CN-122001311-A - 6-18GHz broadband power amplifier of GaAs technology

CN122001311ACN 122001311 ACN122001311 ACN 122001311ACN-122001311-A

Abstract

The invention discloses a 6-18GHz broadband power amplifier for a GaAs process. The power amplifier adopts a three-stage cascade structure, wherein an input stage circuit model adopts an input matching circuit to construct an S11 pole and realize broadband matching, a driving stage circuit model adopts an L-shaped interstage matching circuit to realize optimal impedance matching with an output stage, and an output stage circuit model adopts a broadband matching structure and a microstrip line bias network to construct an S22 pole. The invention also provides a corresponding control method, and the model which can accurately predict the performance of the amplifier is finally packaged by constructing each level of model based on the test data blocks and performing simulation optimization after cascade connection. The scheme solves the problem that the existing broadband power amplifier model is difficult to fit multiple index precision simultaneously, the established model is well matched with measured data in the aspects of small signal S parameter, output power, efficiency, harmonic characteristic and the like, the portability is high, and the method is suitable for design and verification of a large-scale integrated circuit system.

Inventors

CUI JINGYU
ZHAO JUNSHI
YANG LIJUN
LIU JUN
SU GUODONG
HONG LI
QI XIAOLIN
YANG NING
WANG ZHIQIANG

Assignees

中国电子科技集团公司信息科学研究院
杭州电子科技大学

Dates

Publication Date: 20260508
Application Date: 20251205

Claims (10)

1. The 6-18GHz broadband power amplifier for the GaAs process is characterized by comprising an input stage circuit model, a driving stage circuit model and an output stage circuit model, wherein the input stage circuit model, the driving stage circuit model and the output stage circuit model are sequentially cascaded, and the input stage circuit model, the driving stage circuit model and the output stage circuit model are sequentially connected in series, wherein: The input stage circuit model is used for receiving an input signal and amplifying low-noise voltage; The driving stage circuit model is used for converting a small signal output by the input stage into a current signal for driving the output stage; the output stage circuit model is used for outputting a power signal and directly driving a load.
2. The 6-18GHz broadband power amplifier for the GaAs process according to claim 1, wherein the input stage circuit model comprises a stability network and an input matching circuit, the input matching circuit comprises a microstrip line, a capacitor, an inductor and a resistor, each pole position of test data S11 is used for constructing, and the real part of input impedance is increased through series resistance to realize broadband impedance matching and gain adjustment, the test data S11 is 6-18GHz input reflection coefficient data which are actually measured, the pole positions are frequency points arranged in the matching circuit and are used for broadband impedance matching, and the resonant frequency is changed by adjusting the length and capacitance of the microstrip line.
3. The 6-18GHz broadband power amplifier for the GaAs process according to claim 1, wherein the driver stage circuit model comprises a stability network and an inter-stage matching circuit, and the inter-stage matching circuit adopts an L-type matching structure for realizing the matching of the optimal load impedance of the driver stage transistor and the optimal source impedance of the output stage transistor.
4. The 6-18GHz broadband power amplifier for the GaAs process according to claim 1, wherein the output stage circuit model comprises a stability network, an output matching circuit and a bias network, the output matching circuit adopts a broadband matching structure and is composed of microstrip lines and capacitors and is used for constructing pole positions S22, the bias network uses the microstrip lines to replace choke inductors, the pole positions S22 are frequency points arranged in the matching circuit and are used for broadband impedance matching, and resonant frequency can be changed by adjusting the lengths of the microstrip lines and capacitance values of the capacitors.
5. The GaAs process 6-18GHz broadband power amplifier of claim 1, wherein the inter-stage matching between the input stage circuit model and the driver stage circuit model employs conjugate matching.
6. The GaAs process 6-18GHz broadband power amplifier of claim 1, wherein the amplifier bias condition is gate voltage vg= -0.8V, drain voltage Vd = 5V.
7. A control method of a 6-18GHz broadband power amplifier based on the GaAs process of any one of claims 2 to 6, comprising the steps of: Step S1, respectively constructing an input stage circuit model, a driving stage circuit model and an output stage circuit model based on test data S11; step S2, cascading all stages of circuit models according to the sequence of an input stage, a driving stage and an output stage to form an integral power amplifier circuit model; S3, simulating the whole circuit model through simulation software to obtain S parameters, output power and power additional efficiency performance indexes; S4, comparing simulation results with test data, and optimizing parameters of circuit models of all levels to enable errors to meet requirements; and S5, packaging the optimized complete circuit netlist and element parameters into an Symbol element model or a behavior level model which can be called by an EDA tool, wherein the packaging model can be used for predicting the performance of the amplifier under different frequency, bias or input power conditions in system level simulation.
8. The control method according to claim 7, wherein in step S1, the transistor size is selected by load pull test and the stability network and the matching circuit are designed when the output stage circuit model is constructed, and in step S2, the input stage and the driving stage are conjugate-matched and the driving stage and the output stage are L-shaped matched when cascade-connected.
9. The control method according to claim 7, wherein in step S4, the optimization process uses a compromise strategy while fitting a small signal S parameter, an output power, a power added efficiency, and a harmonic power multiple index.
10. An integrated circuit system comprising the 6-18GHz broadband power amplifier of the GaAs process of any one of claims 1-6 and the 6-18GHz broadband power amplifier of the GaAs process controlled by the control method of any one of claims 7-9.

Description

6-18GHz broadband power amplifier of GaAs technology Technical Field The invention relates to a power amplifier, in particular to a 6-18GHz broadband power amplifier for a GaAs process, belonging to the field of radio frequency integrated microsystems. Background With the continuous improvement of the integration level of integrated circuit systems, the models of the active circuits play an increasingly significant role in circuit simulation analysis. The power amplifier is used as a core part in a wireless communication system, the performance of the power amplifier can directly influence the performance of the whole link system, and the demand for the broadband monolithic microwave integrated circuit power amplifier is increasing in the aspects of electronic warfare, radar systems and the like. With the increasing scale of integrated circuits and the increasing integration, most of the existing circuit simulation programs cannot meet the requirements of analysis and design of large networks or systems containing integrated circuits under the limitation of memory space and calculation time. Therefore, how to construct an accurate and efficient wideband power amplifier model is of great significance to integrated circuit design and verification. Circuit models, which are one of the key technologies in integrated circuit design, provide intuitive and simplified models for complex electronic components or circuit subsystems that are generally based on the function and behavior of the circuit, and that enable accurate predictions of the state of the circuit or system under different operating conditions, enabling engineers to quickly design and verify circuit functions without having to deal with excessive detail. Meanwhile, in engineering practical application, the model only displays an external simplified model, but cannot observe an internal specific circuit, so that the model has reliable safety and confidentiality. The model can be used for analyzing the monolithic integrated circuit, and has important significance for analyzing the whole link system. By establishing a model of the chip circuit and then establishing a broadband power amplifier, the circuit can be simplified, the running efficiency of a computer can be improved, and a priori condition is provided for the research of a large-scale complex network. The method has a significant role in the field of military and civil electronic informatization, and provides a referent and development-oriented direction for the next-generation chip development process. In the macroscopic application of the circuit model, different reference circuits can be used for replacing the circuit without changing the functions of components, so that the circuit cost is saved, and the circuit model is built on the microscopic level of the circuit model, so that the circuit model has good portability and is convenient to be combined with different circuits. Since 1970 s, model research has been paid attention to students at home and abroad, and great development has been carried out, and common model construction methods can be divided into a construction method and a simplification method, and in practical application, comprehensive application of the construction method and the simplification method is mostly adopted, but it is difficult to simultaneously satisfy multiple index precision of a complex integrated circuit. The power amplifier model is characterized in that performance indexes are complex, besides static conditions and power consumption, S parameters and linear response under small signal conditions and output power, efficiency and nonlinear response under large signal conditions are required to be met, and factors such as bias conditions, parasitic networks, the size of input signals, waveforms, frequencies and input/output impedance can influence indexes and accuracy of the macro power amplifier model, the existing power amplifier model only models power curves, fitting of indexes such as efficiency and S parameters and prediction of different working conditions such as grid voltage and leakage voltage are difficult to meet at the same time. Disclosure of Invention In order to solve the problem that most EDA tools are limited by hardware performance and calculation time and are difficult to analyze and design a large-scale integrated circuit working at high frequency, the invention designs a 6-18GHz broadband power amplifier, which has the technical scheme that the 6-18GHz broadband power amplifier comprises an input stage circuit model, a drive stage circuit model and an output stage circuit model, which are sequentially cascaded, wherein: The input stage circuit model is used for receiving an input signal and amplifying low-noise voltage; The driving stage circuit model is used for converting a small signal output by the input stage into a current signal for driving the output stage; the output stage circuit model is used for outputting a power signal