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CN-122001323-A - Resonator, resonance system, and electronic apparatus

CN122001323ACN 122001323 ACN122001323 ACN 122001323ACN-122001323-A

Abstract

Provided are a resonator, a resonant system and electronic equipment, and relates to the field of micro-electromechanical technology. The resonator comprises a first resonance part, a second resonance part and a coupling part, wherein the first resonance part is connected with the second resonance part through the coupling part, the second resonance part can drive the first resonance part to generate resonance, the material of the resonance layer is made of monocrystalline materials or doped monocrystalline materials, the first resonance part has a high Q value and low full-temperature-range frequency temperature drift, the first resonance part comprises a resonance layer, a first piezoelectric layer and a first electrode which are arranged in a stacked mode, the first piezoelectric layer is arranged on the resonance layer, mechanical energy generated by resonance of the resonance layer is converted into electric energy, the first resonance part has excellent electromechanical conversion efficiency, and Rm of the whole resonator is effectively reduced.

Inventors

  • HUANG LINHAI
  • CHEN WEN
  • WANG CHENXI

Assignees

  • 华为技术有限公司

Dates

Publication Date
20260508
Application Date
20241105

Claims (16)

  1. 1. The resonator is characterized by comprising a first resonance part, a second resonance part and a coupling part, wherein the first resonance part is connected with the second resonance part through the coupling part, and the second resonance part is used for driving the first resonance part to resonate; The first resonance part comprises a resonance layer, a first piezoelectric layer and a first electrode which are arranged in a stacked mode, wherein the resonance layer is made of monocrystalline materials or doped monocrystalline materials.
  2. 2. The resonator according to claim 1, characterized in that the second resonance section comprises a second electrode, a second piezoelectric layer and a third electrode which are stacked; The second electrode and the resonance layer are in the same layer and are connected through the coupling part, the second piezoelectric layer and the first piezoelectric layer are in the same layer and are connected, and the first electrode and the third electrode are in the same layer and are connected.
  3. 3. The resonator according to claim 1 or 2, characterized in that the resonator comprises at least two first resonance parts and at least two coupling parts corresponding to the at least two first resonance parts one by one, and the second resonance part is connected with the first resonance parts through the coupling parts corresponding to the first resonance parts.
  4. 4. A resonator according to any of claims 1 to 3, wherein the area of the surface of the first piezoelectric layer adjacent to the resonant layer is S1, the area of the surface of the resonant layer adjacent to the first piezoelectric layer is S2, and the ratio of S1 to S2 is (10-80): 100.
  5. 5. The resonator according to any of claims 1 to 4, characterized in that a surface of the resonance layer close to the first piezoelectric layer is a quadrangle, the first piezoelectric layer is a cross-shaped wiring distributed along a diagonal direction of the quadrangle, or the first piezoelectric layer is a ring-shaped wiring distributed along an edge position of the quadrangle.
  6. 6. The resonator according to claim 5, wherein the wiring has a line width W1, the sides of the quadrangle have a length L1, and the ratio of W1 to L1 is (1-3): 10.
  7. 7. The resonator according to any of claims 1 to 4, characterized in that the surface of the resonance layer adjacent to the first piezoelectric layer is circular, the first piezoelectric layer is a cross-shaped wiring distributed along the diameter direction of the circular shape, or the first piezoelectric layer is a ring-shaped wiring distributed along the circumferential position of the circular shape.
  8. 8. The resonator according to claim 7, wherein the wiring has a line width of W2, the diameter of the circle is L2, and the ratio of W2 to L2 is (1-3): 10.
  9. 9. The resonator according to any of claims 1-4, characterized in that the surface of the resonance layer adjacent to the first piezoelectric layer is a ring, and the first piezoelectric layer is a ring-shaped wiring distributed along the middle position of the resonance layer.
  10. 10. The resonator according to claim 2, characterized in that the first resonance section further comprises a first insulating layer and a fourth electrode arranged in a stack, the first insulating layer being arranged close to the resonance layer, the fourth electrode being arranged close to the first piezoelectric layer; The second resonance part further comprises a second insulating layer and a fifth electrode which are arranged in a stacked mode, the second insulating layer is arranged close to the second electrode, and the fifth electrode is arranged close to the second piezoelectric layer; The first insulating layer and the second insulating layer are connected in the same layer, and the fourth electrode and the fifth electrode are connected in the same layer.
  11. 11. The resonator of claim 2, comprising a first electrode port and a second electrode port, the first electrode port being connected to the first electrode, the second electrode port being connected to the third electrode.
  12. 12. The resonator according to claim 2 or 10, characterized in that the material of the second electrode is monocrystalline or doped monocrystalline.
  13. 13. A resonant system comprising at least two resonators as claimed in any one of claims 1 to 12, the second resonant portions of at least two of the resonators being connected by a first coupling rod, a pair of masses being provided between adjacent ones of the resonators on the first coupling rod.
  14. 14. The resonant system of claim 13, further comprising a second coupling bar through which the resonant layers of adjacent resonators are connected.
  15. 15. A resonant system, characterized in that the resonant system comprises at least two resonators as claimed in claim 10, wherein second resonant parts of the at least two resonators are connected through a first coupling rod, two ends of the first coupling rod are provided with anchoring parts, and a third electrode port, a third piezoelectric layer and a fourth electrode port are laminated on the anchoring parts; The third electrode port is connected with a first electrode in one resonator, the fourth electrode port is connected with a second electrode in the other resonator, and the third electrode port and the fourth electrode port are connected through a via hole on the third piezoelectric layer.
  16. 16. An electronic device comprising the resonant system of claim 13 or 14 or the resonant system of claim 15.

Description

Resonator, resonance system, and electronic apparatus Technical Field Embodiments of the present application relate to the field of microelectromechanical systems, and more particularly to resonators, resonant systems, and electronic devices. Background The resonator is a device for generating a resonance frequency, and is widely used for electronic components such as an oscillator and a filter. With the continuous development of communication technology, higher requirements are put on the performance of resonators. The main performance parameters of the resonator include Quality factor (Q), dynamic impedance Rm, and full Wen Pinlv temperature drift. The Q value and Rm value can influence the phase noise performance and the like of the resonator, and the full Wen Pinlv temperature drift can influence the frequency stability, the reliability and the like of the resonator. However, it is difficult to obtain a resonator with a high Q value, a low Rm and a low full temperature range frequency temperature drift, resulting in poor overall performance of the resonator. Disclosure of Invention The embodiment of the application provides a resonator, a resonant system and electronic equipment, wherein the resonator has high Q value, low Rm and low full temperature range frequency temperature drift, and has excellent comprehensive performance. In a first aspect, a resonator is provided. The resonator comprises a first resonance part, a second resonance part and a coupling part, wherein the first resonance part is connected with the second resonance part through the coupling part, the second resonance part is used for driving the first resonance part to resonate, the first resonance part comprises a resonance layer, a first piezoelectric layer and a first electrode which are arranged in a stacked mode, the first piezoelectric layer can be arranged on part of the surface of the resonance layer, the resonance layer is made of monocrystalline materials or doped monocrystalline materials, for example, the monocrystalline materials can be monocrystalline silicon, and the doped monocrystalline materials can be monocrystalline silicon with the doping concentration being greater than or equal to 19 times of 10. The first resonant part comprises a resonant layer, a first piezoelectric layer and a first electrode which are arranged in a laminated mode, when the resonator works, the first piezoelectric layer can be driven to vibrate by the alternating voltage which can cause the first piezoelectric layer to vibrate, the frequency of the alternating voltage is close to the natural frequency of the resonator, the resonator can be ensured to work in a resonant state, in addition, the second resonant part can also drive the first resonant part to resonate, and the first piezoelectric layer is arranged on the resonant layer, so that the mechanical energy generated by the resonance of the resonant layer can be converted into electric energy, the first resonant part has better electromechanical conversion efficiency, and Rm of the whole resonator can be effectively reduced. In addition, because the resonator provided by the embodiment of the application has low Rm, the mass ratio of the first resonance part in the resonator can be properly increased, and the resonator with the large mass ratio of the first resonance part has higher Q value and lower full-temperature-domain frequency temperature drift. Therefore, the resonator provided by the embodiment of the application can further optimize the Q value and the full-temperature-range frequency temperature drift of the resonator under the condition of ensuring that Rm is lower, and the resonator which has the advantages of high Q value, low Rm, low full-temperature-range frequency temperature drift, better phase noise performance, frequency stability, reliability and the like can be obtained, and the comprehensive performance of the resonator is better. In one possible implementation manner, the second resonance part comprises a second electrode, a second piezoelectric layer and a third electrode which are arranged in a stacked manner, wherein the second electrode is in the same layer as the resonance layer and is connected with the first piezoelectric layer through the coupling part, the second piezoelectric layer is in the same layer as the first piezoelectric layer and is connected with the first electrode, and the first electrode is in the same layer as the third electrode and is connected with the third electrode. In some examples, the second piezoelectric layer and the first piezoelectric layer belong to an integrally formed piezoelectric layer. For example, the integral formation of the second piezoelectric layer and the first piezoelectric layer is understood to mean that the first piezoelectric layer and the second piezoelectric layer are formed on the same layer of piezoelectric material. In some examples, the first electrode and the third electrode belong to an integrally form