, connecting with the positive electrode of a power supply, and forming a closed loop with the negative electrode of the power supply connected with the conductive needle point; the precise operation console is used for placing the sample platform and realizing precise adjustment of the sample position by adjusting the position of the sample platform; the air supply pipeline, the feed-through air channel, the conductive needle point, the sample stage and the precise operation control stage are coaxially arranged. In a preferred embodiment of the invention, the side surface of the air supply pipeline is also connected with a one-way valve. In a preferred embodiment of the invention, the included angle between the top and bottom micro-hole connecting lines and the tail end of the conductive needle point is 10-30 degrees, the dimension length of the conductive needle point is 1 μm to 1 cm, the diameter is 100 nm to 500 μm, and the tip size is less than 2 nm. In a preferred embodiment of the present invention, a flow