CN-122000789-A - Semiconductor laser with on-chip composite cavity structure and preparation method thereof

CN122000789ACN 122000789 ACN122000789 ACN 122000789ACN-122000789-A

Abstract

The application provides a semiconductor laser with an on-chip composite cavity structure and a preparation method thereof, and relates to the technical field of semiconductor lasers. The semiconductor laser comprises a first electrode, a substrate, a first limiting layer, a first waveguide layer, an active region, a second waveguide layer and a second limiting layer which are sequentially arranged from bottom to top, wherein a first groove structure is formed on the upper surface of the second limiting layer, the second electrode is arranged on the second limiting layer and covers the first groove structure, a second groove structure is formed on the lower surface of the second electrode, the first groove structure and the second groove structure are partially embedded, carriers are injected after forward bias is applied to the first electrode and the second electrode, the carriers are driven to be injected into the active region for recombination, the active region generates radiation light in the recombination process and forms an optical field, the first limiting layer and the second limiting layer limit the optical field to diffuse, and the first waveguide layer and the second waveguide layer restrict the limited optical field to form a stable optical mode.

Inventors

ZHANG ENQUAN
YANG CHENGAO
NIU ZHICHUAN
WU DONGHAI
SHI JIANMEI
XU YINGQIANG
NI HAIQIAO
CHEN YIHANG

Assignees

中国科学院半导体研究所

Dates

Publication Date: 20260508
Application Date: 20260116

Claims (10)

1. A semiconductor laser having an on-chip composite cavity structure, comprising: the device comprises a first electrode (11), a substrate (10), a first limiting layer (8), a first waveguide layer (7), an active region (6), a second waveguide layer (5) and a second limiting layer (4) which are sequentially arranged from bottom to top, wherein a first groove structure is arranged on the upper surface of the second limiting layer (4); A second electrode (1) arranged on the second limiting layer (4) and covering the first groove structure, wherein a second groove structure is arranged on the lower surface of the second electrode (1), and the first groove structure and the second groove structure are partially embedded; Wherein carriers are injected after forward bias is applied to the first electrode (11) and the second electrode (1), and the carriers are driven to be injected into the active region (6) for recombination; the active region (6) generates radiation light in a compounding process and forms an optical field, the first confinement layer (8) and the second confinement layer (4) limit the optical field from diffusing, and the first waveguide layer (7) and the second waveguide layer (5) restrict the limited optical field so as to form a stable optical mode.
2. The semiconductor laser of claim 1, wherein the semiconductor laser further comprises: -a buffer layer (9) arranged between said first confinement layer (8) and said substrate (10) for mitigating lattice mismatch of said first confinement layer (8) and said substrate (10).
3. The semiconductor laser of claim 3, wherein the semiconductor laser further comprises: And the insulating layer (2) is arranged between the groove part of the first groove structure and the second electrode (1) and is used for insulating the embedded part of the second electrode (1) and the second limiting layer (4).
4. The semiconductor laser of claim 1, wherein the semiconductor laser further comprises: And the cover layer (3) is arranged between the second electrode (1) and the convex part of the first groove structure and is used for forming ohmic contact, reducing the series resistance between the second electrode (1) and the second limiting layer (4) and reducing current injection loss.
5. The semiconductor laser of claim 1, wherein the semiconductor laser further comprises: The phase-locked waveguide array is arranged on the second limiting layer (4) and comprises a plurality of first ridge waveguides which are distributed at equal intervals and have equal widths and are used for carrying out beam splitting and phase regulation on the restrained optical field, the ridge waveguides are parallel to each other, and the extending direction of the first ridge waveguides is parallel to the light emitting direction of the optical field.
6. The semiconductor laser according to claim 5, the semiconductor laser is characterized in that the semiconductor laser further comprises: The phase locking cavity is arranged on the second limiting layer (4), and one side of the phase locking cavity is connected with the output end of the phase locking waveguide array and is used for carrying out phase locking on the optical field after phase regulation.
7. The semiconductor laser according to claim 6, the semiconductor laser is characterized in that the semiconductor laser further comprises: The one-dimensional transmission array is arranged on the second limiting layer (4) and connected with the other side of the phase-locked cavity and used for transmitting the optical field after phase locking, the one-dimensional transmission array comprises a plurality of second ridge waveguides which are equidistant and have the same width, the spacing between the first ridge waveguides is equal to the spacing between the second ridge waveguides, the width of the first ridge waveguides is equal to the width of the second ridge waveguides, and the projections of the first ridge waveguides and the second ridge waveguides along the light emitting direction are alternately distributed.
8. The semiconductor laser according to claim 7, the semiconductor laser is characterized in that the semiconductor laser further comprises: The amplitude regulation cavity is arranged on the second limiting layer (4), and one side of the amplitude regulation cavity is connected with the output end of the one-dimensional transmission array and is used for amplitude modulation of a transmitted light field.
9. The semiconductor laser of claim 8, wherein the semiconductor laser further comprises: N long ridge waveguides and n-1 short ridge waveguides which are arranged on the second limiting layer (4), wherein n is larger than 1, n is an integer, the n long ridge waveguides and the n-1 short ridge waveguides are alternately arranged, the input ends of the n long ridge waveguides and the input ends of the n-1 short ridge waveguides are connected with the other side of the amplitude regulation cavity, and the n long ridge waveguides and the n-1 short ridge waveguides form a correction structure for carrying out phase correction on an amplitude modulated optical field.
10. A method of fabricating a semiconductor laser having an on-chip composite cavity structure, comprising: Obtaining a substrate (10); Sequentially growing a buffer layer (9), a first limiting layer (8), a first waveguide layer (7), an active region (6), a second waveguide layer (5), a second limiting layer (4) and a cover layer (3) on the substrate; etching the grown epitaxial structure to form a first groove structure on the upper surface of the second limiting layer (4); growing an insulating layer (2) on the surface of the first groove structure, partially etching the insulating layer (2) to expose the cover layer (3) to form a second groove structure, and partially embedding the second groove structure and the first groove structure; forming a second electrode (1) on the insulating layer (2) and the surface of the second groove structure; After the substrate (10) is thinned and polished, a first electrode (11) is formed on the surface thereof.

Description

Semiconductor laser with on-chip composite cavity structure and preparation method thereof Technical Field The application relates to the technical field of semiconductor lasers, in particular to a semiconductor laser with an on-chip composite cavity structure and a preparation method thereof. Background Applications of array semiconductor lasers rely on stable high beam quality outputs, which require the realization of laser outputs with narrow divergence angles in order to adapt to practical application requirements. The method requires accurate regulation and control of the laser light field, ensures uniform phase of the near-field light field, further ensures high concentration of far-field light beams, and is directly related to core structural designs such as phase locking, transmission, phase correction and the like of the laser. At present, the light beam quality improving structure of the array semiconductor laser has limitations on compactness and power adaptability, and the light field regulation and control are difficult to realize accurate phase correction, so that the array semiconductor laser still has the problem of large lateral far-field divergence angle, the light beam quality is further reduced when the working current is increased, and the application requirement of a narrow divergence angle cannot be met. Disclosure of Invention In view of the above, the present application provides a semiconductor laser having an on-chip composite cavity structure and a method of fabricating the same. The application provides a semiconductor laser which comprises a first electrode, a substrate, a first limiting layer, a first waveguide layer, an active region, a second waveguide layer and a second limiting layer which are sequentially arranged from bottom to top, wherein a first groove structure is formed on the upper surface of the second limiting layer, the second electrode is arranged on the second limiting layer and covers the first groove structure, a second groove structure is formed on the lower surface of the second electrode, the first groove structure and the second groove structure are partially embedded, carriers are injected into the first electrode and the second electrode after forward bias is applied to the first electrode and the second electrode, the carriers are driven to be injected into the active region for recombination, the active region generates radiation light in the recombination process and forms an optical field, the first limiting layer and the second limiting layer limit the optical field to diffuse, and the first waveguide layer and the second waveguide layer restrict the limited optical field to form a stable optical mode. According to an embodiment of the application, the semiconductor laser further comprises a buffer layer arranged between the first confinement layer and the substrate for alleviating lattice mismatch of the first confinement layer and the substrate. According to an embodiment of the present application, the semiconductor laser further includes an insulating layer provided between the groove portion of the first groove structure and the second electrode for insulating the fitting portion of the second electrode and the second confinement layer. According to an embodiment of the application, the semiconductor laser further comprises a cap layer arranged between the second electrode and the convex portion of the first groove structure for forming ohmic contact, reducing series resistance between the second electrode and the second confinement layer, and reducing current injection loss. According to the embodiment of the application, the semiconductor laser further comprises a phase-locked waveguide array, which is arranged on the second limiting layer and comprises a plurality of first ridge waveguides which are distributed at equal intervals and have equal widths, wherein the first ridge waveguides are used for carrying out beam splitting and phase regulation on the constrained optical field, the ridge waveguides are parallel to each other, and the extending direction of the first ridge waveguides is parallel to the light emitting direction of the optical field. According to the embodiment of the application, the semiconductor laser further comprises a phase locking cavity which is arranged on the second limiting layer, and one side of the phase locking cavity is connected with the output end of the phase locking waveguide array and used for carrying out phase locking on the optical field after phase regulation. According to the embodiment of the application, the semiconductor laser further comprises a one-dimensional transmission array, which is arranged on the second limiting layer, is connected with the other side of the phase-locked cavity and is used for transmitting the optical field after phase locking, the one-dimensional transmission array comprises a plurality of second ridge waveguides which are equally spaced and have the same width, the s