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CN-122000265-A - Lifting adjusting type ion beam etching uniformity correction structure

CN122000265ACN 122000265 ACN122000265 ACN 122000265ACN-122000265-A

Abstract

The invention discloses a lifting adjustment type ion beam etching uniformity correction structure, which relates to the technical field of semiconductors and comprises a reaction cavity, wherein a first motor is fixedly arranged at the back surface of the reaction cavity, the output end of the first motor extends into the interior of the reaction cavity in a penetrating way, the output end of the first motor is fixedly connected with a carrier, a rotating seat mechanism and a lifting clamping mechanism are arranged in the carrier, one side of the carrier is provided with a feed inlet, one side of the reaction cavity is provided with an ion source, the output end of the ion source faces towards the carrier, and the correction mechanism comprises a ball screw, a guide rod and a second motor, and the bottom end of the ball screw is rotationally connected with the inner bottom surface of the reaction cavity through a bearing. The invention can realize accurate lifting of the correction plate through the second motor drive, and can adapt to different etching angle demands by utilizing the correction plate to shield the ion beam to compensate the difference of etching rates at the far end and the near end, and the detachable design of the correction plate is convenient to replace and adapt to ion sources and carriers with different specifications.

Inventors

  • YUAN WEI
  • WANG JUN

Assignees

  • 合肥微芸半导体科技有限公司

Dates

Publication Date
20260508
Application Date
20260309

Claims (6)

  1. 1. The utility model provides a lift adjustment formula ion beam etching homogeneity correction structure, its characterized in that, includes reaction cavity (1), the back department of reaction cavity (1) fixedly mounted has first motor (2), the output of first motor (2) runs through and extends to in the inside of reaction cavity (1), just the output fixedly connected with microscope carrier (3) of first motor (2), the internally mounted of microscope carrier (3) has roating seat mechanism and lift clamping mechanism, one side of microscope carrier (3) is equipped with the feed inlet, one side department of reaction cavity (1) is equipped with ion source (4), ion source (4) output is towards microscope carrier (3); The correction mechanism comprises a ball screw (5), a guide rod (6) and a second motor (7), wherein the bottom end of the ball screw (5) is rotationally connected with the inner bottom surface of the reaction cavity (1) through a bearing, the two ends of the guide rod (6) are fixedly connected with the inner bottom surface and the top surface of the reaction cavity (1) respectively, the ball screw (5) and the guide rod (6) are symmetrically distributed on the front side and the rear side of the ion source (4), the second motor (7) is fixedly installed on the top of the reaction cavity (1), the output end of the second motor (7) penetrates through the reaction cavity (1) and is connected with the shaft end of the ball screw (5), a first sliding seat (8) is arranged on the outer screw joint of the ball screw (5), a second sliding seat (9) is sleeved on the outer portion of the guide rod (6) in a sliding mode, and a correction plate (10) is detachably installed between the first sliding seat (8) and the second sliding seat (9).
  2. 2. The lifting-adjusting type ion beam etching uniformity correction structure according to claim 1, wherein clamping grooves (11) are formed in one side, opposite to the second sliding seat (9), of the first sliding seat (8), correction plates (10) are movably clamped in the clamping grooves (11), two limit grooves (12) are formed in the correction plates (10), locking knobs (13) are arranged on one sides, far away from the ion source (4), of the first sliding seat (8) and the second sliding seat (9) in a threaded mode, and the locking knobs (13) are matched and clamped with the limit grooves (12).
  3. 3. The lifting-adjusting type ion beam etching uniformity correction structure according to claim 1, wherein limiting blocks (14) are fixedly connected to the front side and the rear side of the correction plate (10), and the bottoms of the two limiting blocks (14) are respectively attached to the tops of the first sliding seat (8) and the second sliding seat (9).
  4. 4. The structure according to claim 1, wherein the size of the correction plate (10) is larger than the size of the output port of the ion source (4), and the correction plate (10) is made of graphite material.
  5. 5. The lifting-adjusting type ion beam etching uniformity correction structure according to claim 1, wherein the rotating seat mechanism comprises a third motor (15) and a rotating table (16), the third motor (15) is installed inside the carrying table (3), and the bottom of the rotating table (16) is connected with the output end of the third motor (15).
  6. 6. The lifting and adjusting type ion beam etching uniformity correction structure according to claim 1, wherein the lifting and clamping mechanism comprises lifting air cylinders (17) and annular pressing plates (18), the lifting air cylinders (17) are arranged in two, the two lifting air cylinders (17) are fixedly installed in the carrier (3) and symmetrically distributed on the outer side of the rotary table (16), the bottoms of the annular pressing plates (18) are fixedly connected with the telescopic ends of the two lifting air cylinders (17), and the annular pressing plates (18) are located above the rotary table (16).

Description

Lifting adjusting type ion beam etching uniformity correction structure Technical Field The invention relates to the technical field of semiconductors, in particular to a lifting adjustment type ion beam etching uniformity correction structure. Background In the field of semiconductor manufacturing, ion beam etching technology is one of key technologies in micro-nano structure processing by virtue of the advantages of high etching precision and strong directivity, and is widely applied to manufacturing processes of various semiconductor devices. The ion beam etching equipment has the core working principle that the ion source emits high-energy ion beams to bombard the surface of the wafer to realize selective removal of materials, and the etching uniformity directly determines the performance consistency and the yield of the semiconductor device. In the existing ion beam etching equipment, a circular ion source and a carrying platform capable of rotating around an X axis are generally configured, and the angle between the carrying platform and the ion source can be adjusted around a Y axis so as to realize adjustment of etching angles of different ion beams. However, in the etching scene with a large angle of incidence, the distance from the near end (A) to the far end (B) of the wafer etching area to the ion source is obviously different, so that the bombardment intensity of the ion beam to the near end is higher than that to the far end, and further, a large etching rate difference is formed, the etching uniformity is seriously damaged, and the processing requirement of a high-precision semiconductor device cannot be met. In order to improve etching uniformity, the prior art relies on complex ion source optimization or carrier motion parameter adjustment, and lacks an adaptive correction structure special for the difference of the etching rates at the far end and the near end. Even if some devices try to interfere with ion beam distribution through simple components, the problems of unreasonable structural design exist that either the terminal shape is fixed and can not be flexibly replaced according to etching requirements, or the devices are inconvenient to install and detach and difficult to adapt to ion sources and carriers with different specifications, or the movement mode is single and the speed difference under different etching angles can not be accurately compensated. In addition, the defects of unstable connection guiding, complicated driving control and the like of the existing correction related structure are common, and convenient and efficient etching uniformity correction is difficult to realize. Therefore, there is a need for an ion beam etching correction mechanism with simple structure, convenient installation and flexible movement mode, so as to solve the problem of poor speed of the far end and the near end during large-angle etching. Disclosure of Invention The invention discloses a lifting adjustment type ion beam etching uniformity correction structure, which is provided with a correction mechanism, so that a ball screw can be driven by a second motor to drive a first sliding seat to lift, the height of a correction plate can be accurately adjusted by matching with a second sliding seat guided by a guide rod, the correction plate can shield an ion beam to realize far and near end etching rate compensation, uniformity correction requirements under different etching angles are met, the correction plate is detachably connected with a locking knob through a clamping groove, and the correction plate is convenient to replace and is suitable for ion sources and carriers with different specifications. In order to solve the technical problems, the invention is realized by the following technical scheme: The invention relates to a lifting adjustment type ion beam etching uniformity correction structure, which comprises a reaction cavity, wherein a first motor is fixedly arranged at the back surface of the reaction cavity, the output end of the first motor extends into the interior of the reaction cavity in a penetrating way, the output end of the first motor is fixedly connected with a carrier, a rotating seat mechanism and a lifting clamping mechanism are arranged in the carrier, a feed inlet is arranged at one side of the carrier, an ion source is arranged at one side of the reaction cavity, and the output end of the ion source faces the carrier; The correcting mechanism comprises a ball screw, a guide rod and a second motor, wherein the bottom end of the ball screw is rotationally connected with the inner bottom surface of the reaction cavity through a bearing, the two ends of the guide rod are fixedly connected with the inner bottom surface and the top surface of the reaction cavity respectively, the ball screw and the guide rod are symmetrically distributed on the front side and the rear side of the ion source, the second motor is fixedly arranged at the top of the reaction cavity, the