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CN-122001209-A - Plastic package silicon carbide power semiconductor module

CN122001209ACN 122001209 ACN122001209 ACN 122001209ACN-122001209-A

Abstract

The invention discloses a plastic package silicon carbide power semiconductor module, which relates to the technical field of electronic elements and comprises a substrate, a silicon carbide wafer, a plastic package body, power pins, signal pins, fault detection, fault communication and linkage protection modules. The silicon carbide wafer is arranged on the substrate, the pin sides are oppositely arranged, the plastic package body packages the internal devices, and each functional module is integrated on the substrate. The fault detection module captures various fault signals such as overcurrent and overvoltage in a full dimension and converts the fault signals into electric signals, the fault communication module establishes two-way communication with an external main controller through a special pin, stably transmits fault data and receives control instructions, the linkage protection module constructs closed-loop control, synchronously triggers hardware protection and fault feedback, and executes grading treatment. According to the invention, signal interference is avoided through structural optimization, communication reliability and module adaptability are improved, and safe and stable operation of a power conversion system is ensured, so that the method is suitable for high-frequency and high-voltage scenes such as electric automobiles and photovoltaic power generation.

Inventors

  • ZHANG LIANGJUN

Assignees

  • 爱微(江苏)电力电子有限公司

Dates

Publication Date
20260508
Application Date
20260128

Claims (10)

  1. 1. A plastic package silicon carbide power semiconductor module is characterized in that, The device comprises a substrate (1), a plurality of silicon carbide wafers (2), a plastic package body (3), a plurality of power pins (4), a plurality of signal pins (5), a fault detection module, a fault communication module and a linkage protection module; the silicon carbide wafers (2) are arranged on the substrate (1), and adjacent silicon carbide wafers (2) are isolated through an insulating tape; the power pins (4) and the signal pins (5) are electrically connected with the substrate (1) and the silicon carbide wafer (2) and are respectively and intensively arranged on different sides of the substrate (1); The plastic package body (3) encapsulates the substrate (1), the silicon carbide wafer (2) and each functional module; The fault detection module is integrated on the substrate (1) and is used for collecting physical signals related to faults in the operation process of the semiconductor module and converting the physical signals into processable electric signals; the fault communication module is electrically connected with the fault detection module, and a bidirectional communication link is established with an external main controller through a signal pin (5) and is used for transmitting fault electric signals and receiving control instructions; The linkage protection module is respectively and electrically connected with the fault detection module, the fault communication module and the silicon carbide wafer (2) and is used for triggering hardware protection actions when fault signals are detected and completing fault feedback and instruction execution in a matched mode.
  2. 2. The plastic packaged silicon carbide power semiconductor module of claim 1, The fault detection module comprises an overcurrent detection sub-module, an overvoltage detection sub-module, an overheat detection sub-module, a short circuit detection sub-module and a device failure detection sub-module, and the data of the sub-modules are communicated; The overcurrent detection submodule adopts a combined structure of a current divider sampling and high-speed comparator, is connected in series in a power loop and is used for inducing current change, identifying an overcurrent state by comparing a sampling signal with a preset reference signal and outputting a corresponding electric signal; the overvoltage detection submodule comprises a resistor voltage dividing circuit and an active clamping structure, and is used for collecting bus voltage through the resistor voltage dividing circuit, identifying overvoltage states, limiting voltage peaks and outputting overvoltage electric signals; the overheat detection sub-module is electrically connected with the thermistor on the substrate (1) and is used for acquiring temperature and temperature change rate signals by monitoring the characteristic change of the thermistor, identifying overheat state and generating corresponding electric signals; The short circuit detection submodule is integrated with a special detection circuit for silicon carbide and is used for collecting a conduction state signal of the silicon carbide wafer (2), identifying a short circuit fault by analyzing a signal mutation characteristic and outputting a fault electric signal; The device failure detection submodule is used for monitoring a grid voltage signal of the silicon carbide wafer (2), capturing abnormal fluctuation, parasitic oscillation or misleading characteristics and generating a device failure related electric signal.
  3. 3. The plastic packaged silicon carbide power semiconductor module of claim 1, wherein the fault communication module comprises a communication interface unit and a data processing unit; the communication interface unit occupies at least two special pins in the signal pins (5) as a transmitting end and a receiving end, supports various communication protocol adaptations, additionally occupies a pair of special pins when differential signal transmission is adopted, integrates an ESD protection structure inside the pins, and comprises a communication state indicating subunit; The data processing unit consists of a signal amplifying subunit, an analog-to-digital conversion subunit, a coding checking subunit, an instruction analyzing subunit and a data caching subunit; The signal amplifying subunit performs gain adjustment on the weak electric signal, the analog-to-digital conversion subunit converts the analog signal into the digital signal, the coding checking subunit guarantees data integrity through a preset algorithm, the instruction analyzing subunit is used for splitting and analyzing external control instructions, the data caching subunit is used for temporarily storing untransmitted fault data and unreported instructions according to priority, and the caching status monitoring and the priority transmission are supported.
  4. 4. The plastic packaged silicon carbide power semiconductor module of claim 3, The fault communication module supports a bidirectional interaction mechanism of state inquiry and fault feedback; The state inquiry function sends an inquiry frame containing a module identity mark through an external main controller, and the module acquires and sorts the running state data after receiving the inquiry frame, generates a response frame containing a working state, monitoring parameters and a fault mark and feeds back the response frame to the main controller; the fault feedback adopts a mixed mechanism of interrupt triggering and polling, and triggers a hardware interrupt signal aiming at short circuit and over-temperature faults, and general faults are periodically uploaded through a configurable polling period; The fault communication module adopts a preset simplified communication protocol, and the simplified communication protocol comprises a unified frame structure of a frame head, a module identity identifier, an operation state identifier, a fault type identifier, a control instruction identifier, a check code and a frame tail.
  5. 5. The plastic packaged silicon carbide power semiconductor module of claim 1, The linkage protection module comprises a protection execution unit, an instruction response unit and a state feedback unit; The protection execution unit is connected with the fault detection module in real time and is used for starting differential protection actions after receiving fault signals, turning off grid driving signals of the silicon carbide wafer (2) for short-circuit faults and cutting off a power loop, and limiting voltage for overvoltage faults by matching with an active clamping structure; The instruction response unit is used for receiving the control instruction analyzed by the fault communication module and executing power reduction, resetting or fault clearing operation; The state feedback unit is electrically connected with the fault communication module and is used for packaging the execution state of the hardware protection action, the completion progress of the control instruction and the real-time operation parameters of the module into a feedback data frame, and transmitting the feedback data frame to the external master controller through the fault communication module.
  6. 6. The plastic packaged silicon carbide power semiconductor module of claim 5, The state feedback unit comprises a time sequence synchronization subunit, wherein the time sequence synchronization subunit is used for receiving a synchronous clock signal issued by an external master controller, adjusting the transmission time sequence of a feedback data frame to keep consistent with the receiving time sequence of the master controller, and the synchronous clock signal protocol is compatible with the communication protocol of the fault communication module.
  7. 7. The plastic packaged silicon carbide power semiconductor module of claim 1, The substrate (1) is a double-sided copper-clad ceramic substrate; the power pins (4) and the signal pins (5) are of right-angle bending structures, and the bending directions are upward; The width of the power pin (4) is adapted to the transmission requirement of large current, and the width of the signal pin (5) is adapted to the transmission requirement of fault signals and control instructions.
  8. 8. The plastic packaged silicon carbide power semiconductor module of claim 1, All power pins (4) are arranged on the same side face of the substrate (1) in a concentrated mode, all signal pins (5) are arranged on the same side face of the substrate (1) in a concentrated mode, and the side face where the power pins (4) are located and the side face where the signal pins (5) are located are arranged oppositely.
  9. 9. The plastic packaged silicon carbide power semiconductor module of claim 2, The thermistor is a negative temperature coefficient thermistor, is fixed on the substrate (1) through a welding process, and is electrically connected with the overheat detection sub-module through a special signal line, and the special signal line wiring avoids a power line and an interference area.
  10. 10. The plastic packaged silicon carbide power semiconductor module of claim 1, The silicon carbide wafer (2) correspondingly forms a power tube, and the power tube is any one of a metal oxide semiconductor field effect transistor, an insulated gate bipolar transistor, a diode or a thyristor; the single power tube corresponds to at least one silicon carbide wafer (2), and a plurality of silicon carbide wafers (2) can be connected in series or in parallel; the fault detection module is used for configuring corresponding fault monitoring logic aiming at different types of power tubes, the fault communication module is used for adapting power tube fault characteristic configuration data coding and transmission logic, and the linkage protection module is used for configuring corresponding protection action logic aiming at different types of power tubes.

Description

Plastic package silicon carbide power semiconductor module Technical Field The invention relates to the technical field of electronic elements, in particular to a plastic package silicon carbide power semiconductor module. Background The power semiconductor module is a core component of the power electronic system and plays a key role in power conversion and transmission. With the development of silicon carbide material technology, silicon carbide power devices gradually replace traditional silicon-based devices by virtue of the advantages of high temperature resistance, high switching speed, low energy consumption and the like, and are widely applied to various high-power and high-frequency scenes. However, the existing plastic-packaged silicon carbide power semiconductor module still has a plurality of technical defects: firstly, the existing module is built by adopting discrete silicon carbide devices, so that the occupied PCB space is large, the wiring path is long, the system integration level is reduced, the electromagnetic interference (EMI) risk is increased, and meanwhile, the PCB assembly process efficiency is reduced; Secondly, the discrete device has higher thermal resistance, directly influences the reliability and the output current bearing capacity of the module, and limits the improvement of the power density of the system; Third, the fault handling mechanism of the existing module is single, the passive shutdown of faults such as overcurrent and overvoltage is realized only by depending on a hardware protection circuit, and the effective fault information acquisition and communication feedback functions are lacked, so that key information such as fault types and fault positions cannot be actively transmitted to an external main controller, and a manager is difficult to quickly locate the fault source. Accordingly, the present invention is directed to a plastic encapsulated silicon carbide power semiconductor module that addresses one or more of the problems set forth above. Disclosure of Invention (One) solving the technical problems The invention provides a plastic package silicon carbide power semiconductor module for solving the problems in the background art. (II) technical scheme In order to achieve the above object, the present invention is realized by the following technical scheme, which is a plastic package silicon carbide power semiconductor module, comprising a substrate, a plurality of silicon carbide wafers, a plastic package body, a plurality of power pins, a plurality of signal pins, a fault detection module, a fault communication module and a linkage protection module; the silicon carbide wafers are arranged on the substrate, and adjacent silicon carbide wafers are isolated by an insulating tape; The power pins and the signal pins are electrically connected with the substrate and the silicon carbide wafer and are respectively and intensively arranged on different sides of the substrate; the plastic package body encapsulates the substrate, the silicon carbide wafer and each functional module; The fault detection module is integrated on the substrate and is used for collecting physical signals related to faults in the operation process of the semiconductor module and converting the physical signals into processable electric signals; The fault communication module is electrically connected with the fault detection module, and establishes a bidirectional communication link with an external main controller through a signal pin, and is used for transmitting fault electric signals and receiving control instructions; The linkage protection module is respectively and electrically connected with the fault detection module, the fault communication module and the silicon carbide wafer, and is used for triggering hardware protection actions when fault signals are detected and completing fault feedback and instruction execution in a matched mode. Preferably, the fault detection module comprises an overcurrent detection sub-module, an overvoltage detection sub-module, an overheat detection sub-module, a short circuit detection sub-module and a device failure detection sub-module, and all the sub-modules are communicated with each other in data; The overcurrent detection submodule adopts a combined structure of a current divider sampling and high-speed comparator, is connected in series in a power loop and is used for inducing current change, identifying an overcurrent state by comparing a sampling signal with a preset reference signal and outputting a corresponding electric signal; the overvoltage detection submodule comprises a resistor voltage dividing circuit and an active clamping structure, and is used for collecting bus voltage through the resistor voltage dividing circuit, identifying overvoltage states, limiting voltage peaks and outputting overvoltage electric signals; The overheat detection sub-module is electrically connected with the thermistor on the substrate and is used for