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CN-122000780-A - Semiconductor laser module

CN122000780ACN 122000780 ACN122000780 ACN 122000780ACN-122000780-A

Abstract

The application provides a semiconductor laser module which comprises a semiconductor laser, a reflecting mirror, an optical element and a conical outer surface, wherein the semiconductor laser comprises a light emitting cavity surface, the reflecting mirror is provided with a light incident end surface, the optical element is arranged between the light emitting cavity surface and the light incident end surface and is used for guiding light emitted by the semiconductor laser to the light incident end surface, the optical element is provided with a light incident surface opposite to the light emitting cavity surface, a light emitting surface opposite to the light incident end surface, the conical outer surface is plated with a film layer with refractive index changing along a first direction or a second direction, the first direction is the extending direction of the light incident surface to the light emitting surface, the second direction is perpendicular to the first direction, and the outer diameter of the optical element gradually decreases along the direction from the light incident surface to the light emitting surface. The application can realize multi-directional stray light inhibition and improve the reliability and performance of the semiconductor laser.

Inventors

  • ZHANG JIYU
  • LI YING

Assignees

  • 度亘核芯光电技术(苏州)股份有限公司
  • 度亘光电科技(南通)有限公司

Dates

Publication Date
20260508
Application Date
20260410

Claims (10)

  1. 1. A semiconductor laser module, comprising: A semiconductor laser (100) including a light exit facet (101); A reflecting mirror (300) having a light incident end face (301); An optical element (200) provided between the light-emitting cavity surface (101) and the light-incident end surface (301) and configured to guide light emitted from the semiconductor laser (100) to the light-incident end surface (301); Wherein the optical element (200) has an entrance surface (202) opposite the exit cavity surface (101), an exit surface (203) opposite the light entrance end surface (301), and a tapered outer surface; The conical outer side surface is plated with a film layer with refractive index changing along a first direction or a second direction, the first direction is the extending direction from the light incident surface (202) to the light emergent surface (203), and the second direction is perpendicular to the first direction; the outer diameter of the optical element (200) gradually decreases in a direction from the light incident surface (202) to the light emergent surface (203).
  2. 2. The semiconductor laser module of claim 1, wherein the film layer is made of two materials, and the total thickness of the film layer is inversely proportional to the difference in refractive indices of the two materials of the film layer.
  3. 3. The semiconductor laser module according to claim 1, characterized in that a lens (201) is provided on the light exit surface (203) of the optical element (200), and that the size of the lens (201) is of the order of sub-wavelength, wherein the effective diameter of the lens (201) matches the effective diameter of a laser spot formed by the semiconductor laser (100) at the position of the light exit surface (203).
  4. 4. A semiconductor laser module according to claim 3, characterized in that the lens (201) comprises a hemispherical, aspherical or diffractive optical surface.
  5. 5. A semiconductor laser module according to claim 3, wherein when the lens (201) is hemispherical or aspherical, the hemispherical or aspherical surface protrudes from the light entrance surface (202) in the extending direction of the light exit surface (203); when the lens (201) is a diffractive optical surface, the diffractive optical surface is a periodic or aperiodic microstructure.
  6. 6. The semiconductor laser module according to claim 1, characterized in that the tapered outer side surface of the optical element (200) is formed with a photonic crystal structure including a one-dimensional photonic crystal structure, a two-dimensional photonic crystal structure, or a three-dimensional photonic crystal structure, the one-dimensional photonic crystal structure, the two-dimensional photonic crystal structure, and the three-dimensional photonic crystal structure being different in morphology.
  7. 7. The semiconductor laser module of claim 6, wherein, The photonic crystal structure comprises a one-dimensional photonic crystal structure which is a laminated structure formed by alternately stacking two dielectric materials with different refractive indexes on the conical outer side surface of the optical element (200) along the direction perpendicular to the conical outer side surface, or, The photonic crystal structure comprises a two-dimensional photonic crystal structure, the two-dimensional photonic crystal structure is an array structure, the array structure is etched and formed on the surface of the outer side of the cone, the surface of the array structure is in an uneven shape, or, The photonic crystal structure includes a three-dimensional photonic crystal structure that is a material having three-dimensional periodic refractive index variations prepared at the tapered outer side surface of the optical element (200).
  8. 8. The semiconductor laser module of claim 2, wherein the film is formed by stacking a first film material and a second film material, wherein the first film material and the second film material are each one of tantalum pentoxide, silicon dioxide, titanium dioxide, hafnium dioxide, aluminum oxide, or silicon nitride, and wherein the first film material is different from the second film material.
  9. 9. The semiconductor laser module of claim 2, wherein the refractive index of the film varies along a radial direction of the tapered outer surface, the film having a first refractive index in a central region of the tapered outer surface, the refractive index of the film continuously decreasing from the central region outwardly; the doping concentrations of the two materials in the film layer are changed along the radial gradient so as to realize continuous change of the refractive index of the film layer.
  10. 10. The semiconductor laser module according to claim 1, characterized in that the light exit facet (101) of the semiconductor laser (100) and the light entrance facet (202) of the optical element (200) are in contact with each other or that a space is provided between the light exit facet (101) of the semiconductor laser (100) and the light entrance facet (202) of the optical element (200); Wherein the light incident surface (202) of the optical element (200) is plated with a heat conductive material, or the light emergent cavity surface (101) of the semiconductor laser (100) is plated with a heat conductive material.

Description

Semiconductor laser module Technical Field The application relates to the technical field of semiconductor lasers, in particular to a semiconductor laser module. Background In a module package, output laser light of a semiconductor laser chip is often reflected by interfaces such as an internal metal housing and an optical fiber end face, so that return stray light returning to a cavity surface of the semiconductor laser is formed. The stray light can not only cause local temperature rise of the cavity surface of the semiconductor laser and interfere with the stability of a laser mode, but also accelerate the aging of the semiconductor laser chip and even cause sudden burning of the semiconductor laser chip under the long-term action, and the repeated reflection and scattering of the stray light in the packaging cavity can also bring additional optical noise to influence the quality and the stability of an emergent light beam. In addition, as the semiconductor laser is developed to a higher power and smaller package size, the generation path of the stray light and the reflection angle thereof are also more complex, and the conventional package structure has limited capability of suppressing the multi-angle stray light, so that a package structure capable of suppressing the multi-angle stray light is needed. Disclosure of Invention In view of this, the present application provides a method for solving the technical problems of performance degradation and reliability degradation of a semiconductor laser caused by multi-angle reflection of stray light in a package structure and return to a cavity surface of the semiconductor laser in the prior art. The technical scheme provided by the application is as follows: the present application provides a semiconductor laser module including: The semiconductor laser comprises a light emergent cavity surface; A reflecting mirror having a light incident end face; An optical element, disposed between the light-emitting cavity surface and the light-incident end surface, for guiding the light emitted from the semiconductor laser to the light-incident end surface; wherein the optical element has a light-in surface opposite to the light-out cavity surface, a light-out surface opposite to the light-in end surface, and a tapered outer side surface; the conical outer side surface is plated with a film layer with refractive index changing along a first direction or a second direction, wherein the first direction is the extending direction from the light incident surface to the light emergent surface (the second direction is perpendicular to the first direction; the outer diameter of the optical element gradually decreases along the direction from the light incident surface to the light emergent surface. Further, the film layer is made of two materials, and the total thickness of the film layer is inversely proportional to the difference in refractive index of the two materials of the film layer. Further, a lens is arranged on the light-emitting surface of the optical element, and the size of the lens is of the sub-wavelength magnitude, wherein the effective diameter of the lens is matched with the effective diameter of a laser spot formed by the semiconductor laser at the position of the light-emitting surface. Further, the lens includes a hemispherical, aspherical or diffractive optical surface. Further, when the lens is a hemispherical surface or an aspheric surface, the hemispherical surface or the aspheric surface protrudes from the light incident surface to the extending direction of the light emergent surface; When the lens is a diffractive optical surface, the diffractive optical surface is a periodic or aperiodic microstructure. Further, a photonic crystal structure is formed on the tapered outer side surface of the optical element, the photonic crystal structure comprises a one-dimensional photonic crystal structure, a two-dimensional photonic crystal structure or a three-dimensional photonic crystal structure, and the shapes of the one-dimensional photonic crystal structure, the two-dimensional photonic crystal structure and the three-dimensional photonic crystal structure are different. Further, the photonic crystal structure includes a one-dimensional photonic crystal structure which is a laminated structure formed by alternately stacking two dielectric materials having different refractive indexes on the tapered outer side surface of the optical element in a direction perpendicular to the tapered outer side surface, or, The photonic crystal structure comprises a two-dimensional photonic crystal structure, the two-dimensional photonic crystal structure is an array structure, the array structure is etched and formed on the surface of the outer side of the cone, the surface of the array structure is in an uneven shape, or, The photonic crystal structure comprises a three-dimensional photonic crystal structure, and the three-dimensional photonic crystal structure is a mat