CN-122001328-A - Low-power consumption MEMS constant temperature crystal oscillator based on diamond heat conduction layer

Abstract

The application discloses a low-power-consumption MEMS constant-temperature crystal oscillator based on a diamond heat conduction layer, and relates to the crossing field of a micro-electromechanical system and a frequency control device. The MEMS resonator comprises a resonator chip and a diamond heat conduction layer, wherein the resonator chip and the diamond heat conduction layer form metallurgical bonding through a wafer-level bonding process, the area of the diamond heat conduction layer is matched with the heating area of the resonator chip, and the heating element is configured in an area close to the diamond heat conduction layer and is used for outputting heat required by heating of the resonator chip. The method is used for solving the technical bottlenecks of overlong preheating time, high power consumption, limited frequency stability caused by temperature gradient and the like of the conventional constant-temperature crystal oscillator based on the MEMS resonator.

Inventors

• LIU SHA
• ZHANG SHENGKANG
• XU HUIHUI
• CAO YUE
• WANG CHAO
• WANG JIANBING
• LI YING
• LI BOHONG
• WU HUANHUAN

Assignees

• 北京无线电计量测试研究所

Dates

Publication Date

20260508

Application Date

20251226

Claims (10)

1. 1. The low-power consumption MEMS constant temperature crystal oscillator based on the diamond heat conduction layer is characterized by comprising an MEMS resonator containing the diamond heat conduction layer and a heating element, wherein: The MEMS resonator with the diamond heat conducting layer comprises a resonator chip and the diamond heat conducting layer, wherein the resonator chip and the diamond heat conducting layer form metallurgical bonding through a wafer-level bonding process, and the area of the diamond heat conducting layer is matched with the heating area of the resonator chip; the heating element is arranged in a region close to the diamond heat conduction layer and is used for outputting heat required by heating of the resonator chip.
2. 2. The oven controlled crystal oscillator of claim 1, wherein a heating area of the heating element matches an area of the diamond thermally conductive layer.
3. 3. The constant temperature crystal oscillator of claim 1, wherein the diamond thermally conductive layer is of the single crystal diamond film type prepared by a chemical vapor deposition process.
4. 4. The oven controlled crystal oscillator of claim 1, wherein the heating element is heated using an integrated power transistor.
5. 5. The constant temperature crystal oscillator of claim 1, further comprising a thermistor and a temperature control module, wherein: the sensing end of the thermistor is connected with the diamond heat conduction layer and is used for collecting the real-time temperature of the resonator chip and feeding the real-time temperature back to the temperature control module; the temperature control module is used for dynamically comparing the real-time temperature with the preset temperature, calculating the temperature difference and the change rate, outputting a driving signal to dynamically regulate and control the power of the heating element, and realizing self-adaptive regulation of rapid temperature rise and accurate heat preservation.
6. 6. The constant temperature crystal oscillator of claim 5, wherein the sensing end of the thermistor is connected to the diamond thermally conductive layer by a high thermal conductivity adhesive.
7. 7. The thermostatic crystal oscillator of claim 5 further comprising a thermostatic bath, wherein: the MEMS resonator, the heating element, the thermistor and the temperature control module containing the diamond heat conduction layer are compactly placed in the constant temperature tank.
8. 8. The constant temperature crystal oscillator according to claim 7, wherein the constant temperature tank adopts a lightweight composite heat insulation cavity structure.
9. 9. The constant temperature crystal oscillator according to claim 7, wherein the cavity wall of the constant temperature tank adopts double-layer collaborative design, the inner layer is used for highly-effectively blocking heat conduction, and the outer layer is used for achieving both structural compactness and supporting reliability.
10. 10. The constant temperature crystal oscillator according to claim 1, wherein the core resonance region of the MEMS resonator containing the diamond heat conductive layer is prepared by a refinement process for securing a stable characteristic of an operating frequency.

Description

Low-power consumption MEMS constant temperature crystal oscillator based on diamond heat conduction layer Technical Field The application relates to the technical field of crossing of micro-electromechanical systems (MEMS) and frequency control devices, in particular to a low-power-consumption MEMS constant-temperature crystal oscillator based on a diamond heat conducting layer. Background The constant temperature crystal oscillator (OCXO) is a high-precision frequency source which is used for counteracting the influence of environmental temperature fluctuation on resonant frequency by placing a resonator in a constant temperature environment, and is a core device in the fields of communication, test measurement, aerospace and the like. Along with the development of miniaturization, portability and low power consumption of electronic equipment, the constant-temperature crystal oscillator (MEMSOCXO) based on the MEMS resonator gradually replaces the traditional quartz constant-temperature crystal oscillator due to the advantages of small volume, light weight, batch manufacturing and the like, but the following key technical bottlenecks still exist in the prior MEMSOCXO and quartz OCXO: Firstly, the preheating time is too long to meet the instant starting requirement. The traditional constant temperature crystal oscillator is characterized in that the resonator and the heating element are in heat transfer by relying on low heat conduction materials such as silicon, ceramic and the like, the heat resistance is obviously high, and the heat is difficult to quickly permeate into the core resonance area of the resonator. In the prior art, the preheating time of the MEMS constant-temperature crystal oscillator is generally longer, and the preheating time of the quartz-based constant-temperature crystal oscillator is longer, so that the scenes of instant response requirements of a 5G communication base station, portable emergency test equipment and the like on the starting speed are difficult to meet. And secondly, the power consumption is high. In order to overcome high thermal resistance and realize rapid temperature rise, the heater needs to output higher peak power, and in the steady-state constant-temperature stage, the heater is limited by larger heat loss and hysteresis of temperature compensation response, and certain maintenance power needs to be continuously output. For portable equipment (such as a handheld spectrum analyzer and a field monitoring terminal) powered by a battery, the power consumption level can lead to the substantial shortening of the endurance time of the equipment, and severely restrict the expansion of the practical application scene of the equipment. Thirdly, the temperature gradient results in limited frequency stability. In the traditional structure, a remarkable temperature gradient (up to 5-10 ℃ per mm) exists in the resonator chip, thermal stress deformation is caused, and the short-term stability of the resonant frequency is difficult to meet the requirement of high-end communication equipment on frequency precision. In the prior art, in order to improve the heat conduction efficiency, researchers try to use a copper film, an aluminum nitride (AlN) film and the like as heat conduction media (such as the structure disclosed in CN 108736152A), but the heat conduction performance of the materials is still limited and the heat resistance cannot be fundamentally reduced, and in addition, the scheme shortens the preheating time (such as CN 110247879B) by increasing the heating power, but the power consumption problem is further aggravated by the method. Disclosure of Invention The application aims to provide a low-power-consumption MEMS constant-temperature crystal oscillator based on a diamond heat conduction layer, which solves the key technical bottleneck existing in the conventional constant-temperature crystal oscillator based on an MEMS resonator. In order to achieve the above purpose, the application adopts the following technical scheme: the application provides a low-power consumption MEMS constant temperature crystal oscillator based on a diamond heat conduction layer, which comprises an MEMS resonator containing the diamond heat conduction layer and a heating element, wherein: The MEMS resonator with the diamond heat conducting layer comprises a resonator chip and the diamond heat conducting layer, wherein the resonator chip and the diamond heat conducting layer form metallurgical bonding through a wafer-level bonding process, and the area of the diamond heat conducting layer is matched with the heating area of the resonator chip; the heating element is arranged in a region close to the diamond heat conduction layer and is used for outputting heat required by heating of the resonator chip. Optionally, the heating area of the heating element is matched with the area of the diamond heat conducting layer. Optionally, the diamond heat conducting layer is prepared by adopting a