CN-122000792-A - Pulse modulation laser array chip based on double SOA structure

CN122000792ACN 122000792 ACN122000792 ACN 122000792ACN-122000792-A

Abstract

The invention discloses a pulse modulation laser array chip based on a double-SOA structure, which relates to the technical field of photoelectrons and comprises a substrate, a semiconductor laser array chip, an active photon integrated chip and a photon lead waveguide structure; the semiconductor laser array chip and the active photon integrated chip are both arranged on the substrate and are coupled and connected through a photon lead waveguide structure, the active photon integrated chip comprises an SOA (service oriented architecture) wave-combining chip or an SOA chip, and the semiconductor laser array chip comprises a first SOA structure. The dual-SOA structure is used, so that the light leakage problem existing in the common laser arrays is solved, the larger modulation range and extinction ratio are realized, the combined wave emergence of a plurality of laser arrays is realized, the number of laser channels is increased, and the wavelength tuning range is enlarged.

Inventors

WANG FENG
Cao Jitao
XU KAICHUAN
CHEN XIANGFEI

Assignees

南京大学（苏州）高新技术研究院

Dates

Publication Date: 20260508
Application Date: 20260325

Claims (9)

1. A pulse modulation laser array chip based on a double SOA structure is characterized by comprising a substrate, a semiconductor laser array chip, an active photon integrated chip and a photon lead waveguide structure; The semiconductor laser array chip and the active photon integrated chip are both arranged on the substrate; the semiconductor laser array chip and the active photon integrated chip are coupled and connected through a photon lead waveguide structure.
2. The pulse modulated laser array chip based on the dual SOA structure of claim 1, wherein said substrate is a tungsten copper substrate; the semiconductor laser array chip and the active photon integrated chip are both attached to the tungsten copper substrate, and the height difference between different chips is compensated through the shape design of the tungsten copper substrate; the semiconductor laser array chip and the active photon integrated chip are respectively mounted on the respective thin film circuits and are respectively used for providing driving current and outputting electric signals.
3. The pulse modulated laser array chip based on the double SOA structure as claimed in claim 1, wherein the end surfaces of the semiconductor laser array chip, the active photonic integrated chip and the photonic lead waveguide structure are all plated with an anti-reflection film optimized for the photonic lead waveguide structure to prevent end surface reflection.
4. The pulse modulated laser array chip according to claim 1, wherein the active photonic integrated chip comprises an SOA composite chip or an SOA chip.
5. The pulse modulated laser array chip based on the dual SOA structure as claimed in claim 4, wherein said semiconductor laser array chip comprises a laser, a Y-branch waveguide structure and a first SOA structure; the laser is used as a light source and is arranged according to a 4 multiplied by 4 structure to form a 16-channel laser array, two input waveguides of the Y-branch waveguide structure are respectively connected with two paths of parallel 1 multiplied by 4 laser arrays to finish 8-channel combined wave output, and the first SOA structure is connected with an output waveguide of the Y-branch waveguide structure to amplify or pulse light waves.
6. The pulse modulated laser array chip of claim 5 wherein said SOA wave combining chip comprises a wave combining structure and a second SOA structure, said two input waveguides of said wave combining structure are connected with said first SOA structure by said photon lead waveguide structure for completing 16 channel wave combining output, said second SOA structure is connected with said output waveguide of said wave combining structure for amplifying or modulating light wave.
7. The pulse modulated laser array chip based on the dual SOA structure as claimed in claim 4, wherein said semiconductor laser array chip comprises a laser, a cascaded Y-branch waveguide structure and a first SOA structure; The laser is used as a light source and is arranged according to a 4 multiplied by 4 structure to form a 16-channel laser array, input waveguides of the cascade Y-branch waveguide structure are respectively connected with two paths of 2 multiplied by 4 laser arrays which are connected in parallel to finish 16-channel combined wave output, and the first SOA structure is connected with output waveguides of the cascade Y-branch waveguide structure to amplify or pulse light waves.
8. The pulse modulated laser array chip of claim 7 wherein the SOA chip is connected to the first SOA structure by the photonic lead waveguide structure.
9. The pulse modulation laser array chip based on the double SOA structure as claimed in claim 1, wherein the semiconductor laser array chip comprises a grating layer manufactured based on a reconstruction equivalent chirp technology, a sampling structure is manufactured in a grating unit through one-time holographic exposure and one-time sampling lithography, a phase shift structure corresponding to the sampling structure is introduced in a +1-level grating unit, the +1-level grating unit is used as a resonant cavity, each channel in the laser array realizes different lasing wavelengths by setting sampling periods of different sampling structures, and the formula is as follows: Wherein, the Represents the effective refractive index, lambda represents the lasing wavelength, The period of the sampling is indicated and, Representing the uniform grating period defined by the holographic exposure.

Description

Pulse modulation laser array chip based on double SOA structure Technical Field The invention relates to the technical field of photoelectrons, in particular to a pulse modulation laser array chip based on a double-SOA structure. Background Currently, tunable semiconductor lasers are mainly classified into external cavity tunable lasers, tunable vertical cavity surface emitting lasers, distributed bragg reflection lasers, distributed feedback (Distributed Feedback Laser, DFB) laser arrays, and the like. The DFB laser array is widely applied to the fields of communication, light-operated phased array radar, gas concentration detection, optical fiber sensing and the like by virtue of the advantages of good single-mode stability, larger output power, good direct modulation performance and the like. The DFB laser array can be generally divided into three parts of a laser structure, a wave combining structure and an SOA structure, wherein the SOA structure can amplify and equalize the power of the output light with different wavelengths, can pulse the output light, realizes an on-chip integrated pulse modulation tunable laser, In order to achieve as large a tuning range as possible, it is required that the wavelength of the laser is able to fully cover the gain spectrum range of the active region. However, the SOA structure has great difference on the gain and loss of light with different wavelengths, and generally, the SOA has the maximum optical gain and loss for the center wavelength of the gain spectrum of the active region and has smaller optical gain and loss for the edge of the gain spectrum. In the DFB laser array, the lasers positioned at the edge part of the gain spectrum have light leakage phenomenon due to small loss when the SOA is not powered on, and the light output power is obviously lower than that of other lasers due to small gain when the SOA is powered on. The existing solution is to balance the light-emitting power difference of different lasers by applying different currents to the SOA, but the light leakage phenomenon cannot be solved by the method. Therefore, how to design a pulse modulation laser array chip based on a dual SOA structure to solve the light leakage phenomenon is a problem that needs to be solved by those skilled in the art. Disclosure of Invention In view of the above problems, the present invention has been made to provide a dual SOA structure-based pulse modulation laser array chip for achieving pulse modulation of light of different wavelengths, significantly reducing the size, weight and power consumption of a pulse light source, solving the problem of light leakage caused by deviation of an emission wavelength from the center of a gain spectrum when a laser array is used as a light source, simultaneously achieving multiple laser array combined emission, and expanding a wavelength tuning range. In order to achieve the above purpose, the present invention adopts the following technical scheme: In a first aspect, an embodiment of the present invention provides a pulse modulated laser array chip based on a dual SOA structure, including a substrate, a semiconductor laser array chip, an active photonic integrated chip, and a photonic lead waveguide structure; The semiconductor laser array chip and the active photon integrated chip are both arranged on the substrate; the semiconductor laser array chip and the active photon integrated chip are coupled and connected through a photon lead waveguide structure. Preferably, the substrate is a tungsten copper substrate; the semiconductor laser array chip and the active photon integrated chip are both attached to the tungsten copper substrate, and the height difference between different chips is compensated through the shape design of the tungsten copper substrate; the semiconductor laser array chip and the active photon integrated chip are respectively mounted on the respective thin film circuits and are respectively used for providing driving current and outputting electric signals. Preferably, the end surfaces of the semiconductor laser array chip, the active photon integrated chip and the photon lead waveguide structure are all plated with anti-reflection films optimized for the photon lead waveguide structure so as to prevent end surface reflection. Preferably, the active photonic integrated chip comprises an SOA composite chip or an SOA chip. Preferably, the semiconductor laser array chip comprises a laser, a Y-branch waveguide structure and a first SOA structure; the laser is used as a light source and is arranged according to a 4 multiplied by 4 structure to form a 16-channel laser array, two input waveguides of the Y-branch waveguide structure are respectively connected with two paths of parallel 1 multiplied by 4 laser arrays to finish 8-channel combined wave output, and the first SOA structure is connected with an output waveguide of the Y-branch waveguide structure to amplify or pulse light waves. Preferably, the SOA wav