CN-122001193-A - Driving circuit, driving method, driving apparatus, and storage medium for switching assembly

Abstract

The application discloses a driving circuit, a driving method, driving equipment and a storage medium of a switch assembly. The switch assembly comprises an MOS and an IGBT, the driving circuit comprises a microcontroller which is respectively connected to a grid electrode of the MOS and a grid electrode of the IGBT, wherein the microcontroller is configured to control the MOS to be turned on and control the IGBT to be turned off when the working current is smaller than a first current threshold value so that the working current passes through the MOS, control the MOS to be turned on and then turned off relative to the IGBT when the working current is larger than or equal to the first current threshold value and smaller than a second current threshold value so that the working current passes through the MOS and the IGBT which are connected in parallel, and control the IGBT to be turned on and then turned off relative to the MOS when the working current is larger than or equal to the second current threshold value so that the working current passes through the MOS and the IGBT which are connected in parallel. According to the driving circuit of the switch component, different driving modes are implemented for different current ranges where the working current is, so that the switch device is protected and the working efficiency of the switch device is improved.

Inventors

• JIAO JIANLEI
• SHAO KEKE
• WAN FUXIANG
• YU FANGLIN

Assignees

• 合肥阳光电动力科技有限公司

Dates

Publication Date

20260508

Application Date

20241030

Claims (13)

1. 1. A drive circuit of a switching assembly, the switching assembly comprising a MOS and an IGBT, the drive circuit comprising: A microcontroller connected to the gate of the MOS and the gate of the IGBT respectively, Wherein the microcontroller is configured to: when the working current is smaller than a first current threshold, controlling the MOS to be conducted and controlling the IGBT to be turned off, so that the working current passes through the MOS; When the working current is larger than or equal to the first current threshold and smaller than the second current threshold, controlling the MOS to be firstly switched on and then switched off relative to the IGBT, so that the working current passes through the MOS and the IGBT which are connected in parallel; when the working current is greater than or equal to the second current threshold, the IGBT is controlled to be firstly switched on and then switched off relative to the MOS, so that the working current passes through the MOS and the IGBT which are connected in parallel.
2. 2. The drive circuit of a switching assembly according to claim 1, wherein the first current threshold is set such that an on-voltage drop of the MOS is equal to an on-voltage drop of the IGBT when an operating current is equal to the first current threshold.
3. 3. The drive circuit of the switching assembly of claim 1, wherein the second current threshold is set to a corresponding operating current when the MOS is subjected to a maximum switching stress.
4. 4. The drive circuit of a switch assembly of claim 1, wherein the drive circuit further comprises: The first resistor network is connected between the microcontroller and the grid electrode of the MOS and is used for adjusting the resistance value of a first driving resistor connected between the microcontroller and the grid electrode of the MOS; And the second resistor network is connected between the microcontroller and the gate of the IGBT and is used for adjusting the resistance value of a second driving resistor connected between the microcontroller and the gate of the IGBT.
5. 5. The drive circuit of the switch assembly of claim 4, wherein the microcontroller is configured to adjust a resistance value of the first drive resistor, a resistance value of the second drive resistor by the first resistor network, the second resistor network based on a magnitude of the operating current.
6. 6. A driving method of a switching assembly including a MOS and an IGBT, the driving method comprising: When the working current is in a first current range smaller than a first current threshold, controlling the MOS to be conducted and controlling the IGBT to be turned off so that the working current passes through the MOS; when the working current is in a second current range which is larger than or equal to the first current threshold and smaller than a second current threshold, controlling the MOS to be firstly switched on and then switched off relative to the IGBT, so that the working current passes through the MOS and the IGBT which are connected in parallel; and when the working current is in a third current range which is larger than or equal to the second current threshold, controlling the IGBT to be switched on and off firstly relative to the MOS, so that the working current passes through the MOS and the IGBT which are connected in parallel.
7. 7. The method of driving a switching assembly according to claim 6, wherein the switching assembly is driven by a driving circuit including a microcontroller, a first resistor network connected between the microcontroller and a gate of the MOS, and a second resistor network connected between the microcontroller and a gate of the IGBT, the driving method further comprising: Based on the magnitude of the working current, the resistance value of a first driving resistor connected between the microcontroller and the grid electrode of the MOS is adjusted through the first resistor network, and the resistance value of a second driving resistor connected between the microcontroller and the grid electrode of the IGBT is adjusted through the second resistor network.
8. 8. The method of driving a switching assembly according to claim 7, wherein at least one of the first current range, the second current range, and the third current range is divided into at least two current sub-ranges; The adjusting, based on the magnitude of the operating current, a resistance value of a first driving resistor connected between the microcontroller and the gate of the MOS through the first resistor network, and adjusting a resistance value of a second driving resistor connected between the microcontroller and the gate of the IGBT through the second resistor network includes: and adjusting the resistance value of the corresponding first driving resistor and the resistance value of the second driving resistor through the first resistor network and the second resistor network based on the current sub-range where the working current is.
9. 9. The method of driving a switching assembly according to claim 8, wherein the first current range, the second current range, and the third current range are all divided into three current sub-ranges.
10. 10. The method of driving a switching assembly according to claim 6, wherein the first current threshold is set such that an on-voltage drop of the MOS is equal to an on-voltage drop of the IGBT when an operating current is equal to the first current threshold.
11. 11. The method of driving a switching assembly according to claim 6, wherein the second current threshold is set to a corresponding operating current when the MOS is subjected to a maximum switching stress.
12. 12. A driving device of a switch assembly is characterized in that the driving device of the switch assembly comprises a memory and at least one processor, wherein the memory stores instructions, The at least one processor invokes the instructions in the memory to cause the driving device of the switching assembly to perform the driving method of the switching assembly according to any one of claims 6 to 11.
13. 13. A computer readable storage medium having instructions stored thereon, which when executed by a processor, implement a method of driving a switch assembly according to any of claims 6 to 11.

Description

Driving circuit, driving method, driving apparatus, and storage medium for switching assembly Technical Field The present application relates to the field of driving circuits, and in particular, to a driving circuit, a driving method, a driving device, and a storage medium for a switching assembly. Background Currently, on the driving scheme of a hybrid switch assembly of a Metal-Oxide-semiconductor field effect transistor (MOS) and an insulated gate bipolar transistor (Insulate-Gate Bipolar Transistor, IGBT) connected in parallel, the advantage of small switching loss of the MOS is commonly utilized, and the MOS is driven to switch on and off before the IGBT, so as to ensure that the IGBT realizes zero voltage switching (Zero Voltage Switch, ZVS). However, in the above scheme, when the working current is small, the working efficiency is still low, and after the working current is increased to a certain extent, the MOS is easily damaged due to excessive stress. Disclosure of Invention The application provides a driving circuit, a driving method, driving equipment and a storage medium of a switch assembly, which implement different driving modes aiming at different current ranges where working currents are located, protect a switch device and improve the working efficiency of the switch device. In a first aspect, an embodiment of the application provides a driving circuit of a switch assembly, the switch assembly comprises a MOS and an IGBT, the driving circuit comprises a microcontroller which is respectively connected to a grid electrode of the MOS and a grid electrode of the IGBT, wherein the microcontroller is configured to control the MOS to be conducted and control the IGBT to be turned off so that the working current passes through the MOS when the working current is smaller than a first current threshold value, control the MOS to be turned on and off firstly relative to the IGBT when the working current is larger than or equal to the first current threshold value and smaller than a second current threshold value so that the working current passes through the MOS and the IGBT which are connected in parallel, and control the IGBT to be turned on and off firstly relative to the MOS when the working current is larger than or equal to the second current threshold value so that the working current passes through the MOS and the IGBT which are connected in parallel. According to the foregoing embodiment of the first aspect of the present application, the first current threshold is set such that the on-voltage drop of the MOS is equal to the on-voltage drop of the IGBT when the operating current is equal to the first current threshold. According to any of the foregoing embodiments of the first aspect of the present application, the second current threshold is set to be the corresponding operating current when the MOS is subjected to the maximum switching stress. According to any one of the previous embodiments of the first aspect of the present application, the driving circuit further comprises a first resistor network connected between the microcontroller and the gate of the MOS, the first resistor network being used for adjusting the resistance value of a first driving resistor connected between the microcontroller and the gate of the MOS, and a second resistor network connected between the microcontroller and the gate of the IGBT, the second resistor network being used for adjusting the resistance value of a second driving resistor connected between the microcontroller and the gate of the IGBT. According to any of the foregoing embodiments of the first aspect of the present application, the microcontroller is configured to adjust a resistance value of the first driving resistor and a resistance value of the second driving resistor by the first resistor network and the second resistor network based on a magnitude of the operating current. In a second aspect, an embodiment of the application provides a driving method of a switch assembly, the switch assembly comprises a MOS and an IGBT, the driving method comprises the steps of controlling the MOS to be conducted and controlling the IGBT to be turned off when working current is in a first current range smaller than a first current threshold value so that the working current passes through the MOS, controlling the MOS to be turned on and off firstly and secondly relative to the IGBT when the working current is in a second current range larger than or equal to the first current threshold value and smaller than a second current threshold value so that the working current passes through the MOS and the IGBT which are connected in parallel, and controlling the IGBT to be turned on and then relative to the MOS when the working current is in a third current range larger than or equal to the second current threshold value so that the working current passes through the MOS and the IGBT which are connected in parallel. According to the foregoing embodiment of the sec